TW200300455A - MgO deposition material and production method of the same - Google Patents
MgO deposition material and production method of the same Download PDFInfo
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- TW200300455A TW200300455A TW091134642A TW91134642A TW200300455A TW 200300455 A TW200300455 A TW 200300455A TW 091134642 A TW091134642 A TW 091134642A TW 91134642 A TW91134642 A TW 91134642A TW 200300455 A TW200300455 A TW 200300455A
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- 239000000463 material Substances 0.000 title claims abstract description 194
- 230000008021 deposition Effects 0.000 title claims abstract description 147
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 192
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 117
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 113
- 239000011593 sulfur Substances 0.000 claims abstract description 113
- 239000000460 chlorine Substances 0.000 claims abstract description 106
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 104
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 104
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 97
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 93
- 239000011574 phosphorus Substances 0.000 claims abstract description 93
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 93
- 238000000034 method Methods 0.000 claims abstract description 58
- 239000000843 powder Substances 0.000 claims description 120
- 238000002309 gasification Methods 0.000 claims description 64
- 238000011049 filling Methods 0.000 claims description 56
- 230000002079 cooperative effect Effects 0.000 claims description 39
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- 239000002994 raw material Substances 0.000 claims description 27
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- 238000000151 deposition Methods 0.000 abstract description 124
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- 239000011230 binding agent Substances 0.000 description 11
- 238000006477 desulfuration reaction Methods 0.000 description 11
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- 238000007733 ion plating Methods 0.000 description 11
- 230000004807 localization Effects 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- -1 argon ions Chemical class 0.000 description 9
- 238000006298 dechlorination reaction Methods 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 8
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- 238000000465 moulding Methods 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229910052700 potassium Inorganic materials 0.000 description 7
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- 229910052710 silicon Inorganic materials 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910052720 vanadium Inorganic materials 0.000 description 6
- 239000002202 Polyethylene glycol Substances 0.000 description 5
- 229910052770 Uranium Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
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- 229910052742 iron Inorganic materials 0.000 description 5
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- 239000000243 solution Substances 0.000 description 5
- 238000001694 spray drying Methods 0.000 description 5
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 4
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- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- 238000007088 Archimedes method Methods 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
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- 238000005566 electron beam evaporation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910001629 magnesium chloride Inorganic materials 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000877 morphologic effect Effects 0.000 description 2
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- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
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- 239000000853 adhesive Substances 0.000 description 1
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- 238000013019 agitation Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
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- 230000009970 fire resistant effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
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- 238000000227 grinding Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
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- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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- 239000013535 sea water Substances 0.000 description 1
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- 238000005477 sputtering target Methods 0.000 description 1
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- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 235000020985 whole grains Nutrition 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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- C04B35/6261—Milling
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/03—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite
- C04B35/04—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite based on magnesium oxide
