SG170691A1 - Method of cleaning and micro-etching semiconductor wafers - Google Patents
Method of cleaning and micro-etching semiconductor wafersInfo
- Publication number
- SG170691A1 SG170691A1 SG201007502-6A SG2010075026A SG170691A1 SG 170691 A1 SG170691 A1 SG 170691A1 SG 2010075026 A SG2010075026 A SG 2010075026A SG 170691 A1 SG170691 A1 SG 170691A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor wafers
- micro
- cleaning
- etching semiconductor
- etching
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 235000012431 wafers Nutrition 0.000 title abstract 5
- 238000004140 cleaning Methods 0.000 title abstract 3
- 238000005530 etching Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 239000002173 cutting fluid Substances 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27894209P | 2009-10-14 | 2009-10-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG170691A1 true SG170691A1 (en) | 2011-05-30 |
Family
ID=43568417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG201007502-6A SG170691A1 (en) | 2009-10-14 | 2010-10-13 | Method of cleaning and micro-etching semiconductor wafers |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8722544B2 (de) |
| EP (1) | EP2312618B1 (de) |
| JP (2) | JP2011124546A (de) |
| KR (1) | KR101697997B1 (de) |
| CN (1) | CN102157355B (de) |
| SG (1) | SG170691A1 (de) |
| TW (1) | TWI445806B (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009012827A1 (de) * | 2009-03-03 | 2010-10-07 | Gebr. Schmid Gmbh & Co. | Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür |
| US20170069480A9 (en) * | 2009-10-14 | 2017-03-09 | Sun Chemical Corporation | Method of cleaning and micro-etching semiconductor wafers |
| JP2012248738A (ja) * | 2011-05-30 | 2012-12-13 | Dai Ichi Kogyo Seiyaku Co Ltd | シリコンウェハ用表面処理剤組成物 |
| JP5824706B1 (ja) * | 2014-05-14 | 2015-11-25 | 大同化学工業株式会社 | シリコンウエーハの表面処理組成物 |
| CN108550639B (zh) * | 2018-03-21 | 2020-08-21 | 台州市棱智塑业有限公司 | 一种硅异质结太阳能电池界面处理剂及处理方法 |
| CN116970446B (zh) * | 2023-09-22 | 2024-01-09 | 山东天岳先进科技股份有限公司 | 碳化硅单晶材料amb覆铜的前处理溶液、产品及应用 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5259888A (en) | 1992-02-03 | 1993-11-09 | Sachem, Inc. | Process for cleaning quartz and silicon surfaces |
| US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5674832A (en) | 1995-04-27 | 1997-10-07 | Witco Corporation | Cationic compositions containing diol and/or diol alkoxylate |
| US5989353A (en) | 1996-10-11 | 1999-11-23 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| US6204297B1 (en) | 1996-11-26 | 2001-03-20 | Rhodia Inc. | Nonionic gemini surfactants |
| US20010039251A1 (en) * | 1998-06-12 | 2001-11-08 | Krishna G. Sachdev | Removal of screening paste residue with quaternary ammonium hydroxide-based aqueous cleaning compositions |
| JP3314921B2 (ja) | 1999-06-08 | 2002-08-19 | 三菱住友シリコン株式会社 | 半導体材料の切断・加工方法 |
| AU5923400A (en) | 1999-07-09 | 2001-01-30 | Dow Chemical Company, The | Polymerization of ethylene oxide using metal cyanide catalysts |
| US20020000239A1 (en) | 1999-09-27 | 2002-01-03 | Krishna G. Sachdev | Removal of cured silicone adhesive for reworking electronic components |
| US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| TWI276682B (en) | 2001-11-16 | 2007-03-21 | Mitsubishi Chem Corp | Substrate surface cleaning liquid mediums and cleaning method |
| KR100913557B1 (ko) * | 2002-01-28 | 2009-08-21 | 미쓰비시 가가꾸 가부시키가이샤 | 반도체 디바이스용 기판의 세정액 및 세정방법 |
| JP4304988B2 (ja) * | 2002-01-28 | 2009-07-29 | 三菱化学株式会社 | 半導体デバイス用基板の洗浄方法 |
| JP2003282520A (ja) * | 2002-03-22 | 2003-10-03 | Sanyo Electric Co Ltd | 容器の洗浄方法及び太陽電池の製造方法 |
| CN1312099C (zh) | 2002-04-26 | 2007-04-25 | 巴斯福股份公司 | 烷氧基化物混合物及包含该混合物的洗涤剂 |
