SG91328A1 - Crackstop and oxygen barrier for low-k dielectric integrated circuits - Google Patents

Crackstop and oxygen barrier for low-k dielectric integrated circuits

Info

Publication number
SG91328A1
SG91328A1 SG200100288A SG200100288A SG91328A1 SG 91328 A1 SG91328 A1 SG 91328A1 SG 200100288 A SG200100288 A SG 200100288A SG 200100288 A SG200100288 A SG 200100288A SG 91328 A1 SG91328 A1 SG 91328A1
Authority
SG
Singapore
Prior art keywords
crackstop
low
integrated circuits
oxygen barrier
dielectric integrated
Prior art date
Application number
SG200100288A
Other languages
English (en)
Inventor
A Nye Henry Iii
J Mcgahay Vincent
A Tallman Kurt
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG91328A1 publication Critical patent/SG91328A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG200100288A 2000-02-10 2001-01-17 Crackstop and oxygen barrier for low-k dielectric integrated circuits SG91328A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/501,649 US6261945B1 (en) 2000-02-10 2000-02-10 Crackstop and oxygen barrier for low-K dielectric integrated circuits

Publications (1)

Publication Number Publication Date
SG91328A1 true SG91328A1 (en) 2002-09-17

Family

ID=23994453

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200100288A SG91328A1 (en) 2000-02-10 2001-01-17 Crackstop and oxygen barrier for low-k dielectric integrated circuits

Country Status (7)

