SG145663A1 - Method and apparatus for controlling gas flow to a processing chamber - Google Patents

Method and apparatus for controlling gas flow to a processing chamber

Info

Publication number
SG145663A1
SG145663A1 SG200801427-6A SG2008014276A SG145663A1 SG 145663 A1 SG145663 A1 SG 145663A1 SG 2008014276 A SG2008014276 A SG 2008014276A SG 145663 A1 SG145663 A1 SG 145663A1
Authority
SG
Singapore
Prior art keywords
processing chamber
gases
gas flow
inlet
gas
Prior art date
Application number
SG200801427-6A
Other languages
English (en)
Inventor
Ezra Robert Gold
Richard Charles Fovell
James Patrick Cruse
Jared Ahmad Lee
Bruno Geoffrion
Arthur Buchberger Douglas Jr
Martin Jeffrey Salinas
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG145663A1 publication Critical patent/SG145663A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/7722—Line condition change responsive valves
    • Y10T137/7758—Pilot or servo controlled
    • Y10T137/7761—Electrically actuated valve
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87249—Multiple inlet with multiple outlet

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
SG200801427-6A 2007-02-26 2008-02-20 Method and apparatus for controlling gas flow to a processing chamber SG145663A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/678,622 US7775236B2 (en) 2007-02-26 2007-02-26 Method and apparatus for controlling gas flow to a processing chamber

Publications (1)

Publication Number Publication Date
SG145663A1 true SG145663A1 (en) 2008-09-29

Family

ID=39581834

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200801427-6A SG145663A1 (en) 2007-02-26 2008-02-20 Method and apparatus for controlling gas flow to a processing chamber

Country Status (7)

Country Link
US (1) US7775236B2 (ja)
EP (1) EP1961837A1 (ja)
JP (1) JP2008211218A (ja)
KR (1) KR100975442B1 (ja)
CN (1) CN101256937B (ja)
SG (1) SG145663A1 (ja)
TW (1) TW200845110A (ja)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
US7743670B2 (en) * 2006-08-14 2010-06-29 Applied Materials, Inc. Method and apparatus for gas flow measurement
US8074677B2 (en) * 2007-02-26 2011-12-13 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
JP5372353B2 (ja) * 2007-09-25 2013-12-18 株式会社フジキン 半導体製造装置用ガス供給装置
US8143074B2 (en) * 2007-11-16 2012-03-27 Freescale Semiconductor, Inc. Semiconductor processing system and method of processing a semiconductor wafer
KR20100124264A (ko) 2008-03-12 2010-11-26 파나소닉 주식회사 섬유 제조 방법, 섬유 제조 장치 및 프로톤-교환막 연료 전지
US20090236447A1 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus for controlling gas injection in process chamber
KR101038399B1 (ko) * 2008-09-17 2011-06-01 한국수력원자력 주식회사 Ｏｎ-ｌｉｎｅ 전열관 파손감지 기능을 갖는 소듐 냉각 고속로용 증기발생기
JP5216632B2 (ja) * 2009-03-03 2013-06-19 東京エレクトロン株式会社 流体制御装置
US8291935B1 (en) * 2009-04-07 2012-10-23 Novellus Systems, Inc. Flexible gas mixing manifold
US20100327196A1 (en) * 2009-06-30 2010-12-30 Tejas Research And Engineering, Lp Purging Mechanism for a Hemi-Wedge Valve
WO2011021539A1 (ja) * 2009-08-20 2011-02-24 東京エレクトロン株式会社 プラズマ処理装置とプラズマ処理方法
US20110097492A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold operating state management system
CN101989068B (zh) * 2010-11-05 2012-07-18 北京七星华创电子股份有限公司 基于质量流量控制器的模拟工艺系统和方法
US20130251913A1 (en) * 2010-11-30 2013-09-26 Advanced Technology Materials, Inc. Ion implanter system including remote dopant source, and method comprising same
JP5855921B2 (ja) * 2010-12-17 2016-02-09 株式会社堀場エステック ガス濃度調整装置
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
US20140137961A1 (en) * 2012-11-19 2014-05-22 Applied Materials, Inc. Modular chemical delivery system
CN104167345B (zh) * 2013-05-17 2016-08-24 中微半导体设备(上海)有限公司 等离子处理装置及其气体输送装置、气体切换方法
DE102013012868A1 (de) * 2013-07-29 2015-01-29 Walter Kramer Kupplungspunkt sowie Kupplungsstation für eine pneumatische Förderanlage zur Förderung von Schüttgut
JP6504770B2 (ja) * 2014-06-30 2019-04-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TWI670394B (zh) 2014-09-10 2019-09-01 美商應用材料股份有限公司 空間原子層沈積中的氣體分離控制
JP6789932B2 (ja) 2014-10-17 2020-11-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 調整可能ガスフロー制御のためのガス分離器を含むガス供給配送配置
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP2016134569A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体製造装置
TW201634738A (zh) * 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) * 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10684159B2 (en) * 2016-06-27 2020-06-16 Applied Materials, Inc. Methods, systems, and apparatus for mass flow verification based on choked flow
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
CN111433902A (zh) 2017-12-08 2020-07-17 朗姆研究公司 向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有改进的孔图案的集成喷头
US12084766B2 (en) * 2018-07-10 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
DE102019001471A1 (de) * 2019-02-27 2020-08-27 Walter Kramer Saugfördersystem für Schüttgut, insbesondere Kunststoffgranulat
US11788190B2 (en) 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
CN112563105B (zh) * 2019-09-10 2023-11-03 中微半导体设备(上海)股份有限公司 等离子体处理装置中实现气体流量验证的系统及方法
US11946136B2 (en) 2019-09-20 2024-04-02 Asm Ip Holding B.V. Semiconductor processing device
CN110777428B (zh) * 2019-09-23 2022-03-22 北京北方华创微电子装备有限公司 一种气体输运系统
US11555730B2 (en) 2020-10-09 2023-01-17 Applied Materials, Inc. In-situ method and apparatus for measuring fluid resistivity

