SG190358A1 - Alloy for seed layer in magnetic recording medium, and sputtering target material - Google Patents
Alloy for seed layer in magnetic recording medium, and sputtering target material Download PDFInfo
- Publication number
- SG190358A1 SG190358A1 SG2013039078A SG2013039078A SG190358A1 SG 190358 A1 SG190358 A1 SG 190358A1 SG 2013039078 A SG2013039078 A SG 2013039078A SG 2013039078 A SG2013039078 A SG 2013039078A SG 190358 A1 SG190358 A1 SG 190358A1
- Authority
- SG
- Singapore
- Prior art keywords
- alloy
- poor
- seed layer
- good
- comparative example
- Prior art date
Links
- 239000000956 alloy Substances 0.000 title claims abstract description 54
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 54
- 238000005477 sputtering target Methods 0.000 title claims description 12
- 239000013077 target material Substances 0.000 title claims description 12
- 229910052742 iron Inorganic materials 0.000 claims abstract description 15
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 14
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 229910052796 boron Inorganic materials 0.000 claims abstract description 11
- 229910052738 indium Inorganic materials 0.000 claims abstract description 11
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 10
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 10
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 10
- 229910052718 tin Inorganic materials 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 10
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 9
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims description 4
- 230000005389 magnetism Effects 0.000 abstract description 10
- 230000035699 permeability Effects 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 39
- 239000013078 crystal Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 12
- 230000004907 flux Effects 0.000 description 11
- 238000000465 moulding Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010791 quenching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000005280 amorphization Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010079 rubber tapping Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 101000993059 Homo sapiens Hereditary hemochromatosis protein Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021472 group 8 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
- C22C19/05—Alloys based on nickel or cobalt based on nickel with chromium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/008—Ferrous alloys, e.g. steel alloys containing tin
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/02—Ferrous alloys, e.g. steel alloys containing silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/06—Ferrous alloys, e.g. steel alloys containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
- C22C38/105—Ferrous alloys, e.g. steel alloys containing cobalt containing Co and Ni
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010259713 | 2010-11-22 | ||
| JP2011094594A JP5726615B2 (ja) | 2010-11-22 | 2011-04-21 | 磁気記録媒体のシード層用合金およびスパッタリングターゲット材 |
| PCT/JP2011/076529 WO2012070464A1 (ja) | 2010-11-22 | 2011-11-17 | 磁気記録媒体のシード層用合金およびスパッタリングターゲット材 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG190358A1 true SG190358A1 (en) | 2013-06-28 |
Family
ID=46145808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013039078A SG190358A1 (en) | 2010-11-22 | 2011-11-17 | Alloy for seed layer in magnetic recording medium, and sputtering target material |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5726615B2 (ja) |
| CN (1) | CN103221999B (ja) |
| MY (1) | MY159936A (ja) |
| SG (1) | SG190358A1 (ja) |
| TW (1) | TWI512113B (ja) |
| WO (1) | WO2012070464A1 (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6050050B2 (ja) * | 2012-08-14 | 2016-12-21 | 山陽特殊製鋼株式会社 | Ｆｅ−Ｃｏ系合金スパッタリングターゲット材およびその製造方法 |
| CN104651788B (zh) * | 2013-11-21 | 2017-03-15 | 安泰科技股份有限公司 | Ni‑Fe‑W合金靶材及其制造方法 |
| CN103938030B (zh) * | 2014-04-29 | 2015-12-09 | 深圳市天瑞科技有限公司 | 一种镍基软磁材料的制备方法 |
| CN105420678B (zh) * | 2014-09-15 | 2018-03-09 | 安泰科技股份有限公司 | 一种Al添加Ni‑W合金靶材及其制造方法 |
| US9685184B1 (en) * | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
| JP6502672B2 (ja) * | 2015-01-09 | 2019-04-17 | 山陽特殊製鋼株式会社 | Ｎｉ−Ｃｕ系磁気記録媒体のシード層用合金およびスパッタリングターゲット材並びに磁気記録媒体 |
| JP6581780B2 (ja) * | 2015-02-09 | 2019-09-25 | 山陽特殊製鋼株式会社 | スパッタ性に優れたＮｉ系ターゲット材 |
| CN107408397B (zh) * | 2015-03-12 | 2019-07-05 | 山阳特殊制钢株式会社 | Ni系溅射靶材和磁记录介质 |
| JP6431496B2 (ja) * | 2016-04-13 | 2018-11-28 | 山陽特殊製鋼株式会社 | 磁気記録媒体のシード層用合金、スパッタリングターゲット材および磁気記録媒体 |
| JP2018053280A (ja) * | 2016-09-27 | 2018-04-05 | 山陽特殊製鋼株式会社 | ＮｉＴａ系合金、ターゲット材および磁気記録媒体 |
| JP7157573B2 (ja) * | 2018-07-04 | 2022-10-20 | 山陽特殊製鋼株式会社 | 磁気記録媒体のシード層用Ｎｉ系合金 |
| JP7274361B2 (ja) * | 2019-06-19 | 2023-05-16 | 山陽特殊製鋼株式会社 | 磁気記録媒体のシード層用合金 |
| CN113948265B (zh) * | 2021-10-20 | 2024-08-13 | 泉州天智合金材料科技有限公司 | 一种铁基非晶软磁合金粉末及其制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4224804B2 (ja) * | 2002-06-19 | 2009-02-18 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体の製造方法 |
| JP4812254B2 (ja) * | 2004-01-08 | 2011-11-09 | 富士電機株式会社 | 垂直磁気記録媒体、および、その製造方法 |
| US20070253103A1 (en) * | 2006-04-27 | 2007-11-01 | Heraeus, Inc. | Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target |
| US10068603B2 (en) * | 2007-09-14 | 2018-09-04 | Fuji Electric Co., Ltd. | Magnetic recording medium |
| JP2009116952A (ja) * | 2007-11-06 | 2009-05-28 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体およびこれを用いた磁気記憶装置 |
| JP4993296B2 (ja) * | 2007-11-29 | 2012-08-08 | 富士電機株式会社 | 垂直磁気記録媒体 |
| JP5337451B2 (ja) * | 2008-11-06 | 2013-11-06 | エイチジーエスティーネザーランドビーブイ | 垂直磁気記録媒体 |
| JP4697337B2 (ja) * | 2010-01-18 | 2011-06-08 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体 |
-
2011
- 2011-04-21 JP JP2011094594A patent/JP5726615B2/ja active Active
- 2011-11-17 WO PCT/JP2011/076529 patent/WO2012070464A1/ja active Application Filing
- 2011-11-17 CN CN201180055776.8A patent/CN103221999B/zh active Active
- 2011-11-17 SG SG2013039078A patent/SG190358A1/en unknown
- 2011-11-17 MY MYPI2013700827A patent/MY159936A/en unknown
- 2011-11-22 TW TW100142726A patent/TWI512113B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012128933A (ja) | 2012-07-05 |
| JP5726615B2 (ja) | 2015-06-03 |
| CN103221999B (zh) | 2016-10-19 |
| WO2012070464A1 (ja) | 2012-05-31 |
| TWI512113B (zh) | 2015-12-11 |
| MY159936A (en) | 2017-02-15 |
| TW201233814A (en) | 2012-08-16 |
| CN103221999A (zh) | 2013-07-24 |
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