JP2003324042A - Substrate bonding method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate bonding method for efficiently suppressing a void occurred in an adhesive when a substrate where a fine projecting part exists is bonded to the other substrate and for bonding the substrates with good flat precision. <P>SOLUTION: A surface coating layer is formed on the projecting part of the first substrate where the projecting part is formed on a surface. A plurality of space holding members are formed on the surface coating layer. A first adhesive film formed of a film layer and an adhesion layer is bonded to a face opposite to an adhesion face of the first substrate. A second adhesive film formed of a film layer and an adhesion layer is bonded to a face opposite to an adhesion face of the second substrate. The adhesive is applied to the surface coating layer, the second substrate is arranged on the adhesive, and the surface coating layer is bonded to the second substrate. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate adhering method for adhering a surface of a substrate having a convex portion formed on its surface having a convex portion to another substrate.

[0002]

2. Description of the Related Art Conventionally, in the process of manufacturing a semiconductor device, a semiconductor device is formed on a semiconductor growth substrate such as a sapphire substrate, and the surface on which the semiconductor device is formed is adhered to a supporting substrate which is another substrate. In some cases, the semiconductor element is transferred to the supporting substrate by separating the semiconductor element from the semiconductor growth substrate, and the semiconductor element is handled.

Generally, when forming semiconductor elements on a semiconductor growth substrate, the spacing between the semiconductor elements is reduced to reduce the manufacturing cost, and the number of semiconductor elements per semiconductor growth substrate is increased. Is required. FIG.
As shown in (a), the adhesive 3 is applied onto the plurality of semiconductor elements 2 formed on the semiconductor element substrate 1 to adhere it to the support substrate 4. At this time, due to the spacing between the semiconductor elements 2 and the viscosity of the adhesive 3, the adhesive 3 may not be able to fully wrap around between the semiconductor elements 2, and the semiconductor growth substrate 1 and the support substrate 4 When the
As shown in (b), voids 5 which are regions where the adhesive 3 is not filled have been generated.

If a void 5 is generated in the adhesive 3 when the semiconductor growth substrate 1 and the support substrate 4 are attached to each other, the semiconductor element 2 of the semiconductor element 2 is removed when the semiconductor growth substrate 1 and the semiconductor element 2 are separated in a later step. It will cause scattering. Therefore, it is necessary to apply an adhesive so that the voids 5 are not generated and carefully and delicately control the bonding between the semiconductor element substrate 1 and the supporting substrate 4, but the work efficiency is reduced and the manufacturing cost is increased. It is not preferable because it leads to.

Even in the process after the semiconductor element substrate 1 and the semiconductor element 2 are peeled off, the voids 5 may not disturb the arrangement of the semiconductor elements 2 due to the handling of the support substrate 4 and the semiconductor elements 2. Not preferable. Further, in the case of forming a via hole reaching the semiconductor element 2 by etching or the like, if the arrangement of the semiconductor elements 2 is not flat, the semiconductor elements 2 may be damaged due to partial overetching, or the electrical power may be insufficient due to insufficient etching. Since a defective connection may occur in a later process, good flatness is also required when the substrates are attached to each other.

[0006]

SUMMARY OF THE INVENTION Therefore, according to the present invention, a plurality of semiconductor elements are formed on a semiconductor growth substrate, and an adhesive is applied to the surface on which the semiconductor elements are formed to form another substrate and the semiconductor growth substrate. It is possible to effectively suppress the voids that occur in the adhesive when adhering a substrate having a minute convex portion such as to be adhered to another substrate, and to bond the substrate with good flatness accuracy. An object is to provide a possible substrate bonding method.

[0007]

According to a substrate bonding method of the present invention for solving the above-mentioned problems, a surface coating layer is formed on the convex portion of a first substrate having a convex portion formed on the surface, An adhesive is applied to the surface coating layer, the second substrate is placed on the adhesive layer made of the adhesive, and the surface coating layer and the second substrate are provided.
It is characterized in that it is adhered to the substrate.

By applying an adhesive after forming a surface coating layer on the surface of the semiconductor growth substrate on which the semiconductor elements are formed and the convex portions are present, the occurrence of voids, which is a poor wraparound of the adhesive, is prevented. can do.

Further, in the substrate adhering method of the present invention, a surface coating layer is formed on the convex portion of the first substrate having a convex portion formed on the surface, and a plurality of spacing members are formed on the surface coating layer. And applying an adhesive to the surface coating layer and disposing the second substrate on the adhesive layer made of the adhesive to bond the surface coating layer and the second substrate. Characterize.

By applying an adhesive after forming a surface coating layer on the surface of the semiconductor growth substrate on which the semiconductor element is formed and the convex portion is present, it is possible to prevent the occurrence of voids, which is a poor wraparound of the adhesive. can do. Further, since the semiconductor growth substrate and the supporting substrate are adhered by the adhesive via the posts which are the spacing members having substantially the same height, the film thickness of the adhesive can be made uniform. Further, by forming the spacing member at a position overlapping the convex portion with a material having a higher light transmittance than the adhesive, it is possible to improve the light extraction efficiency when the convex portion is a light emitting element. Further, by using a material having a low light transmittance as the adhesive, it is possible to perform a blackened display when the convex portion does not emit light.

Further, in the substrate adhering method of the present invention, a surface coating layer is formed on the convex portion of the first substrate having a convex portion formed on the surface, and a plurality of spacing members are provided on the surface coating layer. And a pressure-sensitive adhesive film composed of a film layer and a pressure-sensitive adhesive layer is attached to the surface of the first substrate or the second substrate opposite to the bonding surface, and an adhesive is applied to the surface coating layer. Then, the second substrate is arranged on an adhesive layer made of the adhesive, and the surface coating layer and the second substrate are adhered to each other.

Since the pressure-sensitive adhesive film has a multi-layer structure composed of a pressure-sensitive adhesive and a film, the pressure-sensitive adhesive film and the semiconductor growth substrate, or between the pressure-sensitive adhesive film and the supporting substrate,
When minute deposits are present, the deposits are buried in the pressure-sensitive adhesive layer. Therefore, when pressure is applied from above the pressure-sensitive adhesive film using the pressure plate, it is possible to prevent the pressure from concentrating on the periphery of the adhered matter, and to apply uniform pressure on the entire surface to reduce the adhesive film thickness. It is possible to bond the semiconductor growth substrate and the supporting substrate so as to be uniform.

Further, in the substrate bonding method of the present invention, a surface coating layer is formed on the convex portion of the first substrate having a convex portion formed on the surface, and a plurality of spacing members are provided on the surface coating layer. A first adhesive film composed of a film layer and an adhesive layer is attached to the surface of the first substrate opposite to the adhesive surface, and the surface of the second substrate opposite to the adhesive surface. A second pressure-sensitive adhesive film composed of a film layer and a pressure-sensitive adhesive layer is adhered to, and the area of the surface of the first pressure-sensitive adhesive film bonded to the first substrate is The area of the surface of the second adhesive film that is bonded to the second substrate is larger than the area of the surface of the second adhesive film that is bonded to the first adhesive film. Is larger than the area of the surface to be adhered, and an adhesive is applied to the surface coating layer to Substrate bonding method characterized by the substrate disposed on the adhesive layer composed of the adhesive is performed adhesion between the said surface coating layer a second substrate.

The adhesive film attached to the semiconductor growth substrate and the support substrate is larger than the semiconductor growth substrate and the support substrate, and the adhesive which has spilled over to the side surfaces of the semiconductor growth substrate and the support substrate and the surface coating layer in the surplus portion of the adhesive film. Since it is held by holding it, it is possible to suppress the occurrence of voids in which the adhesive flows out between the supporting substrate and the surface coating layer and the adhesive is absent in the gap between the supporting substrate and the surface coating layer. Is possible.

Further, in the substrate adhering method of the present invention, the spacing member is formed on the semiconductor element of the first substrate having the semiconductor element arranged on the surface, the surface coating layer is formed on the semiconductor element, and the surface coating is performed. An adhesive is applied to the layer, the second substrate is arranged on the adhesive layer made of the adhesive, and the surface coating layer and the second substrate are adhered.

By making the post formed on the semiconductor element a conductive material, the post can be used as an electrode of the semiconductor element. Therefore, it is possible to omit the step of forming a via hole reaching the semiconductor element and filling the metal in the subsequent step in order to secure electrical connection with the semiconductor element. Further, the post formed on the semiconductor element is made of a material that can be selectively removed with respect to the adhesive, so that the support substrate is removed after the holding substrate and the support substrate are bonded, and the post is selectively removed. You can
Since the via reaching the semiconductor element is formed, the via for forming the electrode of the semiconductor element can be easily formed.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION [First Embodiment] A method for adhering a semiconductor growth substrate and a supporting substrate to which the present invention is applied will be described in detail below with reference to the drawings. FIG. 1 shows an embodiment of the present invention in which a plurality of semiconductor elements 2 are formed on a semiconductor growth substrate 1 and a surface of the semiconductor growth substrate 1 on which the semiconductor elements 2 are formed and a support substrate 4 are bonded with an adhesive 3. The typical sectional drawing of a state is shown.

A plurality of semiconductor elements 2 are formed on the semiconductor element substrate 1, and a surface (bonding surface) of the semiconductor growth substrate 1 on the side where the semiconductor elements 2 are formed has a surface so as to cover the semiconductor elements 2. The coating layer 6 is formed.

Here, as the semiconductor element substrate 1, for example, sapphire (including Al ₂ O ₃ , A surface, R surface, and C surface).
Although a substrate is used, any material suitable for forming the semiconductor element 2 on the surface may be used, and SiC (including 6H, 4H, and 3C) GaN, Si, ZnS, ZnO, AlN, Li.
It may be MgO, GaAs, MgAl ₂ O ₄ , InAlGaN, or the like. The semiconductor element 2 is, for example, a gallium nitride (GaN) -based compound semiconductor element, but the composition and structure are not limited as long as it is a semiconductor element formed on the semiconductor element substrate 1. The surface coating layer 6 may be a thermosetting resin such as a polyimide resin or an epoxy resin.

