SG177816A1 - Methods of forming bonded semiconductor structures, and semiconductor structures formed by such methods - Google Patents
Methods of forming bonded semiconductor structures, and semiconductor structures formed by such methods Download PDFInfo
- Publication number
- SG177816A1 SG177816A1 SG2011042017A SG2011042017A SG177816A1 SG 177816 A1 SG177816 A1 SG 177816A1 SG 2011042017 A SG2011042017 A SG 2011042017A SG 2011042017 A SG2011042017 A SG 2011042017A SG 177816 A1 SG177816 A1 SG 177816A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor structure
- bonding surface
- bonding
- semiconductor
- dielectric material
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 706
- 238000000034 method Methods 0.000 title claims abstract description 109
- 239000000853 adhesive Substances 0.000 claims abstract description 10
- 230000001070 adhesive effect Effects 0.000 claims abstract description 10
- 239000003989 dielectric material Substances 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 230000003746 surface roughness Effects 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 claims description 9
- 238000006731 degradation reaction Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 8
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 8
- 238000000354 decomposition reaction Methods 0.000 claims description 7
- 238000010943 off-gassing Methods 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 47
- 230000008569 process Effects 0.000 description 44
- 239000000377 silicon dioxide Substances 0.000 description 21
- 235000012239 silicon dioxide Nutrition 0.000 description 21
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 14
- 230000010354 integration Effects 0.000 description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910005103 Si3Ny Inorganic materials 0.000 description 1
- 241000724291 Tobacco streak virus Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Wire Bonding (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/837,326 US8481406B2 (en) | 2010-07-15 | 2010-07-15 | Methods of forming bonded semiconductor structures |
| FR1055965A FR2963159B1 (fr) | 2010-07-21 | 2010-07-21 | Procedes de formation de structures semi-conductrices liees, et structures semi-conductrices formees par ces procedes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG177816A1 true SG177816A1 (en) | 2012-02-28 |
Family
ID=45515417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011042017A SG177816A1 (en) | 2010-07-15 | 2011-06-09 | Methods of forming bonded semiconductor structures, and semiconductor structures formed by such methods |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101238732B1 (zh) |
| CN (1) | CN102339768B (zh) |
| SG (1) | SG177816A1 (zh) |
| TW (1) | TWI464810B (zh) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8791723B2 (en) * | 2012-08-17 | 2014-07-29 | Alpha And Omega Semiconductor Incorporated | Three-dimensional high voltage gate driver integrated circuit |
| KR101395235B1 (ko) | 2013-10-31 | 2014-05-16 | (주)실리콘화일 | 배면광 포토다이오드를 이용한 이미지 센서 및 그 제조방법 |
| US9355205B2 (en) * | 2013-12-20 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus of a three dimensional integrated circuit |
| EP3216050B1 (en) * | 2014-11-05 | 2021-09-08 | Corning Incorporated | Bottom-up electrolytic via plating method |
| TWI603393B (zh) * | 2015-05-26 | 2017-10-21 | 台虹科技股份有限公司 | 半導體裝置的製造方法 |
| CN106783645A (zh) * | 2016-11-29 | 2017-05-31 | 东莞市广信知识产权服务有限公司 | 一种金刚石与GaN晶圆片直接键合的方法 |
| CN107275416A (zh) * | 2017-05-09 | 2017-10-20 | 浙江大学 | 一种光探测器及其制备方法 |
| US10917966B2 (en) | 2018-01-29 | 2021-02-09 | Corning Incorporated | Articles including metallized vias |
| US10727219B2 (en) * | 2018-02-15 | 2020-07-28 | Invensas Bonding Technologies, Inc. | Techniques for processing devices |
| US11296053B2 (en) | 2019-06-26 | 2022-04-05 | Invensas Bonding Technologies, Inc. | Direct bonded stack structures for increased reliability and improved yield in microelectronics |
| GB2595447A (en) * | 2020-05-18 | 2021-12-01 | Oaklands Plastics Ltd | Hoarding panel & method of manufacture |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
| FR2894990B1 (fr) * | 2005-12-21 | 2008-02-22 | Soitec Silicon On Insulator | Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede |
| FR2837981B1 (fr) * | 2002-03-28 | 2005-01-07 | Commissariat Energie Atomique | Procede de manipulation de couches semiconductrices pour leur amincissement |
| WO2004061961A1 (en) * | 2002-12-31 | 2004-07-22 | Massachusetts Institute Of Technology | Multi-layer integrated semiconductor structure having an electrical shielding portion |
| KR100618837B1 (ko) | 2004-06-22 | 2006-09-01 | 삼성전자주식회사 | 웨이퍼 레벨 패키지를 위한 얇은 웨이퍼들의 스택을형성하는 방법 |
| CN100517623C (zh) * | 2006-12-05 | 2009-07-22 | 中芯国际集成电路制造(上海)有限公司 | 晶片压焊键合方法及其结构 |
| FR2910177B1 (fr) * | 2006-12-18 | 2009-04-03 | Soitec Silicon On Insulator | Couche tres fine enterree |
| JP5512102B2 (ja) * | 2007-08-24 | 2014-06-04 | 本田技研工業株式会社 | 半導体装置 |
| FR2931014B1 (fr) | 2008-05-06 | 2010-09-03 | Soitec Silicon On Insulator | Procede d'assemblage de plaques par adhesion moleculaire |
| KR101548173B1 (ko) * | 2008-09-18 | 2015-08-31 | 삼성전자주식회사 | 실리콘 다이렉트 본딩(ｓｄｂ)을 이용한 임시 웨이퍼 임시 본딩 방법, 및 그 본딩 방법을 이용한 반도체 소자 및 반도체 소자 제조 방법 |
-
2011
- 2011-06-09 SG SG2011042017A patent/SG177816A1/en unknown
- 2011-06-20 TW TW100121505A patent/TWI464810B/zh active
- 2011-06-21 KR KR1020110060306A patent/KR101238732B1/ko active IP Right Grant
- 2011-07-14 CN CN201110197168.2A patent/CN102339768B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102339768A (zh) | 2012-02-01 |
| CN102339768B (zh) | 2015-06-10 |
| TW201212131A (en) | 2012-03-16 |
| KR101238732B1 (ko) | 2013-03-04 |
| KR20120007960A (ko) | 2012-01-25 |
| TWI464810B (zh) | 2014-12-11 |
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