TW200307287A - Equi-potential sensing magnetic random access memory (MRAM) with series diodes - Google Patents

Equi-potential sensing magnetic random access memory (MRAM) with series diodes Download PDF

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Publication number
TW200307287A
TW200307287A TW092101140A TW92101140A TW200307287A TW 200307287 A TW200307287 A TW 200307287A TW 092101140 A TW092101140 A TW 092101140A TW 92101140 A TW92101140 A TW 92101140A TW 200307287 A TW200307287 A TW 200307287A
Authority
TW
Taiwan
Prior art keywords
memory cell
resistive memory
array
voltage
patent application
Prior art date
Application number
TW092101140A
Other languages
English (en)
Chinese (zh)
Inventor
Frederick A Perner
Lung Tran
James R Eaton Jr
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of TW200307287A publication Critical patent/TW200307287A/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
TW092101140A 2002-05-22 2003-01-20 Equi-potential sensing magnetic random access memory (MRAM) with series diodes TW200307287A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/151,913 US20030218905A1 (en) 2002-05-22 2002-05-22 Equi-potential sensing magnetic random access memory (MRAM) with series diodes

Publications (1)

Publication Number Publication Date
TW200307287A true TW200307287A (en) 2003-12-01

Family

ID=29400513

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092101140A TW200307287A (en) 2002-05-22 2003-01-20 Equi-potential sensing magnetic random access memory (MRAM) with series diodes

Country Status (6)

Country Link
US (2) US20030218905A1 (OSRAM)
EP (1) EP1365415A1 (OSRAM)
JP (1) JP2003346475A (OSRAM)
KR (1) KR20030091724A (OSRAM)
CN (1) CN1459793A (OSRAM)
TW (1) TW200307287A (OSRAM)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7035141B1 (en) * 2004-11-17 2006-04-25 Spansion Llc Diode array architecture for addressing nanoscale resistive memory arrays
US7397074B2 (en) * 2005-01-12 2008-07-08 Samsung Electronics Co., Ltd. RF field heated diodes for providing thermally assisted switching to magnetic memory elements
US7180770B2 (en) * 2005-03-24 2007-02-20 Hewlett-Packard Development Company, L.P. Series diode thermally assisted MRAM
JP4911318B2 (ja) 2005-08-02 2012-04-04 日本電気株式会社 磁気ランダムアクセスメモリ及びその動作方法
US8089803B2 (en) 2005-10-03 2012-01-03 Nec Corporation Magnetic random access memory and operating method of the same
US20070253245A1 (en) * 2006-04-27 2007-11-01 Yadav Technology High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
US8120949B2 (en) * 2006-04-27 2012-02-21 Avalanche Technology, Inc. Low-cost non-volatile flash-RAM memory
JP2008123595A (ja) 2006-11-10 2008-05-29 Matsushita Electric Ind Co Ltd 半導体記憶装置
WO2010041325A1 (ja) * 2008-10-09 2010-04-15 株式会社 東芝 クロスポイント型抵抗変化メモリ
US9058876B2 (en) * 2009-08-14 2015-06-16 4D-S, Ltd Methods and circuits for bulk erase of resistive memory
EP2641246B1 (en) * 2010-11-19 2016-02-24 Hewlett-Packard Development Company, L.P. Circuit and method for reading a resistive switching device in an array
KR20130021739A (ko) 2011-08-23 2013-03-06 삼성전자주식회사 저항성 메모리 장치, 이의 테스트 시스템 및 저항성 메모리 장치의 테스트 방법
GB2510339A (en) * 2013-01-30 2014-08-06 Ibm Method and apparatus for read measurement of a plurality of resistive memory cells
WO2016186086A1 (ja) * 2015-05-15 2016-11-24 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路
KR102401581B1 (ko) 2015-10-26 2022-05-24 삼성전자주식회사 저항식 메모리 소자
JP6178451B1 (ja) * 2016-03-16 2017-08-09 株式会社東芝 メモリセルおよび磁気メモリ
JP7173594B2 (ja) 2017-12-08 2022-11-16 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路及びセンスアンプ
US11705176B2 (en) 2020-08-07 2023-07-18 Tohoku University Storage circuit provided with variable resistance type elements, and its test device
JP7677611B2 (ja) 2021-03-03 2025-05-15 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
DE19744095A1 (de) * 1997-10-06 1999-04-15 Siemens Ag Speicherzellenanordnung
US6259644B1 (en) * 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
US6130835A (en) * 1997-12-02 2000-10-10 International Business Machines Corporation Voltage biasing for magnetic RAM with magnetic tunnel memory cells
GB2343308B (en) * 1998-10-30 2000-10-11 Nikolai Franz Gregor Schwabe Magnetic storage device
US6188615B1 (en) * 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers
US6185143B1 (en) * 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
DE10053965A1 (de) * 2000-10-31 2002-06-20 Infineon Technologies Ag Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung
US6885573B2 (en) * 2002-03-15 2005-04-26 Hewlett-Packard Development Company, L.P. Diode for use in MRAM devices and method of manufacture

Also Published As

Publication number Publication date
JP2003346475A (ja) 2003-12-05
CN1459793A (zh) 2003-12-03
EP1365415A1 (en) 2003-11-26
KR20030091724A (ko) 2003-12-03
US20040088471A1 (en) 2004-05-06
US20030218905A1 (en) 2003-11-27

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