SG39690G - Electrical contact in semiconductor devices - Google Patents

Electrical contact in semiconductor devices

Info

Publication number
SG39690G
SG39690G SG396/90A SG39690A SG39690G SG 39690 G SG39690 G SG 39690G SG 396/90 A SG396/90 A SG 396/90A SG 39690 A SG39690 A SG 39690A SG 39690 G SG39690 G SG 39690G
Authority
SG
Singapore
Prior art keywords
electrical contact
semiconductor devices
semiconductor
devices
electrical
Prior art date
Application number
SG396/90A
Other languages
English (en)
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24589451&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG39690(G) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Publication of SG39690G publication Critical patent/SG39690G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/019—Contacts of silicides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
SG396/90A 1984-08-30 1990-06-02 Electrical contact in semiconductor devices SG39690G (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/645,549 US4641420A (en) 1984-08-30 1984-08-30 Metalization process for headless contact using deposited smoothing material
PCT/US1985/001510 WO1986001639A1 (fr) 1984-08-30 1985-08-06 Contact electrique dans des dispositifs semi-conducteurs

Publications (1)

Publication Number Publication Date
SG39690G true SG39690G (en) 1990-08-03

Family

ID=24589451

Family Applications (1)

Application Number Title Priority Date Filing Date
SG396/90A SG39690G (en) 1984-08-30 1990-06-02 Electrical contact in semiconductor devices

Country Status (10)

