SG159511A1 - Single conformal junction nanowire photovoltaic devices - Google Patents
Single conformal junction nanowire photovoltaic devicesInfo
- Publication number
- SG159511A1 SG159511A1 SG201000715-1A SG2010007151A SG159511A1 SG 159511 A1 SG159511 A1 SG 159511A1 SG 2010007151 A SG2010007151 A SG 2010007151A SG 159511 A1 SG159511 A1 SG 159511A1
- Authority
- SG
- Singapore
- Prior art keywords
- devices
- junction
- photovoltaic
- thin
- photovoltaic devices
- Prior art date
Links
- 239000002070 nanowire Substances 0.000 title 1
- 239000002086 nanomaterial Substances 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035245—Superlattices; Multiple quantum well structures characterised by amorphous semiconductor layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51008706A | 2006-08-25 | 2006-08-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG159511A1 true SG159511A1 (en) | 2010-03-30 |
Family
ID=38828518
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200706158-3A SG140564A1 (en) | 2006-08-25 | 2007-08-22 | Single conformal junction nanowire photovoltaic devices |
SG201000715-1A SG159511A1 (en) | 2006-08-25 | 2007-08-22 | Single conformal junction nanowire photovoltaic devices |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200706158-3A SG140564A1 (en) | 2006-08-25 | 2007-08-22 | Single conformal junction nanowire photovoltaic devices |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1892769A2 (fr) |
JP (1) | JP2008053730A (fr) |
CN (1) | CN101132028B (fr) |
SG (2) | SG140564A1 (fr) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2168167B1 (fr) * | 2007-06-19 | 2019-04-10 | QuNano AB | Structure de cellule solaire à nanofil |
KR100935322B1 (ko) * | 2008-01-02 | 2010-01-06 | 삼성전기주식회사 | 고효율 태양전지 및 이의 제조방법 |
US8592675B2 (en) | 2008-02-29 | 2013-11-26 | International Business Machines Corporation | Photovoltaic devices with enhanced efficiencies using high-aspect-ratio nanostructures |
US8551558B2 (en) | 2008-02-29 | 2013-10-08 | International Business Machines Corporation | Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures |
KR20100118605A (ko) * | 2008-02-29 | 2010-11-05 | 인터내셔널 비지네스 머신즈 코포레이션 | 하이-애스펙트-비 나노구조들을 갖는 광전 소자들 |
CN101562204B (zh) * | 2008-04-18 | 2011-03-23 | 鸿富锦精密工业(深圳)有限公司 | 太阳能电池 |
SE533090C2 (sv) * | 2008-07-09 | 2010-06-22 | Qunano Ab | Nanostrukturerad ljusdiod |
GB2462108A (en) * | 2008-07-24 | 2010-01-27 | Sharp Kk | Deposition of a thin film on a nanostructured surface |
US8269985B2 (en) * | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
WO2010027322A1 (fr) * | 2008-09-04 | 2010-03-11 | Qunano Ab | Photodiode nanostructurée |
CA2743743A1 (fr) * | 2008-11-14 | 2010-05-20 | Bandgap Engineering, Inc. | Dispositifs nanostructures |
KR101062906B1 (ko) * | 2009-02-17 | 2011-09-06 | 서울대학교산학협력단 | 탄소나노튜브 네트워크에 기반한 박막형 태양전지 |
US20100206367A1 (en) * | 2009-02-18 | 2010-08-19 | Korea Institute Of Industrial Technology | Method for fabricating silicon nano wire, solar cell including silicon nano wire and method for fabricating solar cell |
KR101086074B1 (ko) * | 2009-02-18 | 2011-11-23 | 한국생산기술연구원 | 실리콘 나노 와이어 제조 방법, 실리콘 나노 와이어를 포함하는 태양전지 및 태양전지의 제조 방법 |
WO2010141145A2 (fr) * | 2009-06-03 | 2010-12-09 | Massachusetts Institute Of Technology | Structure pseudo-périodique à utiliser dans des cellules solaires à couche mince |
JP5582744B2 (ja) * | 2009-08-20 | 2014-09-03 | 日立造船株式会社 | 太陽電池およびその製造方法並びに太陽電池装置 |
JP5393345B2 (ja) * | 2009-08-25 | 2014-01-22 | 日立造船株式会社 | 太陽電池および太陽電池装置 |
US20110048518A1 (en) * | 2009-08-26 | 2011-03-03 | Molecular Imprints, Inc. | Nanostructured thin film inorganic solar cells |
CN101712453B (zh) * | 2009-10-28 | 2013-02-13 | 合肥工业大学 | InSb超晶格纳米线的制备方法 |
