SG87076A1 - Self-aligned precise high sheet rho resistor for mixed-signal application - Google Patents

Self-aligned precise high sheet rho resistor for mixed-signal application

Info

Publication number
SG87076A1
SG87076A1 SG200000136A SG200000136A SG87076A1 SG 87076 A1 SG87076 A1 SG 87076A1 SG 200000136 A SG200000136 A SG 200000136A SG 200000136 A SG200000136 A SG 200000136A SG 87076 A1 SG87076 A1 SG 87076A1
Authority
SG
Singapore
Prior art keywords
resistor
capacitor
dielectric
gate
layer
Prior art date
Application number
SG200000136A
Other languages
English (en)
Inventor
Kai Shao
Chu Shao-Fu Sanford
Lee Cerdin
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Publication of SG87076A1 publication Critical patent/SG87076A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Adjustable Resistors (AREA)
  • Laminated Bodies (AREA)
SG200000136A 1999-08-06 2000-01-11 Self-aligned precise high sheet rho resistor for mixed-signal application SG87076A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/368,859 US6156602A (en) 1999-08-06 1999-08-06 Self-aligned precise high sheet RHO register for mixed-signal application

Publications (1)

Publication Number Publication Date
SG87076A1 true SG87076A1 (en) 2002-03-19

Family

ID=23453064

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200000136A SG87076A1 (en) 1999-08-06 2000-01-11 Self-aligned precise high sheet rho resistor for mixed-signal application

Country Status (5)

Country Link
US (1) US6156602A (de)
EP (1) EP1075016B1 (de)
AT (1) ATE408894T1 (de)
DE (1) DE60040262D1 (de)
SG (1) SG87076A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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JP2001015611A (ja) * 1999-07-01 2001-01-19 Mitsubishi Electric Corp 半導体装置の製造方法
JP2001185628A (ja) * 1999-12-22 2001-07-06 Nec Corp 半導体装置及びその製造方法
US6548363B1 (en) * 2000-04-11 2003-04-15 Taiwan Semiconductor Manufacturing Company Method to reduce the gate induced drain leakage current in CMOS devices
US7217613B2 (en) * 2001-04-11 2007-05-15 Newport Fab, Llc Low cost fabrication of high resistivity resistors
US6830975B2 (en) * 2002-01-31 2004-12-14 Micron Technology, Inc. Method of forming field effect transistor comprising at least one of a conductive metal or metal compound in electrical connection with transistor gate semiconductor material
JP4108444B2 (ja) * 2002-10-31 2008-06-25 富士通株式会社 半導体装置の製造方法
US6727133B1 (en) * 2002-11-21 2004-04-27 Texas Instruments Incorporated Integrated circuit resistors in a high performance CMOS process
US6969646B2 (en) * 2003-02-10 2005-11-29 Chartered Semiconductor Manufacturing Ltd. Method of activating polysilicon gate structure dopants after offset spacer deposition
KR100593958B1 (ko) * 2003-11-12 2006-06-30 매그나칩 반도체 유한회사 반도체 소자의 저항 제조 방법
US6887748B1 (en) * 2004-02-10 2005-05-03 United Microelectronics Corp. Mixed-mode process
US7189635B2 (en) * 2004-09-17 2007-03-13 Hewlett-Packard Development Company, L.P. Reduction of a feature dimension in a nano-scale device
CN100409449C (zh) * 2005-04-27 2008-08-06 上海华虹Nec电子有限公司 多晶硅-绝缘层-多晶硅电容和高阻多晶硅器件的制作方法
KR100731087B1 (ko) * 2005-10-28 2007-06-22 동부일렉트로닉스 주식회사 바이씨모스 소자 및 그의 제조방법
KR100731054B1 (ko) * 2005-10-28 2007-06-22 동부일렉트로닉스 주식회사 전력용 반도체 소자 및 그의 제조방법
US7855422B2 (en) * 2006-05-31 2010-12-21 Alpha & Omega Semiconductor, Ltd. Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process
US8004060B2 (en) * 2007-11-29 2011-08-23 International Business Machines Corporation Metal gate compatible electrical antifuse
KR20100076256A (ko) * 2008-12-26 2010-07-06 주식회사 동부하이텍 Ｐｉｐ 커패시터의 제조 방법
JP5546298B2 (ja) * 2010-03-15 2014-07-09 セイコーインスツル株式会社 半導体回路装置の製造方法
KR20130086663A (ko) * 2012-01-26 2013-08-05 삼성전자주식회사 반도체 소자
KR102070094B1 (ko) * 2012-12-13 2020-01-29 삼성전자주식회사 저항 전극을 갖는 반도체 소자
CN106816433A (zh) * 2015-12-01 2017-06-09 无锡华润上华半导体有限公司 一种多晶硅高阻的制造方法
US10256233B2 (en) * 2017-05-26 2019-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Device including resistor-capacitor (RC) structure and method of making the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356826A (en) * 1992-08-07 1994-10-18 Yamaha Corporation Method of manufacturing semiconductor device provided with capacitor and resistor
US5489547A (en) * 1994-05-23 1996-02-06 Texas Instruments Incorporated Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient
US5543350A (en) * 1995-09-29 1996-08-06 Chartered Semiconductor Manufacturing Pte Ltd SRAM resistor tab doping by plug implant from buried contact

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472887A (en) * 1993-11-09 1995-12-05 Texas Instruments Incorporated Method of fabricating semiconductor device having high-and low-voltage MOS transistors
KR100209278B1 (ko) * 1995-12-30 1999-07-15 김영환 반도체 소자의 폴리레지스터 구조 및 그 제조방법
US5652174A (en) * 1996-05-20 1997-07-29 Taiwan Semiconductor Manufacturing Company Ltd. Unified stacked contact process for static random access memory (SRAM) having polysilicon load resistors
US5866451A (en) * 1996-05-28 1999-02-02 Taiwan Semiconductor Manufacturing Company Ltd Method of making a semiconductor device having 4t sram and mixed-mode capacitor in logic
US5605853A (en) * 1996-05-28 1997-02-25 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a semiconductor device having 4 transistor SRAM and floating gate memory cells
US5792681A (en) * 1997-01-15 1998-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Fabrication process for MOSFET devices and a reproducible capacitor structure
US5843815A (en) * 1997-01-15 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a MOSFET device, for an SRAM cell, using a self-aligned ion implanted halo region
US5918119A (en) * 1997-12-08 1999-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Process for integrating MOSFET devices, comprised of different gate insulator thicknesses, with a capacitor structure
JPH11312791A (ja) * 1998-04-30 1999-11-09 Fujitsu Ltd 半導体装置の製造方法及び半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356826A (en) * 1992-08-07 1994-10-18 Yamaha Corporation Method of manufacturing semiconductor device provided with capacitor and resistor
US5489547A (en) * 1994-05-23 1996-02-06 Texas Instruments Incorporated Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient
US5543350A (en) * 1995-09-29 1996-08-06 Chartered Semiconductor Manufacturing Pte Ltd SRAM resistor tab doping by plug implant from buried contact

Also Published As

Publication number Publication date
DE60040262D1 (de) 2008-10-30
EP1075016B1 (de) 2008-09-17
EP1075016A3 (de) 2004-07-21
ATE408894T1 (de) 2008-10-15
EP1075016A2 (de) 2001-02-07
US6156602A (en) 2000-12-05

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