1228808 為了解決前述缺點，業已有如第14A圖、第14B圖所 示，於引線架1下面貼著膜9使其一體化後，進行樹脂密封 之方法。然而，習知樹脂密封方法中，僅第14A圖之以陰影 線所不之領域9a可以上下模夾緊。因此，第14B圖之波狀線 5所示之膜9之領域9b，即，不僅位於最外側之引線4之下面 内側緣部，而且晶粒座2之下面全面亦沒有完全密著於膜 9。其結果為，注入之樹脂8於引線4下面擴展且被覆，或者 於晶粒座2下面，樹脂保持擴展之狀態而固化，而使最終製 品下面有產生凹凸不平之虞。因此，業已有另外之電子零 10件樹脂密封方法(例如，參照專利文獻1) 專利文獻1 國際公開第00/66340號文件 即，將業以重疊於黏著膜之引線架，以具有平垣面之 下夾體與具有格子狀之按壓突部之上夹體夹緊並貼著—體 I5 化後，進行樹脂密封之方法。 發明欲解決之課題 然而，前述膜貼著方法中，引線架、上下夹體、❹ 厚度尺寸、面精度上均具有不均一性。因此，於其業已兔 合之情況下，因累積誤差，上下夾體所負荷之按壓負載不 20均一。其結果為，無法將膜均_地貼著於引線架下面，於 樹脂密封時無法完全防止樹脂侵入膜與引線架之縫隙。、 【明内3 發明概要 本發明鑑於前述缺點，係以提供一種膜貼著裝置及膜 1228808 貼著方法為目的，該膜貼著裝置係可完全地防止樹脂密封 時之樹脂之擴展且可使膜均一地貼著於半導體裝置下面並 一體化者。 用以解決課題之手段 5 本發明之膜貼著裝置，為了達成前述目的，係將膜可 自由剝離地貼著於業已利用導線連接搭載於晶粒座之半導 體晶片與引線之基板下面者，且，該膜貼著裝置係由上夾 體與下夾體構成，該上夾體係於下面具有不干擾前述半導 體晶片及導線等之凹處者，而前述下夾體則係於載置前述 10 膜之載置面設置有通氣孔者，且係利用前述下夾體與前述 上夾體夾緊前述基板之外周緣部，並且可將來自前述通氣 孔之氣體回流由負壓切換至正壓。 此外，前述基板不僅包含由金屬單體構成之引線架， 亦可為由樹脂材構成之樹脂製基板，例如，高精細有機封 15 裝基板。 依據本發明，藉將來自前述下夾體中之通氣孔之氣體 回流由負壓切換至正壓，可於不會使前述半導體晶片及導 線等損傷之情況下，以氣壓將前述膜按壓於基板。因此， 前述膜係均一地密著於基板，並相互地貼著一體化。其結 20 果為，即使以樹脂密封，樹脂亦不會擴展至該基板下面， 可得到良好之半導體裝置。 亦可設置連通前述上夾體之凹處之通風孔。依據本實 施形態，氣體由前述通風孔排出，因此，即使使前述通氣 孔之氣體回流由負壓切換至正壓，前述膜與基板之間亦不 1228808 會殘留氣體，可使膜與基板更加確實地貼著一體化。 前述上夾體之凹處内，亦可突出設置有限制基板過度 浮起之位置限制用突部。 依據本實施形態，藉防止前述基板過度浮起，可防止 5半導體晶片或基板破損。 前述上夾體之凹處内，亦可突出設置有多數區隔晶粒 座，且與下夾體一起夾緊前述基板之夾緊用突部。 依據本實施形態，前述夾緊用突部係使基板之浮起情 况減小’使前述膜與基板更加確實地黏著。 10 位於前述晶粒座下方側之通氣孔，與位於晶粒座下方 侧以外之通氣孔可不連續。 依據本實施形態，前述位於晶粒座下方側之通氣孔與 位於晶粒座下方側以外之通氣孔可於不同時點使氣體回流 由負壓切換至正壓。 15 載置膜之下夾體之載置面亦可形成有連接多數通氣 孔，且位於引線下方側之通氣溝。 依據本實施形態，藉使前述通氣孔之氣體回流由負壓 切換至正壓，可使位於形成有通氣溝之部分之膜確實地密 著黏貼於引線架。因此，於樹脂密封時可防止樹脂朝弓丨線 20 架裡面側擴展，可確實地防止接觸不良。 尤其，於載置前述膜之下夾體之載置面，亦可形成有 連接多數通氣溝，且位於切斷前之引線之自由端下方側之 通氣溝。 依據本實施形態’藉使前述通氣孔之氣體回流由負壓 切換至正壓，可使前述膜確實地㈣缝著於辑前之引 線之自由端緣部。因此，於樹脂密封時可防止樹脂朝引線 理面側擴展，可更加確實地防止接觸不良。 〜前述膜可於至少-端緣部延伸出具有由基板外周緣部 突出之形狀之剝離用舌片。 依據本實施形態，樹脂密封後之膜剝離作業更簡單、 方便，且可輕易地自動化。 本發明之膜貼著方法，係將膜可自由剝離地貼著於業 已利用導線連接搭載於晶粒座之半導體晶片與引線之基板 下面者’且其係由將前述職置於下夹體之形成有通氣孔 之载置面’紐將前述基板重s於前述膜上，並利用於下 面具有不干擾半導體晶片及導線等之凹處之上夾體盘下失 體失緊前述基板之周緣部後，使氣體由前述通氣孔吐出之 步驟槿成。 、、可乃沄，係將膜可自由剥_ 貼著於業已利料線連接搭晶粒座之铸體晶Μ 線之基板下面者，且其係由於前述職置於下夾體d 有通氣孔之載置面，以透過前述通氣孔吸引、固持前亂 並將前述基板重叠於前述膜上，騎利用於下面 擾半導體晶片及導線等之凹處之上夾體與下夾私緊負 基板之周緣部後，使來自前述通氣孔之氣體回流 換至正壓之步驟構成。 、_ 前述發明皆以由前述通氣孔吐出之氣體按壓膜， 此，可前述使膜與基板均—地密著並貼著—體化。㈣ 1228808 即使以樹脂密封時，樹脂亦不會擴展至基板下面，得到良 好之半導體裝置。 又，依據本發明之實施形態，亦可於將前述位於晶粒 座下方側之通氣孔由負壓切換至正壓後，使位於晶粒座下 5 方側以外之通氣孔由負壓切換至正壓。 依據本實施形態，前述膜隙先貼著於晶粒座下面後， 再貼著於位於晶粒座周圍之引線等。因此，前述基板與膜 之間氣體不易殘留，可使兩者沒有縫隙地密著而貼著一體 化。 10 且，亦可將前述業已貼著之基板與膜載置於加熱體上 面’並加熱前述加熱體使前述基板與前述膜更加密著。 依據本實施形態，具有可使前述基板與膜更加牢固地 貼著一體化之效果。 15 發明之實施形態 將本發明之實施形態依照第1圖至第11圖進行說明。如 第1圖至第6圖所示，針對業已將第丄實施形態之膜貼著裝置 10組合於樹脂密封裝置40之情況進行說明。 第1圖所示之前述膜貼著裝置1〇,係如第2圖至第5圖所 20示，具有由下夾體21與上夾體25構成之膜貼著單元20。且， 前述膜貼著單元20，係如第1圖所示，係使由獏供給單元工工 供給之膜30 ’與由輸入匣緩衝單元η供給之引線架31貼著 一體化者。 前述下夾體21，如第2圖所示，係藉於表面以預定之間 10 1228808 距配置通氣孔22、23，而可吸引、固持膜3〇。尤其，如第 6B圖所示，前述通氣孔22、23中，中央通氣孔切系配置於 晶粒座32之下面中央，且前述隅部通氣孔23係配置於以前 述晶粒座33為中心之對角線上之隅部。然而，中央通氣孔 5 22與隅料氣孔23並沒有互相連通，氣體之吸引、吐出控 制係不同之系統。 另外’如第3圖所示，前述上夾體25係透過滑動軸26 可上下移動，而可定位於前述下夾體21上面。且，前述上 炎體25下面係設置有不干擾基板31之半導體晶片％及導線 1〇 35等之凹處25a。且，前述上炎體25之下面緣部係設置有卡 止、抓持引線架31之兩側緣部之抓持爪27。前述抓持爪^ 係可嵌合業已設置於前述下夾體21上面之凹部21&In order to solve the aforementioned disadvantages, as shown in Figs. 14A and 14B, there has been a method of performing resin sealing by attaching a film 9 under the lead frame 1 to integrate them. However, in the conventional resin sealing method, only the area 9a shown by hatching in Fig. 14A can be clamped by the upper and lower molds. Therefore, the area 9b of the film 9 shown by the wavy line 5 in FIG. 14B, that is, not only the inner edge portion below the outermost lead 4 but also the entire underside of the die seat 2 is not completely adhered to the film 9 . As a result, the injected resin 8 expands and coats under the lead 4 or under the die pad 2, the resin remains in an expanded state and solidifies, which may cause unevenness under the final product. Therefore, another 10-piece resin sealing method has been proposed (for example, refer to Patent Document 1) Patent Document 1 International Publication No. 00/66340, that is, a lead frame that overlaps with an adhesive film and has a flat-walled surface. The lower clamp body is clamped and attached