Country Link
US (1) US4641420A (fr)
EP (1) EP0191057B1 (fr)
JP (1) JP2530312B2 (fr)
KR (2) KR860700311A (fr)
CA (1) CA1225466A (fr)
DE (1) DE3575364D1 (fr)
ES (1) ES8704036A1 (fr)
IE (1) IE56930B1 (fr)
SG (1) SG39690G (fr)
WO (1) WO1986001639A1 (fr)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900000065B1 (ko) * 1985-08-13 1990-01-19 가부시끼가이샤 도오시바 독출전용 반도체기억장치와 그 제조방법
US4755479A (en) * 1986-02-17 1988-07-05 Fujitsu Limited Manufacturing method of insulated gate field effect transistor using reflowable sidewall spacers
NL8600770A (nl) * 1986-03-26 1987-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4707457A (en) * 1986-04-03 1987-11-17 Advanced Micro Devices, Inc. Method for making improved contact for integrated circuit structure
EP0257948A3 (fr) * 1986-08-25 1988-09-28 AT&T Corp. Traversée conductrice pour dispositifs CMOS
EP0281140B1 (fr) * 1987-03-04 1993-05-12 Kabushiki Kaisha Toshiba Dispositif de mémoire à semi-conducteur et procédé pour sa fabrication
EP0302647A1 (fr) * 1987-08-03 1989-02-08 AT&T Corp. Bouchon en aluminium, utilisant un élément de garde de paroi latéral isolant
FR2624304B1 (fr) * 1987-12-04 1990-05-04 Philips Nv Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium
JP2585662B2 (ja) * 1987-12-23 1997-02-26 株式会社日立製作所 ヘテロ接合バイポーラトランジスタの製造方法
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer
GB2219434A (en) * 1988-06-06 1989-12-06 Philips Nv A method of forming a contact in a semiconductor device
US4898841A (en) * 1988-06-16 1990-02-06 Northern Telecom Limited Method of filling contact holes for semiconductor devices and contact structures made by that method
GB2220298A (en) * 1988-06-29 1990-01-04 Philips Nv A method of manufacturing a semiconductor device
FR2634317A1 (fr) * 1988-07-12 1990-01-19 Philips Nv Procede pour fabriquer un dispositif semiconducteur ayant au moins un niveau de prise de contact a travers des ouvertures de contact de petites dimensions
US4894352A (en) * 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
EP0388075B1 (fr) * 1989-03-16 1996-11-06 STMicroelectronics, Inc. Contacts pour dispositifs semi-conducteurs
EP0388563B1 (fr) * 1989-03-24 1994-12-14 STMicroelectronics, Inc. Procédé de fabrication d'un contact/via
KR910013463A (ko) * 1989-12-29 1991-08-08 김광호 반도체 소자의 개구형성방법
US4987099A (en) * 1989-12-29 1991-01-22 North American Philips Corp. Method for selectively filling contacts or vias or various depths with CVD tungsten
US5258645A (en) * 1990-03-09 1993-11-02 Fujitsu Limited Semiconductor device having MOS transistor and a sidewall with a double insulator layer structure
ATE135848T1 (de) * 1990-06-29 1996-04-15 Canon Kk Verfahren zum herstellen einer halbleiteranordnung mit einer ausrichtungsmarke
KR960001601B1 (ko) * 1992-01-23 1996-02-02 삼성전자주식회사 반도체 장치의 접촉구 매몰방법 및 구조
KR920015542A (ko) * 1991-01-14 1992-08-27 김광호 반도체장치의 다층배선형성법
EP0593529A4 (fr) * 1991-04-26 1995-03-22 Quicklogic Corp Structures d'interconnexion programmables et circuits integres programmables.
US5196724A (en) * 1991-04-26 1993-03-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5557136A (en) * 1991-04-26 1996-09-17 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
JPH0529254A (ja) * 1991-07-24 1993-02-05 Sony Corp 配線形成方法
JPH0562967A (ja) * 1991-09-02 1993-03-12 Sharp Corp 半導体装置の製造方法
US5270256A (en) * 1991-11-27 1993-12-14 Intel Corporation Method of forming a guard wall to reduce delamination effects
US5286674A (en) * 1992-03-02 1994-02-15 Motorola, Inc. Method for forming a via structure and semiconductor device having the same
US5342808A (en) * 1992-03-12 1994-08-30 Hewlett-Packard Company Aperture size control for etched vias and metal contacts
US5317192A (en) * 1992-05-06 1994-05-31 Sgs-Thomson Microelectronics, Inc. Semiconductor contact via structure having amorphous silicon side walls
US5387548A (en) * 1992-06-22 1995-02-07 Motorola, Inc. Method of forming an etched ohmic contact
US5312780A (en) * 1992-12-16 1994-05-17 At&T Bell Laboratories Integrated circuit fabrication method
US5275973A (en) * 1993-03-01 1994-01-04 Motorola, Inc. Method for forming metallization in an integrated circuit
US5393702A (en) * 1993-07-06 1995-02-28 United Microelectronics Corporation Via sidewall SOG nitridation for via filling
US5654232A (en) * 1994-08-24 1997-08-05 Intel Corporation Wetting layer sidewalls to promote copper reflow into grooves
JPH08306783A (ja) * 1995-05-02 1996-11-22 Sony Corp 半導体装置のコンタクト形成方法
US5879955A (en) * 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6420725B1 (en) 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
JPH10509285A (ja) * 1995-09-14 1998-09-08 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 縮小したフィーチャーサイズのためのダマスクプロセス
US5702981A (en) * 1995-09-29 1997-12-30 Maniar; Papu D. Method for forming a via in a semiconductor device
US5683930A (en) * 1995-12-06 1997-11-04 Micron Technology Inc. SRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and methods of making
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US6337266B1 (en) 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US5888901A (en) * 1996-08-05 1999-03-30 Motorola, Inc. Multilevel interconnection and method for making
US6015977A (en) 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US5863707A (en) * 1997-02-11 1999-01-26 Advanced Micro Devices, Inc. Method for producing ultra-fine interconnection features
US5789316A (en) * 1997-03-10 1998-08-04 Vanguard International Semiconductor Corporation Self-aligned method for forming a narrow via
US6140217A (en) * 1998-07-16 2000-10-31 International Business Machines Corporation Technique for extending the limits of photolithography
US6448657B1 (en) * 1999-04-21 2002-09-10 Applied Materials, Inc. Structure for reducing junction spiking through a wall surface of an overetched contact via
US6563156B2 (en) 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6617689B1 (en) 2000-08-31 2003-09-09 Micron Technology, Inc. Metal line and method of suppressing void formation therein
TW517339B (en) * 2001-07-25 2003-01-11 Promos Technologies Inc Method of preventing short circuit between contact window and metal line
KR100635925B1 (ko) * 2005-07-21 2006-10-18 삼성전자주식회사 반도체 장치의 배선 구조물 및 이의 형성 방법
US8610275B2 (en) * 2010-07-14 2013-12-17 Institute of Microelectronics, Chinese Academy of Sciences Semiconductor contact structure including a spacer formed within a via and method of manufacturing the same
KR20150108176A (ko) * 2014-03-17 2015-09-25 에스케이하이닉스 주식회사 상변화층을 구비한 반도체 집적 회로 장치의 제조방법
US11929280B2 (en) * 2020-09-22 2024-03-12 Changxin Memory Technologies, Inc. Contact window structure and method for forming contact window structure