| TWI324362B (en) | 2003-01-10 | 2010-05-01 | Kanto Kagaku | Cleaning solution for semiconductor substrate |
| US7442675B2 (en) * | 2003-06-18 | 2008-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning composition and method of cleaning semiconductor substrate |
| US20060135045A1 (en) | 2004-12-17 | 2006-06-22 | Jinru Bian | Polishing compositions for reducing erosion in semiconductor wafers |
| US7939482B2 (en) | 2005-05-25 | 2011-05-10 | Freescale Semiconductor, Inc. | Cleaning solution for a semiconductor wafer |
| US8058219B2 (en) | 2005-10-13 | 2011-11-15 | Advanced Technology Materials, Inc. | Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant |
| JP2007200944A (ja) * | 2006-01-23 | 2007-08-09 | Tokuyama Corp | 基板洗浄液 |
| US7906474B2 (en) * | 2007-01-11 | 2011-03-15 | Dow Global Technologies Llc | Alkoxylate blend surfactants |
| KR20080106638A (ko) | 2007-06-04 | 2008-12-09 | (주)이그잭스 | 유기막 박리제 조성물 |
| DE102007030957A1 (de) | 2007-07-04 | 2009-01-08 | Siltronic Ag | Verfahren zum Reinigen einer Halbleiterscheibe mit einer Reinigungslösung |
| WO2009058275A1 (en) | 2007-10-29 | 2009-05-07 | Ekc Technology, Inc. | Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions |
| JP2009200360A (ja) * | 2008-02-22 | 2009-09-03 | Tkx:Kk | シリコン部材の表面処理方法 |
| JP5302551B2 (ja) * | 2008-02-28 | 2013-10-02 | 林純薬工業株式会社 | シリコン異方性エッチング液組成物 |
| JP2009231354A (ja) * | 2008-03-19 | 2009-10-08 | Fujifilm Corp | 半導体デバイス用洗浄液、および洗浄方法 |
| KR20100125448A (ko) * | 2008-03-25 | 2010-11-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 결정성 태양 전지들을 위한 표면 세정 및 텍스처링 프로세스 |
| EP2310481B1 (de) * | 2008-06-18 | 2014-04-30 | Dow Global Technologies LLC | Reinigungsmittel mit mittleren alkoxylaten |
| JP5339880B2 (ja) * | 2008-12-11 | 2013-11-13 | 株式会社新菱 | シリコン基板のエッチング液およびシリコン基板の表面加工方法 |
| JP2010226089A (ja) | 2009-01-14 | 2010-10-07 | Rohm & Haas Electronic Materials Llc | 半導体ウェハをクリーニングする方法 |
| US8329046B2 (en) * | 2009-02-05 | 2012-12-11 | Asia Union Electronic Chemical Corporation | Methods for damage etch and texturing of silicon single crystal substrates |
| WO2011010739A1 (ja) * | 2009-07-23 | 2011-01-27 | 国立大学法人名古屋大学 | 微細構造体の製造方法 |
| US7955989B2 (en) | 2009-09-24 | 2011-06-07 | Rohm And Haas Electronic Materials Llc | Texturing semiconductor substrates |
| EP2337089A3 (de) * | 2009-12-17 | 2013-12-11 | Rohm and Haas Electronic Materials LLC | Verbessertes Verfahren zum Strukturieren von Halbleitersubstraten |
-
2010
- 2010-10-13 EP EP10187469.1A patent/EP2312618B1/de not_active Not-in-force
- 2010-10-13 SG SG201007502-6A patent/SG170691A1/en unknown
- 2010-10-13 TW TW099134839A patent/TWI445806B/zh not_active IP Right Cessation
- 2010-10-13 JP JP2010230666A patent/JP2011124546A/ja active Pending
- 2010-10-14 US US12/904,609 patent/US8722544B2/en not_active Expired - Fee Related
- 2010-10-14 KR KR1020100100527A patent/KR101697997B1/ko not_active Application Discontinuation
- 2010-10-14 CN CN201010602674.0A patent/CN102157355B/zh not_active Expired - Fee Related
-
2015
- 2015-05-26 JP JP2015106341A patent/JP6058070B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102157355B (zh) | 2014-09-03 |
| TWI445806B (zh) | 2014-07-21 |
| KR101697997B1 (ko) | 2017-01-19 |
| US20110250762A1 (en) | 2011-10-13 |
| JP2015207768A (ja) | 2015-11-19 |
| US8722544B2 (en) | 2014-05-13 |
| CN102157355A (zh) | 2011-08-17 |
| KR20110040737A (ko) | 2011-04-20 |
| EP2312618B1 (de) | 2016-02-10 |
| EP2312618A3 (de) | 2014-03-12 |
| JP6058070B2 (ja) | 2017-01-11 |
| JP2011124546A (ja) | 2011-06-23 |
| TW201132743A (en) | 2011-10-01 |
| EP2312618A2 (de) | 2011-04-20 |
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