The supporting substrate 4 is a sapphire substrate, a quartz substrate, a metal plate, or the like, and is selected according to the application, but it is desirable that the supporting substrate 4 has good adhesiveness with the adhesive 3 and good surface flatness. .

Next, the step of adhering the semiconductor growth substrate 1 and the support substrate 4 will be described in detail below with reference to FIG. FIG. 2A shows a sapphire substrate which is a semiconductor growth substrate 1 on a metal organic compound vapor phase epitaxy method (MOCVD (MOCVD (MOCVD)).
FIG. 5 is a schematic cross-sectional view showing a state in which a GaN-based semiconductor element 2 is formed by using the VPE method). In FIG. 2A, the shape of the semiconductor element 2 is expressed as a rectangular parallelepiped shape for simplification, but the semiconductor element 2 may be formed in a shape such as a columnar shape, a conical shape, or a hexagonal pyramid shape.

In the MOCVD method, TM is used as a Ga source.
G (trimethylgallium), TEG (triethylgallium), TMA (trimethylaluminum) and TEA (triethylaluminum) as Al sources, and TMI (trimethylindium) and TEI as In sources.
Alkyl metal compounds such as (triethylindium) are often used, and gases such as ammonia and hydrazine are used as nitrogen sources. As the impurity source, Si is silane gas, Ge is germane gas,
For Mg, a gas such as Cp ₂ Mg (cyclopentadienyl magnesium) is used, and for Zn, a gas such as DEZ (diethyl zinc) is used. In the general MOVPE method, these gases are supplied to the surface of the substrate heated to, for example, 600 ° C. or higher to decompose the gases, thereby producing InAlG.
It is possible to epitaxially grow an aN-based compound semiconductor. The semiconductor element 2 may be formed not only by the MOVPE method but also by a vapor phase growth method such as a molecular beam epitaxy method (MBE method) or a hydride vapor phase growth method (HVPE method).

Next, as shown in FIG. 2B, a polyimide resin is applied by spin coating to the surface (bonding surface) of the semiconductor growth substrate 1 on which the semiconductor element 2 is formed, and heat treatment is performed to apply the polyimide resin. Is solidified to form the surface coating layer 6. At this time, a resin such as an epoxy resin may be used instead of the polyimide resin.

Next, as shown in FIG. 2C, the adhesive 3 is applied on the surface coating layer 6. If only the adhesive 3 is applied, the adhesive becomes convex due to the surface tension of the adhesive 3, and the entire surface of the surface coating layer 6 is not always covered. Thereafter, as shown in FIG. 2D, the sapphire substrate which is the support substrate 4 is placed on the adhesive 3. At this time, by pressing the adhesive 3 with the support substrate 4, the adhesive 3
Spreads between the surface of the support substrate 4 and the surface of the surface coating layer 6,
The entire bonding surface of the support substrate 4 and the surface coating layer 6 is filled. When the adhesive 3 is cured, the adhesion between the substrate surface having the convex portions as shown in FIG. 1 and the supporting substrate is completed.

The surface of the surface coating layer 6 is flat by applying the adhesive 3 after forming the surface coating layer 6 on the surface of the semiconductor growth substrate 1 on which the semiconductor elements 2 are formed and the convex portions are present. Therefore, it is possible to prevent the occurrence of voids, which are defective in wraparound of the adhesive 3 due to the presence of the convex portion.

Further, when the formation of the surface coating layer 6 is completed, as shown in FIG.
At the stage of (b), the surface of the surface coating layer 6 may be subjected to a surface treatment that activates the surface and improves wettability with the adhesive 3. Examples of the surface treatment include oxygen plasma ashing, argon plasma treatment, acid treatment, and alkali treatment, which can be appropriately selected depending on the material of the surface coating layer 6 and the type of the adhesive 3. Surface coating layer 6
By applying the adhesive 3 after the surface of the adhesive 3 is surface-treated, it is possible to suppress the inclusion of bubbles in the adhesive 3 and the generation of voids in the process of the adhesive 3 diffusing on the surface coating layer 6. You can

Further, when the support substrate 4 is arranged on the adhesive 3, the adhesive 3 is partially preliminarily provided on the adhesive surface side of the support substrate 4.
It is also possible to arrange. FIG. 3A is a plan view showing a state in which the adhesive 3 is applied to the central portion of the adhesive surface of the support substrate 4. When the adhesive 3 on the surface coating layer 6 has a convex shape due to the surface tension, the central portion of the adhesive surface of the support substrate 4 and the adhesive 3 on the surface coating layer 6 come into contact first, so that the support substrate It is possible to prevent the occurrence of voids in the adhesive 3 at the time of the first contact between the adhesive 3 and the supporting substrate 4, by applying the adhesive 3 in advance to the central portion of the adhesive surface of the adhesive 4. it can.

FIG. 3B is a plan view showing a state in which the adhesive 3 is applied in advance to the outer peripheral portion of the adhesive surface in addition to the central portion of the adhesive surface of the support substrate 4. By applying the adhesive 3 to the outer edge portion as well, when the adhesive 3 is pressed by the support substrate 4 to spread the adhesive 3 on the surface coating layer 6, the adhesive 3 spreads in a certain direction. Even in this case, the effect that the adhesive 3 applied to the outer edge portion temporarily suppresses the expansion of the adhesive 3 and promotes the expansion of the adhesive 3 in other directions can be obtained. It is considered that this makes it possible to prevent the adhesive 3 from spreading only in a certain direction and fail to fill the adhesive 3 and to apply the adhesive 3 with a uniform film thickness. Here, the case where the adhesive 3 is applied to four places at equal intervals is shown, but the same effect can be obtained by applying the adhesive 3 to three or more places at equal intervals.
The application position and the number of application points are not limited.

[Second Embodiment] Next, another embodiment of the substrate bonding method of the present invention will be described in detail below with reference to the drawings. FIG. 4 shows another embodiment of the present invention in which a plurality of semiconductor elements 22 are formed on a semiconductor growth substrate 21 and a surface of the semiconductor growth substrate 21 on which the semiconductor elements 22 are formed and a support substrate 24 are bonded by an adhesive 23. The typical sectional view of the state where it adhered is shown.

A plurality of semiconductor elements 22 are formed on the semiconductor element substrate 21, and the semiconductor element 2 of the semiconductor growth substrate 21 is formed.
A surface coating layer 26 is formed on the surface on which 2 is formed (bonding surface) so as to cover the semiconductor element 22.
A plurality of posts 27 as spacing members are formed on the surface of the surface coating layer 26, and the support substrate 2 is provided via the posts 27.
4 and the surface coating layer 26 are attached by the adhesive 23. Further, the adhesive 23 fills a gap portion generated by the post 27 interposed between the support substrate 24 and the surface coating layer 26.

Here, as the semiconductor element substrate 21, for example, a sapphire (including Al ₂ O ₃ , A surface, R surface, and C surface) substrate is used, but it is suitable for forming the semiconductor element 22 on the surface. Any material can be used, such as SiC (6H, 4
Including H and 3C. ) GaN, Si, ZnS, ZnO, A
1N, LiMgO, GaAs, MgAl ₂ O ₄ , InA
It may be lGaN or the like. The semiconductor element 22 is, for example, a gallium nitride (GaN) -based compound semiconductor element,
The composition and structure are not limited as long as they are semiconductor elements formed on the semiconductor element substrate 21. The surface coating layer 26 may be a thermosetting resin such as a polyimide resin or an epoxy resin.

The post 27 includes the surface coating layer 26 and the supporting substrate 2
The post 27 is a columnar member for maintaining a constant distance from the post 4, and the height of each post 27 is substantially the same. The material forming the post 27 is not particularly limited, but a material having good wettability with the adhesive 23 is desirable. Further, since it is formed on the surface coating layer 26, it may be formed of the same material as the surface coating layer 26. The support substrate 24 is a sapphire substrate, a quartz substrate, a metal plate, or the like, and is selected according to the application, but it is desirable that the support substrate 24 has good adhesiveness with the adhesive 23 and good surface flatness.

Next, the semiconductor growth substrate 21 and the support substrate 24
The step of adhering will be described in detail below with reference to FIG. FIG. 5A shows a sapphire substrate, which is a semiconductor growth substrate 21, on a metalorganic chemical vapor deposition (MOCVD) method.
(MOVPE) method for GaN-based semiconductor element 22
It is a schematic sectional drawing which shows the state which formed. In FIG. 5A, the shape of the semiconductor element 22 is expressed as a rectangular parallelepiped shape for simplification, but the semiconductor element 22 may be formed in a cylindrical shape, a conical shape, a hexagonal pyramid shape, or the like.

Next, as shown in FIG. 5B, on the surface (bonding surface) of the semiconductor growth substrate 21 on which the semiconductor element 22 is formed,
A polyimide resin is applied by spin coating, heat treatment is performed to solidify the polyimide resin, and the surface coating layer 26 is formed. At this time, a resin such as an epoxy resin may be used instead of the polyimide resin.

Next, as shown in FIG. 5C, a photosensitive resin layer 28 is laminated on the surface coating layer 26. Photosensitive resin layer 2
8 is photosensitive polyimide or photosensitive epoxy resin, and is laminated by spin coating and baking. After that, a predetermined region is selectively exposed to light by a photolithography technique to be cured, and the uncured partial portion of the photosensitive resin layer 28 is removed to form a surface on the surface coating layer 26 as shown in FIG. 5D. A plurality of posts 27 are formed.

Next, as shown in FIG. 5E, the adhesive 23 is applied on the surface coating layer 26. Simply applying the adhesive 23 does not necessarily cover the entire surface of the surface coating layer 26 because the adhesive has a convex shape due to the surface tension of the adhesive 23. After that, as shown in FIG. 5F, the sapphire substrate which is the supporting substrate 24 is attached to the adhesive 23 and the post 2.
Place on 7. At this time, by pressing the adhesive 23 with the support substrate 24, the adhesive 23 spreads between the surface of the support substrate 24 and the surface of the surface coating layer 26, and the entire adhesive surface of the support substrate 24 and the surface coating layer 26 is filled. To be done. When the adhesive 23 hardens, the substrate surface having the protrusions as shown in FIG. 4 and the supporting substrate are bonded.