to the upper clamp body with a grid-shaped pressing protrusion—the body I5 is then sealed with resin. Problems to be Solved by the Invention However, in the aforementioned film bonding method, the lead frame, the upper and lower clamps, the thickness of the 精度, and the surface accuracy are all uneven. Therefore, in the case where it has already been combined, due to the cumulative error, the pressing load on the upper and lower clamps is not uniform. As a result, the film cannot be uniformly adhered to the lower surface of the lead frame, and the resin cannot be completely prevented from entering the gap between the film and the lead frame when the resin is sealed. [Meichi 3 Summary of the Invention In view of the foregoing shortcomings, the present invention aims to provide a film adhesion device and a film 1228808 adhesion method. The film adhesion device can completely prevent the expansion of the resin during resin sealing and can make The film is uniformly adhered under the semiconductor device and integrated. Means for Solving the Problem 5 In order to achieve the above-mentioned object, the film bonding device of the present invention is capable of freely peeling a film under a substrate that has been connected by a wire to a semiconductor wafer mounted on a die holder and a lead, and The film attachment device is composed of an upper clip body and a lower clip body. The upper clip system has a recess below that does not interfere with the semiconductor wafer and the wires, and the lower clip body is provided with the 10 films. The mounting surface is provided with a vent hole, and the outer peripheral portion of the substrate is clamped by the lower clamp body and the upper clamp body, and the gas return from the vent hole can be switched from negative pressure to positive pressure. In addition, the substrate includes not only a lead frame made of a metal monomer, but also a resin substrate made of a resin material, for example, a high-definition organic package substrate. According to the present invention, by switching the gas return flow from the vent holes in the lower clamp body from a negative pressure to a positive pressure, the film can be pressed on the substrate with air pressure without damaging the semiconductor wafer and the wires. . Therefore, the aforementioned film systems are uniformly adhered to the substrate and are integrated with each other. As a result, even if sealed with a resin, the resin does not spread under the substrate, and a good semiconductor device can be obtained. A vent hole communicating with the recess of the upper clamp body may also be provided. According to this embodiment, the gas is exhausted through the ventilation holes. Therefore, even if the gas return flow of the ventilation holes is switched from negative pressure to positive pressure, no gas will remain between the film and the substrate. 1228808, the film and the substrate can be more reliably Ground close to integration. In the recess of the upper clamp body, a position restricting protrusion for restricting excessive floating of the substrate may be provided in a protruding manner. According to this embodiment, the semiconductor substrate or the substrate can be prevented from being damaged by preventing the substrate from floating excessively. In the recess of the upper clamp body, a plurality of partitioning die seats may be protrudingly provided, and the clamping protrusions for clamping the substrate together with the lower clamp body. According to this embodiment, the clamping protrusion is used to reduce the floating of the substrate, and the film and the substrate are more surely adhered. 