SG68633A1 - Four bit pre-fetch sdram column select architecture - Google Patents

Four bit pre-fetch sdram column select architecture

Info

Publication number
SG68633A1
SG68633A1 SG1997003497A SG1997003497A SG68633A1 SG 68633 A1 SG68633 A1 SG 68633A1 SG 1997003497 A SG1997003497 A SG 1997003497A SG 1997003497 A SG1997003497 A SG 1997003497A SG 68633 A1 SG68633 A1 SG 68633A1
Authority
SG
Singapore
Prior art keywords
fetch
column select
bit pre
select architecture
sdram column
Prior art date
Application number
SG1997003497A
Other languages
English (en)
Inventor
Masayuki Nakamura
Jeffrey E Koelling
Paulette Thurston
Hugh P Mcadams
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of SG68633A1 publication Critical patent/SG68633A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
SG1997003497A 1996-09-23 1997-09-23 Four bit pre-fetch sdram column select architecture SG68633A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/717,540 US5802005A (en) 1996-09-23 1996-09-23 Four bit pre-fetch sDRAM column select architecture

Publications (1)

Publication Number Publication Date
SG68633A1 true SG68633A1 (en) 1999-11-16

Family

ID=24882436

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003497A SG68633A1 (en) 1996-09-23 1997-09-23 Four bit pre-fetch sdram column select architecture

Country Status (6)

Country Link
US (1) US5802005A (ja)
EP (1) EP0831493A3 (ja)
JP (1) JPH10125063A (ja)
KR (1) KR100566843B1 (ja)
SG (1) SG68633A1 (ja)
TW (1) TW391003B (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796673A (en) 1994-10-06 1998-08-18 Mosaid Technologies Incorporated Delay locked loop implementation in a synchronous dynamic random access memory
US5953278A (en) * 1996-07-11 1999-09-14 Texas Instruments Incorporated Data sequencing and registering in a four bit pre-fetch SDRAM
EP0818787A3 (en) * 1996-07-11 1999-08-25 Texas Instruments Inc. Improvements in or relating to semiconductor devices
US5991850A (en) * 1996-08-15 1999-11-23 Micron Technology, Inc. Synchronous DRAM modules including multiple clock out signals for increasing processing speed
US5966343A (en) * 1997-01-02 1999-10-12 Texas Instruments Incorporated Variable latency memory circuit
USRE40172E1 (en) * 1998-05-25 2008-03-25 Hynix Semiconductor, Inc. Multi-bank testing apparatus for a synchronous dram
KR100303923B1 (ko) * 1998-05-25 2001-11-22 박종섭 싱크로너스디램에서의멀티뱅크테스트장치
US6240047B1 (en) 1998-07-06 2001-05-29 Texas Instruments Incorporated Synchronous dynamic random access memory with four-bit data prefetch
KR100308119B1 (ko) * 1998-11-24 2001-10-20 김영환 카스(CAS)레이턴시(Latency)제어회로
US6205062B1 (en) * 1998-11-13 2001-03-20 Hyundai Electronics Industries Co. Ltd. CAS latency control circuit
US6081479A (en) * 1999-06-15 2000-06-27 Infineon Technologies North America Corp. Hierarchical prefetch for semiconductor memories
JP2001053243A (ja) * 1999-08-06 2001-02-23 Hitachi Ltd 半導体記憶装置とメモリモジュール
US6404694B2 (en) * 1999-08-16 2002-06-11 Hitachi, Ltd. Semiconductor memory device with address comparing functions
US7003643B1 (en) 2001-04-16 2006-02-21 Micron Technology, Inc. Burst counter controller and method in a memory device operable in a 2-bit prefetch mode
US6775759B2 (en) * 2001-12-07 2004-08-10 Micron Technology, Inc. Sequential nibble burst ordering for data
KR100468719B1 (ko) * 2002-01-11 2005-01-29 삼성전자주식회사 Ｎ 비트 프리페치 방식과 2ｎ 버스트 길이를 지원할 수있는 반도체 메모리 장치
GB2391336B (en) 2002-04-09 2005-10-26 Micron Technology Inc Method and system for local memory addressing in single instruction, multiple data computer system
KR100498466B1 (ko) * 2002-11-30 2005-07-01 삼성전자주식회사 개선된 데이터 기입 제어 회로를 가지는 4비트 프리페치방식 ｆｃｒａｍ 및 이에 대한 데이터 마스킹 방법
US20040194500A1 (en) * 2003-04-03 2004-10-07 Broadway Entertainment, Inc. Article of jewelry
TWI779069B (zh) * 2017-07-30 2022-10-01 埃拉德 希提 具有以記憶體為基礎的分散式處理器架構的記憶體晶片

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960003526B1 (ko) * 1992-10-02 1996-03-14 삼성전자주식회사 반도체 메모리장치
DE69114345T2 (de) * 1990-03-28 1996-05-23 Nippon Electric Co Halbleiterspeichereinrichtung.
JPH0696582A (ja) * 1990-09-17 1994-04-08 Texas Instr Inc <Ti> メモリアレイアーキテクチャ
JPH04362592A (ja) 1991-06-08 1992-12-15 Hitachi Ltd 半導体記憶装置
JP3476231B2 (ja) * 1993-01-29 2003-12-10 三菱電機エンジニアリング株式会社 同期型半導体記憶装置および半導体記憶装置
JP3304531B2 (ja) * 1993-08-24 2002-07-22 富士通株式会社 半導体記憶装置
JP3099931B2 (ja) * 1993-09-29 2000-10-16 株式会社東芝 半導体装置
US5517442A (en) * 1995-03-13 1996-05-14 International Business Machines Corporation Random access memory and an improved bus arrangement therefor

Also Published As

Publication number Publication date
US5802005A (en) 1998-09-01
TW391003B (en) 2000-05-21
JPH10125063A (ja) 1998-05-15
KR19980024859A (ko) 1998-07-06
EP0831493A3 (en) 2005-12-14
KR100566843B1 (ko) 2006-10-24
EP0831493A2 (en) 1998-03-25

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