SG47534A1 - Wire bonding over the active circuit area of an integrated circuit device - Google Patents

Wire bonding over the active circuit area of an integrated circuit device

Info

Publication number
SG47534A1
SG47534A1 SG1996002685A SG1996002685A SG47534A1 SG 47534 A1 SG47534 A1 SG 47534A1 SG 1996002685 A SG1996002685 A SG 1996002685A SG 1996002685 A SG1996002685 A SG 1996002685A SG 47534 A1 SG47534 A1 SG 47534A1
Authority
SG
Singapore
Prior art keywords
wire bonding
integrated circuit
bonding over
circuit device
circuit area
Prior art date
Application number
SG1996002685A
Other languages
English (en)
Inventor
Katherine G Heinen
Roger J Stierman
Rafael C Alfaro
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of SG47534A1 publication Critical patent/SG47534A1/en

Links

Classifications

    • H10W72/071—
    • H10W72/019—
    • H10W70/60—
    • H10W72/0711—
    • H10W72/07533—
    • H10W72/07541—
    • H10W72/536—
    • H10W72/552—
    • H10W72/5522—
    • H10W72/59—
    • H10W72/9232—
    • H10W72/952—
    • H10W74/00—
SG1996002685A 1992-09-10 1993-09-10 Wire bonding over the active circuit area of an integrated circuit device SG47534A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94308792A 1992-09-10 1992-09-10

Publications (1)

Publication Number Publication Date
SG47534A1 true SG47534A1 (en) 1998-04-17

Family

ID=25479083

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996002685A SG47534A1 (en) 1992-09-10 1993-09-10 Wire bonding over the active circuit area of an integrated circuit device

Country Status (7)

Country Link
EP (1) EP0587442B1 (enExample)
JP (1) JPH06204277A (enExample)
KR (1) KR100335591B1 (enExample)
DE (1) DE69323515T2 (enExample)
MY (1) MY110904A (enExample)
SG (1) SG47534A1 (enExample)
TW (1) TW253987B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3420435B2 (ja) 1996-07-09 2003-06-23 松下電器産業株式会社 基板の製造方法、半導体装置及び半導体装置の製造方法
TW445616B (en) 1998-12-04 2001-07-11 Koninkl Philips Electronics Nv An integrated circuit device
US8021976B2 (en) 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
US6503820B1 (en) * 1999-10-04 2003-01-07 Koninklijke Philips Electronics N.V. Die pad crack absorption system and method for integrated circuit chip fabrication
DE10200932A1 (de) * 2002-01-12 2003-07-24 Philips Intellectual Property Diskretes Halbleiterbauelement
DE10242325A1 (de) * 2002-09-12 2004-04-01 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Halbleiter mit Isolierschicht und Verfahren zu dessen Herstellung
DE10245867A1 (de) * 2002-09-30 2004-04-15 Siced Electronics Development Gmbh & Co. Kg Leistungs-Halbleiterbauelement mit verbesserten Anschlusskontakten und Verfahren zu dessen Herstellung
US7777223B2 (en) * 2004-03-16 2010-08-17 Pansonic Corporation Semiconductor device
JP4696532B2 (ja) 2004-05-20 2011-06-08 株式会社デンソー パワー複合集積型半導体装置およびその製造方法
JP4674522B2 (ja) 2004-11-11 2011-04-20 株式会社デンソー 半導体装置
DE102006003930A1 (de) * 2006-01-26 2007-08-09 Infineon Technologies Austria Ag Leistungshalbleiterelement mit internen Bonddrahtverbindungen zu einem Bauelementsubstrat und Verfahren zur Herstellung desselben
JP5732035B2 (ja) * 2009-03-20 2015-06-10 ミクロガン ゲーエムベーハー 垂直接触電子部品及びその製造方法
JP2015204393A (ja) * 2014-04-15 2015-11-16 サンケン電気株式会社 半導体装置
JP6690509B2 (ja) * 2016-11-22 2020-04-28 株式会社村田製作所 半導体装置
US10663175B2 (en) 2017-05-30 2020-05-26 Samsung Electronics Co., Ltd. Home appliance

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017886A (en) * 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
JPS51118965A (en) * 1976-02-23 1976-10-19 Hitachi Ltd Insulation film of semiconductor device
US4723197A (en) * 1985-12-16 1988-02-02 National Semiconductor Corporation Bonding pad interconnection structure
JPH01103867A (ja) * 1987-10-16 1989-04-20 Sanyo Electric Co Ltd トランジスタ
JP2559602B2 (ja) * 1987-11-30 1996-12-04 超音波工業株式会社 ワイヤボンダ用超音波振動子
JP2593965B2 (ja) * 1991-01-29 1997-03-26 三菱電機株式会社 半導体装置
US5201454A (en) * 1991-09-30 1993-04-13 Texas Instruments Incorporated Process for enhanced intermetallic growth in IC interconnections

Also Published As

Publication number Publication date
EP0587442A2 (en) 1994-03-16
KR940008033A (ko) 1994-04-28
EP0587442A3 (enExample) 1994-08-03
EP0587442B1 (en) 1999-02-17
KR100335591B1 (ko) 2002-08-24
JPH06204277A (ja) 1994-07-22
DE69323515D1 (de) 1999-03-25
DE69323515T2 (de) 1999-06-17
TW253987B (enExample) 1995-08-11
MY110904A (en) 1999-06-30

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