KR101238732B1 - 본딩된 반도체 구조체들을 형성하는 방법들, 및 상기 방법들에 의하여 형성된 반도체 구조체들 - Google Patents

본딩된 반도체 구조체들을 형성하는 방법들, 및 상기 방법들에 의하여 형성된 반도체 구조체들 Download PDF

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Publication number
KR101238732B1
KR101238732B1 KR1020110060306A KR20110060306A KR101238732B1 KR 101238732 B1 KR101238732 B1 KR 101238732B1 KR 1020110060306 A KR1020110060306 A KR 1020110060306A KR 20110060306 A KR20110060306 A KR 20110060306A KR 101238732 B1 KR101238732 B1 KR 101238732B1
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KR
South Korea
Prior art keywords
semiconductor structure
bonding surface
bonding
semiconductor
dielectric material
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KR1020110060306A
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English (en)
Korean (ko)
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KR20120007960A (ko
Inventor
마리암 사다카
요누츠 라두
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소이텍
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Priority claimed from US12/837,326 external-priority patent/US8481406B2/en
Priority claimed from FR1055965A external-priority patent/FR2963159B1/fr
Application filed by 소이텍 filed Critical 소이텍
Publication of KR20120007960A publication Critical patent/KR20120007960A/ko
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Publication of KR101238732B1 publication Critical patent/KR101238732B1/ko

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Wire Bonding (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
KR1020110060306A 2010-07-15 2011-06-21 본딩된 반도체 구조체들을 형성하는 방법들, 및 상기 방법들에 의하여 형성된 반도체 구조체들 KR101238732B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/837,326 US8481406B2 (en) 2010-07-15 2010-07-15 Methods of forming bonded semiconductor structures
US12/837,326 2010-07-15
FR1055965A FR2963159B1 (fr) 2010-07-21 2010-07-21 Procedes de formation de structures semi-conductrices liees, et structures semi-conductrices formees par ces procedes
FR1055965 2010-07-21

Publications (2)

Publication Number Publication Date
KR20120007960A KR20120007960A (ko) 2012-01-25
KR101238732B1 true KR101238732B1 (ko) 2013-03-04

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KR1020110060306A KR101238732B1 (ko) 2010-07-15 2011-06-21 본딩된 반도체 구조체들을 형성하는 방법들, 및 상기 방법들에 의하여 형성된 반도체 구조체들

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KR (1) KR101238732B1 (zh)
CN (1) CN102339768B (zh)
SG (1) SG177816A1 (zh)
TW (1) TWI464810B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8791723B2 (en) * 2012-08-17 2014-07-29 Alpha And Omega Semiconductor Incorporated Three-dimensional high voltage gate driver integrated circuit
KR101395235B1 (ko) 2013-10-31 2014-05-16 (주)실리콘화일 배면광 포토다이오드를 이용한 이미지 센서 및 그 제조방법
US9355205B2 (en) * 2013-12-20 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus of a three dimensional integrated circuit
US10932371B2 (en) * 2014-11-05 2021-02-23 Corning Incorporated Bottom-up electrolytic via plating method
TWI603393B (zh) * 2015-05-26 2017-10-21 台虹科技股份有限公司 半導體裝置的製造方法
CN106783645A (zh) * 2016-11-29 2017-05-31 东莞市广信知识产权服务有限公司 一种金刚石与GaN晶圆片直接键合的方法
CN107275416A (zh) * 2017-05-09 2017-10-20 浙江大学 一种光探测器及其制备方法
US10917966B2 (en) 2018-01-29 2021-02-09 Corning Incorporated Articles including metallized vias
US10727219B2 (en) * 2018-02-15 2020-07-28 Invensas Bonding Technologies, Inc. Techniques for processing devices
US11462419B2 (en) 2018-07-06 2022-10-04 Invensas Bonding Technologies, Inc. Microelectronic assemblies
US11296053B2 (en) 2019-06-26 2022-04-05 Invensas Bonding Technologies, Inc. Direct bonded stack structures for increased reliability and improved yield in microelectronics
GB2595447A (en) * 2020-05-18 2021-12-01 Oaklands Plastics Ltd Hoarding panel & method of manufacture
US11631647B2 (en) 2020-06-30 2023-04-18 Adeia Semiconductor Bonding Technologies Inc. Integrated device packages with integrated device die and dummy element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030211705A1 (en) 2000-02-16 2003-11-13 Ziptronix, Inc. Method for low temperature bonding and bonded structure
KR100618837B1 (ko) 2004-06-22 2006-09-01 삼성전자주식회사 웨이퍼 레벨 패키지를 위한 얇은 웨이퍼들의 스택을형성하는 방법
WO2009135800A2 (en) 2008-05-06 2009-11-12 S.O.I. Tec Silicon On Insulator Technologies A method of assembling wafers by molecular bonding

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2816445B1 (fr) * 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
FR2894990B1 (fr) * 2005-12-21 2008-02-22 Soitec Silicon On Insulator Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
FR2837981B1 (fr) * 2002-03-28 2005-01-07 Commissariat Energie Atomique Procede de manipulation de couches semiconductrices pour leur amincissement
US7067909B2 (en) * 2002-12-31 2006-06-27 Massachusetts Institute Of Technology Multi-layer integrated semiconductor structure having an electrical shielding portion
CN100517623C (zh) * 2006-12-05 2009-07-22 中芯国际集成电路制造(上海)有限公司 晶片压焊键合方法及其结构
FR2910177B1 (fr) * 2006-12-18 2009-04-03 Soitec Silicon On Insulator Couche tres fine enterree
JP5512102B2 (ja) * 2007-08-24 2014-06-04 本田技研工業株式会社 半導体装置
KR101548173B1 (ko) * 2008-09-18 2015-08-31 삼성전자주식회사 실리콘 다이렉트 본딩(ｓｄｂ)을 이용한 임시 웨이퍼 임시 본딩 방법, 및 그 본딩 방법을 이용한 반도체 소자 및 반도체 소자 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030211705A1 (en) 2000-02-16 2003-11-13 Ziptronix, Inc. Method for low temperature bonding and bonded structure
KR100618837B1 (ko) 2004-06-22 2006-09-01 삼성전자주식회사 웨이퍼 레벨 패키지를 위한 얇은 웨이퍼들의 스택을형성하는 방법
WO2009135800A2 (en) 2008-05-06 2009-11-12 S.O.I. Tec Silicon On Insulator Technologies A method of assembling wafers by molecular bonding

Also Published As

Publication number Publication date
TWI464810B (zh) 2014-12-11
KR20120007960A (ko) 2012-01-25
SG177816A1 (en) 2012-02-28
CN102339768A (zh) 2012-02-01
CN102339768B (zh) 2015-06-10
TW201212131A (en) 2012-03-16

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