The adhesive 23 is applied by applying the adhesive 23 after forming the surface coating layer 26 on the surface of the semiconductor growth substrate 21 on which the semiconductor element 22 is formed and the convex portion is present.
It is possible to prevent the occurrence of voids, which are defective in turning around. Further, since the semiconductor growth substrate 21 and the support substrate 24 are adhered by the adhesive 23 via the posts 27 which are columnar members having substantially the same height, the film thickness of the adhesive 23 is made uniform. You can

Immediately after the formation of the post 27 shown in FIG. 5D is completed, the outer shape of the post 27 has angular corners as shown in FIG. 6A. Therefore, by heating the entire semiconductor growth substrate 21, the post 27 may be heat-treated to be transformed into a columnar member with rounded corners shown in FIG. 6B. It is considered that the rounded corner portions can suppress the generation of voids, which are defective in wraparound of the adhesive 23.

Considering the case where a via hole reaching the semiconductor element 22 is formed in the surface coating layer 26 in a later step, the post 27 is formed at a position where it does not overlap the region where the semiconductor element 22 is formed. Is desirable. Alternatively, when the post 27 is formed at a position overlapping the region where the semiconductor element 22 is formed, the semiconductor element 22 may be an ineffective region that is not used.

Alternatively, the post 27 may be formed of a transparent material at a position overlapping the region where the semiconductor element 22 is formed. When the semiconductor element 22 is a light emitting element and the light transmittance of the adhesive 23 is low, the surface coating layer 26
Although the light emission efficiency via the
By forming the post 27 with a material having a light transmittance higher than that of the adhesive 23, at a position overlapping the region where 2 is formed,
Since light is transmitted through the post 27, it is possible to improve the light emission efficiency. In addition, adhesive 2
By using 3 as a material having a low light transmittance, it is possible to display a blackened image when the semiconductor element 22 does not emit light.

As shown in FIG. 7, the support substrate 24 is placed on the posts 27 and the adhesive 23, and a hard and flat plate such as a metal plate or a quartz plate is formed before the adhesive 23 is cured. It is also possible to apply pressure to the semiconductor growth substrate 21 and the support substrate 24 by using the pressure plates 29 and 30 which are At this time, the semiconductor growth substrate 21 and the supporting substrate 2 which are bonded by the adhesive 23 via the surface coating layer 26 and the posts 27.
4 is held by the pressure plates 29 and 30, and the pressure plate 2
The pressure applied to 9, 30 is a uniform pressure on the entire surfaces of the semiconductor growth substrate 21 and the support substrate 24.

Since uniform pressure is applied to the entire surfaces of the semiconductor growth substrate 21 and the support substrate 24, even when the semiconductor growth substrate 21 or the support substrate 24 is warped or undulated, the adhesive agent is used. It is possible to make the film thickness of 23 uniform. The cause of the warp or waviness of the semiconductor growth substrate 21 or the support substrate 24 is the polishing accuracy of the semiconductor growth substrate 21 or the support substrate 24 itself, the semiconductor element 22 formed on the semiconductor growth substrate 21, and the semiconductor growth substrate 21. Mismatch of crystal lattice, semiconductor growth substrate 21
The difference in the thermal expansion coefficient between the semiconductor element 22 and the semiconductor growth substrate 21 formed above, the semiconductor growth substrate 21 and the surface coating layer 2
The difference in thermal expansion coefficient from No. 6 and the like can be mentioned. Since the film thickness of the adhesive 23 is uniform when the substrates are bonded together, the effect of improving the processing accuracy in the subsequent process can be expected.
Further, it is possible to expect an effect that a pitch shift is less likely to occur in the arrangement of the semiconductor elements 22.

Further, similarly to the first embodiment, at the stage of FIG. 5 (b) where the formation of the surface coating layer 6 is completed, the surface of the surface coating layer 26 is activated to activate the adhesive 23. You may perform surface treatment which improves the wettability with. Examples of the surface treatment include oxygen plasma ashing, argon plasma treatment, acid treatment, and alkali treatment.
It can be appropriately selected depending on the material of the surface coating layer 26 and the type of the adhesive 23. By applying the adhesive 23 after the surface treatment of the surface of the surface coating layer 26, the adhesive 2
3 in the process of diffusing on the surface coating layer 26
It is possible to suppress the inclusion of bubbles in 3 and the generation of voids.

Further, as in the first embodiment, when the support substrate 24 is placed on the adhesive 23, the support substrate 24
It is possible to preliminarily partially dispose the adhesive 23 on the adhesive surface side. The state in which the adhesive 23 is applied to the central portion of the adhesion surface of the support substrate 24 is the same as that shown in FIG. When the adhesive 23 on the surface coating layer 26 has a convex shape due to the surface tension, the central portion of the adhesive surface of the support substrate 24 and the adhesive 23 on the surface coating layer 26 come into contact with each other first. By pre-applying the adhesive 23 to the central portion of the adhesive surface of the adhesive 24, air bubbles are mixed into the adhesive 23 and a void is generated at the time of the first contact between the adhesive 23 and the support substrate 24. Can be prevented.

In addition to the central portion of the adhesive surface of the support substrate 24,
The state in which the adhesive 3 is applied in advance to the four outer edge portions of the adhesive surface is the same as that shown in FIG. 3B. By applying the adhesive 23 also to the outer edge portion, the supporting substrate 24
Even when the adhesive 23 spreads in a certain direction when the adhesive 23 is spread on the surface coating layer 26 by pressing the adhesive 23 with the adhesive 23, the adhesive 23 applied to the outer edge portion is temporarily removed. The expansion of the adhesive 23 is suppressed, and the adhesive 2 in the other direction
The effect of promoting the expansion of 3 is obtained. As a result, it is possible to prevent the adhesive 23 from spreading only in a certain direction and failing to fill the adhesive 23.
It is thought that the coating can be performed. Here, the case where the adhesive 23 is applied to four places at equal intervals is shown.
The same effect can be obtained by applying the adhesive 23 at three or more locations at equal intervals, and the application position and the number of application points are not limited.

[Third Embodiment] Further, another embodiment of the substrate bonding method of the present invention will be described in detail below with reference to the drawings. FIG. 8 shows an embodiment of the present invention in which a plurality of semiconductor elements 42 are formed on a semiconductor growth substrate 41, and a surface of the semiconductor growth substrate 41 on which the semiconductor elements 42 are formed and a support substrate 44 are bonded by an adhesive 43. The typical sectional drawing of a state is shown.

A plurality of semiconductor elements 42 are formed on the semiconductor element substrate 41, and the semiconductor element 4 of the semiconductor growth substrate 41 is formed.
The surface (bonding surface) on the side where 2 is formed is coated with a surface coating layer 46 so as to cover the semiconductor element 42.
A plurality of posts 47 are formed on the surface of the surface coating layer 46, and the support substrate 44 and the surface coating layer 46 are interposed via the posts 47.
And are attached by an adhesive 43. Further, an adhesive film 52 is attached to the surface of the support substrate opposite to the attachment surface. Adhesive film 51, 52
Has a larger bonding surface area than the semiconductor element substrate 41 and the support substrate 44, respectively, and is in a state in which a certain amount of surplus portion protrudes to the side of the semiconductor element substrate 41 and the support substrate 44. Further, the adhesive 43 fills a gap portion generated by the post 47 interposed between the support substrate 44 and the surface coating layer 46.

Here, as the semiconductor element substrate 41, for example, a sapphire (including Al ₂ O ₃ , A surface, R surface, and C surface) substrate is used, but it is suitable for forming the semiconductor element 42 on the surface. Any material can be used, such as SiC (6H, 4
Including H and 3C. ) GaN, Si, ZnS, ZnO, A
1N, LiMgO, GaAs, MgAl ₂ O ₄ , InA
It may be lGaN or the like. The semiconductor element 42 is, for example, a gallium nitride (GaN) -based compound semiconductor element,
The composition and structure are not limited as long as they are semiconductor elements formed on the semiconductor element substrate 41. The surface coating layer 46 may be a thermosetting resin such as a polyimide resin or an epoxy resin.

The post 47 includes the surface coating layer 46 and the supporting substrate 4.
4 is a columnar member for maintaining a constant distance from each other, and the height of each post 47 is substantially the same. The material forming the post 47 is not particularly limited, but a material having good wettability with the adhesive 43 is desirable. Further, since it is formed on the surface coating layer 46, it may be formed of the same material as the surface coating layer 46. The support substrate 44 is a sapphire substrate, a quartz substrate, a metal plate, or the like, and is selected according to the application, but it is desirable that the support substrate 44 has good adhesiveness with the adhesive 43 and surface flatness.

The adhesive film 52 is a polyimide-based film coated with a silicone adhesive or a PET (Polyethylene Terep) coated with an acrylic adhesive.
It is composed of a multi-layer structure of an adhesive and a film, such as a film.

Next, the semiconductor growth substrate 41 and the support substrate 44.
The step of adhering is described in detail below with reference to FIG. FIG. 9A shows a sapphire substrate, which is a semiconductor growth substrate 41, on a metal organic chemical vapor deposition (MOCVD) method.
(MOVPE) method using GaN-based semiconductor element 42
It is a schematic sectional drawing which shows the state which formed. In FIG. 9A, the shape of the semiconductor element 42 is expressed as a rectangular parallelepiped shape for simplification, but the semiconductor element 42 may be formed in a shape such as a columnar shape, a conical shape, or a hexagonal pyramid shape.

Next, as shown in FIG. 9B, on the surface (bonding surface) of the semiconductor growth substrate 41 on which the semiconductor element 42 is formed,
A polyimide resin is applied by spin coating, heat treatment is performed to solidify the polyimide resin, and the surface coating layer 46 is formed. At this time, a resin such as an epoxy resin may be used instead of the polyimide resin.