10 The vent holes located on the lower side of the aforementioned die seat may be discontinuous from the vent holes located on the lower side of the die seat. According to this embodiment, the above-mentioned vent holes located on the lower side of the die seat and the vent holes located on the side other than the lower side of the die seat can switch the gas backflow from negative pressure to positive pressure at different points in time. 15 The mounting surface of the clamp body under the mounting film may also be formed with a ventilation groove connected to most of the vent holes and located on the lower side of the lead. According to this embodiment, if the gas return flow of the vent hole is switched from negative pressure to positive pressure, the film located at the portion where the vent groove is formed can be firmly adhered to the lead frame. Therefore, it is possible to prevent the resin from spreading toward the back side of the bow 20 line during the resin sealing, and it is possible to surely prevent poor contact. In particular, on the mounting surface on which the clips under the film are placed, there may be formed a ventilation groove connected to a plurality of ventilation grooves, and located on the lower side of the free end of the lead before cutting. According to this embodiment ', by switching the gas backflow of the vent hole from negative pressure to positive pressure, the film can be surely quilted at the free end edge of the lead wire before the compilation. Therefore, it is possible to prevent the resin from spreading toward the lead surface during the resin sealing, and to prevent contact failure more surely. ~ The film may have a peeling tongue having a shape protruding from the outer peripheral edge portion of the substrate at least at the -end edge portion. According to this embodiment, the film peeling operation after resin sealing is simpler, more convenient, and can be easily automated. The film attaching method of the present invention is a method in which a film can be freely peeled and attached to a substrate which has been connected by a wire to a semiconductor wafer mounted on a die holder and a lead substrate. The mounting surface with a vent hole is formed on the film, and the substrate is used to have a recess on the lower surface that does not interfere with semiconductor wafers and wires. Then, the step of letting gas out through the aforesaid vent holes is formed. ， 可 乃 沄, is the film can be peeled freely_ Adhering to the substrate of the cast crystal line M which has been connected to the die seat with the material line, and it is because of the position The mounting surface of the air hole is used to attract and hold the front chaos through the air hole and overlap the substrate on the film. The upper body and the lower body are used to tightly clamp the negative substrate by using the upper body and the lower body to interfere with the recesses of the semiconductor chip and the wire. After the peripheral edge portion, a step of returning the gas from the vent hole to a positive pressure is configured. All of the aforementioned inventions press the film with the gas discharged from the air vent, so that the film and the substrate can be adhered to the ground uniformly and adhered to the body. ㈣ 1228808 Even when sealed with resin, the resin does not spread under the substrate, resulting in a good semiconductor device. In addition, according to the embodiment of the present invention, after the aforesaid vent holes located on the lower side of the die seat are switched from negative pressure to positive pressure, the vent holes located on the other side below the die seat are switched from negative pressure to negative pressure. Positive pressure. According to this embodiment, the aforementioned film gap is adhered to the lower surface of the die pad first, and then to the leads and the like located around the die pad. Therefore, it is difficult for the gas to remain between the substrate and the film, and the two can be closely integrated without gaps. 10 Moreover, the previously attached substrate and film may be placed on the heating body 'and the heating body may be heated to make the substrate and the film more dense. According to this embodiment, there is an effect that the substrate and the film can be more firmly adhered and integrated with each other. 