SG89321A1 - Semiconductor laser and a manufacturing method for the same - Google Patents

Semiconductor laser and a manufacturing method for the same

Info

Publication number
SG89321A1
SG89321A1 SG200001141A SG200001141A SG89321A1 SG 89321 A1 SG89321 A1 SG 89321A1 SG 200001141 A SG200001141 A SG 200001141A SG 200001141 A SG200001141 A SG 200001141A SG 89321 A1 SG89321 A1 SG 89321A1
Authority
SG
Singapore
Prior art keywords
manufacturing
same
semiconductor laser
laser
semiconductor
Prior art date
Application number
SG200001141A
Other languages
English (en)
Inventor
Fukuhisa Toshiya
Manno Masaya
Yoshikawa Akio
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of SG89321A1 publication Critical patent/SG89321A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
SG200001141A 1999-03-03 2000-03-02 Semiconductor laser and a manufacturing method for the same SG89321A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05502199A JP3521793B2 (ja) 1999-03-03 1999-03-03 半導体レーザの製造方法

Publications (1)

Publication Number Publication Date
SG89321A1 true SG89321A1 (en) 2002-06-18

Family

ID=12987026

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200001141A SG89321A1 (en) 1999-03-03 2000-03-02 Semiconductor laser and a manufacturing method for the same

Country Status (6)

Country Link
US (1) US6822989B1 (fr)
EP (1) EP1033796B1 (fr)
JP (1) JP3521793B2 (fr)
CN (1) CN1266299A (fr)
DE (1) DE60016486T2 (fr)
SG (1) SG89321A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6782023B2 (en) * 2000-03-15 2004-08-24 Rohm Co., Ltd. Semiconductor laser
JP2002033553A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2002374040A (ja) * 2001-06-15 2002-12-26 Sharp Corp 半導体レーザ素子およびその製造方法
US6977953B2 (en) * 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
CN1259760C (zh) 2001-08-31 2006-06-14 三井化学株式会社 半导体激光元件
CN102037575B (zh) * 2008-03-27 2013-04-10 宋俊午 发光元件及其制造方法
JP2011091108A (ja) * 2009-10-20 2011-05-06 Sumitomo Electric Ind Ltd 半導体レーザ
DE102020120703A1 (de) 2020-08-05 2022-02-10 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Diodenlaser mit Stromblende

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0385388A2 (fr) * 1989-02-28 1990-09-05 Omron Corporation Laser à semi-conducteur à guide d'ondes à nervures
EP0477013A2 (fr) * 1990-09-20 1992-03-25 Mitsubishi Denki Kabushiki Kaisha Méthode de fabrication d'un laser à semi-conducteur
US5395792A (en) * 1993-06-02 1995-03-07 Rohm Co., Ltd. Process for fabricating a semiconductor laser device

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783425A (en) * 1985-11-06 1988-11-08 Hitachi, Ltd. Fabrication process of semiconductor lasers
JPS62108591A (ja) * 1985-11-06 1987-05-19 Hitachi Ltd 半導体レ−ザの製造方法
JPS62186582A (ja) 1986-02-13 1987-08-14 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS62213189A (ja) * 1986-03-14 1987-09-19 Nec Corp 半導体レ−ザ
JP2585230B2 (ja) * 1986-09-16 1997-02-26 株式会社日立製作所 半導体レ−ザ装置
JPH0812928B2 (ja) 1988-12-06 1996-02-07 日本電気株式会社 半導体変調ドープ構造
JPH0327584A (ja) * 1989-07-14 1991-02-05 Rohm Co Ltd 半導体レーザの製造方法
US5144633A (en) * 1990-05-24 1992-09-01 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and manufacturing method thereof
JPH04144185A (ja) * 1990-10-04 1992-05-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2669139B2 (ja) 1990-10-24 1997-10-27 日本電気株式会社 半導体レーザ
US5270246A (en) 1991-06-18 1993-12-14 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor multi-layer film and semiconductor laser
JPH05175607A (ja) 1991-06-18 1993-07-13 Matsushita Electric Ind Co Ltd 半導体多層膜の形成方法および半導体レーザの製造方法
JPH05243667A (ja) * 1992-02-27 1993-09-21 Sanyo Electric Co Ltd 半導体レーザ装置
JP2975473B2 (ja) 1992-03-06 1999-11-10 シャープ株式会社 半導体レーザ素子
US5471494A (en) * 1992-04-08 1995-11-28 Rohm Co., Ltd. Method for selecting a self pulsating semiconductor laser
US5416790A (en) * 1992-11-06 1995-05-16 Sanyo Electric Co., Ltd. Semiconductor laser with a self-sustained pulsation
JP2536713B2 (ja) 1993-02-08 1996-09-18 日本電気株式会社 ＡｌＧａＩｎＰ半導体レ―ザ素子
US5646953A (en) * 1994-04-06 1997-07-08 Matsushita Electronics Corporation Semiconductor laser device
US6072817A (en) * 1995-03-31 2000-06-06 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical disk apparatus using the same
JPH098307A (ja) 1995-06-26 1997-01-10 Matsushita Electron Corp 半導体装置
JPH0983071A (ja) * 1995-09-08 1997-03-28 Rohm Co Ltd 半導体レーザ
DE69622277T2 (de) * 1995-09-18 2003-03-27 Hitachi, Ltd. Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung
WO1997013303A1 (fr) * 1995-09-29 1997-04-10 Matsushita Electric Industrial Co., Ltd. Laser a semi-conducteurs et disque optique l'utilisant
JPH09270563A (ja) 1996-02-01 1997-10-14 Sharp Corp 半導体レーザ素子およびその製造方法
US6055255A (en) 1996-02-01 2000-04-25 Sharp Kabushiki Kaisha Semiconductor laser device and method for producing the same
JP3039365B2 (ja) 1996-04-15 2000-05-08 日本電気株式会社 受信同期位置制御方式
JPH1098233A (ja) * 1996-09-25 1998-04-14 Rohm Co Ltd 半導体レーザおよびその製法
JPH11354884A (ja) * 1998-06-08 1999-12-24 Sumitomo Electric Ind Ltd 半導体レーザ及び半導体レーザの製造方法
JP2000164938A (ja) * 1998-11-27 2000-06-16 Sharp Corp 発光装置及び発光素子の実装方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0385388A2 (fr) * 1989-02-28 1990-09-05 Omron Corporation Laser à semi-conducteur à guide d'ondes à nervures
EP0477013A2 (fr) * 1990-09-20 1992-03-25 Mitsubishi Denki Kabushiki Kaisha Méthode de fabrication d'un laser à semi-conducteur
US5395792A (en) * 1993-06-02 1995-03-07 Rohm Co., Ltd. Process for fabricating a semiconductor laser device

Also Published As

Publication number Publication date
EP1033796B1 (fr) 2004-12-08
DE60016486D1 (de) 2005-01-13
EP1033796A2 (fr) 2000-09-06
JP3521793B2 (ja) 2004-04-19
US6822989B1 (en) 2004-11-23
DE60016486T2 (de) 2005-05-12
JP2000252586A (ja) 2000-09-14
CN1266299A (zh) 2000-09-13
EP1033796A3 (fr) 2002-05-02

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