SG65569A1 - Method of deposition - Google Patents

Method of deposition

Info

Publication number
SG65569A1
SG65569A1 SG1996004794A SG1996004794A SG65569A1 SG 65569 A1 SG65569 A1 SG 65569A1 SG 1996004794 A SG1996004794 A SG 1996004794A SG 1996004794 A SG1996004794 A SG 1996004794A SG 65569 A1 SG65569 A1 SG 65569A1
Authority
SG
Singapore
Prior art keywords
compound
deposit
residue
integrated circuits
manufacture
Prior art date
Application number
SG1996004794A
Other languages
English (en)
Inventor
James Thomson
James Cairns
Original Assignee
Univ Dundee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB929224233A external-priority patent/GB9224233D0/en
Priority claimed from GB939306446A external-priority patent/GB9306446D0/en
Priority claimed from GB939317750A external-priority patent/GB9317750D0/en
Application filed by Univ Dundee filed Critical Univ Dundee
Publication of SG65569A1 publication Critical patent/SG65569A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemically Coating (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
SG1996004794A 1992-11-19 1993-11-19 Method of deposition SG65569A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB929224233A GB9224233D0 (en) 1992-11-19 1992-11-19 Photomask
GB939306446A GB9306446D0 (en) 1993-03-27 1993-03-27 Photomask
GB939317750A GB9317750D0 (en) 1993-08-26 1993-08-26 Photomask

Publications (1)

Publication Number Publication Date
SG65569A1 true SG65569A1 (en) 1999-06-22

Family

ID=27266467

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996004794A SG65569A1 (en) 1992-11-19 1993-11-19 Method of deposition

Country Status (9)

Country Link
US (2) US5821017A (de)
EP (1) EP0670055B1 (de)
JP (1) JP3416134B2 (de)
AT (1) ATE153147T1 (de)
AU (1) AU5531294A (de)
CA (1) CA2149645A1 (de)
DE (1) DE69310763T2 (de)
SG (1) SG65569A1 (de)
WO (1) WO1994011787A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3540047B2 (ja) * 1995-03-31 2004-07-07 株式会社島津製作所 微細パターン作成方法
DE19618447A1 (de) * 1996-05-08 1997-11-20 Studiengesellschaft Kohle Mbh Lithographisches Verfahren zur Erzeugung von Nanostrukturen auf Oberflächen
RU2129320C1 (ru) * 1998-05-22 1999-04-20 Гурович Борис Аронович Способ формирования проводящей структуры
DE19934089A1 (de) * 1999-07-19 2001-01-25 Univ Schiller Jena Verfahren zur Erzeugung elektrisch leitender Bereiche in mehrkomponentigen Materialien
US7427529B2 (en) * 2000-06-06 2008-09-23 Simon Fraser University Deposition of permanent polymer structures for OLED fabrication
US7074640B2 (en) 2000-06-06 2006-07-11 Simon Fraser University Method of making barrier layers
US7067346B2 (en) * 2000-06-06 2006-06-27 Simon Foster University Titanium carboxylate films for use in semiconductor processing
EP1305824A4 (de) 2000-06-06 2007-07-25 Univ Fraser Simon Verfahren zur herstellung elektronischer materialien
US6786978B2 (en) * 2000-08-03 2004-09-07 Texas Instruments Incorporated Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
GB0103495D0 (en) * 2001-02-13 2001-03-28 Univ Dundee Methods of preparing organmetallic compounds and novel organmetallic dimers
US6777036B2 (en) 2001-06-06 2004-08-17 Simon Fraser University Method for the deposition of materials from mesomorphous films
US20050103272A1 (en) * 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
KR100878236B1 (ko) * 2002-06-12 2009-01-13 삼성전자주식회사 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법
CN1317424C (zh) * 2003-11-25 2007-05-23 中国科学院化学研究所 微波辅助镀金的制备方法
US7294449B1 (en) 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom
FR2894691B1 (fr) * 2005-12-13 2008-01-18 Commissariat Energie Atomique Procede de fabrication de masque lithographique en reflexion et masque issu du procede
US8802346B2 (en) 2008-08-07 2014-08-12 Pryog, Llc Metal compositions and methods of making same
US8965159B1 (en) 2013-11-07 2015-02-24 International Business Machines Corporation Implementing twisted pair waveguide for electronic substrates
KR102352740B1 (ko) * 2015-04-30 2022-01-18 삼성디스플레이 주식회사 마스크의 제조 방법 및 표시 장치의 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4444801A (en) * 1981-01-14 1984-04-24 Hitachi, Ltd. Method and apparatus for correcting transparent defects on a photomask
US4714627A (en) * 1984-11-29 1987-12-22 Ontario Development Corp. Method of gold deposition using volatile organogold complexes
US5230970A (en) * 1985-05-20 1993-07-27 At&T Bell Laboratories Method of forming metal regions
US4869930A (en) * 1987-07-10 1989-09-26 International Business Machines Corporation Method for preparing substrates for deposition of metal seed from an organometallic vapor for subsequent electroless metallization
US4888204A (en) * 1988-09-12 1989-12-19 Hughes Aircraft Company Photochemical deposition of high purity gold films
US5104481A (en) * 1988-09-28 1992-04-14 Lasa Industries, Inc. Method for fabricating laser generated I.C. masks
DE3841643C2 (de) * 1988-12-10 1999-07-01 Merck Patent Gmbh Metallorganische Verbindungen und deren Verwendung
US5169579A (en) * 1989-12-04 1992-12-08 Board Of Regents, The University Of Texas System Catalyst and plasma assisted nucleation and renucleation of gas phase selective laser deposition
US5104684A (en) * 1990-05-25 1992-04-14 Massachusetts Institute Of Technology Ion beam induced deposition of metals
JPH0799791B2 (ja) * 1992-04-15 1995-10-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 透明基板上の回路ライン接続方法