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US20020083984A1 (en) * 2000-12-28 2002-07-04 International Business Machines Corporation System for and method of monitoring the flow of semiconductor process gases from a gas delivery system
US6733590B1 (en) * 1999-05-03 2004-05-11 Seagate Technology Llc. Method and apparatus for multilayer deposition utilizing a common beam source
US20040112538A1 (en) * 2002-12-13 2004-06-17 Lam Research Corporation Gas distribution system with tuning gas
US6773749B1 (en) * 1999-09-20 2004-08-10 Moore Epitaxial Inc. Method of controlling gas flow to a semiconductor processing reactor
US20060124169A1 (en) * 2004-12-09 2006-06-15 Tokyo Electron Limited Gas supply unit, substrate processing apparatus, and supply gas setting method

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5292788A (en) * 1976-01-30 1977-08-04 Standard Technology Gas diluting apparatus
US4590790A (en) * 1985-05-16 1986-05-27 American Meter Company Method for determining the accuracy of a gas measurement instrument
US4687020A (en) 1985-05-17 1987-08-18 Doyle James H Fluid mass flow controller
US4761269A (en) 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4911101A (en) 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
JP2888253B2 (ja) * 1989-07-20 1999-05-10 富士通株式会社 化学気相成長法およびその実施のための装置
JPH03156509A (ja) 1989-11-14 1991-07-04 Stec Kk マスフローコントローラ
US5062446A (en) 1991-01-07 1991-11-05 Sematech, Inc. Intelligent mass flow controller
US5141021A (en) 1991-09-06 1992-08-25 Stec Inc. Mass flow meter and mass flow controller
US5254210A (en) 1992-04-27 1993-10-19 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for growing semiconductor heterostructures
US5303731A (en) 1992-06-30 1994-04-19 Unit Instruments, Inc. Liquid flow controller
US5190068A (en) 1992-07-02 1993-03-02 Brian Philbin Control apparatus and method for controlling fluid flows and pressures
JPH06295862A (ja) 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
US5293778A (en) 1993-05-27 1994-03-15 General Electric Company Fluid flow measuring system
WO1995019549A1 (en) 1994-01-14 1995-07-20 Unit Instruments, Inc. Flow meter
US5524084A (en) 1994-12-30 1996-06-04 Hewlett-Packard Company Method and apparatus for improved flow and pressure measurement and control
US5653807A (en) 1996-03-28 1997-08-05 The United States Of America As Represented By The Secretary Of The Air Force Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy
US5662143A (en) 1996-05-16 1997-09-02 Gasonics International Modular gas box system
US5944048A (en) 1996-10-04 1999-08-31 Emerson Electric Co. Method and apparatus for detecting and controlling mass flow
US5911238A (en) 1996-10-04 1999-06-15 Emerson Electric Co. Thermal mass flowmeter and mass flow controller, flowmetering system and method
JPH10240356A (ja) 1997-02-21 1998-09-11 Anelva Corp 基板処理装置の基板温度制御法と基板温度制御性判定法
KR100251645B1 (ko) 1997-03-21 2000-04-15 윤종용 반도체 공정용 가스 평가장치에 결합되는 샘플가스 분배 장치 및 구동방법
US5966499A (en) 1997-07-28 1999-10-12 Mks Instruments, Inc. System for delivering a substantially constant vapor flow to a chemical process reactor
TW437017B (en) * 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6269692B1 (en) 1999-02-01 2001-08-07 Dxl Usa Inc. Mass flow measuring assembly having low pressure drop and fast response time
KR100427563B1 (ko) 1999-04-16 2004-04-27 가부시키가이샤 후지킨 병렬분류형 유체공급장치와, 이것에 사용하는 유체가변형압력식 유량제어방법 및 유체가변형 압력식 유량제어장치
US6210482B1 (en) 1999-04-22 2001-04-03 Fujikin Incorporated Apparatus for feeding gases for use in semiconductor manufacturing
US6560606B1 (en) * 1999-05-04 2003-05-06 Metratech Method and apparatus for processing data with multiple processing modules and associated counters
US6119710A (en) 1999-05-26 2000-09-19 Cyber Instrument Technologies Llc Method for wide range gas flow system with real time flow measurement and correction
US6343617B1 (en) 1999-07-09 2002-02-05 Millipore Corporation System and method of operation of a digital mass flow controller
US6389364B1 (en) 1999-07-10 2002-05-14 Mykrolis Corporation System and method for a digital mass flow controller