Next, as shown in FIG. 9C, a photosensitive resin layer 48 is laminated on the surface coating layer 46. Photosensitive resin layer 4
8 is photosensitive polyimide or photosensitive epoxy resin, and is laminated by spin coating and baking. After that, a predetermined region is selectively exposed to light by a photolithography technique to be cured, and the uncured partial portion of the photosensitive resin layer 48 is removed to form a surface coating layer 46 on the surface coating layer 46 as shown in FIG. 9D. A plurality of posts 47 are formed.

Next, as shown in FIG. 9E, the adhesive 43 is applied on the surface coating layer 46. Even if only the adhesive 43 is applied, the adhesive becomes convex due to the surface tension of the adhesive 43 and does not necessarily cover the entire surface of the surface coating layer 46. The amount of the adhesive 43 applied at this time is set to be larger than the volume determined by the areas of the adhesive surfaces of the posts 47 and the surface coating layer 46, so that the adhesive 43 is applied.
Can be formed so as to cover the entire surface of the surface coating layer 46.

After that, as shown in FIG. 9F, on the surface opposite to the bonding surface of the sapphire substrate which is the supporting substrate 44,
The adhesive film 52 is attached. Thereafter, as shown in FIG. 9G, the support substrate 44 having the adhesive film 52 attached to the side opposite to the adhesive surface is placed on the adhesive 43 and the post 47. At this time, by pressing the adhesive 43 with the supporting substrate 44, the adhesive 43 spreads between the surface of the supporting substrate 44 and the surface of the surface coating layer 46, and the entire bonding surface of the supporting substrate 44 and the surface coating layer 46 is filled. To be done. When the adhesive 43 is cured, the surface of the substrate having the convex portion as shown in FIG. 8 and the supporting substrate are bonded.

After that, as shown in FIG. 10, a support substrate 44 to which an adhesive film 52 is attached is placed on the adhesive 43 and the posts 47, and a pressure plate which is a hard and flat plate such as a metal plate or a quartz plate. Using 49 and 50, the support substrate 44 is pressed from above the semiconductor growth substrate 41 and the adhesive film 52. At this time, the pressure applied to the pressure plates 49 and 50 is uniform on the entire surfaces of the semiconductor growth substrate 41 and the support substrate 44.

In FIG. 11, the adhesive film 52 is attached to the supporting substrate 44.
The partially enlarged view when it is pasted on is shown. Adhesive film 5
Since 2 has a multi-layered structure composed of the adhesive 53 and the film 54, if a minute adhered matter 55 such as dust or metal powder is present between the adhesive film 52 and the support substrate 44, it is attached. The kimono 55 is buried in the layer of the adhesive 53.
Therefore, using the pressure plates 49 and 50, the adhesive film 5
2) When pressure is applied from above, it is possible to prevent the pressure from concentrating on the periphery of the adhered substance, and to apply uniform pressure to the entire surface.
The semiconductor growth substrate 4 so that the adhesive 43 has a uniform film thickness.
1 and the support substrate 44 can be bonded. Here, the case where the adhesive film is attached to the side opposite to the adhesive surface of the support substrate 44 is shown, but the same effect can be obtained even if the adhesive film is attached to the side opposite to the adhesive surface of the semiconductor growth substrate 41. Can be expected.

Immediately after the formation of the post 47 shown in FIG. 9D is completed, the outer shape of the post 47 has angular corners similar to that shown in FIG. 6A. Therefore, by heating the entire semiconductor growth substrate 41, the post 4
The heat treatment of No. 7 may be performed to transform the columnar member shown in FIG. 6 (b) into a rounded columnar member. It is considered that the rounded corner portions can suppress the generation of voids, which are poor wraparound of the adhesive 43.

Considering the case where a via hole reaching the semiconductor element 42 is formed in the surface coating layer 46 in a later step, the position for forming the post 47 is a position not overlapping the region where the semiconductor element 42 is formed. Is desirable. Alternatively, when the post 47 is formed at a position overlapping the region where the semiconductor element 62 is formed, the semiconductor element 42 may be an ineffective region that is not used.

Alternatively, the post 47 may be formed of a transparent material at a position overlapping the region where the semiconductor element 42 is formed. When the semiconductor element 42 is a light emitting element and the light transmittance of the adhesive 43 is low, the surface coating layer 46
Although the light emission efficiency via the
By forming the post 47 with a material having a light transmittance higher than that of the adhesive 43, at a position overlapping the region where 2 is formed,
Since light is transmitted through the post 47, it is possible to improve the light emission efficiency. Also, the adhesive 4
By using 3 as a material having a low light transmittance, it is possible to display a blackened image when the semiconductor element 42 does not emit light.

Further, as shown in FIG. 10, the support substrate 44 is disposed on the post 47 and the adhesive 43, and the adhesive 43
It is also possible to apply pressure to the semiconductor growth substrate 41 and the support substrate 44 by using the pressure plates 49 and 50 which are hard and flat plates such as metal plates and quartz plates before they are cured.
At this time, the semiconductor growth substrate 41 and the supporting substrate 44, which are bonded by the adhesive 43 via the surface coating layer 46 and the posts 47, are held by the pressure plates 49 and 50, and the pressure applied to the pressure plates 49 and 50 is held. Is uniformly applied to the entire surfaces of the semiconductor growth substrate 41 and the support substrate 44.

Since uniform pressure is applied to the entire surfaces of the semiconductor growth substrate 41 and the support substrate 44, even if the semiconductor growth substrate 41 or the support substrate 44 is warped or undulated, the adhesive agent It is possible to make the film thickness of 43 uniform. The cause of the warp or waviness of the semiconductor growth substrate 41 or the support substrate 64 is the polishing accuracy of the semiconductor growth substrate 41 or the support substrate 44 itself, or the semiconductor element 42 formed on the semiconductor growth substrate 41 and the semiconductor growth substrate 41. Mismatch of crystal lattice, semiconductor growth substrate 41
Difference in coefficient of thermal expansion between the semiconductor element 42 and the semiconductor growth substrate 41 formed above, the semiconductor growth substrate 41 and the surface coating layer 4
The difference in thermal expansion coefficient from No. 6 and the like can be mentioned. Since the adhesive 43 has a uniform film thickness when the substrates are bonded together, the effect of improving the processing accuracy in the subsequent process can be expected.
In addition, it is possible to expect an effect that a pitch shift is less likely to occur in the arrangement of the semiconductor elements 42.

Further, at the stage of FIG. 9B after the formation of the surface coating layer 46, the surface of the surface coating layer 46 is activated to improve the wettability with the adhesive 43. You may give surface treatment. Examples of the surface treatment include oxygen plasma ashing, argon plasma treatment, acid treatment, and alkali treatment, which can be appropriately selected according to the material of the surface coating layer 46 and the type of the adhesive 43. By applying the adhesive agent 43 after the surface treatment of the surface of the surface coating layer 46, air bubbles are mixed into the adhesive agent 43 and voids are generated in the process of the adhesive agent 43 diffusing on the surface coating layer 46. Can be suppressed.

Further, when disposing the support substrate 44 on the adhesive 43, it is possible to partially dispose the adhesive 43 in advance on the adhesive surface side of the support substrate 44. Support substrate 4
The state where the adhesive 3 is applied to the central portion of the adhesive surface of
It is similar to that shown in (a). When the adhesive 43 on the surface coating layer 46 has a convex shape due to surface tension, the central portion of the adhesive surface of the support substrate 44 and the surface coating layer 46.
Since the upper adhesive 43 comes into contact first, the adhesive 43 is applied in advance to the central portion of the adhesive surface of the support substrate 44, so that the adhesive 43 and the support substrate 44 are contacted at the first contact.
It is possible to prevent bubbles from being mixed into the adhesive 43 and generation of voids.

The state in which the adhesive 3 is pre-applied to the four outer edge portions of the adhesive surface in addition to the central portion of the adhesive surface of the support substrate 4 is the same as that shown in FIG. 3 (b). By applying the adhesive 43 to the outer edge portion as well, the supporting substrate 44
Even when the adhesive 43 spreads in a certain direction when the adhesive 43 is spread on the surface coating layer 46 by pressing the adhesive 43 with the adhesive 43, the adhesive 43 applied to the outer edge portion is temporarily The expansion of the adhesive 43 is suppressed, and the adhesive 4 in the other direction
The effect of promoting the expansion of 3 is obtained. As a result, it is possible to prevent the adhesive 43 from spreading only in a certain direction and failing to fill the adhesive 43, so that the adhesive 43 having a uniform film thickness is formed.
It is thought that the coating can be performed. Here, the case where the adhesive 43 is applied to four places at equal intervals is shown.
The same effect can be obtained by applying the adhesive 43 at three or more locations at equal intervals, and the application position and the number of application points are not limited.

[Fourth Embodiment] Further, another embodiment of the substrate bonding method of the present invention will be described in detail below with reference to the drawings. FIG. 12 shows, as an embodiment of the present invention, a plurality of semiconductor elements 62 formed on a semiconductor growth substrate 61, and a surface of the semiconductor growth substrate 61 on which the semiconductor elements 62 are formed and a support substrate 64 are bonded by an adhesive 63. The typical sectional drawing of a state is shown.

A plurality of semiconductor elements 62 are formed on the semiconductor element substrate 61, and the semiconductor element 6 of the semiconductor growth substrate 61 is formed.
The surface (bonding surface) on the side where 2 is formed is coated with a surface coating layer 66 so as to cover the semiconductor element 62.
A plurality of posts 67 are formed on the surface of the surface coating layer 66, and the support substrate 64 and the surface coating layer 66 are interposed via the posts 67.
And are attached by an adhesive 63. Further, an adhesive film 71 is attached to the surface of the semiconductor growth substrate 61 opposite to the attaching surface, and an adhesive film 72 is attached to the surface of the supporting substrate opposite to the attaching surface. The adhesive films 71 and 72 have a larger bonding surface area than the semiconductor element substrate 61 and the support substrate 64, respectively, and are in a state where a certain amount of surplus portion protrudes to the side of the semiconductor element substrate 61 and the support substrate 64. There is. Further, the adhesive 63 fills a gap portion generated by the post 67 interposed between the support substrate 64 and the surface coating layer 66. In addition, the adhesive 63 spilled around the side surfaces of the semiconductor element substrate 61, the support substrate 64, and the surface coating layer 66 is
It is held by the surplus portions of the adhesive films 71 and 72.

