SG55369A1 - Inorganic filler epoxy resin composition and semiconductor device - Google Patents

Inorganic filler epoxy resin composition and semiconductor device

Info

Publication number
SG55369A1
SG55369A1 SG1997003167A SG1997003167A SG55369A1 SG 55369 A1 SG55369 A1 SG 55369A1 SG 1997003167 A SG1997003167 A SG 1997003167A SG 1997003167 A SG1997003167 A SG 1997003167A SG 55369 A1 SG55369 A1 SG 55369A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
resin composition
epoxy resin
inorganic filler
filler epoxy
Prior art date
Application number
SG1997003167A
Other languages
English (en)
Inventor
Horiaki Higuchi
Takaaki Fukumoto
Toshio Shiobara
Eiichi Asano
Kazutoshi Tomiyoshi
Original Assignee
Mitsubishi Electric Corp
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Shinetsu Chemical Co filed Critical Mitsubishi Electric Corp
Publication of SG55369A1 publication Critical patent/SG55369A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/16Solid spheres
    • C08K7/18Solid spheres inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09CTREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/28Compounds of silicon
    • C09C1/30Silicic acid
    • C09C1/3009Physical treatment, e.g. grinding; treatment with ultrasonic vibrations
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09CTREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C3/00Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
    • C09C3/04Physical treatment, e.g. grinding, treatment with ultrasonic vibrations
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/30Particle morphology extending in three dimensions
    • C01P2004/32Spheres
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/22Rheological behaviour as dispersion, e.g. viscosity, sedimentation stability
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
SG1997003167A 1996-08-29 1997-08-29 Inorganic filler epoxy resin composition and semiconductor device SG55369A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24702596A JP3611066B2 (ja) 1996-08-29 1996-08-29 無機質充填剤及びエポキシ樹脂組成物の製造方法

Publications (1)

Publication Number Publication Date
SG55369A1 true SG55369A1 (en) 1998-12-21

Family

ID=17157294

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003167A SG55369A1 (en) 1996-08-29 1997-08-29 Inorganic filler epoxy resin composition and semiconductor device

Country Status (9)

