SG148971A1 - Substrates and methods of using those substrates - Google Patents

Substrates and methods of using those substrates

Info

Publication number
SG148971A1
SG148971A1 SG200804823-3A SG2008048233A SG148971A1 SG 148971 A1 SG148971 A1 SG 148971A1 SG 2008048233 A SG2008048233 A SG 2008048233A SG 148971 A1 SG148971 A1 SG 148971A1
Authority
SG
Singapore
Prior art keywords
substrates
contamination
methods
substrate
those
Prior art date
Application number
SG200804823-3A
Other languages
English (en)
Inventor
Jong Anthonius Martinus Cornelis Petrus De
Igor Petrus Maria Bouchoms
Richard Joseph Bruls
Hans Jansen
Martinus Hendrikus Antonius Leenders
Peter Franciscus Wanten
Der Heijden Marcus Theodoor Wilhelmus Van
Der Donck Jacques Cor Johan Van
Den Bogaard Frederik Johannes Van
Jan Groenewold
Der Graaf Sandra Van
Carmen Julia Zoldesi
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG148971A1 publication Critical patent/SG148971A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG200804823-3A 2007-07-09 2008-06-25 Substrates and methods of using those substrates SG148971A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/822,695 US20090014030A1 (en) 2007-07-09 2007-07-09 Substrates and methods of using those substrates

Publications (1)

Publication Number Publication Date
SG148971A1 true SG148971A1 (en) 2009-01-29

Family

ID=39789314

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200804823-3A SG148971A1 (en) 2007-07-09 2008-06-25 Substrates and methods of using those substrates

Country Status (7)

Country Link
US (1) US20090014030A1 (ko)
EP (1) EP2015140A1 (ko)
JP (2) JP5064317B2 (ko)
KR (2) KR101155069B1 (ko)
CN (2) CN102305990B (ko)
SG (1) SG148971A1 (ko)
TW (1) TWI400577B (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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US7723463B2 (en) * 2006-04-12 2010-05-25 Battelle Energy Alliance, Llc Polyphosphazine-based polymer materials
NL1036069A1 (nl) * 2007-10-30 2009-05-07 Asml Netherlands Bv An Immersion Lithography Apparatus.
JP2010103363A (ja) * 2008-10-24 2010-05-06 Nec Electronics Corp 液浸露光装置の洗浄方法、ダミーウェハ、及び液浸露光装置
NL2003758A (en) * 2008-12-04 2010-06-07 Asml Netherlands Bv A member with a cleaning surface and a method of removing contamination.
US20110199591A1 (en) * 2009-10-14 2011-08-18 Nikon Corporation Exposure apparatus, exposing method, maintenance method and device fabricating method
NL2009284A (en) * 2011-09-22 2013-10-31 Asml Netherlands Bv A cleaning substrate for a lithography apparatus, a cleaning method for a lithography apparatus and a lithography apparatus.
JP6282260B2 (ja) * 2012-04-02 2018-02-21 エーエスエムエル ネザーランズ ビー．ブイ． 微粒子汚染測定方法及び装置
US9846365B2 (en) 2013-08-02 2017-12-19 Asml Netherlands B.V. Component for a radiation source, associated radiation source and lithographic apparatus
NL2020847A (en) 2017-05-25 2018-12-04 Asml Holding Nv Substrates and methods of using those substrates
WO2019158380A1 (en) 2018-02-13 2019-08-22 Asml Netherlands B.V. Apparatus for and method of in-situ particle removal in a lithography apparatus
US11431494B2 (en) 2018-03-15 2022-08-30 Atakama LLC Passwordless security system for data-at-rest
US11953838B2 (en) 2018-11-09 2024-04-09 Asml Holding N.V. Lithography support cleaning with cleaning substrate having controlled geometry and composition
US11256181B2 (en) * 2019-07-31 2022-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for removing particles in semiconductor manufacturing

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JPH06224105A (ja) * 1993-01-22 1994-08-12 Kawasaki Steel Corp 露光装置のステージのゴミ粒子除去方法
JP2518528B2 (ja) * 1993-07-27 1996-07-24 日本電気株式会社 集塵器
JP3450584B2 (ja) * 1996-04-09 2003-09-29 キヤノン株式会社 半導体露光装置
JPH11162831A (ja) * 1997-11-21 1999-06-18 Nikon Corp 投影露光装置及び投影露光方法
AU1175799A (en) * 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
JPH11345846A (ja) * 1999-02-19 1999-12-14 Japan Electronic Materials Corp プロ―ブ先端クリ―ニングシ―ト
DE19963124A1 (de) * 1999-12-24 2001-07-12 Roland Man Druckmasch Reinigungsmedium und dessen Verwendung
KR100756211B1 (ko) * 2000-05-04 2007-09-06 비티지 인터내셔널 리미티드 나노구조물
US6787339B1 (en) * 2000-10-02 2004-09-07 Motorola, Inc. Microfluidic devices having embedded metal conductors and methods of fabricating said devices
JP3981246B2 (ja) * 2001-05-02 2007-09-26 日東電工株式会社 クリーニングシ―ト、クリーニング機能付き搬送部材、及びこれらを用いた基板処理装置のクリーニング方法
JP2004063669A (ja) * 2002-07-26 2004-02-26 Oki Electric Ind Co Ltd 半導体製造装置クリーニングウエハとその製造方法、およびそれを用いたクリーニング方法
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
JP4052966B2 (ja) * 2003-03-24 2008-02-27 Ｎｅｃエレクトロニクス株式会社 ウェハ検査装置およびその検査方法
ATE449982T1 (de) * 2003-04-11 2009-12-15 Nikon Corp Reinigungsverfahren für optik in immersionslithographie
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US20070004182A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and system for inhibiting immersion lithography defect formation
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods

Also Published As

Publication number Publication date
JP2009016838A (ja) 2009-01-22
TWI400577B (zh) 2013-07-01
CN101446770A (zh) 2009-06-03
CN101446770B (zh) 2011-09-28
JP5285107B2 (ja) 2013-09-11
CN102305990B (zh) 2014-05-07
KR101363424B1 (ko) 2014-02-14
KR101155069B1 (ko) 2012-06-15
KR20100098478A (ko) 2010-09-07
JP2011159986A (ja) 2011-08-18
TW200925787A (en) 2009-06-16
EP2015140A1 (en) 2009-01-14
US20090014030A1 (en) 2009-01-15
JP5064317B2 (ja) 2012-10-31
CN102305990A (zh) 2012-01-04
KR20090005993A (ko) 2009-01-14

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