15 Embodiments of the Invention Embodiments of the present invention will be described with reference to FIGS. 1 to 11. As shown in Figs. 1 to 6, the case where the film bonding apparatus 10 according to the first embodiment is incorporated in the resin sealing apparatus 40 will be described. The aforementioned film sticking device 10 shown in Fig. 1 has a film sticking unit 20 composed of a lower holder 21 and an upper holder 25 as shown in Figs. 2 to 5 of Fig. 20. In addition, as shown in FIG. 1, the film bonding unit 20 is a unit in which a film 30 'supplied by a krypton supply unit worker and a lead frame 31 supplied by the input buffer unit η are bonded together. As shown in FIG. 2, the lower clip body 21 is configured to attract and hold the film 30 by arranging the vent holes 22 and 23 at a predetermined distance of 10 1228808 on the surface. In particular, as shown in FIG. 6B, in the aforementioned vent holes 22, 23, the central vent hole is arranged at the lower center of the grain base 32, and the crotch vent hole 23 is arranged at the center of the aforementioned grain base 33. The crotch on the diagonal. However, the central vent holes 5 22 and the vent air holes 23 are not in communication with each other, and the systems for controlling the suction and discharge of gas are different. In addition, as shown in FIG. 3, the upper clamp body 25 can be moved up and down through the slide shaft 26, and can be positioned on the lower clamp body 21. In addition, a recess 25a is provided on the lower surface of the aforementioned inflammable body 25 so as not to interfere with the semiconductor wafer% of the substrate 31 and the lead 105 and the like. In addition, the lower edge portion of the upper inflammation body 25 is provided with gripping claws 27 for locking and grasping both edge portions of the lead frame 31. The aforementioned gripping claw ^ is a recess 21 &
月 |J 述凹處25a之頂面係形成有限制引線架㈣度浮起之位置 限制用突部28，且以預定間隔形成有通風孔25b。 15 此外，前述由膜供給單元11供給之膜30，亦可由直尺 狀之連續帶狀片切成必要之長度而使用，或者亦可僅載置 業已預先切成者而使用。又，前述引線架31結束黏晶步驟、 打線接合之步驟，搭載於晶粒座32之半導體晶片33與弓|線 34業已利用導線35電性連接。化係使晶粒座％支撐於引 2〇 架31之繫桿。 、、’、 又，黏著於前述引線架31之前述膜3〇，並不限定普通 之黏著類型，例如，可為加熱而增加黏著力之熱溶類型、 或者藉紫外線可輕易地剝離之類型等。 又，前述輸入E緩衝單元12，係堆積收納有多數引線 11 1228808 架31之匣13。前述匣 mu係透過匣升降單元14搬送，將引線 二一=地供給至科之待機台15。 、 著針對以則迷膜貼著襄置10使膜貼著於引線架31 並一體化之步驟進行說明。 、 位於膜貼著單元2〇 固持前述膜30 百先最初，使由膜供給單元11供給之膜30載置並定 之下夹體21，且透過通氣孔22、23吸引、 且，同時使匣13由輸入匣緩衝單元12透過 E升降單元14搬送。拯 要著，由匣13'--地供給引線架31， 使其於待機台15待機。 10 以前述 前述膜30及前述引線架31之 且以上夾體25之抓持爪27抓持引 線架31之兩端緣並搬送，並堆積於前述膜3〇。且 下夾體21與前述上失體25夾緊 周邊緣部。 然後，使中央通氣孔22之氣體回流由負壓切換至正壓 後’使隅部通氣孔23之氣體回流由負壓切換至正壓。因此， 15位於晶粒座32之下面中央之膜3〇之-部份密著後，膜30依 序松著並貼著於繫桿31a、引線34下面。膜3〇係由晶粒座^ 之下面中央朝外側貼著，因此，膜3〇與引線架31之間殘留 之空亂被壓出。且，壓出之空氣係由上夾體25之通風孔祝 排出至外部。 2〇 且，藉使氣體由前述下夾體21之中央通氣孔22及隅部 通氣孔23吐出，朝上方按壓密著之膜3〇與引線架31，膜3〇 與引線架31更加牢固地貼著一體化。然而，引線架31僅浮 起預疋畺時，位置限制用突部28係抵接引線架31中位於封 裝與封裝之間之部分而限制引線架31之位置，防止引線架 12 1228808 31之塑性變形。 膜之貼著一體化，係不限於前述實施形態，例如，亦 可藉由上夾體25之通風孔25b吸引並減壓，使前述膜3〇及前 述引線架31相互地吸引並貼著一體化。 5 又，膜30之另一貼著方法係亦可供給膜30至下夾體21 後，載置引線架31並決定位置。接著，加熱下夾體21，使 膜30之黏著力增加後，使前述膜3〇及前述引線架31相互地 吸引而貼著一體化。 業已使膜30貼著一體化之前述引線架31，係如第1圖所 1〇示，透過撿拾與加壓單元16搬送至樹脂密封裝置40之引線 架傳送單元41。搬送至前述引線架傳送單元41之引線架31 係透過内裝載機42搬送至預熱單元43，並加熱預定時間。 且’内裝載機42接收業已加熱之引線架31與錠搬運器 44所搬來之錠45(固體樹脂材料），並搬送至業已安裝於加壓 15單兀46之下模47。且，將引線架31與錠45放置於下模47之 預定位置。 接著’使下模47上升並壓接於圖未示之上模，而失緊 引線架31並形成孔，且以圖未示之導熱單元加熱、熔解樹 脂，並射出至前述孔内以充填之，而密封半導體晶片33、 20 導線35等。 使下模47下降而使上模敞開後，以卸載機48由下模47 取出樹脂密封結束之引線架36，並搬送至雙·睡口式單元 49。雙鱷口式單元49由搬來之樹脂密封結束之引線架％分 離製ασ37與僅由樹脂構成之，並將不需要之部分38丟棄。 13 I2288〇8 ★ 射口單元50將雙鱷口式單元49上之製品37搬送至 膜到離單；^。膜剝離單元51將製品37之貼著於引線架Μ 下面之膜30剝離。膜30之剝離作業，例如，可舉例有以膜 夾頭單元（圖未示）夾住由膜3Q—端延伸出之舌片，由製品 5 了面制離之方法。又，亦可於引線_之一部份設置缺口 部（圖未示），並抓住由該缺口部露出之膜3〇且由製品之下面 剝離。 然後，撿拾單元50將業已剝離膜30之製品37搬送並堆 積於輸出緩衝單元52。 10 本發明之第2實施形態，係如第7Α、7Β圖所示，係與 前述第1實施形態大致相同。不同之處在於係區隔為多數半 導體裝置（第7Β圖），與前述第1實施形態以一定之間隔配置 所有半導體裝置不同（第6Α圖）。依據本實施形態，如第7Α 圖所示，於上夾體25之凹處25a之頂面形成有前述位置限制 15用突部28，且形成有分別夾緊多數前述半導體裝置之夾緊 用突部29。 依據本實施形態，可有效率地限制引線架31之浮起， 因此，具有可更加確實地貼著一體化之優點。 第3實施形態係如第8圖所示，係適用於具有與第2實施 20 形態不同形狀之引線34之引線架31之情況。於同一部分附 上同一編號並省略說明。然而，31b係表示切線，28a則係 表示位置限制用突部28(第8B圖）所按壓之領域之邊界線， 然而，但沒有圖示半導體晶片。 