SG71094A1 - Thin film formation using laser beam heating to separate layers - Google Patents

Thin film formation using laser beam heating to separate layers

Info

Publication number
SG71094A1
SG71094A1 SG1998000572A SG1998000572A SG71094A1 SG 71094 A1 SG71094 A1 SG 71094A1 SG 1998000572 A SG1998000572 A SG 1998000572A SG 1998000572 A SG1998000572 A SG 1998000572A SG 71094 A1 SG71094 A1 SG 71094A1
Authority
SG
Singapore
Prior art keywords
layer
porous
substrate
thin film
laser beam
Prior art date
Application number
SG1998000572A
Other languages
English (en)
Inventor
Masaaki Iwane
Takao Yonehara
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG71094A1 publication Critical patent/SG71094A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Glass Compositions (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
SG1998000572A 1997-03-26 1998-03-18 Thin film formation using laser beam heating to separate layers SG71094A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7369197 1997-03-26

Publications (1)

Publication Number Publication Date
SG71094A1 true SG71094A1 (en) 2000-03-21

Family

ID=13525505

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998000572A SG71094A1 (en) 1997-03-26 1998-03-18 Thin film formation using laser beam heating to separate layers

Country Status (10)

Country Link
US (2) US6133112A (zh)
EP (1) EP0867920B1 (zh)
KR (1) KR100345354B1 (zh)
CN (1) CN1112721C (zh)
AT (1) ATE275288T1 (zh)
AU (1) AU731697B2 (zh)
CA (1) CA2233028C (zh)
DE (1) DE69825928T2 (zh)
SG (1) SG71094A1 (zh)
TW (1) TW398038B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148119B1 (en) * 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
SG70141A1 (en) 1997-12-26 2000-01-25 Canon Kk Sample separating apparatus and method and substrate manufacturing method
JP3500063B2 (ja) * 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
TW484184B (en) * 1998-11-06 2002-04-21 Canon Kk Sample separating apparatus and method, and substrate manufacturing method
JP4313874B2 (ja) * 1999-02-02 2009-08-12 キヤノン株式会社 基板の製造方法
US6602767B2 (en) 2000-01-27 2003-08-05 Canon Kabushiki Kaisha Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery
JP3982218B2 (ja) * 2001-02-07 2007-09-26 ソニー株式会社 半導体装置およびその製造方法
DE102004060363B4 (de) * 2004-12-15 2010-12-16 Austriamicrosystems Ag Halbleitersubstrat mit pn-Übergang und Verfahren zur Herstellung
US7429521B2 (en) * 2006-03-30 2008-09-30 Intel Corporation Capillary underfill of stacked wafers
DE102007021991B4 (de) * 2007-05-10 2015-03-26 Infineon Technologies Austria Ag Verfahren zum Herstellen eines Halbleiterbauelements durch Ausbilden einer porösen Zwischenschicht
US9409383B2 (en) * 2008-12-22 2016-08-09 Apple Inc. Layer-specific energy distribution delamination
US8242591B2 (en) * 2009-08-13 2012-08-14 International Business Machines Corporation Electrostatic chucking of an insulator handle substrate
DE102009053262A1 (de) * 2009-11-13 2011-05-19 Institut Für Solarenergieforschung Gmbh Verfahren zum Bilden von dünnen Halbleiterschichtsubstraten sowie Verfahren zum Herstellen eines Halbleiterbauelements, insbesondere einer Solarzelle, mit einem solchen Halbleiterschichtsubstrat
US8945344B2 (en) * 2012-07-20 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods of separating bonded wafers
US9721896B2 (en) * 2015-09-11 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnection structure, fabricating method thereof, and semiconductor device using the same
WO2017223296A1 (en) * 2016-06-24 2017-12-28 Crystal Solar Inc. Semiconductor layer separation from single crystal silicon substrate by infrared irradiation of porous silicon separation layer
DE102019114328B4 (de) * 2018-05-31 2022-03-03 Rohm Co. Ltd Halbleitersubstratstruktur und leistungshalbleitervorrichtung

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE143981C (zh) *
US4237150A (en) * 1979-04-18 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Method of producing hydrogenated amorphous silicon film
US4392011A (en) * 1980-04-30 1983-07-05 Rca Corporation Solar cell structure incorporating a novel single crystal silicon material
EP0457998B1 (en) * 1990-05-25 1994-01-26 International Business Machines Corporation Method and apparatus for batch cleaving semiconductor wafers and for coating the cleaved facets
KR950014609B1 (ko) * 1990-08-03 1995-12-11 캐논 가부시끼가이샤 반도체부재 및 반도체부재의 제조방법
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5371564A (en) * 1992-03-09 1994-12-06 Nikon Corporation Shutter device in a camera
TW330313B (en) * 1993-12-28 1998-04-21 Canon Kk A semiconductor substrate and process for producing same
FR2715501B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
JP3257580B2 (ja) * 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
FR2725074B1 (fr) 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
JP2689935B2 (ja) * 1995-02-01 1997-12-10 日本電気株式会社 半導体薄膜形成方法
JP3381443B2 (ja) * 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびsoi基板の製造方法
US6103598A (en) * 1995-07-13 2000-08-15 Canon Kabushiki Kaisha Process for producing semiconductor substrate
JPH0929472A (ja) * 1995-07-14 1997-02-04 Hitachi Ltd 割断方法、割断装置及びチップ材料
CN1132223C (zh) 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
JPH09115833A (ja) * 1995-10-07 1997-05-02 Hyundai Electron Ind Co Ltd 半導体素子のポリシリコン膜製造方法
WO1997029509A1 (en) * 1996-02-09 1997-08-14 Philips Electronics N.V. Laser separation of semiconductor elements formed in a wafer of semiconductor material
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US6054363A (en) 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
SG65697A1 (en) 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
SG55413A1 (en) 1996-11-15 1998-12-21 Method Of Manufacturing Semico Method of manufacturing semiconductor article
SG54593A1 (en) * 1996-11-15 1998-11-16 Canon Kk Method of manufacturing semiconductor article
CA2225131C (en) 1996-12-18 2002-01-01 Canon Kabushiki Kaisha Process for producing semiconductor article
US6146979A (en) 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process

Also Published As

Publication number Publication date
AU731697B2 (en) 2001-04-05
ATE275288T1 (de) 2004-09-15
CN1112721C (zh) 2003-06-25
TW398038B (en) 2000-07-11
CN1195880A (zh) 1998-10-14
KR19980080550A (ko) 1998-11-25
DE69825928D1 (de) 2004-10-07
AU5951998A (en) 1998-10-01
US6534383B1 (en) 2003-03-18
EP0867920A2 (en) 1998-09-30
KR100345354B1 (ko) 2002-09-18
US6133112A (en) 2000-10-17
DE69825928T2 (de) 2005-09-08
CA2233028C (en) 2002-08-20
EP0867920B1 (en) 2004-09-01
CA2233028A1 (en) 1998-09-26
EP0867920A3 (en) 1999-06-16

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