Here, as the semiconductor element substrate 61, for example, a sapphire (including Al ₂ O ₃ , A surface, R surface, and C surface) substrate is used, but it is suitable for forming the semiconductor element 62 on the surface. Any material can be used, such as SiC (6H, 4
Including H and 3C. ) GaN, Si, ZnS, ZnO, A
1N, LiMgO, GaAs, MgAl ₂ O ₄ , InA
It may be lGaN or the like. The semiconductor element 62 is, for example, a gallium nitride (GaN) -based compound semiconductor element,
The composition and structure are not limited as long as they are semiconductor elements formed on the semiconductor element substrate 61. The surface coating layer 66 may be, for example, a thermosetting resin such as a polyimide resin or an epoxy resin.

The post 67 includes the surface coating layer 66 and the supporting substrate 6.
4 is a columnar member for maintaining a constant distance from each other, and the height of each post 67 is substantially the same. The material forming the post 67 is not particularly limited, but a material having good wettability with the adhesive 63 is desirable. Further, since it is formed on the surface coating layer 66, it may be formed of the same material as the surface coating layer 66. The supporting substrate 64 is a sapphire substrate, a quartz substrate, a metal plate, or the like, and is selected according to the application, but it is desirable that the supporting substrate 64 has good adhesiveness with the adhesive 63 and good surface flatness.

The adhesive films 71 and 72 are made of a polyimide-based film coated with a silicone adhesive or a PET (Polyethylene Tenes) coated with an acrylic adhesive.
It is composed of a multilayer structure including an adhesive and a film, such as a rephthalate film.

Next, the semiconductor growth substrate 61 and the support substrate 64.
The step of adhering will be described in detail below with reference to FIG. FIG. 13A shows a sapphire substrate, which is a semiconductor growth substrate 61, on a metal organic compound vapor phase epitaxy method (MOC).
It is a schematic sectional drawing which shows the state which formed the GaN-based semiconductor element 62 using VD (MOVPE) method. FIG.
In (a), the shape of the semiconductor element 62 is expressed as a rectangular parallelepiped shape for simplification.
The semiconductor element 62 may be formed in a shape such as a hexagonal pyramid shape.

Next, as shown in FIG. 13B, the surface of the semiconductor growth substrate 61 on which the semiconductor element 62 is formed (bonding surface).
Then, apply a polyimide resin by spin coating,
A heat treatment is performed to solidify the polyimide resin to form the surface coating layer 66. At this time, a resin such as an epoxy resin may be used instead of the polyimide resin.

Next, as shown in FIG. 13C, a photosensitive resin layer 68 is laminated on the surface coating layer 66. The photosensitive resin layer 68 is made of photosensitive polyimide or photosensitive epoxy resin,
Lamination is done by spin coating and baking. After that, a predetermined region is selectively exposed to light by a photolithography technique to be cured, and the uncured partial portion of the photosensitive resin layer 68 is removed, so that the surface coating layer 66 is formed on the surface coating layer 66 as shown in FIG. 13D. A plurality of posts 67 are formed.

Next, as shown in FIG. 13E, an adhesive 63 is applied on the surface coating layer 66. Simply applying the adhesive 63 does not necessarily cover the entire surface of the surface coating layer 66, because the adhesive 63 has a convex shape due to the surface tension of the adhesive 63. The amount of adhesive 63 applied at this time is
By setting the volume larger than the volume determined by the area of the adhesive surface of the post 67 and the surface coating layer 66, the adhesive 6
3 can be formed so as to cover the entire surface of the surface coating layer 66.

After that, as shown in FIG. 13F, the adhesive film 7 is formed on the surface of the semiconductor growth substrate 61 on the side opposite to the adhesion surface.
1 is attached, and the adhesive film 72 is attached to the surface of the sapphire substrate that is the support substrate 64 on the opposite side to the adhesive surface.
At this time, as shown in FIG.
The area 72 of the attachment surface is larger than that of the semiconductor growth substrate 61 and the support substrate 64, and when the area 72 is attached to the semiconductor growth substrate 61 and the support substrate 64, a certain amount of excess portion is projected.

As shown in FIG. 14, the support substrate 64 to which the adhesive film 72 is attached is attached to the adhesive 63 and the posts 6.
7, pressure plates 69 and 70, which are hard and flat plates such as metal plates and quartz plates, are used to form an adhesive film 71,
The semiconductor growth substrate 61 and the support substrate 64 are pressed from above 72. At this time, the semiconductor growth substrate 61 and the support substrate 64, which are adhered by the adhesive 63 via the surface coating layer 66 and the post 67, are held by the pressure plates 69, 70 via the adhesive films 71, 72, and the pressure plate The pressure applied to 69 and 70 is uniform pressure on the entire surfaces of the semiconductor growth substrate 61 and the support substrate 64.

The amount of the adhesive 63 applied is equal to that of the post 67.
Since the volume is larger than the volume determined by the area of the adhesive surface of the surface coating layer 66 and the supporting substrate 64 and the surface coating layer 66.
The adhesive 63 that does not fit in the gap portion between and wraps around the side surfaces of the semiconductor growth substrate 61, the support substrate 64, and the surface coating layer 66. At this time, since the surplus portions of the adhesive films 71 and 72 extend to the sides of the semiconductor growth substrate 61 and the support substrate 64, the adhesive 63 causes the adhesive films 71 and 72 to move as shown in FIG. It is held by 72, and the surface tension of the adhesive 63 works to prevent the adhesive 63 from flowing out.

When the inventor of the present invention has carried out the steps described above, the semiconductor growth substrate 61 having a diameter of 2 inches and the supporting substrate 62 are arranged so that the distance between the surface of the surface coating layer 66 and the surface of the supporting substrate 64 is 10 μm. When they were held by the post 67 and adhered, the layer thickness of the adhesive 63 had an error of 1.0 to 1.
It was about 5 μm.

When the adhesive film 71 is attached to the semiconductor growth substrate 61 in the same manner as shown in FIG. 11 in the third embodiment, the adhesive film 71 has a multi-layer structure composed of the adhesive 73 and the film 74. Therefore, if a minute deposit 75 such as dust or metal powder is present between the adhesive film 71 and the semiconductor growth substrate 61, the deposit 75 is buried in the layer of the adhesive 73. Adhesive film 72
The same effect can be expected between the support substrate 64 and the substrate. Therefore, using the pressure plates 69 and 70, the adhesive film 7
When pressure is applied from above 1, 72, it is possible to prevent the pressure from concentrating on the periphery of the adhered matter, so that uniform pressure is applied to the entire surface so that the adhesive 63 has a uniform film thickness. It is possible to bond the semiconductor growth substrate 61 and the support substrate 64.

The adhesive 63 squeezed around the side surfaces of the semiconductor growth substrate 61, the support substrate 64, and the surface coating layer 66 is held and held by the surplus portions of the adhesive films 71 and 72. It is possible to prevent the adhesive 63 from flowing out from between the surface coating layer 66 and the occurrence of voids in which the adhesive 63 is absent in the gap portion between the support substrate 64 and the surface coating layer 66.

In addition, the semiconductor growth substrate 61 and the support substrate 64
If the adhesive 63 wraps around the surface on the side opposite to the adhesive surface, the processing accuracy at the time of peeling the substrate or at the time of photolithography in the subsequent process is deteriorated. However, the semiconductor growth substrate 6
Since the adhesive films 71 and 72 are attached on the entire surface of the semiconductor growth substrate 61 and the support substrate 64 on the opposite side to the adhesion surface of the semiconductor growth substrate 61 and the support substrate 64, respectively. It is possible to prevent the adhesive 63 from turning around on the surface.

Immediately after the formation of the post 67 shown in FIG. 13D is completed, the outer shape of the post 67 is as shown in FIG. 6A.
The corners are angular as shown in. Therefore, by heating the entire semiconductor growth substrate 61, the post 67 may be heat-treated to be transformed into a columnar member with rounded corners shown in FIG. 6B. It is considered that since the corner portions are rounded, it is possible to suppress the occurrence of voids, which are defective in wraparound of the adhesive 63.

Considering the case where a via hole reaching the semiconductor element 62 in a later step is formed in the surface coating layer 66, the position where the post 67 is formed is a position which does not overlap the region where the semiconductor element 62 is formed. Is desirable. Alternatively, when the post 67 is formed at a position overlapping the region where the semiconductor element 62 is formed, the semiconductor element 62 may be an ineffective region that is not used.

Alternatively, the post 67 may be formed of a transparent material at a position overlapping the region where the semiconductor element 62 is formed. When the semiconductor element 62 is a light emitting element and the light transmittance of the adhesive 63 is low, the surface coating layer 66
Although the light emission efficiency via the
By forming the post 67 at a position overlapping the region where 2 is formed with a material having a higher light transmittance than the adhesive 63,
Since light is transmitted through the post 67, it is possible to improve the light emission efficiency. In addition, the adhesive 6
By using 3 as a material having a low light transmittance, it is possible to perform a blackened display when the semiconductor element 62 does not emit light.

Further, as shown in FIG. 14, the support substrate 64 is disposed on the post 67 and the adhesive 63, and the adhesive 63
It is also possible to apply pressure to the semiconductor growth substrate 61 and the support substrate 64 by using the pressure plates 69 and 70 which are hard and flat plates such as a metal plate and a quartz plate before the resin is cured.
At this time, the semiconductor growth substrate 61 and the support substrate 64, which are bonded by the adhesive 63 via the surface coating layer 66 and the posts 67, are held by the pressure plates 69 and 70, and the pressure applied to the pressure plates 69 and 70 is held. Is uniformly applied to the entire surfaces of the semiconductor growth substrate 61 and the support substrate 64.

