SG48015A1 - Novolask resins of lowered hydroxyl content and high contrast high thermal stability positive photoresists prepared therefrom - Google Patents

Novolask resins of lowered hydroxyl content and high contrast high thermal stability positive photoresists prepared therefrom

Info

Publication number
SG48015A1
SG48015A1 SG1996006189A SG1996006189A SG48015A1 SG 48015 A1 SG48015 A1 SG 48015A1 SG 1996006189 A SG1996006189 A SG 1996006189A SG 1996006189 A SG1996006189 A SG 1996006189A SG 48015 A1 SG48015 A1 SG 48015A1
Authority
SG
Singapore
Prior art keywords
novolask
resins
thermal stability
prepared therefrom
hydroxyl content
Prior art date
Application number
SG1996006189A
Other languages
English (en)
Inventor
Sunit S Dixin
Randall Kautz
Richard M Lazarus
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Publication of SG48015A1 publication Critical patent/SG48015A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG1996006189A 1990-02-05 1991-02-01 Novolask resins of lowered hydroxyl content and high contrast high thermal stability positive photoresists prepared therefrom SG48015A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/475,402 US5182184A (en) 1990-02-05 1990-02-05 Novolak resins of lowered hydroxyl content and high contrast high thermal stability positive photoresists prepared therefrom

Publications (1)

Publication Number Publication Date
SG48015A1 true SG48015A1 (en) 1998-04-17

Family

ID=23887424

Family Applications (2)

Application Number Title Priority Date Filing Date
SG1996006189A SG48015A1 (en) 1990-02-05 1991-02-01 Novolask resins of lowered hydroxyl content and high contrast high thermal stability positive photoresists prepared therefrom
SG1997004401A SG75819A1 (en) 1990-02-05 1991-02-01 High contrast high thermal stability positive photoresists having novolak resins of lowered hydroxyl content

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG1997004401A SG75819A1 (en) 1990-02-05 1991-02-01 High contrast high thermal stability positive photoresists having novolak resins of lowered hydroxyl content

Country Status (8)

Country Link
US (1) US5182184A (ja)
EP (1) EP0441550B1 (ja)
JP (2) JP2504624B2 (ja)
KR (1) KR940002547B1 (ja)
AU (1) AU624758B2 (ja)
CA (1) CA2034602A1 (ja)
DE (1) DE69130745T2 (ja)
SG (2) SG48015A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3424341B2 (ja) * 1994-04-11 2003-07-07 住友化学工業株式会社 感光性樹脂組成物
US5726257A (en) * 1994-08-30 1998-03-10 Sumitomo Chemical Company, Ltd. Esterified resorcinol-carbonyl compound condensates and epoxy resins therewith
JP3324898B2 (ja) * 1995-02-24 2002-09-17 東京応化工業株式会社 ポジ型レジストパターンの製造方法
JP3635598B2 (ja) * 1995-07-13 2005-04-06 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US5707782A (en) * 1996-03-01 1998-01-13 The Board Of Trustees Of The University Of Illinois Photoimageable, dielectric, crosslinkable copolyesters
TW475926B (en) * 1996-06-06 2002-02-11 Sumitomo Chemical Co Novel ester compound and thermosetting resin composition using the same
JP2007003575A (ja) 2005-06-21 2007-01-11 Ricoh Co Ltd 除電装置及びこれを用いた画像形成装置
CN102520580A (zh) 2005-08-30 2012-06-27 日立化成工业株式会社 光阻图案的形成方法
JP5011989B2 (ja) * 2006-12-04 2012-08-29 宇部興産株式会社 フォトレジスト用ノボラック型フェノール樹脂およびその製造方法
WO2014017236A1 (ja) * 2012-07-25 2014-01-30 Dic株式会社 ラジカル硬化性化合物、ラジカル硬化性化合物の製造方法、ラジカル硬化性組成物、その硬化物、及びレジスト材料用組成物
JP6070020B2 (ja) * 2012-09-28 2017-02-01 明和化成株式会社 ノボラック型フェノール樹脂の製造方法、ノボラック型フェノール樹脂、及びフォトレジスト組成物
KR20150102132A (ko) 2014-02-27 2015-09-07 삼성디스플레이 주식회사 표시장치용 복합 기판, 이를 갖는 표시장치 및 그 제조방법
JP2017088675A (ja) * 2015-11-05 2017-05-25 Dic株式会社 ノボラック型フェノール性水酸基含有樹脂及びレジスト材料

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU781745A1 (ru) * 1978-07-24 1980-11-23 Предприятие П/Я Х-5476 Позитивный фоторезист
CA1216697A (en) * 1981-12-29 1987-01-13 Peter W. Kopf Process for producing particulate novolac resins and aqueous dispersions
DE3484994D1 (de) * 1983-05-18 1991-10-10 Sumitomo Chemical Co Verfahren zur herstellung von phenol-verbindungen und -harzen.
EP0136110A3 (en) * 1983-08-30 1986-05-28 Mitsubishi Kasei Corporation Positive photosensitive compositions useful as photoresists
US4564575A (en) * 1984-01-30 1986-01-14 International Business Machines Corporation Tailoring of novolak and diazoquinone positive resists by acylation of novolak
GB8505402D0 (en) * 1985-03-02 1985-04-03 Ciba Geigy Ag Modified phenolic resins
US4980264A (en) * 1985-12-17 1990-12-25 International Business Machines Corporation Photoresist compositions of controlled dissolution rate in alkaline developers
EP0227487B1 (en) * 1985-12-27 1992-07-15 Japan Synthetic Rubber Co., Ltd. Positive type radiation-sensitive resin composition
DE3810631A1 (de) * 1988-03-29 1989-10-12 Hoechst Ag Positiv arbeitendes lichtempfindliches gemisch und daraus hergestelltes aufzeichnungsmaterial mit hohem waermestand
US4920028A (en) * 1988-03-31 1990-04-24 Morton Thiokol, Inc. High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone
US4996122A (en) * 1988-03-31 1991-02-26 Morton International, Inc. Method of forming resist pattern and thermally stable and highly resolved resist pattern
NO891063L (no) * 1988-03-31 1989-10-02 Thiokol Morton Inc Novolakharpikser av blandede aldehyder og positive fotoresistmaterialer fremstilt fra slike harpikser.
US4997734A (en) * 1988-08-02 1991-03-05 Morton International, Inc. Method of forming a thermally stable mixed aldehyde novolak resin containing resist pattern and that pattern on a substrate
US4983492A (en) * 1988-06-06 1991-01-08 Shipley Company Inc. Positive dye photoresist compositions with 2,4-bis(phenylazo)resorcinol
US4943511A (en) * 1988-08-05 1990-07-24 Morton Thiokol, Inc. High sensitivity mid and deep UV resist

Also Published As

Publication number Publication date
EP0441550A3 (en) 1993-01-20
JPH08211601A (ja) 1996-08-20
EP0441550A2 (en) 1991-08-14
KR940002547B1 (ko) 1994-03-25
AU7015991A (en) 1991-08-08
JPH0532751A (ja) 1993-02-09
DE69130745T2 (de) 1999-09-16
US5182184A (en) 1993-01-26
EP0441550B1 (en) 1999-01-13
JP2504624B2 (ja) 1996-06-05
DE69130745D1 (de) 1999-02-25
KR910015888A (ko) 1991-09-30
CA2034602A1 (en) 1991-08-06
AU624758B2 (en) 1992-06-18
JP2942484B2 (ja) 1999-08-30
SG75819A1 (en) 2000-10-24

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