TR201911203T4 - Yüksek performanslı bellek cihazları için saat ve kontrol sinyali üretimi. - Google Patents

Yüksek performanslı bellek cihazları için saat ve kontrol sinyali üretimi. Download PDF

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Publication number
TR201911203T4
TR201911203T4 TR2019/11203T TR201911203T TR201911203T4 TR 201911203 T4 TR201911203 T4 TR 201911203T4 TR 2019/11203 T TR2019/11203 T TR 2019/11203T TR 201911203 T TR201911203 T TR 201911203T TR 201911203 T4 TR201911203 T4 TR 201911203T4
Authority
TR
Turkey
Prior art keywords
memory devices
clock
control signal
signal generation
high performance
Prior art date
Application number
TR2019/11203T
Other languages
English (en)
Inventor
Chen Zhi̇qi̇n
Ho Jung Chang
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of TR201911203T4 publication Critical patent/TR201911203T4/tr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/227—Timing of memory operations based on dummy memory elements or replica circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2281—Timing of a read operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/229—Timing of a write operation

Abstract

Buluş, genel olarak elektronik ile ve daha spesifik olarak bellek cihazlarında saat ve kontrol sinyalleri üretme teknikleri ile ilgilidir.
TR2019/11203T 2007-05-31 2008-05-31 Yüksek performanslı bellek cihazları için saat ve kontrol sinyali üretimi. TR201911203T4 (tr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/756,017 US7881147B2 (en) 2007-05-31 2007-05-31 Clock and control signal generation for high performance memory devices

Publications (1)

Publication Number Publication Date
TR201911203T4 true TR201911203T4 (tr) 2019-08-21

Family

ID=39884234

Family Applications (1)

Application Number Title Priority Date Filing Date
TR2019/11203T TR201911203T4 (tr) 2007-05-31 2008-05-31 Yüksek performanslı bellek cihazları için saat ve kontrol sinyali üretimi.

Country Status (14)

Country Link
US (1) US7881147B2 (tr)
EP (2) EP2158592B1 (tr)
JP (1) JP5149379B2 (tr)
KR (1) KR101093336B1 (tr)
CN (2) CN101779246B (tr)
DK (1) DK2158592T3 (tr)
ES (2) ES2745948T3 (tr)
HU (2) HUE045650T2 (tr)
PL (1) PL2158592T3 (tr)
PT (1) PT2158592T (tr)
SI (1) SI2158592T1 (tr)
TR (1) TR201911203T4 (tr)
TW (1) TW200931436A (tr)
WO (1) WO2008151099A1 (tr)

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US8811109B2 (en) 2012-02-27 2014-08-19 Qualcomm Incorporated Memory pre-decoder circuits employing pulse latch(es) for reducing memory access times, and related systems and methods
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CN105448318A (zh) * 2014-08-29 2016-03-30 展讯通信（上海）有限公司 一种存储器及其时序追踪电路
CN104363393A (zh) * 2014-12-01 2015-02-18 重庆洪深现代视声技术有限公司 数据处理装置、电视信号发生器
CN104637539B (zh) * 2015-02-15 2017-10-24 上海华虹宏力半导体制造有限公司 Rom读数据内部时钟脉冲产生电路和方法
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KR102423289B1 (ko) 2016-03-23 2022-07-20 삼성전자주식회사 동작 속도를 향상시키는 반도체 메모리 장치
JP6784626B2 (ja) * 2017-03-24 2020-11-11 キヤノン株式会社 記録装置、制御方法、及びプログラム
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US10741227B2 (en) * 2018-08-08 2020-08-11 Arm Limited Clock generating circuitry
US10937473B2 (en) * 2018-08-08 2021-03-02 Micron Technology, Inc. Clock signal drivers for read and write memory operations
JP2020042873A (ja) * 2018-09-11 2020-03-19 株式会社東芝 半導体記憶装置
US10901454B2 (en) * 2019-02-06 2021-01-26 Qualcomm Incorporated Clock buffering to reduce memory hold time
KR20200118332A (ko) * 2019-04-05 2020-10-15 에스케이하이닉스 시스템아이씨 주식회사 불휘발성 메모리 장치의 동적 전압 공급 회로 및 이를 포함하는 불휘발성 메모리 장치
US20210327501A1 (en) * 2020-04-20 2021-10-21 Stmicroelectronics International N.V. Lower power memory write operation
US11442875B2 (en) * 2020-05-18 2022-09-13 Integrated Silicon Solution, (Cayman) Inc. Arbitration control for pseudostatic random access memory device
US11417370B2 (en) * 2020-08-12 2022-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device
KR20220118644A (ko) * 2021-02-19 2022-08-26 에스케이하이닉스 주식회사 분주 회로 시스템 및 이를 포함하는 반도체 메모리 시스템
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Also Published As

Publication number Publication date
DK2158592T3 (da) 2019-08-26
CN103177757B (zh) 2016-09-21
HUE045650T2 (hu) 2020-01-28
ES2908670T3 (es) 2022-05-03
CN101779246A (zh) 2010-07-14
CN101779246B (zh) 2013-03-27
CN103177757A (zh) 2013-06-26
KR101093336B1 (ko) 2011-12-14
EP3460798A1 (en) 2019-03-27
KR20100028070A (ko) 2010-03-11
WO2008151099A1 (en) 2008-12-11
EP2158592A1 (en) 2010-03-03
US7881147B2 (en) 2011-02-01
US20080298142A1 (en) 2008-12-04
HUE058144T2 (hu) 2022-07-28
PT2158592T (pt) 2019-10-10
JP5149379B2 (ja) 2013-02-20
ES2745948T3 (es) 2020-03-04
SI2158592T1 (sl) 2019-09-30
JP2010529582A (ja) 2010-08-26
EP3460798B1 (en) 2022-02-23
TW200931436A (en) 2009-07-16
EP2158592B1 (en) 2019-06-19
PL2158592T3 (pl) 2019-12-31

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