Since uniform pressure is applied to the entire surfaces of the semiconductor growth substrate 61 and the support substrate 64, the adhesive agent can be used even when the warp or waviness of the substrate occurs in the semiconductor growth substrate 61 or the support substrate 64. It is possible to make the film thickness of 63 uniform. The cause of the warp or waviness of the semiconductor growth substrate 61 or the support substrate 64 is the polishing accuracy of the semiconductor growth substrate 61 or the support substrate 64 itself, and the semiconductor element 62 and the semiconductor growth substrate 61 formed on the semiconductor growth substrate 61. Crystal lattice mismatch, semiconductor growth substrate 61
Difference in coefficient of thermal expansion between the semiconductor element 62 and the semiconductor growth substrate 61 formed above, the semiconductor growth substrate 61 and the surface coating layer 6
The difference in thermal expansion coefficient from No. 6 and the like can be mentioned. Since the film thickness of the adhesive 63 is uniform when the substrates are bonded together, the effect of improving the processing accuracy in the subsequent process can be expected.
Further, it is possible to expect an effect that a pitch shift is less likely to occur in the arrangement of the semiconductor elements 62.

Further, at the stage of FIG. 13B after the formation of the surface coating layer 66, the surface of the surface coating layer 66 is
A surface treatment that activates the surface and improves wettability with the adhesive 63 may be performed. Examples of the surface treatment include oxygen plasma ashing, argon plasma treatment, acid treatment, and alkali treatment, which can be appropriately selected depending on the material of the surface coating layer 66 and the type of the adhesive 63.
By applying the adhesive 63 after the surface treatment of the surface of the surface coating layer 66, air bubbles are mixed into the adhesive 63 and voids are generated in the process of the adhesive 63 diffusing on the surface coating layer 66. Can be suppressed.

Further, when disposing the support substrate 64 on the adhesive 63, it is possible to partially dispose the adhesive 63 on the adhesive surface side of the support substrate 64 in advance. Support substrate 4
The state where the adhesive 3 is applied to the central portion of the adhesive surface of
It is similar to that shown in (a). When the adhesive 63 on the surface coating layer 66 has a convex shape due to the surface tension, the central portion of the adhesive surface of the support substrate 64 and the surface coating layer 66.
Since the upper adhesive 63 first contacts, the adhesive 63 is applied in advance to the central portion of the adhesive surface of the supporting substrate 64, so that the adhesive 63 and the supporting substrate 64 are first contacted with each other.
It is possible to prevent bubbles from being mixed into the adhesive 63 and generation of voids.

The state in which the adhesive 3 is applied in advance to the four outer edge portions of the adhesive surface in addition to the central portion of the adhesive surface of the support substrate 4 is the same as that shown in FIG. 3 (b). By applying the adhesive 63 also to the outer edge portion, the supporting substrate 64
Even when the adhesive 63 spreads in a certain direction when the adhesive 63 is spread on the surface coating layer 66 by pressing the adhesive 63 with the adhesive 63, the adhesive 63 applied to the outer edge portion is temporarily The expansion of the adhesive 63 is suppressed, and the adhesive 6 in the other direction
The effect of promoting the expansion of 3 is obtained. As a result, it is possible to prevent the adhesive 63 from spreading only in a certain direction and failing to fill the adhesive 63, and thus the adhesive 63 having a uniform film thickness can be prevented.
It is thought that the coating can be performed. Here, the case where the adhesive 63 is applied to four places at equal intervals is shown.
The same effect can be obtained by applying the adhesive 63 to three or more locations at equal intervals, and the application position and the number of application points are not limited.

[Fifth Embodiment] Further, another embodiment of the substrate bonding method of the present invention will be described below in detail with reference to the drawings. FIG. 15 shows an embodiment of the present invention in which a plurality of semiconductor elements 82 are arranged on a holding substrate 81, and a surface of the holding substrate 81 on which the semiconductor elements 82 are formed and a supporting substrate 84 are adhered by an adhesive 83. The schematic sectional drawing of is shown.

A plurality of semiconductor elements 82 are provided on the holding substrate 81.
And the post 87 is formed on each semiconductor element 82, and the surface (bonding surface) of the holding substrate 81 on the side where the semiconductor element 82 is arranged is a surface coating layer so as to cover the semiconductor element 82. 86 is coated. Since the post 87 projects a certain amount from the surface coating layer 86, the post 87
The supporting substrate 84 and the holding substrate 81 are attached to each other via the adhesive 83 via the adhesive. An adhesive film 91 is attached to the surface of the holding substrate 81 opposite to the attachment surface, and an adhesive film 92 is attached to the surface of the support substrate opposite to the attachment surface. Adhesive film 9
1 and 92 have a larger bonding surface area than the holding substrate 81 and the supporting substrate 84, respectively, and are in a state where a certain amount of surplus portion protrudes to the side of the holding substrate 81 and the supporting substrate 84. Further, the adhesive 83 fills a gap portion generated by the post 87 interposed between the support substrate 84 and the surface coating layer 86. In addition, the adhesive 83 wrapping around the side surfaces of the holding substrate 81, the supporting substrate 84, and the surface coating layer 86 is held by the excess portions of the adhesive films 91 and 92.

Here, as the holding substrate 81, for example, a sapphire (including Al ₂ O ₃ , A surface, R surface, and C surface) substrate is used, and a material suitable for disposing the semiconductor element 82 on the surface. If The semiconductor element 82 is, for example, a gallium nitride (GaN) -based compound semiconductor element. The surface coating layer 86 may be thermosetting resin such as polyimide resin or epoxy resin.

The post 87 includes the surface coating layer 86 and the supporting substrate 8.
The post 87 is a columnar member for electrically connecting to the semiconductor element 82 while keeping a constant distance from the post 4, and the posts 87 have substantially the same height. The material forming the post 87 is a conductive material, and is preferably a metal such as copper (Cu), gold (Au), or aluminum (Al) having a relatively small electric resistance, or a conductive paste. Support substrate 84
Is a sapphire substrate, a quartz substrate, a metal plate, or the like, and is selected according to the application, but it is desirable that the adhesiveness with the adhesive 83 and the flatness of the surface are good.

The adhesive films 91 and 92 are made of a polyimide film coated with a silicone adhesive or a PET (Polyethylene Te) coated with an acrylic adhesive.
It is composed of a multilayer structure including an adhesive and a film, such as a rephthalate film.

Next, the step of adhering the holding substrate 81 and the supporting substrate 84 will be described in detail below with reference to FIG. FIG. 16A is a schematic sectional view showing a state in which a GaN-based semiconductor element 82 is arranged on a sapphire substrate which is a holding substrate 81. In FIG. 16A, the shape of the semiconductor element 82 is expressed as a rectangular parallelepiped shape for simplification, but the semiconductor element 82 may be formed in a cylindrical shape, a conical shape, a hexagonal pyramid shape, or the like.

Next, masking is applied to the position corresponding to the semiconductor element 82, and metal is laminated by sputtering or the like.
As shown in FIG. 16B, the post 87 is formed on each semiconductor element 82.

Next, as shown in FIG. 16C, a polyimide resin is applied by spin coating to the surface (bonding surface) of the holding substrate 81 on which the semiconductor element 82 is arranged, and heat treatment is performed to remove the polyimide resin. Solidification is performed, and the surface coating layer 86
To form. At this time, a resin such as an epoxy resin may be used instead of the polyimide resin. The layer thickness of the surface coating layer 86 is set to such an extent that the post 87 projects a certain amount from the surface of the surface coating layer 86. Here, the surface coating layer 86 is formed after the post 87 is formed. However, after the surface coating layer 86 is formed on the adhesive surface, a via is opened at a position corresponding to the semiconductor element 82 of the surface coating layer 86 to stack metal. Then, the post 87 may be formed. Further, the substance forming the post 87 may be a material that is selectively removed with respect to the adhesive 83. This means that it is possible to remove the support substrate 84 after adhering the holding substrate 81 and the support substrate 84, and thereafter to remove the post 87 while leaving the adhesive 83. Examples of the method for selectively removing the post 87 include dry etching, organic solvent dissolution, and wet etching, which are appropriately determined depending on the materials forming the adhesive 83 and the post 87. By selectively removing the post 87, a via reaching the semiconductor element 82 is formed, so that it is possible to easily form a via for forming an electrode of the semiconductor element 82.

Next, as shown in FIG. 16E, the adhesive 83 is applied on the surface coating layer 86. If only the adhesive 83 is applied, the adhesive will have a convex shape due to the surface tension of the adhesive 83, and the entire surface of the surface coating layer 86 is not necessarily covered. The amount of adhesive 83 applied at this time is
The volume is set larger than the volume determined by the areas of the bonding surfaces of the post 87 and the surface coating layer 86.

After that, as shown in FIG. 16F, an adhesive film 91 is attached to the surface of the holding substrate 81 opposite to the adhesive surface, and the surface of the supporting substrate 84 opposite to the adhesive surface of the sapphire substrate is attached. Then, the adhesive film 92 is attached. At this time, as shown in FIG.
When the area of the sticking surface is made larger than that of the holding substrate 81 and the supporting substrate 84, and the sticking is performed on the holding substrate 81 and the supporting substrate 84, a certain amount of surplus portion is projected.

As shown in FIG. 14, the supporting substrate 84 to which the adhesive film 92 is attached is attached to the adhesive 83 and the post 8
The pressure sensitive adhesive plates 91, 90, which are hard and flat plates such as metal plates and quartz plates, are arranged on the pressure sensitive adhesive film 91,
The holding substrate 81 and the supporting substrate 84 are pressed from above 92. At this time, the holding substrate 81 and the supporting substrate 8 which are adhered by the adhesive 83 via the surface coating layer 86 and the post 87.
4 is a pressure plate 89, via adhesive films 91, 92.
The pressure held by 90 and applied to the pressure plates 89 and 90 is uniform pressure on the entire surfaces of the holding substrate 81 and the supporting substrate 84.

The amount of the adhesive 83 applied is equal to that of the post 87.
And the volume larger than the volume determined by the area of the adhesive surface of the surface coating layer 86, the supporting substrate 84 and the surface coating layer 86.
The adhesive 83 that does not fit in the gap between
And it goes around to the side surface of the support substrate 84 and the surface coating layer 86. At this time, since the surplus portions of the adhesive films 91 and 92 extend to the side of the holding substrate 81 and the supporting substrate 84, as shown in FIG.
Is held by the adhesive films 91 and 92, and the adhesive 8
The surface tension of 3 acts to prevent the adhesive 83 from flowing out.

