SU1163765A1 - METHOD OF MANUFACTURING OMIC CONTACTS - Google Patents

METHOD OF MANUFACTURING OMIC CONTACTS

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Publication number
SU1163765A1
SU1163765A1 SU3687766/25A SU3687766A SU1163765A1 SU 1163765 A1 SU1163765 A1 SU 1163765A1 SU 3687766/25 A SU3687766/25 A SU 3687766/25A SU 3687766 A SU3687766 A SU 3687766A SU 1163765 A1 SU1163765 A1 SU 1163765A1
Authority
SU
USSR - Soviet Union
Prior art keywords
contacts
omic
manufacturing
applying
barrier layer
Prior art date
Application number
SU3687766/25A
Other languages
Russian (ru)
Inventor
Л.И. Гурский
Ю.Л. Бобченок
В.Г. Войтик
Е.В. Автюшков
Original Assignee
Физико-технический институт АН БССР
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Физико-технический институт АН БССР filed Critical Физико-технический институт АН БССР
Priority to SU3687766/25A priority Critical patent/SU1163765A1/en
Application granted granted Critical
Publication of SU1163765A1 publication Critical patent/SU1163765A1/en

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Abstract

Способ изготовления омических контактов, включающий легирование кремниевой подложки для создания мелкозалегающего p-n-перехода, нанесение барьерного слоя переходного металла, облучение его потоком ионов, нанесение токопроводящего слоя, термообработку в вакууме при температуре 673-1073 K, отличающийся тем, что, с целью расширения технологических возможностей, легирование кремния проводят до получения поверхностной концентрации 8·10- 8·10м, а в качестве барьерного слоя используют пленку тантала или вольфрама.A method of making ohmic contacts, including doping a silicon substrate to create a shallow pn junction, applying a transition metal barrier layer, irradiating it with an ion flow, applying a conductive layer, heat treatment in vacuum at 673-1073 K, characterized in that possibilities, the doping of silicon is carried out to obtain a surface concentration of 8 · 10-8 · 10m, and a film of tantalum or tungsten is used as a barrier layer.

SU3687766/25A 1984-01-05 1984-01-05 METHOD OF MANUFACTURING OMIC CONTACTS SU1163765A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU3687766/25A SU1163765A1 (en) 1984-01-05 1984-01-05 METHOD OF MANUFACTURING OMIC CONTACTS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU3687766/25A SU1163765A1 (en) 1984-01-05 1984-01-05 METHOD OF MANUFACTURING OMIC CONTACTS

Publications (1)

Publication Number Publication Date
SU1163765A1 true SU1163765A1 (en) 2012-06-20

Family

ID=60540410

Family Applications (1)

Application Number Title Priority Date Filing Date
SU3687766/25A SU1163765A1 (en) 1984-01-05 1984-01-05 METHOD OF MANUFACTURING OMIC CONTACTS

Country Status (1)

Country Link
SU (1) SU1163765A1 (en)

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