第4實施形態，係如第9圖所示，係使用與第3實施形態 14 !228808 同一形狀之引線架31之情況，不同之處在於在下夾體21上 面設置有相互連接多數隅部通氣孔23之通氣溝23a(以剖面 顯示）。前述通氣溝23a係位於引線架31中切割開前之引線 34之自由端下方側，且，係形成為連續。 · 5 依據本實施形態，藉使隅部通氣孔23之氣體回流由負 ^ 壓切換至正壓，可使膜30確實地密著而貼著於切斷前之引 線34之自由端緣部。因此，於樹脂密封時可防止樹脂擴展 至引線34裡面側，可更加確實地防止接觸不良。 本發明之第5實施形態，係如第1〇圖所示，係與前述第 鲁 10 1實施形態大致相同。不同之點在於膜貼著步驟之下一步驟 中配置有加熱體17。 第5實施形態中，係將藉前述步驟密著之膜30及引線架 31載置於加熱體17並加熱。因此，具有可使前述膜30及前 述引線架31更加牢固地密著之優點。 15 本發明之第6實施形態，係如第11圖所示，係使帶貼著 裝置10為完全獨立活動之類型。 本實施形態中，至膜30與引線架31貼著一體化之前為 ® 同一步驟。且，以加熱體17加熱業已貼著於膜30而一體化 之引線架31後，以運送機等之搬送至引線架輸出單元19， 20 並收納於空匣19a。且，第6實施形態中，以自動樹脂密封 - 裝置或手動加壓裝置進行樹脂密封。此外，本實施形態中， 不一定需要加熱體17，可配合使用之膜選擇是否加熱。 依據本實施形態，可使膜貼著裝置W單獨地動作。因 此，可自由地選擇裝置於工廠内之設置位置，具有設置空 15 1228808 間之自由度增加之優點。 前述實施形怨中，敘述了於供氣並加壓之狀態下使膜 30及引線架31貼著之方法、於吸氣並減壓之狀態下使膜3〇 及引線架31貼著之方法、以吸引與供氣使膜3〇及引線架“ 5貼著之方法、及以吸引與供氣使膜30及引線架31密著後， 藉加熱使膜之黏著力增加，使膜及引線架更加牢固地密著 之方法。 此外，亦可於夾緊之上下夾體中，一面以下夾體加熱， 一面於供氣至下夾體且加壓之狀態下使兩者密著，或者一 10面以下夾體加熱，一面於使上夾體内吸氣並減壓之狀態下 使兩者貼著一體化。依據本方法，可有效率地且省空間地 使膜及引線架貼者'體化。 發明之效果 依據本發明，藉使來自下夾體中之通氣孔之氣體回流 15由負壓切換至正壓，於不會使半導體晶片及導線等損傷之 情況下，可以氣壓將膜按壓於基板。因此，膜係均一地密 著於基板，並相互地貼著一體化。其結果為即使以樹脂密 封’樹脂亦不會擴展至基板下面，得到良好之半導體裝置。 【囷式簡單說明】 20 第1圖係本發明之第1實施形態之半導體樹脂密封裝置 之俯視圖。 第2圖係顯示本發明之第1實施形態之膜貼著裝置之截 面圖。 第3圖係顯示接續第2圖之膜貼著步驟之圖。 1228808 第4圖係顯示接續第3圖之膜貼著步驟之圖。 第5圖係顯示接續第4圖之膜貼著步驟之圖。 第6A圖係顯示引線架之支撐領域之俯視圖，第6B圖則 係第6 A圖之部分放大圖。 5 第7A圖係顯示第2實施形態之膜貼著步驟之截面圖，第 7B圖係顯示引線架之支撐領域之俯視圖。 第8A圖係顯示第3實施形態之引線架之支撐領域之俯 視圖，第8B圖係顯示膜貼著裝置之截面圖。 第9A圖係顯示第4實施形態之引線架之支撐領域之俯 10 視圖，第9B圖係顯示膜貼著裝置之截面圖。 第10圖係本發明之第5實施形態之半導體樹脂密封裝 置之俯視圖。 第11圖係本發明之第6實施形態之半導體樹脂密封裝 置之俯視圖。 15 第12A圖、12B圖、12C圖係顯示習知例之半導體裝置 之樹脂密封步驟之說明圖。 第13A圖及第13B圖係顯示習知例之半導體裝置之樹 脂密封方法之俯視圖及截面圖。 第14圖及第14B圖係習知例之另一半導體裝置之樹脂 20 密封方法之俯視圖及放大截面圖。 【圖式之主要元件代表符號表】 10…膜貼著裝置 11...膜供給單元 12…輸入匣緩衝單元 17 1228808 13···匣 14.. .匣升降單元 15.. .待機台 16.. .撿拾與加壓單元 17.. .加熱體 18.. .搬送裝置 19…引線架輸出單元 19a...空匣 20…膜貼著單元 21.. .下夾體 21a···凹部 22.23.. .通氣孔 23a...通氣溝 25.. .上夾體 25a···凹處 25b...通風孔 26.. .滑動軸 27.. .抓持爪 28.. .限制用突部 28a...邊界線 29…夾緊用突部 30.. .膜 31.. .引線架，基板 31b…切線 1228808 32.. .晶粒座 33.. .半導體晶片 34.. .引線 35.. .導線 36…樹脂密封結束之引線架 37.. .製品 38·.·不需要之部分 40.樹脂密封裝置 41.. .引線架傳送單元 42.. .内裝載機 43…預熱單元 44.. .錠搬運器 45···錠 46…加壓單元 47.. .下模 48···卸載機 49···雙鱷口式單元 50…撿拾單元 51.. .膜剝離單元 52.. .輸出緩衝單元The top surface of the recess 25a is provided with a position-limiting protrusion 28 for restricting the height of the lead frame, and ventilation holes 25b are formed at predetermined intervals. 15 In addition, the film 30 supplied from the film supply unit 11 described above may be used by cutting it with a ruler-like continuous band-shaped sheet to a necessary length, or it may be used by placing only the previously cut one. In addition, the aforementioned lead frame 31 ends the die-bonding step and the wire bonding step, and the semiconductor wafer 33 and the bow | wire 34 mounted on the die base 32 have been electrically connected by the wire 35. The chemical system makes the grain seat% supported on the tie rod of the 20 frame 31. The above-mentioned film 30 adhered to the lead frame 31 is not limited to a common type of adhesion, for example, a hot-melt type that can increase the adhesive force for heating, or a type that can be easily peeled off by ultraviolet rays, etc. . The input E buffer unit 12 is a box 13 in which a plurality of leads 11 1228808 and a rack 31 are stacked and stored. The aforementioned box mu is transported through the box lifting unit 14 and the leads are supplied to the stand-by stand 15 of the section. The steps of integrating the film with the lead frame 31 and integrating the film with the mask 10 are described below. The film attachment unit 20 holds the aforementioned film 30 hundred years ago. At first, the film 30 supplied by the film supply unit 11 is placed and fixed under the clip 21, and is sucked through the vent holes 22, 23, and the cassette 13 is simultaneously It is carried by the input cassette buffer unit 12 through the E lifting unit 14. To save the life, the lead frame 31 is supplied from the box 13 ′ to the ground, and is made to wait on the stand 15. 