SG146578A1 - Halogen-free amorphous carbon mask etch having high selectivity to photoresist - Google Patents

Halogen-free amorphous carbon mask etch having high selectivity to photoresist

Info

Publication number
SG146578A1
SG146578A1 SG200802285-7A SG2008022857A SG146578A1 SG 146578 A1 SG146578 A1 SG 146578A1 SG 2008022857 A SG2008022857 A SG 2008022857A SG 146578 A1 SG146578 A1 SG 146578A1
Authority
SG
Singapore
Prior art keywords
amorphous carbon
halogen
etch
free
high selectivity
Prior art date
Application number
SG200802285-7A
Other languages
English (en)
Inventor
Jong Mun Kim
Judy Wang
Ajey M Joshi
Jingbao Liu
Bryan Y Pu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG146578A1 publication Critical patent/SG146578A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
SG200802285-7A 2007-03-21 2008-03-24 Halogen-free amorphous carbon mask etch having high selectivity to photoresist SG146578A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/689,389 US7807064B2 (en) 2007-03-21 2007-03-21 Halogen-free amorphous carbon mask etch having high selectivity to photoresist

Publications (1)

Publication Number Publication Date
SG146578A1 true SG146578A1 (en) 2008-10-30

Family

ID=39462093

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200802285-7A SG146578A1 (en) 2007-03-21 2008-03-24 Halogen-free amorphous carbon mask etch having high selectivity to photoresist

Country Status (7)

Country Link
US (1) US7807064B2 (zh)
EP (1) EP1973148A3 (zh)
JP (1) JP2008263186A (zh)
KR (1) KR20080086385A (zh)
CN (1) CN101320224A (zh)
SG (1) SG146578A1 (zh)
TW (1) TW200905726A (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007100849A2 (en) 2006-02-27 2007-09-07 Microcontinuum, Inc. Formation of pattern replicating tools
KR100976647B1 (ko) * 2007-04-25 2010-08-18 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US20090004875A1 (en) * 2007-06-27 2009-01-01 Meihua Shen Methods of trimming amorphous carbon film for forming ultra thin structures on a substrate
KR100919350B1 (ko) * 2008-04-24 2009-09-25 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
EP2144117A1 (en) * 2008-07-11 2010-01-13 The Provost, Fellows and Scholars of the College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin Process and system for fabrication of patterns on a surface
JP2010283095A (ja) * 2009-06-04 2010-12-16 Hitachi Ltd 半導体装置の製造方法
US8252699B2 (en) * 2010-11-22 2012-08-28 Applied Materials, Inc. Composite removable hardmask
EP2525416A2 (en) * 2011-05-17 2012-11-21 Intevac, Inc. Method for rear point contact fabrication for solar cells
CN102354669B (zh) * 2011-10-25 2013-02-27 上海华力微电子有限公司 硅纳米线器件的制作方法
CN103137443B (zh) * 2011-11-25 2015-11-25 中芯国际集成电路制造(上海)有限公司 无定形碳硬掩膜层的形成方法及刻蚀方法
US9589797B2 (en) * 2013-05-17 2017-03-07 Microcontinuum, Inc. Tools and methods for producing nanoantenna electronic devices
SG11201600440VA (en) * 2013-11-06 2016-02-26 Mattson Tech Inc Novel mask removal process strategy for vertical nand device
CN105355538A (zh) * 2014-08-21 2016-02-24 北京北方微电子基地设备工艺研究中心有限责任公司 一种刻蚀方法
US9455135B2 (en) 2014-12-07 2016-09-27 United Microelectronics Corp. Method for fabricating semiconductor device
US10049875B2 (en) 2016-03-04 2018-08-14 Tokyo Electron Limited Trim method for patterning during various stages of an integration scheme
US9852924B1 (en) * 2016-08-24 2017-12-26 Lam Research Corporation Line edge roughness improvement with sidewall sputtering
CN110088882B (zh) 2016-12-14 2023-05-26 玛特森技术公司 与快速热活化工艺相结合的使用等离子体的原子层刻蚀工艺
CN107968094A (zh) * 2017-11-21 2018-04-27 长江存储科技有限责任公司 一种用于3d nand闪存的台阶结构成形工艺
US10811270B2 (en) * 2019-03-15 2020-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra narrow trench patterning using plasma etching

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6387819B1 (en) * 1998-04-29 2002-05-14 Applied Materials, Inc. Method for etching low K dielectric layers
US6194128B1 (en) * 1998-09-17 2001-02-27 Taiwan Semiconductor Manufacturing Company Method of dual damascene etching
US6326307B1 (en) 1999-11-15 2001-12-04 Appllied Materials, Inc. Plasma pretreatment of photoresist in an oxide etch process
US6541361B2 (en) 2001-06-27 2003-04-01 Lam Research Corp. Plasma enhanced method for increasing silicon-containing photoresist selectivity
US6767824B2 (en) * 2002-09-23 2004-07-27 Padmapani C. Nallan Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask
US6900123B2 (en) 2003-03-20 2005-05-31 Texas Instruments Incorporated BARC etch comprising a selective etch chemistry and a high polymerizing gas for CD control
US7129180B2 (en) * 2003-09-12 2006-10-31 Micron Technology, Inc. Masking structure having multiple layers including an amorphous carbon layer
US6911399B2 (en) 2003-09-19 2005-06-28 Applied Materials, Inc. Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
US7572386B2 (en) * 2006-08-07 2009-08-11 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process

Also Published As

Publication number Publication date
JP2008263186A (ja) 2008-10-30
EP1973148A3 (en) 2009-10-14
US20080230511A1 (en) 2008-09-25
KR20080086385A (ko) 2008-09-25
TW200905726A (en) 2009-02-01
CN101320224A (zh) 2008-12-10
US7807064B2 (en) 2010-10-05
EP1973148A2 (en) 2008-09-24

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