- C04B35/053—Fine ceramics
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62655—Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying
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- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001367347 | 2001-11-30 | ||
| JP2001367346 | 2001-11-30 | ||
| JP2001367345 | 2001-11-30 | ||
| JP2001367344 | 2001-11-30 | ||
| JP2002335651A JP2003226959A (ja) | 2001-11-30 | 2002-11-19 | ＭｇＯ蒸着材およびその製造方法 |
| JP2002335650A JP2003226958A (ja) | 2001-11-30 | 2002-11-19 | ＭｇＯ蒸着材およびその製造方法 |
| JP2002335652A JP2003226960A (ja) | 2001-11-30 | 2002-11-19 | ＭｇＯ蒸着材およびその製造方法 |
| JP2002335649A JP2003226956A (ja) | 2001-11-30 | 2002-11-19 | ＭｇＯ蒸着材およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
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| TW200300455A true TW200300455A (en) | 2003-06-01 |
| TWI301510B TWI301510B (enExample) | 2008-10-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091134642A TW200300455A (en) | 2001-11-30 | 2002-11-28 | MgO deposition material and production method of the same |
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| Country | Link |
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| US (1) | US7138350B2 (enExample) |
| EP (1) | EP1482068A4 (enExample) |
| KR (1) | KR20040069178A (enExample) |
| CN (1) | CN100376713C (enExample) |
| TW (1) | TW200300455A (enExample) |
| WO (1) | WO2003046249A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4225761B2 (ja) * | 2002-10-10 | 2009-02-18 | 三菱マテリアル株式会社 | Ｓｉ濃度を調整した多結晶ＭｇＯ蒸着材 |
| KR100467437B1 (ko) * | 2003-03-04 | 2005-01-24 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 패널 |
| KR100756153B1 (ko) * | 2003-09-24 | 2007-09-05 | 마츠시타 덴끼 산교 가부시키가이샤 | 플라즈마 디스플레이 패널 |
| KR100697495B1 (ko) * | 2003-09-26 | 2007-03-20 | 마츠시타 덴끼 산교 가부시키가이샤 | 플라즈마 디스플레이 패널 |
| KR100599708B1 (ko) * | 2004-05-25 | 2006-07-13 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 패널 |
| US20070029934A1 (en) * | 2005-08-03 | 2007-02-08 | Kim Ki-Dong | Plasma display panel |
| KR100839423B1 (ko) * | 2007-02-21 | 2008-06-19 | 삼성에스디아이 주식회사 | 산화 마그네슘 소결체, 및 이를 이용하여 제조된 플라즈마디스플레이 패널 |
| KR100846713B1 (ko) | 2007-03-21 | 2008-07-16 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 장치, 및 이의 제조 방법 |
| KR20080086075A (ko) | 2007-03-21 | 2008-09-25 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 장치 |
| KR20080092126A (ko) * | 2007-04-11 | 2008-10-15 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 장치 |
| US8227896B2 (en) * | 2009-12-11 | 2012-07-24 | International Business Machines Corporation | Resistive switching in nitrogen-doped MgO |
| CN103814152A (zh) * | 2011-12-27 | 2014-05-21 | 吉坤日矿日石金属株式会社 | 溅射用烧结体氧化镁靶及其制造方法 |
| KR102142037B1 (ko) * | 2012-11-07 | 2020-08-06 | 엔지케이 인슐레이터 엘티디 | 세라믹스 재료 및 스퍼터링 타겟 부재 |
| KR102100850B1 (ko) * | 2012-11-07 | 2020-04-14 | 엔지케이 인슐레이터 엘티디 | 세라믹스 재료 및 스퍼터링 타겟 부재 |
| JP6405587B2 (ja) * | 2013-11-26 | 2018-10-17 | 株式会社Ｊｏｌｅｄ | 有機ｅｌパネル及びその製造方法、並びにカラーフィルター基板 |
| JP7044328B2 (ja) * | 2018-06-01 | 2022-03-30 | 株式会社荏原製作所 | Ｎｉ－Ｆｅ基合金粉末、及び当該Ｎｉ－Ｆｅ基合金粉末を用いる合金皮膜の製造方法 |
| CN116768606A (zh) * | 2023-06-06 | 2023-09-19 | 先导薄膜材料（广东）有限公司 | 一种复合氧化镍镁靶材及其制备方法 |
| WO2025254805A1 (en) * | 2024-06-05 | 2025-12-11 | Heraeus Covantics North America Llc | Process for producing a sintered layered body by controlling the sulfur content of a powder employed |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5531129A (en) * | 1978-08-25 | 1980-03-05 | Hitachi Metals Ltd | Target material for physical vacuum deposition |
| JPS63203764A (ja) * | 1987-02-19 | 1988-08-23 | Mitsui Eng & Shipbuild Co Ltd | 蒸着用Ｔｅ又はＴｅ系合金の製造方法 |
| JP3127820B2 (ja) * | 1996-02-28 | 2001-01-29 | 三菱マテリアル株式会社 | 強誘電体膜形成用スパッタリングターゲットおよびその製造方法 |
| JPH1018026A (ja) * | 1996-07-04 | 1998-01-20 | Ulvac Japan Ltd | 酸化物膜の作製方法 |
| JPH11213875A (ja) * | 1998-01-29 | 1999-08-06 | Mitsubishi Electric Corp | Ａｃ型プラズマディスプレイパネル用保護膜材料及びその製造方法と、ａｃ型プラズマディスプレイパネル |
| JP3314728B2 (ja) | 1998-08-11 | 2002-08-12 | 三菱マテリアル株式会社 | 多結晶ＭｇＯ蒸着材 |
| JP4225761B2 (ja) * | 2002-10-10 | 2009-02-18 | 三菱マテリアル株式会社 | Ｓｉ濃度を調整した多結晶ＭｇＯ蒸着材 |
| KR100599708B1 (ko) * | 2004-05-25 | 2006-07-13 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 패널 |
| KR100603354B1 (ko) * | 2004-06-26 | 2006-07-20 | 삼성에스디아이 주식회사 | Pdp 보호막 형성용 조성물, 이를 이용하여 제조된 pdp 보호막, 보호막의 제조방법, 및 이를 채용한 pdp |
-
2002
- 2002-11-28 TW TW091134642A patent/TW200300455A/zh not_active IP Right Cessation
- 2002-11-29 KR KR10-2004-7008111A patent/KR20040069178A/ko not_active Ceased
- 2002-11-29 EP EP02788700A patent/EP1482068A4/en not_active Withdrawn
- 2002-11-29 WO PCT/JP2002/012541 patent/WO2003046249A1/ja not_active Ceased
- 2002-11-29 US US10/496,693 patent/US7138350B2/en not_active Expired - Lifetime
- 2002-11-29 CN CNB02827735XA patent/CN100376713C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1482068A1 (en) | 2004-12-01 |
| EP1482068A4 (en) | 2012-04-11 |
| US20050045065A1 (en) | 2005-03-03 |
| WO2003046249A1 (en) | 2003-06-05 |
| CN100376713C (zh) | 2008-03-26 |
| US7138350B2 (en) | 2006-11-21 |
| TWI301510B (enExample) | 2008-10-01 |
| KR20040069178A (ko) | 2004-08-04 |
| CN1617946A (zh) | 2005-05-18 |
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