SG53089A1 - Process and apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic - Google Patents

Process and apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic

Info

Publication number
SG53089A1
SG53089A1 SG1997003639A SG1997003639A SG53089A1 SG 53089 A1 SG53089 A1 SG 53089A1 SG 1997003639 A SG1997003639 A SG 1997003639A SG 1997003639 A SG1997003639 A SG 1997003639A SG 53089 A1 SG53089 A1 SG 53089A1
Authority
SG
Singapore
Prior art keywords
arsenic
antimony
controlling
oxygen content
heavily doped
Prior art date
Application number
SG1997003639A
Other languages
English (en)
Inventor
John D Holder
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of SG53089A1 publication Critical patent/SG53089A1/en

Links

Classifications

    • H01L21/208—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y10S117/907—Refluxing atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SG1997003639A 1996-10-15 1997-10-02 Process and apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic SG53089A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/732,527 US5904768A (en) 1996-10-15 1996-10-15 Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic

Publications (1)

Publication Number Publication Date
SG53089A1 true SG53089A1 (en) 1998-09-28

Family

ID=24943869

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003639A SG53089A1 (en) 1996-10-15 1997-10-02 Process and apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic

Country Status (7)

Country Link
US (2) US5904768A (ja)
EP (1) EP0837159A1 (ja)
JP (1) JPH10182289A (ja)
KR (1) KR100563425B1 (ja)
CN (2) CN1480567A (ja)
SG (1) SG53089A1 (ja)
TW (1) TW509731B (ja)

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US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
US6312517B1 (en) * 2000-05-11 2001-11-06 Memc Electronic Materials, Inc. Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
US6673147B2 (en) 2001-12-06 2004-01-06 Seh America, Inc. High resistivity silicon wafer having electrically inactive dopant and method of producing same
JP4089354B2 (ja) * 2002-08-30 2008-05-28 株式会社Ｓｕｍｃｏ エピタキシャルウェーハとその製造方法
CN1324166C (zh) * 2002-11-12 2007-07-04 Memc电子材料有限公司 利用坩锅旋转以控制温度梯度的制备单晶硅的方法
JP4193503B2 (ja) * 2003-01-31 2008-12-10 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
EP1717355B1 (en) * 2004-02-02 2013-11-20 Shin-Etsu Handotai Co., Ltd. Production apparatus and process for producing silicon single crystal and silicon wafer
JP2007112663A (ja) 2005-10-20 2007-05-10 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置および製造方法
US8152921B2 (en) * 2006-09-01 2012-04-10 Okmetic Oyj Crystal manufacturing
JP5118386B2 (ja) * 2007-05-10 2013-01-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶の製造方法
JP5172202B2 (ja) 2007-05-10 2013-03-27 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶の製造方法
KR100872806B1 (ko) * 2007-10-01 2008-12-09 주식회사 실트론 실리콘 단결정 잉곳 생산장치
CN101952489B (zh) * 2008-02-14 2013-03-27 德国太阳能有限责任公司 通过定向凝固生产结晶体的装置和方法
DE112008003953B4 (de) 2008-07-25 2020-06-18 Sumco Techxiv Corp. Verfahren zum Herstellen eines Einkristalls, Flussbegradigungszylinder und Einkristall-Hochziehvorrichtung
CN101717993B (zh) * 2009-11-10 2011-01-12 天津市环欧半导体材料技术有限公司 直拉重掺锑单晶的掺杂方法及掺杂装置
JP2011184213A (ja) * 2010-03-04 2011-09-22 Covalent Materials Corp シリコン単結晶の製造方法
CN102345154A (zh) * 2011-08-14 2012-02-08 上海合晶硅材料有限公司 提高单晶硅晶棒中氧含量的方法及装置
CN102345155A (zh) * 2011-08-14 2012-02-08 上海合晶硅材料有限公司 超重掺As的晶棒拉制方法
US9376762B2 (en) * 2012-11-29 2016-06-28 Solaicx Weir for improved crystal growth in a continuous Czochralski process
US9416975B2 (en) * 2013-09-04 2016-08-16 General Electric Company Dual fuel combustor for a gas turbine engine including a toroidal injection manifold with inner and outer sleeves
CN104726931A (zh) * 2015-03-30 2015-06-24 江苏盎华光伏工程技术研究中心有限公司 具有退火装置的单晶炉及其控制方法
US10100428B2 (en) 2015-07-17 2018-10-16 Corner Star Limited Methods for reducing the erosion rate of a crucible during crystal pulling
CN105369346A (zh) * 2015-12-09 2016-03-02 天津市环欧半导体材料技术有限公司 一种直拉重掺砷低电阻硅单晶的装置
CN112301425A (zh) * 2019-07-31 2021-02-02 内蒙古中环光伏材料有限公司 一种大尺寸单晶硅棒大氩气流量拉晶方法
CN112779601B (zh) * 2020-12-23 2022-08-05 有研半导体硅材料股份公司 一种重掺砷极低电阻硅单晶的生长方法

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US3615261A (en) * 1969-04-02 1971-10-26 Motorola Inc Method of producing single semiconductor crystals
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EP0042901B1 (fr) * 1980-06-26 1984-10-31 International Business Machines Corporation Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski
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JPH04124083A (ja) * 1990-09-13 1992-04-24 Kawasaki Steel Corp 半導体単結晶育成装置
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JP2807609B2 (ja) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
EP0625595B1 (en) * 1993-03-29 2001-09-19 Research Development Corporation Of Japan Control of oxygen concentration in single crystal pulled up from melt containing group-V element
JP2619611B2 (ja) * 1993-05-31 1997-06-11 住友シチックス株式会社 単結晶の製造装置および製造方法
JPH08143391A (ja) * 1993-06-01 1996-06-04 Texas Instr Inc <Ti> チョクラルスキ結晶引上げ装置に使用する螺旋加熱器
JP2691393B2 (ja) * 1993-12-28 1997-12-17 科学技術振興事業団 単結晶引上げ用Ｓｉ融液の調整方法
US5477805A (en) * 1993-12-28 1995-12-26 Research Development Corporation Of Japan Preparation of silicon melt for use in pull method of manufacturing single crystal
JPH0859386A (ja) * 1994-08-22 1996-03-05 Mitsubishi Materials Corp 半導体単結晶育成装置
DE4442829A1 (de) * 1994-12-01 1996-06-05 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zur Herstellung eines Einkristalls
JP3453914B2 (ja) * 1995-03-06 2003-10-06 三菱住友シリコン株式会社 ＣＺ法によるＳｉ単結晶の製造方法
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon

Also Published As

Publication number Publication date
CN1188821A (zh) 1998-07-29
TW509731B (en) 2002-11-11
JPH10182289A (ja) 1998-07-07
US5904768A (en) 1999-05-18
KR100563425B1 (ko) 2006-05-25
US6214109B1 (en) 2001-04-10
EP0837159A1 (en) 1998-04-22
CN1099476C (zh) 2003-01-22
KR19980032806A (ko) 1998-07-25
CN1480567A (zh) 2004-03-10

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