SG93190G - Wire for bonding a semiconductor device - Google Patents

Wire for bonding a semiconductor device

Info

Publication number
SG93190G
SG93190G SG931/90A SG93190A SG93190G SG 93190 G SG93190 G SG 93190G SG 931/90 A SG931/90 A SG 931/90A SG 93190 A SG93190 A SG 93190A SG 93190 G SG93190 G SG 93190G
Authority
SG
Singapore
Prior art keywords
ppm
wire
bonding
fine
purity copper
Prior art date
Application number
SG931/90A
Other languages
English (en)
Original Assignee
Mitsubishi Metal Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60065142A external-priority patent/JPS61224443A/ja
Priority claimed from JP60141822A external-priority patent/JPH0736431B2/ja
Priority claimed from JP60161666A external-priority patent/JPS6222469A/ja
Priority claimed from JP60235988A external-priority patent/JPS6294969A/ja
Application filed by Mitsubishi Metal Corp, Mitsubishi Electric Corp filed Critical Mitsubishi Metal Corp
Publication of SG93190G publication Critical patent/SG93190G/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
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    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
SG931/90A 1985-03-29 1990-11-17 Wire for bonding a semiconductor device SG93190G (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP60065142A JPS61224443A (ja) 1985-03-29 1985-03-29 半導体装置用ボンデイングワイヤ
JP60141822A JPH0736431B2 (ja) 1985-06-28 1985-06-28 半導体装置のボンディングワイヤ用高純度銅の製造法
JP60161666A JPS6222469A (ja) 1985-07-22 1985-07-22 半導体装置用ボンデイングワイヤ
JP60235988A JPS6294969A (ja) 1985-10-22 1985-10-22 半導体装置用ボンデイングワイヤ

Publications (1)

Publication Number Publication Date
SG93190G true SG93190G (en) 1991-01-18

Family

ID=27464549

Family Applications (1)

Application Number Title Priority Date Filing Date
SG931/90A SG93190G (en) 1985-03-29 1990-11-17 Wire for bonding a semiconductor device

Country Status (5)

Country Link
US (1) US4726859A (de)
KR (1) KR900001243B1 (de)
DE (1) DE3610582A1 (de)
GB (1) GB2178761B (de)
SG (1) SG93190G (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175009B (en) * 1985-03-27 1990-02-07 Mitsubishi Metal Corp Wire for bonding a semiconductor device and process for producing the same
JPH084100B2 (ja) * 1987-02-27 1996-01-17 タツタ電線株式会社 ボンディング線
SG144124A1 (en) * 2006-12-29 2008-07-29 United Test & Assembly Ct Ltd Copper wire bonding on organic solderability preservative materials
JP4709296B2 (ja) * 2009-04-17 2011-06-22 日立電線株式会社 希薄銅合金材料の製造方法
JP5384224B2 (ja) * 2009-06-29 2014-01-08 三洋電機株式会社 太陽電池
WO2012120982A1 (ja) * 2011-03-07 2012-09-13 Jx日鉱日石金属株式会社 α線量が少ない銅又は銅合金及び銅又は銅合金を原料とするボンディングワイヤ
JP6032455B2 (ja) * 2011-09-29 2016-11-30 高周波熱錬株式会社 インターコネクタ用銅線の焼鈍方法
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JP6341330B1 (ja) 2017-12-06 2018-06-13 千住金属工業株式会社 Ｃｕボール、ＯＳＰ処理Ｃｕボール、Ｃｕ核ボール、はんだ継手、はんだペースト、フォームはんだ及びＣｕボールの製造方法

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KR860007728A (ko) 1986-10-15
GB2178761A (en) 1987-02-18
KR900001243B1 (ko) 1990-03-05
GB8607529D0 (en) 1986-04-30
GB2178761B (en) 1989-09-20
US4726859A (en) 1988-02-23
DE3610582A1 (de) 1986-11-06

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