10 The two ends of the lead frame 31 are grasped and held by the gripping claws 27 of the clip 25 above and above the film 30 and the lead frame 31, and are stacked on the film 30. The lower clamp body 21 and the aforementioned upper loss body 25 clamp the peripheral edge portion. Then, after the gas return of the central vent hole 22 is switched from the negative pressure to the positive pressure, the gas return of the crotch vent hole 23 is switched from the negative pressure to the positive pressure. Therefore, after 15-part of the film 30 located in the center of the lower surface of the die base 32 is tightly adhered, the film 30 is sequentially loosened and attached to the bottom of the tie rod 31a and the lead 34. The film 30 is adhered from the center of the lower surface of the die holder ^ toward the outside, so that the remaining space between the film 30 and the lead frame 31 is pressed out. Moreover, the extruded air is exhausted to the outside through the ventilation holes of the upper clamp body 25. 20 Moreover, if the gas is expelled from the central vent hole 22 and the crotch vent hole 23 of the lower clip 21 described above, the tight film 30 and the lead frame 31 are pressed upward, and the film 30 and the lead frame 31 are more firmly attached.着 Integration. However, when the lead frame 31 only floats in advance, the position restricting protrusion 28 abuts the portion of the lead frame 31 between the package and the package to restrict the position of the lead frame 31 to prevent the plasticity of the lead frame 12 1228808 31 Deformation. The adhesive integration of the film is not limited to the aforementioned embodiment. For example, the film 30 and the lead frame 31 can be attracted to and integrated with each other through the ventilation holes 25b of the upper clip 25 and decompressed. Into. 5. Another method for attaching the film 30 is to supply the film 30 to the lower holder 21, and then place the lead frame 31 and determine the position. Next, the lower body 21 is heated to increase the adhesive force of the film 30, and then the film 30 and the lead frame 31 are attracted to each other and integrated together. The aforementioned lead frame 31 having the film 30 integrated thereon is conveyed to the lead frame transfer unit 41 of the resin sealing device 40 through the pick-up and pressing unit 16 as shown in FIG. 10. The lead frame 31 transferred to the lead frame transfer unit 41 is transferred to the preheating unit 43 through the internal loader 42 and is heated for a predetermined time. And, the inner loader 42 receives the heated ingot 45 (solid resin material) carried by the lead frame 31 and the ingot carrier 44 and transfers it to the lower die 47 which has been installed under the pressure 15 unit 46. Further, the lead frame 31 and the ingot 45 are placed at predetermined positions of the lower die 47. Next, the lower die 47 is raised and crimped to the upper die (not shown), the lead frame 31 is loosened and a hole is formed, and the resin is heated and melted by a heat conducting unit (not shown), and injected into the aforementioned hole for filling. The semiconductor wafers 33, 20, and the like 35 are sealed. After the lower die 47 is lowered and the upper die is opened, the resin-sealed lead frame 36 is taken out from the lower die 47 by the unloader 48, and is transferred to the double-sleeper unit 49. The double crocodile-type unit 49 is made of the lead frame% separated from the resin-sealed lead frame ασ37 and is made of resin only, and the unnecessary portion 38 is discarded. 13 I2288〇8 ★ The nozzle unit 50 transfers the product 37 on the double crocodile unit 49 to the film to the delivery; ^. The film peeling unit 51 peels off the film 30 of the product 37 attached to the lead frame M. The peeling operation of the film 30 may be, for example, a method in which a tongue piece extending from the 3Q end of the film is clamped by a film chuck unit (not shown), and the product is removed from the surface. In addition, a notch portion (not shown) may be provided on a part of the lead wire, and the film 30 exposed from the notch portion may be grasped and peeled off from the lower surface of the product. Then, the pick-up unit 50 transfers and deposits the product 37 of the peeled film 30 on the output buffer unit 52. 