SG166717A1 - A method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of sige deposited on the front side - Google Patents
A method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of sige deposited on the front sideInfo
- Publication number
- SG166717A1 SG166717A1 SG201001622-8A SG2010016228A SG166717A1 SG 166717 A1 SG166717 A1 SG 166717A1 SG 2010016228 A SG2010016228 A SG 2010016228A SG 166717 A1 SG166717 A1 SG 166717A1
- Authority
- SG
- Singapore
- Prior art keywords
- single crystal
- crystal substrate
- silicon single
- back side
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09006476.7A EP2251897B1 (de) | 2009-05-13 | 2009-05-13 | Verfahren zur Herstellung eines Wafers aus einem Siliziumeinkristallsubstrat mit einer Vorder- und einer Rückseite und einer auf der Vorderseite gelagerten SiGe-Schicht |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG166717A1 true SG166717A1 (en) | 2010-12-29 |
Family
ID=41055122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG201001622-8A SG166717A1 (en) | 2009-05-13 | 2010-03-08 | A method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of sige deposited on the front side |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8093143B2 (de) |
| EP (1) | EP2251897B1 (de) |
| JP (1) | JP5159824B2 (de) |
| KR (1) | KR101122387B1 (de) |
| CN (1) | CN101887848B (de) |
| SG (1) | SG166717A1 (de) |
| TW (1) | TWI411032B (de) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8115195B2 (en) * | 2008-03-20 | 2012-02-14 | Siltronic Ag | Semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer |
| IT1406644B1 (it) | 2010-04-29 | 2014-03-07 | Abbondanza | Substrato (fetta) di materiale semiconduttore con sovrastanti strati eteroepitassiali assumenti una struttura sandwich, idoneo per la fabbricazione di componenti elettronici ibridi. |
| WO2012147605A1 (ja) * | 2011-04-26 | 2012-11-01 | 旭硝子株式会社 | 非酸化物単結晶基板の研磨方法 |
| JP6051524B2 (ja) * | 2012-01-18 | 2016-12-27 | セイコーエプソン株式会社 | 半導体基板及び半導体基板の製造方法 |
| CN103523738B (zh) | 2012-07-06 | 2016-07-06 | 无锡华润上华半导体有限公司 | 微机电系统薄片及其制备方法 |
| CN103346078A (zh) * | 2013-06-26 | 2013-10-09 | 上海宏力半导体制造有限公司 | 化学机械研磨的方法 |
| US9721792B2 (en) | 2013-09-16 | 2017-08-01 | Applied Materials, Inc. | Method of forming strain-relaxed buffer layers |
| US9520696B2 (en) | 2014-03-04 | 2016-12-13 | Princeton Optronics Inc. | Processes for making reliable VCSEL devices and VCSEL arrays |
| US9881788B2 (en) * | 2014-05-22 | 2018-01-30 | Lam Research Corporation | Back side deposition apparatus and applications |
| CN104157577B (zh) * | 2014-08-26 | 2016-11-02 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法 |
| US10818611B2 (en) | 2015-07-01 | 2020-10-27 | Ii-Vi Delaware, Inc. | Stress relief in semiconductor wafers |
| FR3064398B1 (fr) * | 2017-03-21 | 2019-06-07 | Soitec | Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure |
| US10851457B2 (en) | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
| US10205303B1 (en) | 2017-10-18 | 2019-02-12 | Lumentum Operations Llc | Vertical-cavity surface-emitting laser thin wafer bowing control |
| KR102594342B1 (ko) * | 2018-03-12 | 2023-10-26 | 도쿄엘렉트론가부시키가이샤 | 기판의 휨 수정 방법, 컴퓨터 기억 매체 및 기판 휨 수정 장치 |
| CN110852021B (zh) * | 2018-07-26 | 2024-02-06 | 上海新昇半导体科技有限公司 | 基于模拟方式获得外延平坦度的方法 |
| KR20230037057A (ko) | 2019-08-16 | 2023-03-15 | 램 리써치 코포레이션 | 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 |
| EP3965141A1 (de) | 2020-09-04 | 2022-03-09 | Siltronic AG | Verfahren zur abscheidung einer silizium-germanium-schicht auf einem substrat |