US6138708A (en) 1999-07-28 2000-10-31 Controls Corporation Of America Mass flow controller having automatic pressure compensator
US6772781B2 (en) * 2000-02-04 2004-08-10 Air Liquide America, L.P. Apparatus and method for mixing gases
KR100332313B1 (ko) * 2000-06-24 2002-04-12 서성기 Ａｌｄ 박막증착장치 및 증착방법
AU2001288225A1 (en) 2000-07-24 2002-02-05 The University Of Maryland College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
AU2001286619A1 (en) 2000-08-22 2002-03-04 Fugasity Corporation Fluid mass flow meter with substantial measurement range
US6814096B2 (en) 2000-12-15 2004-11-09 Nor-Cal Products, Inc. Pressure controller and method
US6800173B2 (en) 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US7778920B2 (en) * 2001-03-20 2010-08-17 American Express Travel Related Services Company, Inc. Method and apparatus for providing pre-existing and prospective customers with an immediately accessible account
ATE310986T1 (de) 2001-04-24 2005-12-15 Celerity Group Inc Verfahren zur bestimmung einer ventilöffnung für einen massenflussregler
WO2003089682A1 (en) 2002-04-19 2003-10-30 Mattson Technology, Inc. System for depositing a film onto a substrate using a low vapor pressure gas precursor
US20040040664A1 (en) * 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
US7552015B2 (en) 2002-06-24 2009-06-23 Mks Instruments, Inc. Apparatus and method for displaying mass flow controller pressure
US7004191B2 (en) 2002-06-24 2006-02-28 Mks Instruments, Inc. Apparatus and method for mass flow controller with embedded web server
US7136767B2 (en) 2002-06-24 2006-11-14 Mks Instruments, Inc. Apparatus and method for calibration of mass flow controller
US6712084B2 (en) 2002-06-24 2004-03-30 Mks Instruments, Inc. Apparatus and method for pressure fluctuation insensitive mass flow control
US6810308B2 (en) 2002-06-24 2004-10-26 Mks Instruments, Inc. Apparatus and method for mass flow controller with network access to diagnostics
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
KR20050031109A (ko) 2002-07-19 2005-04-01 셀레리티 그룹 아이엔씨 질량 유량 제어기 내의 압력 보상을 위한 방법 및 장치
EP1552200A4 (en) 2002-08-28 2010-05-19 Horiba Stec Inc FLOW REGULATOR BASED ON PRESSURE AND WITH IMPROVED PRECISION
US20040050326A1 (en) 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
US6898558B2 (en) 2002-12-31 2005-05-24 Tokyo Electron Limited Method and apparatus for monitoring a material processing system
US20040163590A1 (en) 2003-02-24 2004-08-26 Applied Materials, Inc. In-situ health check of liquid injection vaporizer
TW200507141A (en) * 2003-05-12 2005-02-16 Agere Systems Inc Method of mass flow control flow verification and calibration
US20050120805A1 (en) 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
US7072743B2 (en) 2004-03-09 2006-07-04 Mks Instruments, Inc. Semiconductor manufacturing gas flow divider system and method
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
JP4421393B2 (ja) * 2004-06-22 2010-02-24 東京エレクトロン株式会社 基板処理装置
US20060068098A1 (en) 2004-09-27 2006-03-30 Tokyo Electron Limited Deposition of ruthenium metal layers in a thermal chemical vapor deposition process
US20070021935A1 (en) 2005-07-12 2007-01-25 Larson Dean J Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6733590B1 (en) * 1999-05-03 2004-05-11 Seagate Technology Llc. Method and apparatus for multilayer deposition utilizing a common beam source
US6773749B1 (en) * 1999-09-20 2004-08-10 Moore Epitaxial Inc. Method of controlling gas flow to a semiconductor processing reactor
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US20020083984A1 (en) * 2000-12-28 2002-07-04 International Business Machines Corporation System for and method of monitoring the flow of semiconductor process gases from a gas delivery system
US20040112538A1 (en) * 2002-12-13 2004-06-17 Lam Research Corporation Gas distribution system with tuning gas
US20060124169A1 (en) * 2004-12-09 2006-06-15 Tokyo Electron Limited Gas supply unit, substrate processing apparatus, and supply gas setting method