10 The second embodiment of the present invention is shown in Figs. 7A and 7B, and is substantially the same as the first embodiment. The difference is that the semiconductor device is divided into a plurality of semiconductor devices (Fig. 7B), which is different from the first embodiment in which all semiconductor devices are arranged at a certain interval (Fig. 6A). According to this embodiment, as shown in FIG. 7A, a protrusion 28 for the position restriction 15 is formed on the top surface of the recess 25a of the upper clamp 25, and a protrusion for clamping a plurality of the semiconductor devices is formed. Department 29. According to this embodiment, since the floating of the lead frame 31 can be effectively restricted, there is an advantage that the lead frame 31 can be integrated more reliably. The third embodiment is applied to a lead frame 31 having a lead 34 having a shape different from that of the second embodiment 20, as shown in FIG. The same number is attached to the same part and the description is omitted. However, 31b indicates a tangent line, and 28a indicates a boundary line of a region pressed by the position restricting projection 28 (Fig. 8B). However, the semiconductor wafer is not shown. The fourth embodiment, as shown in FIG. 9, is a case where a lead frame 31 having the same shape as that of the third embodiment 14 is used. The difference is that the lower clip 21 is provided with a plurality of sacral vents connected to each other. Ventilation groove 23a of 23 (shown in cross section). The vent groove 23a is located below the free end of the lead 34 before cutting in the lead frame 31, and is formed continuously. · 5 According to this embodiment, if the gas return flow of the vent hole 23 of the crotch is switched from a negative pressure to a positive pressure, the film 30 can be reliably adhered to the free end edge of the lead wire 34 before cutting. Therefore, the resin can be prevented from spreading to the back surface of the lead 34 during the resin sealing, and the contact failure can be prevented more reliably. The fifth embodiment of the present invention, as shown in Fig. 10, is substantially the same as the first embodiment of the tenth embodiment. The difference is that the heating body 17 is arranged in the next step of the film adhering step. In the fifth embodiment, the film 30 and the lead frame 31 adhered by the aforementioned steps are placed on a heating body 17 and heated. Therefore, there is an advantage that the film 30 and the lead frame 31 can be adhered more firmly. 15 A sixth embodiment of the present invention is shown in Fig. 11 in which the tape attaching device 10 is a type that can move completely independently. In this embodiment, the same process is performed until the film 30 and the lead frame 31 are integrated together. Then, the lead frame 31 integrated with the film 30 is heated by the heating body 17, and then transported to a lead frame output unit 19, 20 by a conveyor or the like and stored in an empty box 19a. Further, in the sixth embodiment, resin sealing is performed by an automatic resin-sealing device or a manual pressurizing device. In addition, in this embodiment, the heating body 17 is not necessarily required, and it is possible to select whether or not to heat the film according to the use. According to this embodiment, the film sticking device W can be operated independently. Therefore, the installation position of the device in the factory can be freely selected, which has the advantage of increasing the degree of freedom in the installation space 15 1228808. In the foregoing description, the method of attaching the film 30 and the lead frame 31 under the state of supplying air and pressurizing, and the method of attaching the film 30 and the lead frame 31 under the state of inhaling and decompressing are described. The method of attaching the film 30 and the lead frame 5 by suction and air supply, and the adhesion of the film 30 and the lead frame 31 with suction and air supply, and then increasing the adhesive force of the film by heating, so that the film and lead In addition, the upper and lower clamps can be clamped, while the lower clamps are heated, while the air is supplied to the lower clamps and pressurized, or the two are adhered. 