SG93197A1 - Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution - Google Patents

Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution

Info

Publication number
SG93197A1
SG93197A1 SG9901639A SG1999001639A SG93197A1 SG 93197 A1 SG93197 A1 SG 93197A1 SG 9901639 A SG9901639 A SG 9901639A SG 1999001639 A SG1999001639 A SG 1999001639A SG 93197 A1 SG93197 A1 SG 93197A1
Authority
SG
Singapore
Prior art keywords
etching
etching solution
porous silicon
solution
semiconductor member
Prior art date
Application number
SG9901639A
Other languages
English (en)
Inventor
Kiyofumi Sakaguchi
Nobuhiko Sato
Takao Yonehara
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3148164A external-priority patent/JPH04346418A/ja
Priority claimed from JP3149297A external-priority patent/JPH04349621A/ja
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG93197A1 publication Critical patent/SG93197A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1922—Preparing SOI wafers using silicon etch back techniques, e.g. BESOI or ELTRAN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/15—Preparing bulk and homogeneous wafers by making porous regions on the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Weting (AREA)
SG9901639A 1991-02-15 1992-02-14 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution SG93197A1 (en)

Applications Claiming Priority (49)

Application Number Priority Date Filing Date Title
JP4221391 1991-02-15
JP4221291 1991-02-15
JP5560391 1991-02-28
JP5560791 1991-02-28
JP5560291 1991-02-28
JP5561491 1991-02-28
JP5560691 1991-02-28
JP5560191 1991-02-28
JP5560891 1991-02-28
JP5561091 1991-02-28
JP5560491 1991-02-28
JP5560991 1991-02-28
JP5560591 1991-02-28
JP5561191 1991-02-28
JP5561391 1991-02-28
JP5561291 1991-02-28
JP8575591 1991-03-27
JP14816091 1991-05-24
JP14816391 1991-05-24
JP3148164A JPH04346418A (ja) 1991-05-24 1991-05-24 半導体基材の作製方法
JP14816191 1991-05-24
JP14930691 1991-05-27
JP14930091 1991-05-27
JP14929891 1991-05-27
JP14930891 1991-05-27
JP14930291 1991-05-27
JP14931191 1991-05-27
JP14930191 1991-05-27
JP14931091 1991-05-27
JP3149297A JPH04349621A (ja) 1991-05-27 1991-05-27 半導体基材の作製方法
JP14930991 1991-05-27
JP14930791 1991-05-27
JP14929991 1991-05-27
JP15098091 1991-05-28
JP15099091 1991-05-28
JP15098391 1991-05-28
JP15098291 1991-05-28
JP15098191 1991-05-28
JP15098491 1991-05-28
JP15098991 1991-05-28
JP15099391 1991-05-28
JP15098591 1991-05-28
JP15099191 1991-05-28
JP15099491 1991-05-28
JP15099291 1991-05-28
JP15224991 1991-05-29
JP15224891 1991-05-29
JP15225091 1991-05-29
JP15225191 1991-05-29

Publications (1)

Publication Number Publication Date
SG93197A1 true SG93197A1 (en) 2002-12-17

Family

ID=27586982

Family Applications (2)

Application Number Title Priority Date Filing Date
SG9901639A SG93197A1 (en) 1991-02-15 1992-02-14 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
SG1996006372A SG47089A1 (en) 1991-02-15 1992-02-14 Etching solution for etching porous silicon etching method using the etching solution and method of preparing semiconductor member using the etching solution

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG1996006372A SG47089A1 (en) 1991-02-15 1992-02-14 Etching solution for etching porous silicon etching method using the etching solution and method of preparing semiconductor member using the etching solution

Country Status (8)

Country Link
US (1) US5767020A (cg-RX-API-DMAC7.html)
EP (2) EP1347505A3 (cg-RX-API-DMAC7.html)
KR (1) KR960007640B1 (cg-RX-API-DMAC7.html)
CN (1) CN1099905A (cg-RX-API-DMAC7.html)
AT (1) ATE244931T1 (cg-RX-API-DMAC7.html)
CA (1) CA2061264C (cg-RX-API-DMAC7.html)
MY (1) MY114349A (cg-RX-API-DMAC7.html)
SG (2) SG93197A1 (cg-RX-API-DMAC7.html)