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075756A (en) * 1976-06-30 1978-02-28 International Business Machines Corporation Process for fabricating above and below ground plane wiring on one side of a supporting substrate and the resulting circuit configuration
JPS6047738B2 (ja) * 1977-09-14 1985-10-23 松下電器産業株式会社 半導体装置のコンタクト形成方法
JPS5494196A (en) * 1977-12-30 1979-07-25 Ibm Metallic layer removing method
US4234362A (en) * 1978-11-03 1980-11-18 International Business Machines Corporation Method for forming an insulator between layers of conductive material
US4272561A (en) * 1979-05-29 1981-06-09 International Business Machines Corporation Hybrid process for SBD metallurgies
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
CA1148274A (fr) * 1980-03-24 1983-06-14 International Business Machines Corporation Methode de fabrication de diodes a barriere schottky stable definie au moyen d'un nitrure
US4359816A (en) * 1980-07-08 1982-11-23 International Business Machines Corporation Self-aligned metal process for field effect transistor integrated circuits
JPS5772321A (en) * 1980-10-24 1982-05-06 Toshiba Corp Manufacture of seiconductor device
US4324038A (en) * 1980-11-24 1982-04-13 Bell Telephone Laboratories, Incorporated Method of fabricating MOS field effect transistors
JPS57126147A (en) * 1981-01-28 1982-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPS5842227A (ja) * 1981-09-07 1983-03-11 Toshiba Corp 半導体装置の製造方法
US4419809A (en) * 1981-12-30 1983-12-13 International Business Machines Corporation Fabrication process of sub-micrometer channel length MOSFETs
US4419810A (en) * 1981-12-30 1983-12-13 International Business Machines Corporation Self-aligned field effect transistor process
US4507171A (en) * 1982-08-06 1985-03-26 International Business Machines Corporation Method for contacting a narrow width PN junction region
US4507853A (en) * 1982-08-23 1985-04-02 Texas Instruments Incorporated Metallization process for integrated circuits
US4489481A (en) * 1982-09-20 1984-12-25 Texas Instruments Incorporated Insulator and metallization method for VLSI devices with anisotropically-etched contact holes
FR2549293B1 (fr) * 1983-07-13 1986-10-10 Silicium Semiconducteur Ssc Transistor bipolaire haute frequence et son procede de fabrication
US4546535A (en) * 1983-12-12 1985-10-15 International Business Machines Corporation Method of making submicron FET structure

Also Published As

Publication number Publication date
JPS62500134A (ja) 1987-01-16
ES8704036A1 (es) 1987-03-01
EP0191057A1 (fr) 1986-08-20
US4641420A (en) 1987-02-10
KR930010753B1 (en) 1993-11-10
CA1225466A (fr) 1987-08-11
IE56930B1 (en) 1992-01-29
DE3575364D1 (de) 1990-02-15
KR860700311A (ko) 1986-08-01
ES546447A0 (es) 1987-03-01
EP0191057B1 (fr) 1990-01-10
JP2530312B2 (ja) 1996-09-04
WO1986001639A1 (fr) 1986-03-13
IE852124L (en) 1986-02-28

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