SG83758A1 - Silicon on insulator thick oxide structure and process of manufacture - Google Patents

Silicon on insulator thick oxide structure and process of manufacture

Info

Publication number
SG83758A1
SG83758A1 SG9906260A SG1999006260A SG83758A1 SG 83758 A1 SG83758 A1 SG 83758A1 SG 9906260 A SG9906260 A SG 9906260A SG 1999006260 A SG1999006260 A SG 1999006260A SG 83758 A1 SG83758 A1 SG 83758A1
Authority
SG
Singapore
Prior art keywords
silicon
manufacture
thick oxide
oxide structure
insulator thick
Prior art date
Application number
SG9906260A
Other languages
English (en)
Inventor
J Hargrove Michael
M Pelella Mario
H Voldman Steven
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG83758A1 publication Critical patent/SG83758A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
SG9906260A 1999-01-08 1999-12-09 Silicon on insulator thick oxide structure and process of manufacture SG83758A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/227,695 US6323522B1 (en) 1999-01-08 1999-01-08 Silicon on insulator thick oxide structure and process of manufacture

Publications (1)

Publication Number Publication Date
SG83758A1 true SG83758A1 (en) 2001-10-16

Family

ID=22854114

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9906260A SG83758A1 (en) 1999-01-08 1999-12-09 Silicon on insulator thick oxide structure and process of manufacture

Country Status (6)

Country Link
US (2) US6323522B1 (zh)
JP (1) JP3537035B2 (zh)
KR (1) KR100351648B1 (zh)
CN (1) CN1152436C (zh)
SG (1) SG83758A1 (zh)
TW (1) TW457585B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244469A (ja) * 2000-03-02 2001-09-07 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JP2002305254A (ja) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6621288B1 (en) * 2001-05-23 2003-09-16 Advanced Micro Devices, Inc. Timing margin alteration via the insulator of a SOI die
US6414335B1 (en) * 2001-05-23 2002-07-02 Advanced Micro Devices, Inc. Selective state change analysis of a SOI die
US7166876B2 (en) * 2004-04-28 2007-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. MOSFET with electrostatic discharge protection structure and method of fabrication
US7084462B1 (en) * 2005-04-15 2006-08-01 International Business Machines Corporation Parallel field effect transistor structure having a body contact
JP5586819B2 (ja) * 2006-04-06 2014-09-10 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US20080246062A1 (en) * 2007-03-26 2008-10-09 Elizabeth Brauer Semiconductor based controllable high resistance device
US8208233B2 (en) * 2008-03-18 2012-06-26 Mediatek Inc. ESD protection circuit and method thereof
US8669146B2 (en) 2011-01-13 2014-03-11 International Business Machines Corporation Semiconductor structures with thinned junctions and methods of manufacture
US8710908B2 (en) 2011-01-28 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump and method of biasing deep N-well in charge pump
US8749223B2 (en) * 2011-06-22 2014-06-10 Nxp B.V. Galvanic isolation device and method
CN117176098A (zh) * 2023-11-01 2023-12-05 上海安其威微电子科技有限公司 限幅电路和无线收发装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4423431A (en) * 1979-12-24 1983-12-27 Fujitsu Limited Semiconductor integrated circuit device providing a protection circuit
EP0617313A2 (en) * 1993-03-08 1994-09-28 Seiko Instruments Inc. Light valve device with a protection circuit including a semiconductor device
US5811857A (en) * 1996-10-22 1998-09-22 International Business Machines Corporation Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications

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Publication number Priority date Publication date Assignee Title
DE2531846C2 (de) 1974-07-16 1989-12-14 Nippon Electric Co., Ltd., Tokyo Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor
US4408245A (en) 1981-12-28 1983-10-04 Rca Corporation Protection and anti-floating network for insulated-gate field-effect circuitry
US4626882A (en) 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
JP2812388B2 (ja) 1988-01-18 1998-10-22 富士通株式会社 Ｓｏｉ半導体装置の製造方法
US4989057A (en) 1988-05-26 1991-01-29 Texas Instruments Incorporated ESD protection for SOI circuits
US4946799A (en) 1988-07-08 1990-08-07 Texas Instruments, Incorporated Process for making high performance silicon-on-insulator transistor with body node to source node connection
US5144390A (en) 1988-09-02 1992-09-01 Texas Instruments Incorporated Silicon-on insulator transistor with internal body node to source node connection
US5023692A (en) 1989-12-07 1991-06-11 Harris Semiconductor Patents, Inc. Power MOSFET transistor circuit
US5159518A (en) 1990-01-17 1992-10-27 Vlsi Technology, Inc. Input protection circuit for CMOS devices
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
JPH0473970A (ja) 1990-07-16 1992-03-09 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
GB9115699D0 (en) 1991-07-19 1991-09-04 Philips Electronic Associated An overvoltage protected semiconductor switch
KR0169157B1 (ko) 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
US5382818A (en) 1993-12-08 1995-01-17 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode
US5489792A (en) * 1994-04-07 1996-02-06 Regents Of The University Of California Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
JP2770784B2 (ja) 1995-05-31 1998-07-02 日本電気株式会社 シリコン・オン・インシュレータ半導体装置
US5708288A (en) 1995-11-02 1998-01-13 Motorola, Inc. Thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection and method
US5597747A (en) * 1995-12-15 1997-01-28 Industrial Technology Research Institute Method of making inverted thin film transistor using backsick exposure and negative photoresist
US5726844A (en) 1996-04-01 1998-03-10 Motorola, Inc. Protection circuit and a circuit for a semiconductor-on-insulator device
US5683918A (en) 1996-04-01 1997-11-04 Motorola, Inc. Method of making semiconductor-on-insulator device with closed-gate electrode
JPH09282552A (ja) * 1996-04-17 1997-10-31 Sanyo Electric Co Ltd コーヒー飲料の製造装置
US5773326A (en) 1996-09-19 1998-06-30 Motorola, Inc. Method of making an SOI integrated circuit with ESD protection
US5952695A (en) * 1997-03-05 1999-09-14 International Business Machines Corporation Silicon-on-insulator and CMOS-on-SOI double film structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4423431A (en) * 1979-12-24 1983-12-27 Fujitsu Limited Semiconductor integrated circuit device providing a protection circuit
EP0617313A2 (en) * 1993-03-08 1994-09-28 Seiko Instruments Inc. Light valve device with a protection circuit including a semiconductor device
US5811857A (en) * 1996-10-22 1998-09-22 International Business Machines Corporation Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications

Also Published As

Publication number Publication date
CN1260597A (zh) 2000-07-19
US6426244B2 (en) 2002-07-30
TW457585B (en) 2001-10-01
US6323522B1 (en) 2001-11-27
KR20000053384A (ko) 2000-08-25
JP3537035B2 (ja) 2004-06-14
US20010041393A1 (en) 2001-11-15
JP2000208779A (ja) 2000-07-28
KR100351648B1 (ko) 2002-09-11
CN1152436C (zh) 2004-06-02

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