SG93850A1 - Growth method of a nitride iii-v compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device - Google Patents

Growth method of a nitride iii-v compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device

Info

Publication number
SG93850A1
SG93850A1 SG9905771A SG1999005771A SG93850A1 SG 93850 A1 SG93850 A1 SG 93850A1 SG 9905771 A SG9905771 A SG 9905771A SG 1999005771 A SG1999005771 A SG 1999005771A SG 93850 A1 SG93850 A1 SG 93850A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
manufacturing
semiconductor
nitride iii
growth method
Prior art date
Application number
SG9905771A
Other languages
English (en)
Inventor
Hino Tomonori
Asano Takeharu
Asatsuma Tsunenori
Kijima Satoru
Funato Kenji
Tomiya Shigetaka
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SG93850A1 publication Critical patent/SG93850A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
SG9905771A 1998-11-26 1999-11-19 Growth method of a nitride iii-v compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device SG93850A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33585198A JP3470623B2 (ja) 1998-11-26 1998-11-26 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法、半導体装置の製造方法および半導体装置

Publications (1)

Publication Number Publication Date
SG93850A1 true SG93850A1 (en) 2003-01-21

Family

ID=18293109

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9905771A SG93850A1 (en) 1998-11-26 1999-11-19 Growth method of a nitride iii-v compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device

Country Status (8)

Country Link
US (1) US6682991B1 (fr)
EP (1) EP1005067B1 (fr)
JP (1) JP3470623B2 (fr)
KR (1) KR100724010B1 (fr)
CN (2) CN1302519C (fr)
DE (1) DE69936564T2 (fr)
SG (1) SG93850A1 (fr)
TW (1) TW429660B (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3702700B2 (ja) * 1999-03-31 2005-10-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
US6812053B1 (en) 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
DE10056645B4 (de) * 2000-11-09 2007-03-08 Azzurro Semiconductors Ag Verfahren zur Herstellung von rißfreien, planaren Gruppe-III-N,Gruppe III-V-N und Metall-Stickstoff Bauelementestrukturen auf Si-Substraten mittels epitaktischer Methoden
JP2003008143A (ja) * 2001-06-18 2003-01-10 Sony Corp マルチビーム半導体レーザ素子
JP4767987B2 (ja) * 2002-12-05 2011-09-07 日本碍子株式会社 半導体積層構造及びｉｉｉ族窒化物層群の転位低減方法
JP4457576B2 (ja) 2003-05-08 2010-04-28 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物結晶およびその製造方法
US20070184671A1 (en) * 2003-05-30 2007-08-09 Showa Denko K.K. Method for production of group lll nitride semiconductor device
DE10335081A1 (de) 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoeleketronischer Halbleiterchip
DE10335080A1 (de) * 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN100372138C (zh) * 2005-07-13 2008-02-27 晶能光电（江西）有限公司 在硅衬底上制备铟镓铝氮材料的方法
US7638810B2 (en) * 2005-09-09 2009-12-29 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. GaN laser with refractory metal ELOG masks for intracavity contact
CN100362133C (zh) * 2005-09-26 2008-01-16 中国地质大学（北京） 一种硬质耐磨保护薄膜的制备方法
CN100424224C (zh) * 2006-07-20 2008-10-08 上海交通大学 反应磁控溅射TiN/SiO2硬质纳米多层涂层的制备方法
JP4884866B2 (ja) * 2006-07-25 2012-02-29 三菱電機株式会社 窒化物半導体装置の製造方法
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
CN102163667B (zh) * 2008-01-14 2014-04-16 晶元光电股份有限公司 半导体发光结构
KR101449035B1 (ko) * 2008-04-30 2014-10-08 엘지이노텍 주식회사 반도체 발광소자
CN102044484A (zh) * 2009-10-23 2011-05-04 中芯国际集成电路制造(上海)有限公司 半导体器件上的钨塞制造方法
JP5370279B2 (ja) * 2010-06-11 2013-12-18 豊田合成株式会社 ｎ型ＩＩＩ族窒化物半導体の製造方法
CN102354659B (zh) * 2011-11-02 2016-05-11 上海华虹宏力半导体制造有限公司 掩膜成核消除方法以及选择性外延生长方法
CN104221129A (zh) * 2012-04-13 2014-12-17 坦德姆太阳能股份公司 基于外延生长来制造半导体设备的方法
CN103165779B (zh) * 2013-02-08 2016-04-06 芜湖德豪润达光电科技有限公司 Led半导体元件及其制造方法
KR102075986B1 (ko) * 2014-02-03 2020-02-11 삼성전자주식회사 반도체 발광소자
JP2016171265A (ja) * 2015-03-13 2016-09-23 株式会社東芝 半導体装置およびその製造方法
CN105633790A (zh) * 2016-03-09 2016-06-01 中国科学院合肥物质科学研究院 一种利用GaN激光二极管泵浦稀土离子掺杂钽铌酸盐实现可见激光的方法
US10707308B2 (en) 2017-12-24 2020-07-07 HangZhou HaiCun Information Technology Co., Ltd. Hetero-epitaxial output device array
WO2021253284A1 (fr) * 2020-06-17 2021-12-23 华为技术有限公司 Tranche épitaxiale, puce à del et écran d'affichage
CN112103305B (zh) * 2020-09-21 2022-05-27 中国科学院长春光学精密机械与物理研究所 基于微图案化石墨烯的Micro-LED阵列及其制备方法、显示装置
JP7556246B2 (ja) 2020-09-23 2024-09-26 セイコーエプソン株式会社 発光装置、発光装置の製造方法およびプロジェクター
WO2024095458A1 (fr) * 2022-11-04 2024-05-10 日本電信電話株式会社 Procédé permettant de produire un dispositif à semi-conducteur
WO2024157687A1 (fr) * 2023-01-25 2024-08-02 株式会社ジャパンディスプレイ Dispositif électroluminescent et son procédé de fabrication