Country Link
US (1) US6261945B1 (zh)
JP (1) JP3627009B2 (zh)
KR (1) KR100368088B1 (zh)
CN (1) CN1219318C (zh)
MY (1) MY119966A (zh)
SG (1) SG91328A1 (zh)
TW (1) TW506052B (zh)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6495918B1 (en) * 2000-09-05 2002-12-17 Infineon Technologies Ag Chip crack stop design for semiconductor chips
US6555467B2 (en) * 2001-09-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of making air gaps copper interconnect
US7098676B2 (en) * 2003-01-08 2006-08-29 International Business Machines Corporation Multi-functional structure for enhanced chip manufacturibility and reliability for low k dielectrics semiconductors and a crackstop integrity screen and monitor
US20050095835A1 (en) * 2003-09-26 2005-05-05 Tessera, Inc. Structure and method of making capped chips having vertical interconnects
EP1521300A1 (en) * 2003-09-30 2005-04-06 STMicroelectronics S.r.l. Circuit structure integrated on a semiconductor substrate and relevant manufacturing method
US20050116344A1 (en) * 2003-10-29 2005-06-02 Tessera, Inc. Microelectronic element having trace formed after bond layer
JP4855973B2 (ja) * 2003-11-10 2012-01-18 パナソニック株式会社 半導体装置およびその製造方法
US7453128B2 (en) 2003-11-10 2008-11-18 Panasonic Corporation Semiconductor device and method for fabricating the same
US20050112957A1 (en) * 2003-11-26 2005-05-26 International Business Machines Corporation Partial inter-locking metal contact structure for semiconductor devices and method of manufacture
US7109093B2 (en) * 2004-03-22 2006-09-19 International Business Machines Corporation Crackstop with release layer for crack control in semiconductors
CN100388480C (zh) * 2004-05-11 2008-05-14 中芯国际集成电路制造(上海)有限公司 低介电常数薄膜及其制造方法
JP4759229B2 (ja) * 2004-05-12 2011-08-31 ルネサスエレクトロニクス株式会社 半導体装置
JP4636839B2 (ja) * 2004-09-24 2011-02-23 パナソニック株式会社 電子デバイス
US20060183270A1 (en) * 2005-02-14 2006-08-17 Tessera, Inc. Tools and methods for forming conductive bumps on microelectronic elements
US8143095B2 (en) 2005-03-22 2012-03-27 Tessera, Inc. Sequential fabrication of vertical conductive interconnects in capped chips
US7795615B2 (en) * 2005-11-08 2010-09-14 Infineon Technologies Ag Capacitor integrated in a structure surrounding a die
US20070138644A1 (en) * 2005-12-15 2007-06-21 Tessera, Inc. Structure and method of making capped chip having discrete article assembled into vertical interconnect
US7936062B2 (en) 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
US8604605B2 (en) 2007-01-05 2013-12-10 Invensas Corp. Microelectronic assembly with multi-layer support structure
US20080173985A1 (en) * 2007-01-24 2008-07-24 International Business Machines Corporation Dielectric cap having material with optical band gap to substantially block uv radiation during curing treatment, and related methods
US7544602B2 (en) * 2007-03-29 2009-06-09 International Business Machines Corporation Method and structure for ultra narrow crack stop for multilevel semiconductor device
JP5448304B2 (ja) 2007-04-19 2014-03-19 パナソニック株式会社 半導体装置
JP4926918B2 (ja) * 2007-11-14 2012-05-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7812424B2 (en) * 2007-12-21 2010-10-12 Infineon Technologies Ag Moisture barrier capacitors in semiconductor components
US8187897B2 (en) 2008-08-19 2012-05-29 International Business Machines Corporation Fabricating product chips and die with a feature pattern that contains information relating to the product chip
US7821104B2 (en) * 2008-08-29 2010-10-26 Freescale Semiconductor, Inc. Package device having crack arrest feature and method of forming
US8237246B2 (en) * 2009-02-12 2012-08-07 International Business Machines Corporation Deep trench crackstops under contacts
JP2010034595A (ja) * 2009-11-12 2010-02-12 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP5879774B2 (ja) * 2011-06-30 2016-03-08 富士通セミコンダクター株式会社 半導体装置とその製造方法
US8604618B2 (en) * 2011-09-22 2013-12-10 International Business Machines Corporation Structure and method for reducing vertical crack propagation
US8729664B2 (en) 2012-04-02 2014-05-20 International Business Machines Corporation Discontinuous guard ring
US8937009B2 (en) 2013-04-25 2015-01-20 International Business Machines Corporation Far back end of the line metallization method and structures
JP6406138B2 (ja) * 2014-07-18 2018-10-17 株式会社デンソー 半導体装置およびその製造方法
US9589895B2 (en) 2015-04-15 2017-03-07 Globalfoundries Inc. Whole wafer edge seal
US10126260B2 (en) 2015-05-07 2018-11-13 International Business Machines Corporation Moisture detection and ingression monitoring systems and methods of manufacture
US10199461B2 (en) * 2015-10-27 2019-02-05 Texas Instruments Incorporated Isolation of circuit elements using front side deep trench etch
US10438902B2 (en) 2017-09-07 2019-10-08 Globalfoundries Inc. Arc-resistant crackstop
US10090258B1 (en) 2017-09-25 2018-10-02 Globalfoundries Inc. Crack-stop structure for an IC product and methods of making such a crack-stop structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2776457B2 (ja) * 1992-12-29 1998-07-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体デバイスのクラックストップ形成方法及び半導体デバイス
US5789302A (en) * 1997-03-24 1998-08-04 Siemens Aktiengesellschaft Crack stops
US6022791A (en) * 1997-10-15 2000-02-08 International Business Machines Corporation Chip crack stop
US6091131A (en) * 1998-04-28 2000-07-18 International Business Machines Corporation Integrated circuit having crack stop for interlevel dielectric layers

Also Published As

Publication number Publication date
MY119966A (en) 2005-08-30
TW506052B (en) 2002-10-11
KR20010082015A (ko) 2001-08-29
CN1219318C (zh) 2005-09-14
JP3627009B2 (ja) 2005-03-09
KR100368088B1 (ko) 2003-01-15
JP2001267325A (ja) 2001-09-28
CN1308372A (zh) 2001-08-15
US6261945B1 (en) 2001-07-17

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