SG77227A1 - Semiconductor device its manufacturing method and substrate for manufacturing a semiconductor device - Google Patents

Semiconductor device its manufacturing method and substrate for manufacturing a semiconductor device

Info

Publication number
SG77227A1
SG77227A1 SG1999001313A SG1999001313A SG77227A1 SG 77227 A1 SG77227 A1 SG 77227A1 SG 1999001313 A SG1999001313 A SG 1999001313A SG 1999001313 A SG1999001313 A SG 1999001313A SG 77227 A1 SG77227 A1 SG 77227A1
Authority
SG
Singapore
Prior art keywords
manufacturing
semiconductor device
substrate
semiconductor
Prior art date
Application number
SG1999001313A
Other languages
English (en)
Inventor
Toshimasa Kobayashi
Tojo Tsuyoshi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SG77227A1 publication Critical patent/SG77227A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Dicing (AREA)
  • Led Devices (AREA)
SG1999001313A 1998-03-06 1999-03-06 Semiconductor device its manufacturing method and substrate for manufacturing a semiconductor device SG77227A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05527298A JP3822976B2 (ja) 1998-03-06 1998-03-06 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
SG77227A1 true SG77227A1 (en) 2000-12-19

Family

ID=12993975

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1999001313A SG77227A1 (en) 1998-03-06 1999-03-06 Semiconductor device its manufacturing method and substrate for manufacturing a semiconductor device

Country Status (7)

Country Link
US (3) US6278173B1 (ja)
JP (1) JP3822976B2 (ja)
KR (1) KR100681987B1 (ja)
CN (1) CN100541815C (ja)
MY (1) MY122220A (ja)
SG (1) SG77227A1 (ja)
TW (1) TW437134B (ja)

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JP3912044B2 (ja) * 2001-06-06 2007-05-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP2003017791A (ja) 2001-07-03 2003-01-17 Sharp Corp 窒化物半導体素子及びこの窒化物半導体素子の製造方法
GB0124427D0 (en) * 2001-10-11 2001-12-05 Eblana Photonics Ltd A method of manufacturing a semiconductor device
JP3878868B2 (ja) 2002-03-01 2007-02-07 シャープ株式会社 ＧａＮ系レーザ素子
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JP4948307B2 (ja) * 2006-07-31 2012-06-06 三洋電機株式会社 半導体レーザ素子およびその製造方法
JP4832221B2 (ja) * 2006-09-01 2011-12-07 パナソニック株式会社 半導体レーザ装置の製造方法
WO2008031280A1 (en) * 2006-09-13 2008-03-20 Helio Optoelectronics Corporation Light emitting diode structure
KR101262386B1 (ko) * 2006-09-25 2013-05-08 엘지이노텍 주식회사 질화물 반도체 발광소자의 제조 방법
JP5277762B2 (ja) * 2007-07-18 2013-08-28 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法及び窒化物半導体レーザ素子
US7838316B2 (en) * 2007-07-18 2010-11-23 Nichia Corporation Method for manufacturing a nitride semiconductor laser element and a nitride semiconductor laser element
JP2009081428A (ja) * 2007-09-03 2009-04-16 Rohm Co Ltd 半導体発光素子およびその製造方法
KR100957437B1 (ko) * 2007-12-17 2010-05-11 삼성엘이디 주식회사 반도체 레이저 다이오드의 분리방법
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP5658433B2 (ja) * 2009-02-16 2015-01-28 シャープ株式会社 窒化物半導体ウェハ及び窒化物半導体素子の製造方法
KR101064006B1 (ko) * 2009-03-03 2011-09-08 엘지이노텍 주식회사 발광소자
KR20120037980A (ko) * 2009-07-09 2012-04-20 더 리전츠 오브 더 유니버시티 오브 캘리포니아 무극성 또는 반극성 (Ｇａ,Ａｌ,Ｉｎ,Ｂ)Ｎ 기판들 상에 성장된 (Ｇａ,Ａｌ,Ｉｎ,Ｂ)Ｎ 레이저 다이오드들의 거울 패시트 클리빙 수율을 개선하기 위한 구조
JP2011119630A (ja) * 2009-10-30 2011-06-16 Sony Corp 光装置
JP5289360B2 (ja) 2010-03-08 2013-09-11 株式会社東芝 半導体レーザ装置
US8675704B2 (en) * 2010-04-29 2014-03-18 Sri International Single ridge N-P-N diode laser
KR101109231B1 (ko) * 2010-07-08 2012-01-30 삼성전기주식회사 인쇄회로기판 및 이를 포함하는 진동모터
JP5803457B2 (ja) * 2011-09-08 2015-11-04 三菱電機株式会社 レーザダイオード素子の製造方法
JP5451724B2 (ja) * 2011-12-08 2014-03-26 ソニー株式会社 半導体レーザ素子の製造方法
CN104185710B (zh) 2012-03-13 2016-04-13 德尔塔阀门公司 具有溢出保护的马桶
JP5624166B2 (ja) * 2013-02-05 2014-11-12 シャープ株式会社 窒化物半導体ウェハ
US9488777B2 (en) 2013-09-11 2016-11-08 Oracle International Corporation Back-side etching and cleaving of substrates
DE102013220641A1 (de) 2013-10-14 2015-04-16 Osram Opto Semiconductors Gmbh Halbleiterlaser mit einseitig verbreiterter Ridgestruktur
US9356422B2 (en) * 2014-02-26 2016-05-31 Applied Optoelectronics, Inc. Scribe etch process for semiconductor laser chip manufacturing
JP6402549B2 (ja) * 2014-09-10 2018-10-10 日亜化学工業株式会社 半導体レーザ素子及びその製造方法、並びに半導体レーザ装置の製造方法
US20180145206A1 (en) * 2015-07-07 2018-05-24 Mitsubishi Electric Corporation Method of manufacturing semiconductor device
JP6636357B2 (ja) * 2016-02-23 2020-01-29 スタンレー電気株式会社 半導体発光素子及びその製造方法
CN112154533A (zh) * 2018-05-17 2020-12-29 加利福尼亚大学董事会 划分一个或多个装置的条的方法
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Also Published As

Publication number Publication date
US6482666B1 (en) 2002-11-19
US6455342B2 (en) 2002-09-24
TW437134B (en) 2001-05-28
CN1231533A (zh) 1999-10-13
MY122220A (en) 2006-03-31
JPH11251265A (ja) 1999-09-17
KR100681987B1 (ko) 2007-02-15
KR19990077668A (ko) 1999-10-25
US6278173B1 (en) 2001-08-21
CN100541815C (zh) 2009-09-16
JP3822976B2 (ja) 2006-09-20
US20010013608A1 (en) 2001-08-16

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