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7412383A (nl) * 1974-09-19 1976-03-23 Philips Nv Werkwijze voor het vervaardigen van een in- richting met een geleiderpatroon.
FR2580672B1 (fr) * 1985-04-19 1987-05-15 France Etat Procede de fabrication sur un support isolant d'un film de silicium monocristallin oriente et a defauts localises
US5326716A (en) * 1986-02-11 1994-07-05 Max Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy
FR2629637B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法
FR2645345A1 (fr) * 1989-03-31 1990-10-05 Thomson Csf Procede de modulation dirigee de la composition ou du dopage de semi-conducteurs, notamment pour la realisation de composants electroniques monolithiques de type planar, utilisation et produits correspondants
US4971928A (en) * 1990-01-16 1990-11-20 General Motors Corporation Method of making a light emitting semiconductor having a rear reflecting surface
US5208167A (en) * 1991-09-30 1993-05-04 Rohm Co., Ltd. Method for producing SOI substrate
JPH1022568A (ja) * 1996-07-04 1998-01-23 Hitachi Ltd 半導体装置
JP3925753B2 (ja) * 1997-10-24 2007-06-06 ソニー株式会社 半導体素子およびその製造方法ならびに半導体発光素子
US6271104B1 (en) * 1998-08-10 2001-08-07 Mp Technologies Fabrication of defect free III-nitride materials
US6240115B1 (en) * 1998-08-27 2001-05-29 Agilent Technologies, Inc. Epitaxial facet formation for laser diodes based on III-V material systems
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Also Published As

Publication number Publication date
EP1005067B1 (fr) 2007-07-18
JP3470623B2 (ja) 2003-11-25
DE69936564T2 (de) 2008-04-03
KR100724010B1 (ko) 2007-05-31
DE69936564D1 (de) 2007-08-30
EP1005067A2 (fr) 2000-05-31
US6682991B1 (en) 2004-01-27
TW429660B (en) 2001-04-11
CN1501444A (zh) 2004-06-02
JP2000164988A (ja) 2000-06-16
KR20000035670A (ko) 2000-06-26
CN1302519C (zh) 2007-02-28
EP1005067A3 (fr) 2000-10-18
CN1147921C (zh) 2004-04-28
CN1258094A (zh) 2000-06-28

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