Also Published As

Publication number Publication date
JP3416134B2 (ja) 2003-06-16
US5821017A (en) 1998-10-13
EP0670055A1 (de) 1995-09-06
WO1994011787A1 (en) 1994-05-26
DE69310763T2 (de) 1997-12-11
AU5531294A (en) 1994-06-08
US6071676A (en) 2000-06-06
DE69310763D1 (de) 1997-06-19
JPH08507870A (ja) 1996-08-20
CA2149645A1 (en) 1994-05-26
EP0670055B1 (de) 1997-05-14
ATE153147T1 (de) 1997-05-15

Similar Documents

Publication Publication Date Title
SG65569A1 (en) Method of deposition
TW342515B (en) Process for making a field emitter cathode using a particulate field emitter material
MY112282A (en) Ph adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
NO20004651L (no) FremgangsmÕte for beskyttelse av et metallisk substrat mot korrosjon
ES2144663T3 (es) Deposicion de oxido de cromo a partir de una solucion de cromo trivalente.
WO2001051276A3 (en) Fabrication of metallic microstructures via exposure of photosensitive composition
DE69805618T2 (de) Verfahren zur herstellung von nichthaftendem diamantartigem nanokomposit
DE59308899D1 (de) Antireflexschicht und verfahren zur lithografischen strukturierung einer schicht
EP0647353A1 (de) Chemische abscheidung aus der gasphase mittels eines einzigen metallorganischen ausgangstoffs.
KR960019584A (ko) 화학 증착에 의해 증착된 개선된 티탄 질화물 층 및 그 제조 방법
DE69304819D1 (de) Verfahren zur Herstellung einer Silizium-enthaltenden Schicht auf ein metallisches Substrat sowie Anti-Korrosionsbehandlung
CA2197973A1 (en) Process for surface-treating body made of metal
AU643350B2 (en) Substrate of improved plasma sprayed surface morphology
KR960016231B1 (en) Semiconductor metal wire forming method
MY107409A (en) Process for forming deposited film and process for producing semiconductor device.
MY110288A (en) Process for forming deposited film and process for preparing semiconductor device.
IE55640B1 (en) Process for depositing metallic copper
EP0160202A3 (de) Abscheidung von Überzügen mittels eines Mikrowellenplasmas und die dadurch hergestellten Überzüge
ATE115648T1 (de) Verfahren zur abscheidung einer kupfer enthaltenden schicht ii.
ATE156866T1 (de) Verfahren zur abscheidung einer dünnen schicht auf einem substrat durch zeitverzögertes kaltes stickstoffplasma
KR100404171B1 (ko) 엔이에이 성질을 갖는 실리콘 표면의 패턴 형성방법
ATE107969T1 (de) Verfahren zur abscheidung einer kupfer enthaltenden schicht i.
EP0989446A3 (de) Verfahren zur Herstellung einer nichtlinearen optischen Dünnschicht
AU4604389A (en) Composition and process for coating metallic surfaces
ES2029426A6 (es) Obtencion de una fuente atomica de iones metalicos produciendo una fusion superficial por medio de un campo electrico.