Country Link
US (2) US5935314A (zh)
EP (1) EP0829455B1 (zh)
JP (1) JP3611066B2 (zh)
KR (1) KR100255340B1 (zh)
CN (1) CN1080746C (zh)
DE (1) DE69727869T2 (zh)
MY (2) MY124820A (zh)
SG (1) SG55369A1 (zh)
TW (1) TW495530B (zh)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999064513A1 (en) 1998-06-09 1999-12-16 Nitto Denko Corporation Semiconductor sealing epoxy resin composition and semiconductor device using the same
JP3334864B2 (ja) 1998-11-19 2002-10-15 松下電器産業株式会社 電子装置
EP1203792A4 (en) * 1999-02-25 2002-05-29 Nitto Denko Corp RESIN COMPOSITION FOR SEMICONDUCTOR ENCLOSURE, SEMICONDUCTOR COMPONENT OBTAINED therefrom, AND METHOD FOR THE PRODUCTION OF SEMICONDUCTOR COMPONENTS
US6201055B1 (en) * 1999-03-11 2001-03-13 Dow Corning Corporation Silicone composition and silicone pressure sensitive adhesive
JP3417354B2 (ja) 1999-08-19 2003-06-16 ソニーケミカル株式会社 接着材料及び回路接続方法
US6500891B1 (en) 2000-05-19 2002-12-31 Loctite Corporation Low viscosity thermally conductive compositions containing spherical thermally conductive particles
JP2001329145A (ja) * 2000-05-22 2001-11-27 Sumitomo Bakelite Co Ltd 半導体封止用エポキシ樹脂成形材料及び半導体装置
JP4438973B2 (ja) * 2000-05-23 2010-03-24 アムコア テクノロジー,インコーポレイテッド シート状樹脂組成物及びそれを用いた半導体装置の製造方法
US6737467B1 (en) * 2000-11-21 2004-05-18 E. I. Du Pont De Nemours And Company Low gloss powder coatings
DE10137666A1 (de) * 2001-08-01 2003-02-27 Infineon Technologies Ag Schutzvorrichtung für Baugruppen und Verfahren zu ihrer Herstellung
JP2005527113A (ja) * 2002-05-23 2005-09-08 スリーエム イノベイティブ プロパティズ カンパニー ナノ粒子充填アンダーフィル
TWI281924B (en) * 2003-04-07 2007-06-01 Hitachi Chemical Co Ltd Epoxy resin molding material for sealing use and semiconductor device
EP1498244B1 (en) * 2003-07-17 2006-10-04 Nitto Denko Corporation Method for producing a semiconductor-molding tablet
KR101073423B1 (ko) * 2005-04-19 2011-10-17 덴끼 가가꾸 고교 가부시키가이샤 금속 베이스 회로 기판, led, 및 led 광원 유닛
US20070134844A1 (en) * 2005-12-13 2007-06-14 Shin-Etsu Chemical Co., Ltd. Process for producing flip-chip type semiconductor device and semiconductor device produced by the process
KR101148140B1 (ko) 2007-12-24 2012-05-23 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자
KR101202042B1 (ko) 2008-12-17 2012-11-16 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자
TWI492339B (zh) * 2009-06-01 2015-07-11 Shinetsu Chemical Co A dam material composition for a bottom layer filler material for a multilayer semiconductor device, and a manufacturing method of a multilayer semiconductor device using the dam material composition
TWI432477B (zh) * 2010-08-18 2014-04-01 Benq Materials Corp 環氧樹脂組成物
WO2012133818A1 (ja) * 2011-03-31 2012-10-04 三菱化学株式会社 三次元集積回路積層体、及び三次元集積回路積層体用の層間充填材
CN104497490B (zh) * 2014-12-22 2017-08-25 科化新材料泰州有限公司 用于全包封器件的高导热环氧树脂组合物及其制备方法
CN104788911B (zh) * 2015-04-29 2017-10-31 华中科技大学 一种环氧树脂复合材料、其制备方法及应用
WO2017188280A1 (ja) 2016-04-28 2017-11-02 旭硝子株式会社 含フッ素共重合体組成物、その製造方法、および成形体
JP2018104649A (ja) * 2016-12-28 2018-07-05 日東電工株式会社 樹脂シート
JP6288344B1 (ja) * 2017-03-31 2018-03-07 日立化成株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法
CN110476243A (zh) * 2017-03-31 2019-11-19 日立化成株式会社 电子电路用保护材料、电子电路用保护材料用密封材料、密封方法和半导体装置的制造方法
JP6292334B1 (ja) * 2017-03-31 2018-03-14 日立化成株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法
KR102359057B1 (ko) * 2017-07-31 2022-02-07 엘지이노텍 주식회사 열전 소자
JP6547818B2 (ja) * 2017-12-14 2019-07-24 日立化成株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法
JP6930555B2 (ja) * 2017-12-14 2021-09-01 昭和電工マテリアルズ株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法
JP6547819B2 (ja) * 2017-12-14 2019-07-24 日立化成株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法
JP6870706B2 (ja) * 2019-06-27 2021-05-12 昭和電工マテリアルズ株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862090A (en) 1971-06-28 1975-01-21 Celanese Corp Process for producing oxymethylene copolymers
US3862030A (en) * 1972-12-13 1975-01-21 Amerace Esna Corp Microporous sub-micron filter media
JPS6132446A (ja) * 1984-07-25 1986-02-15 Hitachi Ltd 半導体装置
JPS62243630A (ja) * 1986-04-17 1987-10-24 Denki Kagaku Kogyo Kk 無機質充填剤
US5137940A (en) * 1989-02-09 1992-08-11 Shin-Etsu Chemical Co., Ltd. Semiconductor encapsulating epoxy resin compositions
JPH0645740B2 (ja) * 1989-03-01 1994-06-15 信越化学工業株式会社 半導体封止用エポキシ樹脂組成物
JPH02261856A (ja) * 1989-03-31 1990-10-24 Toshiba Corp 半導体封止用エポキシ樹脂組成物及び樹脂封止形半導体装置
JP2864584B2 (ja) * 1989-12-05 1999-03-03 日立化成工業株式会社 半導体用エポキシ樹脂組成物および半導体装置の製造法
JPH06102715B2 (ja) * 1990-08-14 1994-12-14 信越化学工業株式会社 エポキシ樹脂組成物及び半導体装置
JP2668289B2 (ja) * 1991-01-25 1997-10-27 ソマール 株式会社 粉体塗料用エポキシ樹脂組成物
DE4204266C2 (de) * 1992-02-13 1996-04-18 Basf Lacke & Farben Pulverlack und Verfahren zur Innenbeschichtung von Verpackungsbehältern
JPH05239321A (ja) * 1992-02-28 1993-09-17 Toshiba Chem Corp エポキシ樹脂組成物および半導体封止装置
US5630554A (en) * 1995-02-21 1997-05-20 Dowa Mining Co., Ltd. Method of separating and recovering valuable metals and non-metals from composite materials
EP0827159B1 (en) * 1996-08-29 2003-05-21 Mitsubishi Denki Kabushiki Kaisha Epoxy resin composition and semiconductor device encapsulated therewith