US20110146744A1 (en) * | 2009-12-23 | 2011-06-23 | General Electric Company | Photovoltaic cell |
US20110146788A1 (en) * | 2009-12-23 | 2011-06-23 | General Electric Company | Photovoltaic cell |
US20110185728A1 (en) * | 2010-02-01 | 2011-08-04 | General Electric Company | High efficiency solar thermal receiver |
CN102244115A (zh) * | 2010-05-10 | 2011-11-16 | 济南光中新能源科技开发有限公司 | 无机薄膜吸收层太阳能电池 |
KR101652402B1 (ko) * | 2010-05-26 | 2016-08-30 | 삼성전자주식회사 | 나노와이어 구조의 태양전지 및 제조방법 |
US8859890B2 (en) | 2010-05-31 | 2014-10-14 | Industry-University Cooperation Foundation Hanyang University Erica Campus | Solar cell and method of manufacturing the same |
WO2011158722A1 (fr) * | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif de conversion photoélectrique et son procédé de fabrication |
CN101950793B (zh) * | 2010-08-10 | 2012-05-30 | 电子科技大学 | 一种光电二极管及其制备方法 |
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US8673750B2 (en) * | 2011-12-19 | 2014-03-18 | Palo Alto Research Center Incorporated | Single crystal silicon TFTs made by lateral crystallization from a nanowire seed |
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WO2014031911A1 (fr) * | 2012-08-22 | 2014-02-27 | Northwestern University | Anodes, cellules solaires et leurs procédés de fabrication |
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US9082911B2 (en) * | 2013-01-28 | 2015-07-14 | Q1 Nanosystems Corporation | Three-dimensional metamaterial device with photovoltaic bristles |
SE537287C2 (sv) * | 2013-06-05 | 2015-03-24 | Sol Voltaics Ab | En solcellsstruktur och en metod för tillverkning av densamma |
WO2015001626A1 (fr) * | 2013-07-03 | 2015-01-08 | 株式会社日立製作所 | Cellule solaire et procédé de fabrication de cette dernière |
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CN110965025B (zh) * | 2019-12-20 | 2021-07-23 | 平顶山学院 | 一种CdS/Si纳米薄膜异质结的制备方法 |
CN113555458A (zh) * | 2021-07-21 | 2021-10-26 | 成都中建材光电材料有限公司 | 薄膜太阳能电池及其制作方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2639841C3 (de) * | 1976-09-03 | 1980-10-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Solarzelle und Verfahren zu ihrer Herstellung |
JP2692964B2 (ja) * | 1989-07-14 | 1997-12-17 | 三洋電機株式会社 | 太陽電池 |
JPH03151672A (ja) * | 1989-11-08 | 1991-06-27 | Sharp Corp | 非晶質シリコン太陽電池 |
JP3876021B2 (ja) * | 1995-08-22 | 2007-01-31 | 松下電器産業株式会社 | シリコン構造体、その製造方法及びその製造装置、並びにシリコン構造体を用いた太陽電池 |
JP4514402B2 (ja) * | 2002-10-28 | 2010-07-28 | シャープ株式会社 | 半導体素子及びその製造方法 |
US6969897B2 (en) * | 2002-12-10 | 2005-11-29 | Kim Ii John | Optoelectronic devices employing fibers for light collection and emission |
JP3951019B2 (ja) * | 2002-12-20 | 2007-08-01 | 独立行政法人物質・材料研究機構 | 三酸化タングステンナノ構造物とその複合体ならびにそれらの製造方法 |
JP2005059135A (ja) * | 2003-08-11 | 2005-03-10 | Canon Inc | カーボンナノチューブを用いたデバイス及びその製造方法 |
US7662706B2 (en) * | 2003-11-26 | 2010-02-16 | Qunano Ab | Nanostructures formed of branched nanowhiskers and methods of producing the same |
EP1807913B1 (fr) * | 2004-10-27 | 2010-03-17 | Koninklijke Philips Electronics N.V. | Dispositif a semiconducteur comprenant une bande d'energie interdite accordable |
US7763794B2 (en) * | 2004-12-01 | 2010-07-27 | Palo Alto Research Center Incorporated | Heterojunction photovoltaic cell |
-
2007
- 2007-08-20 EP EP07114598A patent/EP1892769A2/fr not_active Withdrawn
- 2007-08-22 SG SG200706158-3A patent/SG140564A1/en unknown
- 2007-08-22 SG SG201000715-1A patent/SG159511A1/en unknown
- 2007-08-24 JP JP2007217729A patent/JP2008053730A/ja active Pending
- 2007-08-27 CN CN2007101424896A patent/CN101132028B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1892769A2 (fr) | 2008-02-27 |
JP2008053730A (ja) | 2008-03-06 |
CN101132028B (zh) | 2011-12-14 |
SG140564A1 (en) | 2008-03-28 |
CN101132028A (zh) | 2008-02-27 |
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