| CN113948390B (zh) * | 2021-08-30 | 2024-03-19 | 西安电子科技大学 | 一种基于衬底背面外延层的硅基AlGaN/GaN HEMT及制备方法 |
| CN113964034B (zh) * | 2021-08-30 | 2024-03-19 | 西安电子科技大学 | 一种基于衬底背面GeSnSi外延层的硅基AlGaN/GaN HEMT及制备方法 |
| CN113948389B (zh) * | 2021-08-30 | 2023-03-14 | 西安电子科技大学 | 一种基于衬底背面SiSn外延层的硅基AlGaN/GaN HEMT及制备方法 |
| CN113948391B (zh) * | 2021-08-30 | 2023-11-21 | 西安电子科技大学 | 一种硅基AlGaN/GaN HEMT器件及制备方法 |
| CN114242766A (zh) * | 2021-11-08 | 2022-03-25 | 上海新硅聚合半导体有限公司 | 一种复合衬底结构及其形貌改善方法 |
| CN116666500B (zh) * | 2023-07-24 | 2023-11-03 | 上海铭锟半导体有限公司 | 锗光电探测器及通过热失配应力提高其长波响应的方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4925809A (en) * | 1987-05-23 | 1990-05-15 | Osaka Titanium Co., Ltd. | Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor |
| EP0798765A3 (de) * | 1996-03-28 | 1998-08-05 | Shin-Etsu Handotai Company Limited | Verfahren zur Herstellung einer Halbleiterscheibe mit einer Schicht zur Verhinderung der Verdampfung von Dotierstoffen auf der einen Oberfläche und einer epitaktischen Schicht auf der anderen Oberfläche |
| JP4207548B2 (ja) * | 2002-11-28 | 2009-01-14 | 株式会社Ｓｕｍｃｏ | 半導体基板の製造方法及び電界効果型トランジスタの製造方法並びに半導体基板及び電界効果型トランジスタ |
| US7198671B2 (en) | 2001-07-11 | 2007-04-03 | Matsushita Electric Industrial Co., Ltd. | Layered substrates for epitaxial processing, and device |
| JP4378904B2 (ja) * | 2001-09-28 | 2009-12-09 | 株式会社Ｓｕｍｃｏ | 半導体基板の製造方法及び電界効果型トランジスタの製造方法 |
| JP4325139B2 (ja) * | 2001-11-07 | 2009-09-02 | 株式会社Ｓｕｍｃｏ | 半導体基板の製造方法及び電界効果型トランジスタの製造方法 |
| EP1315199A1 (de) * | 2001-11-22 | 2003-05-28 | ETH Zürich | Herstellung von Silizium-Germanium-Strukturen hoher Beweglichtkeit durch Niederenergyplasma unterstützte chemische Dampfabscheidung |
| US7157119B2 (en) * | 2002-06-25 | 2007-01-02 | Ppg Industries Ohio, Inc. | Method and compositions for applying multiple overlying organic pigmented decorations on ceramic substrates |
| SG114574A1 (en) * | 2002-09-25 | 2005-09-28 | Siltronic Singapore Pte Ltd | Two layer lto backside seal for a wafer |
| JP4682508B2 (ja) * | 2003-11-14 | 2011-05-11 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
| US7880278B2 (en) * | 2006-05-16 | 2011-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit having stress tuning layer |
| US7608526B2 (en) * | 2006-07-24 | 2009-10-27 | Asm America, Inc. | Strained layers within semiconductor buffer structures |
| FR2921515B1 (fr) | 2007-09-25 | 2010-07-30 | Commissariat Energie Atomique | Procede de fabrication de structures semiconductrices utiles pour la realisation de substrats semiconducteur- sur-isolant, et ses applications. |
-
2009
- 2009-05-13 EP EP09006476.7A patent/EP2251897B1/de active Active
-
2010
- 2010-03-04 CN CN2010101290412A patent/CN101887848B/zh active Active
- 2010-03-08 SG SG201001622-8A patent/SG166717A1/en unknown
- 2010-03-16 TW TW099107597A patent/TWI411032B/zh active
- 2010-03-16 US US12/724,584 patent/US8093143B2/en active Active
- 2010-05-13 JP JP2010110848A patent/JP5159824B2/ja active Active
- 2010-05-13 KR KR1020100045055A patent/KR101122387B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JP5159824B2 (ja) | 2013-03-13 |
| US8093143B2 (en) | 2012-01-10 |
| EP2251897B1 (de) | 2016-01-06 |
| TWI411032B (zh) | 2013-10-01 |
| EP2251897A1 (de) | 2010-11-17 |
| JP2010267969A (ja) | 2010-11-25 |
| TW201041029A (en) | 2010-11-16 |
| CN101887848B (zh) | 2012-11-14 |
| KR101122387B1 (ko) | 2012-03-23 |
| KR20100122873A (ko) | 2010-11-23 |
| CN101887848A (zh) | 2010-11-17 |
| US20100291761A1 (en) | 2010-11-18 |
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