AU2001296662A1 - Amorphized barrier layer for integrated circuit interconnects - Google Patents
Amorphized barrier layer for integrated circuit interconnectsInfo
- Publication number
- AU2001296662A1 AU2001296662A1 AU2001296662A AU9666201A AU2001296662A1 AU 2001296662 A1 AU2001296662 A1 AU 2001296662A1 AU 2001296662 A AU2001296662 A AU 2001296662A AU 9666201 A AU9666201 A AU 9666201A AU 2001296662 A1 AU2001296662 A1 AU 2001296662A1
- Authority
- AU
- Australia
- Prior art keywords
- integrated circuit
- barrier layer
- circuit interconnects
- amorphized
- amorphized barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/715,702 | 2000-11-18 | ||
US09/715,702 US6348732B1 (en) | 2000-11-18 | 2000-11-18 | Amorphized barrier layer for integrated circuit interconnects |
PCT/US2001/031297 WO2002041391A2 (en) | 2000-11-18 | 2001-10-04 | Amorphized barrier layer for integrated circuit interconnects |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001296662A1 true AU2001296662A1 (en) | 2002-05-27 |
Family
ID=24875137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001296662A Abandoned AU2001296662A1 (en) | 2000-11-18 | 2001-10-04 | Amorphized barrier layer for integrated circuit interconnects |
Country Status (4)
Country | Link |
---|---|
US (2) | US6348732B1 (en) |
AU (1) | AU2001296662A1 (en) |
TW (1) | TW533486B (en) |
WO (1) | WO2002041391A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6465867B1 (en) * | 2001-02-21 | 2002-10-15 | Advanced Micro Devices, Inc. | Amorphous and gradated barrier layer for integrated circuit interconnects |
US6541860B1 (en) * | 2001-06-05 | 2003-04-01 | Advanced Micro Devices, Inc. | Barrier-to-seed layer alloying in integrated circuit interconnects |
US6653236B2 (en) * | 2002-03-29 | 2003-11-25 | Micron Technology, Inc. | Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions |
US7341947B2 (en) * | 2002-03-29 | 2008-03-11 | Micron Technology, Inc. | Methods of forming metal-containing films over surfaces of semiconductor substrates |
DE10241154A1 (en) | 2002-09-05 | 2004-03-11 | Infineon Technologies Ag | Integrated switching arrangement comprises a metallization layer, a conducting pathway dielectric, a conducting pathway intermediate material, conducting connecting sections, dielectric, and connecting section intermediate material |
US7566964B2 (en) * | 2003-04-10 | 2009-07-28 | Agere Systems Inc. | Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures |
EP1793013B1 (en) * | 2005-12-05 | 2017-07-19 | Rohm and Haas Electronic Materials LLC | Metallization of dielectrics |
US8304863B2 (en) | 2010-02-09 | 2012-11-06 | International Business Machines Corporation | Electromigration immune through-substrate vias |
US8907483B2 (en) | 2012-10-10 | 2014-12-09 | Globalfoundries Inc. | Semiconductor device having a self-forming barrier layer at via bottom |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326511A (en) * | 1992-05-18 | 1993-12-10 | Oki Electric Ind Co Ltd | Manufacture method of semiconductor element |
KR0144956B1 (en) * | 1994-06-10 | 1998-08-17 | 김광호 | Forming method of wiring |
KR100243286B1 (en) * | 1997-03-05 | 2000-03-02 | 윤종용 | Method for manufacturing a semiconductor device |
US6136682A (en) * | 1997-10-20 | 2000-10-24 | Motorola Inc. | Method for forming a conductive structure having a composite or amorphous barrier layer |
US5882738A (en) * | 1997-12-19 | 1999-03-16 | Advanced Micro Devices, Inc. | Apparatus and method to improve electromigration performance by use of amorphous barrier layer |
US6870263B1 (en) * | 1998-03-31 | 2005-03-22 | Infineon Technologies Ag | Device interconnection |
US6181012B1 (en) * | 1998-04-27 | 2001-01-30 | International Business Machines Corporation | Copper interconnection structure incorporating a metal seed layer |
JP3221397B2 (en) * | 1998-05-21 | 2001-10-22 | 日本電気株式会社 | Method for manufacturing semiconductor device |
US6150268A (en) * | 1998-11-04 | 2000-11-21 | Advanced Micro Devices, Inc. | Barrier materials for metal interconnect |
US6184137B1 (en) * | 1998-11-25 | 2001-02-06 | Applied Materials, Inc. | Structure and method for improving low temperature copper reflow in semiconductor features |
JP2000183064A (en) * | 1998-12-16 | 2000-06-30 | Matsushita Electronics Industry Corp | Semiconductor device and manufacture thereof |
US6294836B1 (en) * | 1998-12-22 | 2001-09-25 | Cvc Products Inc. | Semiconductor chip interconnect barrier material and fabrication method |
US6380084B1 (en) * | 2000-10-02 | 2002-04-30 | Chartered Semiconductor Manufacturing Inc. | Method to form high performance copper damascene interconnects by de-coupling via and metal line filling |
-
2000
- 2000-11-18 US US09/715,702 patent/US6348732B1/en not_active Expired - Lifetime
-
2001
- 2001-10-04 WO PCT/US2001/031297 patent/WO2002041391A2/en active Application Filing
- 2001-10-04 AU AU2001296662A patent/AU2001296662A1/en not_active Abandoned
- 2001-11-16 TW TW090128436A patent/TW533486B/en not_active IP Right Cessation
- 2001-11-20 US US09/989,972 patent/US6583051B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2002041391A3 (en) | 2003-01-09 |
TW533486B (en) | 2003-05-21 |
US6583051B2 (en) | 2003-06-24 |
US20020061644A1 (en) | 2002-05-23 |
US6348732B1 (en) | 2002-02-19 |
WO2002041391A2 (en) | 2002-05-23 |
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