10 clips or less are heated, while the two clips are integrated under the condition of inhaling and decompressing the upper clip. According to this method, the film and lead frame can be efficiently and space-savingly attached. Effect of the Invention According to the present invention, if the gas return 15 from the vent hole in the lower holder is switched from negative pressure to positive pressure, the film can be pressured by air pressure without damaging the semiconductor wafer and wires. Press on the substrate. Therefore, the film is evenly adhered to the substrate and adheres to each other. As a result, even if the resin is sealed with resin, the resin will not spread below the substrate and a good semiconductor device will be obtained. [Simple description of the formula] 20 FIG. 1 is a plan view of the semiconductor resin sealing device according to the first embodiment of the present invention. Fig. 2 is a cross-sectional view showing the film sticking device of the first embodiment of the present invention. Fig. 3 is a drawing showing the steps of sticking the film following Fig. 2 1228808 Fig. 4 is a drawing showing the steps following Fig. 3 The diagram of the film attaching steps. Fig. 5 is a diagram showing the steps of attaching the film following Fig. 4. Fig. 6A is a top view showing the supporting area of the lead frame, and Fig. 6B is an enlarged view of a part of Fig. 6A. Fig. 7A is a cross-sectional view showing the film attaching step of the second embodiment, and Fig. 7B is a top view of the supporting area of the lead frame. Fig. 8A is a top view of the supporting area of the lead frame of the third embodiment. Fig. 8B is a cross-sectional view showing the film attachment device. Fig. 9A is a top 10 view showing the support area of the lead frame of the fourth embodiment, and Fig. 9B is a cross-sectional view showing the film attachment device. Fig. 10 This is the fifth embodiment of the present invention. A plan view of a semiconductor resin sealing device in a form. Fig. 11 is a plan view of a semiconductor resin sealing device in a sixth embodiment of the present invention. Figs. 12A, 12B, and 12C show resin sealing steps of a conventional semiconductor device. 13A and 13B are a plan view and a cross-sectional view showing a resin sealing method of a conventional semiconductor device. Figures 14 and 14B are resin 20 sealing methods of another conventional semiconductor device. Top view and enlarged cross-sectional view. [Representative symbols for the main components of the drawing] 10 ... film attaching device 11 ... film supply unit 12 ... input box buffer unit 17 1228808 13 ... box elevator unit ... 15 .. Stand-by stage 16. Pick-up and press unit 17. Heater 18. Transfer unit 19 ... Lead frame output unit 19a ... Empty box 20 ... Film attachment unit 21 .... Clip 21a ... Recess 22.23 ... Ventilation hole 23a ... Ventilation groove 25 ... Upper clip 25a ... Recess 25b ... Ventilation hole 26 ... Sliding shaft 27 ... Grasp Claw 28 .. Limiting protrusion 28a ... Boundary line 29 ... Clamping protrusion 30 .. Film 31 .. Lead frame, base Board 31b ... Tangent line 1228808 32 .. Die holder 33 .. Semiconductor wafer 34 .. Lead 35 .. Lead 36. Resin sealed lead frame 37 .. Product 38 .. Unwanted part 40 Resin sealing device 41 .. Lead frame transfer unit 42 .. Internal loader 43 ... Preheating unit 44 .. Ingot carrier 45 ... Ingot 46 ... Pressing unit 47 ... Lower die 48 ... · Unloader 49 ··· Double crocodile unit 50… Pickup unit 51 ... Film peeling unit 52 .. Output buffer unit