Through the above steps, the holding substrate 81 and the supporting substrate 82 each having a diameter of 2 inches, and the post 87 are formed so that the distance between the surface of the surface coating layer 86 and the supporting substrate 84 is 10 μm.
When it was held by and adhered, the layer thickness of the adhesive 83 had an error of about 1.0 to 1.5 μm.

The post 87, which is a conductive material, is connected to the semiconductor element 8
2 to form the post 87 on the semiconductor element 8
It can be used as the second electrode. Therefore, it is possible to omit the step of forming a via hole reaching the semiconductor element 82 and filling the metal with metal in order to secure electrical connection with the semiconductor element 82 in a subsequent step.

When the adhesive film 91 is attached to the holding substrate 81, it becomes the same as the partially enlarged view of FIG. Since the adhesive film 91 has a multi-layered structure composed of the adhesive 93 and the film 94, when minute adherents 95 such as dust or metal powder are present between the adhesive film 91 and the holding substrate 81, The deposit 95 is buried in the layer of the adhesive 93. The same effect can be expected between the adhesive film 92 and the support substrate 84. Therefore, when pressure is applied from above the pressure-sensitive adhesive films 91 and 92 using the pressure plates 89 and 90, it is possible to prevent concentration of pressure around the adhered matter,
By uniformly pressing the entire surface, the holding substrate 81 and the supporting substrate 84 can be bonded so that the film thickness of the adhesive 83 becomes uniform.

In addition, by holding the adhesive 83 wrapping around the side surfaces of the holding substrate 81, the supporting substrate 84, and the surface coating layer 86 with the surplus portions of the adhesive films 91, 92, the supporting substrate 84 and the surface of the surface are covered. The adhesive 83 flows out from between the cover layer 86 and the support substrate 84 and the surface cover layer 86.
It is possible to suppress the generation of voids in which the adhesive agent 83 is absent in the gap portion between and.

Further, if the adhesive 83 wraps around the surface opposite to the bonding surface of the holding substrate 81 or the supporting substrate 84,
The processing accuracy at the time of peeling the substrate or at the time of photolithography in the subsequent process is reduced. However, the adhesive film 9 is formed on the surface of the holding substrate 81 and the supporting substrate 84 on the opposite side to the adhesive surface.
Because 1,92 is pasted on the entire surface,
It is possible to prevent the adhesive agent 83 from wrapping around on the opposite surface of the holding substrate 81 and the supporting substrate 84 from the bonding surface.

Further, as shown in FIG. 17, the support substrate 84 is disposed on the post 87 and the adhesive 83, and the adhesive 83
Before the setting of the holding substrate 8 is completed, the pressure plates 89 and 90, which are hard and flat plates such as metal plates and quartz plates, are used until the holding substrate 8 is cured.
It is also possible to pressurize 1 and the support substrate 84. At this time, the adhesive 8 is applied via the surface coating layer 86 and the post 87.
The holding substrate 81 and the supporting substrate 84 which are adhered by 3 are
The pressure plates 89, 90 are supported by the pressure plates 89, 90.
The pressure applied to the holding substrate 81 and the supporting substrate 84
Uniform pressure is applied to the entire surface.

Since uniform pressure is applied to the entire surfaces of the holding substrate 81 and the supporting substrate 84, even if the substrate warps or waviness occurs in the holding substrate 81 or the supporting substrate 84, the adhesive 83 is applied. It is possible to make the film thickness uniform. The reason why the holding substrate 81 or the supporting substrate 84 is warped or waviness is caused by the polishing accuracy of the holding substrate 81 or the supporting substrate 84 itself, or the lack of a crystal lattice between the semiconductor element 82 formed on the holding substrate 81 and the holding substrate 81. Matching, a difference in thermal expansion coefficient between the semiconductor element 82 formed on the holding substrate 81 and the holding substrate 81, a difference in thermal expansion coefficient between the holding substrate 81 and the surface coating layer 86, and the like can be mentioned. Since the film thickness of the adhesive 83 is uniform when the substrates are bonded together,
The effect of improving the processing accuracy in the subsequent process can be expected. In addition, it is possible to expect an effect that a pitch shift is less likely to occur in the arrangement of the semiconductor elements 82.

Further, at the stage of FIG. 16C after the formation of the surface coating layer 86, the surfaces of the surface coating layer 86 and the post 87 are activated to improve the wettability with the adhesive 83. You may give such surface treatment. Examples of the surface treatment include oxygen plasma ashing, argon plasma treatment, acid treatment, and alkali treatment, which can be appropriately selected according to the material of the surface coating layer 86 and the type of the adhesive 83. By applying the adhesive agent 83 after the surface treatment of the surface coating layer 86 and the surface of the post 87, air bubbles are not mixed into the adhesive agent 83 in the process of the adhesive agent 83 diffusing on the surface coating layer 86. Generation of voids can be suppressed.

Further, when disposing the support substrate 84 on the adhesive 83, it is possible to partially dispose the adhesive 83 on the adhesive surface side of the support substrate 84 in advance. Support substrate 4
The state where the adhesive 3 is applied to the central portion of the adhesive surface of
It is similar to that shown in (a). When the adhesive 83 on the surface coating layer 86 has a convex shape due to surface tension, the central portion of the adhesive surface of the support substrate 84 and the surface coating layer 86.
Since the upper adhesive agent 83 first contacts, the adhesive agent 83 is applied to the central portion of the adhesive surface of the support substrate 84 in advance, so that the adhesive agent 83 and the support substrate 84 are first contacted with each other.
It is possible to prevent air bubbles from being mixed in the adhesive agent 83 and generation of voids.

The state in which the adhesive 3 is applied in advance to the four outer edge portions of the adhesive surface in addition to the central portion of the adhesive surface of the support substrate 4 is the same as that shown in FIG. 3 (b). By applying the adhesive 83 also to the outer edge portion, the supporting substrate 84
When the adhesive 83 is spread on the surface coating layer 86 by pressing the adhesive 83 with the adhesive 83 even if the adhesive 83 spreads in a certain direction, the adhesive 83 applied to the outer edge portion is temporarily removed. The expansion of the adhesive 83 is suppressed, and the adhesive 8 in the other direction
The effect of promoting the expansion of 3 is obtained. As a result, it is possible to prevent the adhesive 83 from spreading only in a certain direction and failing to fill the adhesive 83, so that the adhesive 83 with a uniform film thickness is obtained.
It is thought that the coating can be performed. Here, the case where the adhesive 83 is applied to four places at equal intervals is shown.
The same effect can be obtained by applying the adhesive 83 to three or more locations at equal intervals, and the application position and the number of application points are not limited.

[0112]

EFFECTS OF THE INVENTION By applying an adhesive after forming a surface coating layer on a surface of a semiconductor growth substrate on which a semiconductor element is formed and a convex portion is present, a void which is a defective wraparound of the adhesive is generated. Can be prevented.

Further, at the stage where the formation of the surface coating layer was completed, the surface of the surface coating layer was subjected to a surface treatment for improving the wettability with the adhesive, and the surface of the surface coating layer was surface treated. By applying the adhesive later, it is possible to suppress the inclusion of bubbles in the adhesive and the generation of voids in the process of the adhesive diffusing on the surface coating layer.

Furthermore, when the support substrate is placed on the adhesive, the adhesive is partially placed in advance on the adhesive surface side of the support substrate, so that the adhesive 3 and the support substrate 4 are initially contacted with each other. At this time, it is possible to prevent air bubbles from being mixed into the adhesive 3 and generation of voids.

In addition to the central portion of the adhesive surface of the support substrate, the adhesive is applied in advance to the four outer edge portions of the adhesive surface, so that the adhesive is pressed by the support substrate and the adhesive is applied on the surface coating layer. When spreading, even if the adhesive spreads in a certain direction, the adhesive applied to the outer edge part temporarily suppresses the expansion of the adhesive and promotes the expansion of the adhesive in other directions. Is obtained. It is considered that this makes it possible to prevent the adhesive from spreading only in a certain direction and failing to fill the adhesive, and to apply the adhesive with a uniform film thickness.

Further, since the semiconductor growth substrate and the supporting substrate are adhered by the adhesive through the posts which are columnar members having substantially the same height, the film thickness of the adhesive can be made uniform. .

Further, by performing heat treatment after forming the posts, heat treatment of the posts is performed and the posts are transformed into columnar members with rounded corners. It is considered that the rounded corner portions can suppress the generation of voids, which is a poor wraparound of the adhesive.

The support substrate is placed on the posts and the adhesive, and a pressure plate, which is a hard and flat plate such as a metal plate or a quartz plate, is used until the adhesive is hardened. And when the support substrate is pressed, uniform pressure is applied to the entire surfaces of the semiconductor growth substrate and the support substrate.
It is possible to make the film thickness of the adhesive uniform even when the warp or undulation of the substrate occurs in the semiconductor growth substrate or the supporting substrate. Since the film thickness of the adhesive is uniform when the substrates are bonded together, the effect of improving the processing accuracy in the subsequent process can be expected. In addition, it is possible to expect an effect that a pitch shift is less likely to occur in the arrangement of the semiconductor elements.

When an adhesive film is attached to a semiconductor element substrate or a support substrate and pressure is applied, the adhesive film has a multi-layered structure composed of an adhesive and a film, and therefore, is placed between the adhesive film and the semiconductor growth substrate or the adhesive film. When a minute adhered substance or the like is present between the support substrate and the support substrate, the adhered substance is buried in the pressure-sensitive adhesive layer. Therefore, when pressure is applied from above the pressure-sensitive adhesive film using the pressure plate, it is possible to prevent the pressure from concentrating on the periphery of the adhered matter, and to apply uniform pressure on the entire surface to reduce the adhesive film thickness. It is possible to bond the semiconductor growth substrate and the supporting substrate so as to be uniform.