Also Published As

Publication number Publication date
KR20080079211A (ko) 2008-08-29
EP1961837A1 (en) 2008-08-27
CN101256937B (zh) 2012-08-22
US20080202610A1 (en) 2008-08-28
US7775236B2 (en) 2010-08-17
KR100975442B1 (ko) 2010-08-11
JP2008211218A (ja) 2008-09-11
CN101256937A (zh) 2008-09-03
TW200845110A (en) 2008-11-16

Similar Documents

Publication Publication Date Title
SG145668A1 (en) Method and apparatus for controlling gas flow to a processing chamber
SG145663A1 (en) Method and apparatus for controlling gas flow to a processing chamber
SG145669A1 (en) Method and apparatus for controlling gas flow to a processing chamber
WO2011137071A3 (en) Methods and apparatus for calibrating flow controllers in substrate processing systems
JP2008211218A5 (ja)
EP2845921A3 (en) Method of and apparatus for multiple channel flow ratio controller system
TW200636856A (en) Semiconductor processing apparatus and method
TW200940867A (en) Gas transport delay resolution for short etch recipes
CN104460706B (zh) 群集的质量流装置和包含该装置的多管线质量流装置
MX2014002128A (es) Sistema de control de flujo de fluido para el interior de pozos que tiene un modulo fluidico con una red en puente y metodo de uso del mismo.
JP2015519724A5 (ja)
GB0303748D0 (en) Apparatus and process for the purification of air
JP2008211219A5 (ja)
WO2013016191A3 (en) Methods and apparatus for the deposition of materials on a substrate
EP2455580A3 (en) Control apparatus for downhole valves
TW200737314A (en) Gas supply system, substrate processing apparatus and gas supply method
TW200633049A (en) Gas supply unit, substrate processing apparatus, and supply gas setting method
TW201433733A (zh) 集成型氣體供應裝置
WO2008051809A3 (en) Thermal load locator
TW200707149A (en) Apparatus and method for controlling temperature in a chuck system
NZ590481A (en) Apparatus, system and method for controlling temperature in a building comprising a plurality of mutually isolated heat exchange paths and bypass paths for accomodating air flow
CN103063259A (zh) 管道压力检测及控制系统
KR20190074930A (ko) 질량유량제어기
ATE553323T1 (de) Gaszufuhrvorrichtung
WO2008074386A3 (en) Apparatus and method for th removal of gasses