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US6171512B1 (en) * 1991-02-15 2001-01-09 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
CA2069038C (en) * 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
TW211621B (cg-RX-API-DMAC7.html) * 1991-07-31 1993-08-21 Canon Kk
DE69232347T2 (de) * 1991-09-27 2002-07-11 Canon K.K., Tokio/Tokyo Verfahren zur Behandlung eines Substrats aus Silizium
JP3112106B2 (ja) * 1991-10-11 2000-11-27 キヤノン株式会社 半導体基材の作製方法
DE69233314T2 (de) * 1991-10-11 2005-03-24 Canon K.K. Verfahren zur Herstellung von Halbleiter-Produkten
JP3237888B2 (ja) * 1992-01-31 2001-12-10 キヤノン株式会社 半導体基体及びその作製方法
JP3416163B2 (ja) * 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
TW330313B (en) * 1993-12-28 1998-04-21 Canon Kk A semiconductor substrate and process for producing same
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US6103598A (en) * 1995-07-13 2000-08-15 Canon Kabushiki Kaisha Process for producing semiconductor substrate
CA2182442C (en) * 1995-08-02 2000-10-24 Kiyofumi Sakaguchi Semiconductor substrate and fabrication method for the same
US6306729B1 (en) 1997-12-26 2001-10-23 Canon Kabushiki Kaisha Semiconductor article and method of manufacturing the same
JP3218564B2 (ja) 1998-01-14 2001-10-15 キヤノン株式会社 多孔質領域の除去方法及び半導体基体の製造方法
TW405234B (en) * 1998-05-18 2000-09-11 United Microelectronics Corp Method for manufacturing a polysilicon fuse and the structure of the same
US6376859B1 (en) 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
US6410436B2 (en) 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
US6680900B1 (en) * 1999-06-04 2004-01-20 Ricoh Company, Ltd. Optical-pickup slider, manufacturing method thereof, probe and manufacturing method thereof, and probe array and manufacturing method thereof
DE19935446A1 (de) * 1999-07-28 2001-02-01 Merck Patent Gmbh Ätzlösung, Flußsäure enthaltend
US6653209B1 (en) 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
US6790785B1 (en) 2000-09-15 2004-09-14 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch porous silicon formation method
US6762134B2 (en) 2000-11-27 2004-07-13 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch to produce porous group III-V materials
US20030134486A1 (en) * 2002-01-16 2003-07-17 Zhongze Wang Semiconductor-on-insulator comprising integrated circuitry
JP2004228150A (ja) * 2003-01-20 2004-08-12 Canon Inc エッチング方法
US20050132332A1 (en) * 2003-12-12 2005-06-16 Abhay Sathe Multi-location coordinated test apparatus
US7244659B2 (en) * 2005-03-10 2007-07-17 Micron Technology, Inc. Integrated circuits and methods of forming a field effect transistor
US7972910B2 (en) 2005-06-03 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of integrated circuit device including thin film transistor
US7557002B2 (en) * 2006-08-18 2009-07-07 Micron Technology, Inc. Methods of forming transistor devices
CN101536187A (zh) * 2006-10-05 2009-09-16 日立化成工业株式会社 有序排列、大长宽比、高密度的硅纳米线及其制造方法
US7989322B2 (en) * 2007-02-07 2011-08-02 Micron Technology, Inc. Methods of forming transistors
EP2104140A1 (en) * 2008-03-21 2009-09-23 Rise Technology S.r.l. Conductive microstructure obtained by converting porous silicon into porous metal
IT1391596B1 (it) * 2008-11-04 2012-01-11 Rise Technology S R L Microstrutture ottenute convertendo silicio poroso
US8268640B2 (en) 2008-03-21 2012-09-18 Rise Technology S.R.L. Method for making microstructures by converting porous silicon into porous metal or ceramics
US8387230B2 (en) * 2010-08-27 2013-03-05 Transducerworks, Llc Method of making an ultrasonic transducer system
KR20140009182A (ko) 2010-10-22 2014-01-22 캘리포니아 인스티튜트 오브 테크놀로지 낮은 열전도율을 위한 나노메쉬 포노닉 구조들 및 열전 에너지 변환 재료들
US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US9595653B2 (en) 2011-10-20 2017-03-14 California Institute Of Technology Phononic structures and related devices and methods
WO2013109729A1 (en) 2012-01-17 2013-07-25 Silicium Energy, Inc. Systems and methods for forming thermoelectric devices
US9136134B2 (en) 2012-02-22 2015-09-15 Soitec Methods of providing thin layers of crystalline semiconductor material, and related structures and devices
WO2014028903A1 (en) 2012-08-17 2014-02-20 Silicium Energy, Inc. Systems and methods for forming thermoelectric devices
WO2014070795A1 (en) 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
DE102014103303A1 (de) 2014-03-12 2015-10-01 Universität Konstanz Verfahren zum Herstellen von Solarzellen mit simultan rückgeätzten dotierten Bereichen
WO2015148554A1 (en) 2014-03-25 2015-10-01 Silicium Energy, Inc. Thermoelectric devices and systems
TW201809931A (zh) 2016-05-03 2018-03-16 麥崔克斯工業股份有限公司 熱電裝置及系統
USD819627S1 (en) 2016-11-11 2018-06-05 Matrix Industries, Inc. Thermoelectric smartwatch
CN112221010B (zh) * 2020-11-09 2022-08-09 中国科学技术大学 一种采用金属辅助湿法刻蚀制备硅基微针的制备方法及其应用
US11587362B2 (en) 2020-12-16 2023-02-21 Lenovo (Singapore) Pte. Ltd. Techniques for determining sign language gesture partially shown in image(s)
CN115161032A (zh) * 2022-07-05 2022-10-11 北京师范大学 一种适用于单晶硅片的腐蚀溶液及方法

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US4171242A (en) * 1976-12-17 1979-10-16 International Business Machines Corporation Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass
US4983251A (en) * 1985-06-20 1991-01-08 U.S. Philips Corporation Method of manufacturing semiconductor devices

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US4171242A (en) * 1976-12-17 1979-10-16 International Business Machines Corporation Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass
US4983251A (en) * 1985-06-20 1991-01-08 U.S. Philips Corporation Method of manufacturing semiconductor devices

Also Published As

Publication number Publication date
EP1347505A2 (en) 2003-09-24
EP0499488B9 (en) 2004-01-28
SG47089A1 (en) 1998-03-20
MY114349A (en) 2002-10-31
EP0499488A2 (en) 1992-08-19
ATE244931T1 (de) 2003-07-15
CN1099905A (zh) 1995-03-08
US5767020A (en) 1998-06-16
EP0499488B1 (en) 2003-07-09
KR960007640B1 (en) 1996-06-07
EP0499488A3 (cg-RX-API-DMAC7.html) 1995-03-01
CA2061264C (en) 1999-11-16
CA2061264A1 (en) 1992-08-16
EP1347505A3 (en) 2004-10-20

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