Further, the adhesive wrapping around the side surfaces of the semiconductor growth substrate, the support substrate and the surface coating layer is held and retained by the surplus portion of the adhesive film attached to the semiconductor growth substrate and the support substrate. It is possible to suppress the occurrence of voids in which the adhesive flows out from between the surface coating layer and the surface coating layer and the adhesive is absent in the gap between the supporting substrate and the surface coating layer.

When the posts formed on the semiconductor element are made of a conductive material, the posts can be used as electrodes of the semiconductor element. Therefore, it is possible to omit the step of forming a via hole reaching the semiconductor element and filling the metal in the subsequent step in order to secure electrical connection with the semiconductor element. Further, the post formed on the semiconductor element is made of a material that can be selectively removed with respect to the adhesive, so that the support substrate is removed after the holding substrate and the support substrate are bonded, and the post is selectively removed. You can
Since the via reaching the semiconductor element is formed, the via for forming the electrode of the semiconductor element can be easily formed.

When the post is made of a transparent material at a position overlapping the region where the semiconductor element is formed, light is transmitted through the post, so that the luminous efficiency can be improved. Further, by using a material having a low light transmittance as the adhesive, it is possible to perform blackened display when the semiconductor element does not emit light.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of substrates bonded by a substrate bonding method according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of each step of the substrate bonding method according to the first embodiment.

FIG. 3 is a plan view showing a case where an adhesive is applied to the support substrate side.

FIG. 4 is a schematic cross-sectional view of a substrate bonded by the substrate bonding method according to the second embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view for each step of the substrate bonding method according to the second embodiment.

FIG. 6 is a schematic cross-sectional view showing a case where the post is formed and then heat treatment is performed to deform the corner portions of the post into a round shape in the second embodiment.

FIG. 7 is a schematic cross-sectional view showing a case where pressure is uniformly applied to the entire surface using a pressure plate.

FIG. 8 is a schematic cross-sectional view of a substrate bonded by a substrate bonding method using an adhesive film according to a third embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view of each step of the substrate bonding method using the adhesive film according to the third embodiment.

FIG. 10 is a schematic cross-sectional view showing a case where a pressure plate is used to uniformly apply pressure to the entire surface in the third embodiment.

FIG. 11 is an enlarged cross-sectional view showing a case where an adhered substance is present between the adhesive film and the substrate.

FIG. 12 is a schematic cross-sectional view of a substrate bonded by a substrate bonding method using an adhesive film according to the fourth embodiment of the present invention.

FIG. 13 is a schematic cross-sectional view for each step of the substrate bonding method using the pressure-sensitive adhesive film according to the fourth embodiment.

FIG. 14 is a schematic cross-sectional view showing a case where a pressure plate is used to uniformly apply pressure to the entire surface in the fourth embodiment.

FIG. 15 is a schematic cross-sectional view of a substrate bonded by a substrate bonding method of forming a metal post on a semiconductor device according to a fifth embodiment of the present invention.

FIG. 16 is a schematic cross-sectional view of each step of a substrate bonding method for forming a metal post on a semiconductor device according to a fifth embodiment.

FIG. 17 is a schematic cross-sectional view showing a case where a pressure plate is used to uniformly apply pressure to the entire surface in the fifth embodiment.

FIG. 18 is a schematic cross-sectional view showing the occurrence of voids when an adhesive is applied to the surface of a substrate on which convex portions are present and the substrate is bonded to another substrate.

[Explanation of symbols]

1, 21, 41, 61 Semiconductor growth substrate 81 Holding substrate 2, 22, 42, 62, 82 Semiconductor element 3, 23, 43, 63, 83 Adhesive 24, 44, 64, 84 Support substrate 5 Void 6, 26, 46, 66, 86 Surface coating layer 27, 47, 67, 87 Post 28, 48, 68 Photosensitive resin layer 29, 30, 49, 50, 69, 70, 89, 90
Pressure plate 52, 71, 72, 91, 92 Adhesive film 53, 73, 93 Adhesive 54, 74, 94 Film 55, 75, 95 Adhesion

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) C09J 183/04 C09J 183/04

Claims (30)

[Claims] 1. A surface coating layer is formed on the convex portion of a first substrate having a convex portion formed on the surface thereof, and an adhesive is applied to the surface coating layer to form a second substrate with the adhesive agent. A substrate adhering method, wherein the surface coating layer and the second substrate are adhered to each other by arranging them on an adhesive layer consisting of. 2. The substrate adhering method according to claim 1, wherein the first substrate is a semiconductor growth substrate, and a semiconductor element is formed on the semiconductor growth substrate to form the protrusions. 3. The substrate adhering method according to claim 2, wherein the semiconductor element is a light emitting element. 4. The substrate bonding method according to claim 3, wherein the light emitting device contains gallium nitride. 5. The substrate adhering method according to claim 1, wherein a thermosetting resin is applied onto the convex portions by a spin coating method, and heat treatment is performed to form the surface coating layer. 6. The substrate adhering method according to claim 5, wherein the thermosetting resin is a polyimide resin or an epoxy resin. 7. The substrate adhering method according to claim 1, wherein the surface treatment is applied to the surface coating layer after the surface coating layer is laminated on the convex portion. 8. The method of adhering a substrate according to claim 7, wherein the surface treatment is any one of oxygen plasma ashing treatment, argon plasma treatment, acid treatment and alkali treatment. 9. The substrate adhering method according to claim 1, wherein the adhesive is applied to the adhering surface of the second substrate. 10. The substrate adhering method according to claim 1, wherein the adhesive is applied to a substantially central region of an adhering surface of the second substrate. 11. The adhesive is applied to a plurality of outer edge regions of an adhesive surface of the second substrate.
The substrate bonding method described. 12. A surface coating layer is formed on the convex portion of the first substrate having a convex portion formed on the surface, and a plurality of spacing members are formed on the surface coating layer. An adhesive is applied to the substrate, the second substrate is placed on an adhesive layer made of the adhesive, and the surface coating layer and the second substrate are adhered to each other. 13. The substrate adhering method according to claim 12, wherein the spacing member is formed at a position overlapping the convex portion with a material having a light transmittance higher than that of the adhesive. 14. The substrate adhering method according to claim 13, wherein the adhesive is formed of a material having a low light transmittance. 15. A photosensitive resin layer is laminated on the surface coating layer, and the photosensitive resin layer is selectively exposed and cured to form the spacing member. The substrate bonding method described. 16. The substrate adhering method according to claim 12, wherein the spacing member is heat-treated to blunt the corner portions of the spacing member. 17. After disposing the second substrate on the adhesive layer, the first substrate and the second substrate are separated by 2
The pressure is applied by a single pressure plate.
2. The substrate bonding method according to 2. 18. The substrate adhering method according to claim 12, wherein the first substrate is a semiconductor growth substrate, and a semiconductor element is formed on the semiconductor growth substrate to form the protrusions. 19. A surface coating layer is formed on the convex portion of a first substrate having a convex portion formed on the surface, and a plurality of spacing members are formed on the surface coating layer. An adhesive film composed of a film layer and an adhesive layer is attached to a surface of the substrate or the second substrate opposite to the adhesive surface, and an adhesive is applied to the surface coating layer to form the second substrate. A substrate bonding method, wherein the substrate is arranged on an adhesive layer made of the adhesive, and the surface coating layer and the second substrate are bonded to each other. 20. The substrate adhering method according to claim 19, wherein the film layer is a polyimide film or a PET film, and the adhesive layer is a silicone adhesive material or an acrylic adhesive material. 21. The substrate adhering method according to claim 19, wherein the first substrate and the second substrate are pressed by two pressing plates via the adhesive film. 22. A surface coating layer is formed on the convex portion of a first substrate having a convex portion formed on the surface, and a plurality of spacing members are formed on the surface coating layer. A first adhesive film composed of a film layer and an adhesive layer is attached to the surface of the substrate opposite to the adhesive surface, and a film layer and an adhesive layer are attached to the surface of the second substrate opposite to the adhesive surface. A second pressure-sensitive adhesive film composed of is attached, and the area of the surface of the first pressure-sensitive adhesive film that is bonded to the first substrate is bonded to the first pressure-sensitive adhesive film of the first substrate. The area of the surface of the second adhesive film that is bonded to the second substrate is larger than the area of the surface of the second adhesive film that is bonded to the second adhesive film of the second substrate. Also, an adhesive is applied to the surface coating layer so that the second substrate is made of the adhesive. A substrate adhering method, characterized in that the surface coating layer and the second substrate are adhered to each other on the adhesive layer. 23. The first substrate and the second substrate are pressed by two pressure plates via the first adhesive film and the second adhesive film. 22. The substrate bonding method as described in 22. 24. A spacing member is formed on the semiconductor element of the first substrate having a semiconductor element arranged on the surface thereof, a surface coating layer is formed on the semiconductor element, and an adhesive is applied to the surface coating layer. A substrate bonding method, which comprises applying the second substrate on the adhesive layer made of the adhesive to bond the surface coating layer to the second substrate. 25. The substrate bonding method according to claim 24, wherein the spacing member is formed of a conductive material. 26. The substrate adhering method according to claim 24, wherein the spacing member is formed of a material that can be selectively removed with respect to the adhesive. 27. A first adhesive film composed of a film layer and an adhesive layer is attached to a surface of the first substrate opposite to the adhesive surface, and the opposite side of the second substrate is adhered. A second adhesive film composed of a film layer and an adhesive layer on the surface of the adhesive layer, applying an adhesive to the surface coating layer, disposing a second substrate on the adhesive, 25. The substrate adhering method according to claim 24, wherein the coating layer and the second substrate are adhered to each other. 28. The film layer is a polyimide film or PET (Polyethylene Tere).
28. The method of claim 27, wherein the adhesive layer is a silicone adhesive material or an acrylic adhesive material. 29. The area of the surface of the first adhesive film bonded to the first substrate is larger than the area of the surface of the first substrate bonded to the first adhesive film. The area of the surface of the second adhesive film that is bonded to the second substrate is larger than the area of the surface of the second substrate that is bonded to the second adhesive film. 28. The substrate bonding method according to claim 27. 30. The first substrate and the second substrate are pressed by two pressure plates via the first adhesive film and the second adhesive film. 27. The substrate adhering method according to 27.