Also Published As

Publication number Publication date
DE69727869T2 (de) 2005-02-03
KR19980019141A (ko) 1998-06-05
MY124820A (en) 2006-07-31
EP0829455B1 (en) 2004-03-03
MY121624A (en) 2006-02-28
CN1080746C (zh) 2002-03-13
DE69727869D1 (de) 2004-04-08
TW495530B (en) 2002-07-21
JP3611066B2 (ja) 2005-01-19
KR100255340B1 (ko) 2000-05-01
US6207296B1 (en) 2001-03-27
CN1176276A (zh) 1998-03-18
US5935314A (en) 1999-08-10
JPH1067883A (ja) 1998-03-10
EP0829455A3 (en) 1998-11-18
EP0829455A2 (en) 1998-03-18

Similar Documents

Publication Publication Date Title
SG55369A1 (en) Inorganic filler epoxy resin composition and semiconductor device
SG87012A1 (en) Epoxy resin composition and semiconductor device using the same
SG60109A1 (en) Epoxy resin composition and semiconductor device encapsulated therewith
SG70032A1 (en) Polyphenylene sulfide resin composition and resin-encapsulated semiconductor device
TW338559U (en) Resin package type semiconductor device
EP0501734A3 (en) Semiconductor device-encapsulating epoxy resin composition
EP0484157A3 (en) Maleimide resin composition and resin encapsulated semiconductor device manufactured using the composition
GB2315269B (en) Epoxy resin composition and curing catalyst therefor
SG41939A1 (en) Epoxy resin composition for semiconductor encapsulation
GB2317386B (en) UV-and thermally-hardenable epoxy resins
EP0739877A3 (en) Epoxy resin, resin composition and resin-encapsulated semiconductor device
EP0506360A3 (en) Epoxy resin compositions and semiconductor devices encapsulated therewith
SG73590A1 (en) Latent catalyst thermosetting resin composition comprising the catalyst epoxy resin molding material comprising the catalyst and semiconductor device
ZA953337B (en) Modified epoxy resin
EP0783025A3 (en) Epoxy resin composition
GB2291426B (en) Epoxy resin composition process for producing the same and resin-sealed semiconductor device
HK1027370A1 (en) Semiconductor sealing epoxy resin composition and semiconductor device using the same
EP0932648A4 (en) EPOXY CURING AGENT
EP0511702A3 (en) Semiconductor device encapsulated in resin and completely insulated for high voltages
SG90029A1 (en) Epoxy resin composition and resin-encapsulated semiconductor device
SG63691A1 (en) Epoxy resin epoxy resin composition and hardened product thereof
EP0723982A3 (de) Härtbares Epoxidharzgemisch
EP1130041A4 (en) EPOXY RESIN COMPOSITION AND SEMICONDUCTOR DEVICE
SG85624A1 (en) Epoxy resin composition and resin-encapsulated semiconductor device
SG64845A1 (en) Epoxy resin composition and resin-encapsulated semiconductor device