SG141301A1 - Integrated passive devices with high q inductors - Google Patents

Integrated passive devices with high q inductors

Info

Publication number
SG141301A1
SG141301A1 SG200704865-5A SG2007048655A SG141301A1 SG 141301 A1 SG141301 A1 SG 141301A1 SG 2007048655 A SG2007048655 A SG 2007048655A SG 141301 A1 SG141301 A1 SG 141301A1
Authority
SG
Singapore
Prior art keywords
substrate
inductor
inductors
passive devices
constructed
Prior art date
Application number
SG200704865-5A
Other languages
English (en)
Inventor
Yinon Degani
Yinchao Chen
Yu Fan
Charley Chunlei Gao
Kunquan Sun
Liguo Sun
Original Assignee
Sychip Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sychip Inc filed Critical Sychip Inc
Publication of SG141301A1 publication Critical patent/SG141301A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H01F2017/002—Details of via holes for interconnecting the layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0086—Printed inductances on semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
SG200704865-5A 2006-09-13 2007-06-28 Integrated passive devices with high q inductors SG141301A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/520,254 US7355264B2 (en) 2006-09-13 2006-09-13 Integrated passive devices with high Q inductors

Publications (1)

Publication Number Publication Date
SG141301A1 true SG141301A1 (en) 2008-04-28

Family

ID=38920717

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200704865-5A SG141301A1 (en) 2006-09-13 2007-06-28 Integrated passive devices with high q inductors

Country Status (6)

Country Link
US (1) US7355264B2 (ja)
EP (1) EP1901353A3 (ja)
JP (1) JP2008072121A (ja)
CN (1) CN101202151B (ja)
SG (1) SG141301A1 (ja)
TW (1) TW200816381A (ja)

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US20090085704A1 (en) * 2007-10-01 2009-04-02 Infineon Technologies Austria Ag Chip inductor
US8269308B2 (en) * 2008-03-19 2012-09-18 Stats Chippac, Ltd. Semiconductor device with cross-talk isolation using M-cap and method thereof
US8237269B2 (en) * 2008-08-01 2012-08-07 Qualcomm Incorporated High Q transformer disposed at least partly in a non-semiconductor substrate
JPWO2010052839A1 (ja) * 2008-11-06 2012-03-29 パナソニック株式会社 半導体装置
US7935570B2 (en) * 2008-12-10 2011-05-03 Stats Chippac, Ltd. Semiconductor device and method of embedding integrated passive devices into the package electrically interconnected using conductive pillars
US8018027B2 (en) * 2009-10-30 2011-09-13 Murata Manufacturing Co., Ltd. Flip-bonded dual-substrate inductor, flip-bonded dual-substrate inductor, and integrated passive device including a flip-bonded dual-substrate inductor
US9330826B1 (en) 2010-02-12 2016-05-03 The Board Of Trustees Of The University Of Alabama For And On Behalf Of The University Of Alabama Integrated architecture for power converters
US9263950B2 (en) 2010-04-30 2016-02-16 The Board Of Trustees Of The University Of Alabama Coupled inductors for improved power converter
US9059026B2 (en) 2010-06-01 2015-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. 3-D inductor and transformer
US8471358B2 (en) * 2010-06-01 2013-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. 3D inductor and transformer
US8797057B2 (en) * 2011-02-11 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Testing of semiconductor chips with microbumps
US9006862B2 (en) 2011-09-09 2015-04-14 Stmicroelectronics S.R.L. Electronic semiconductor device with integrated inductor, and manufacturing method
US8539666B2 (en) 2011-11-10 2013-09-24 Harris Corporation Method for making an electrical inductor and related inductor devices
CN103107165B (zh) * 2012-11-29 2017-11-14 天津大学 带有密封环的半导体封装结构以及微机电系统器件
TWI479640B (zh) 2012-12-25 2015-04-01 Ind Tech Res Inst 晶片堆疊結構
US8941212B2 (en) * 2013-02-06 2015-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Helical spiral inductor between stacking die
US9373583B2 (en) 2013-03-01 2016-06-21 Qualcomm Incorporated High quality factor filter implemented in wafer level packaging (WLP) integrated device
US9035421B2 (en) * 2013-03-01 2015-05-19 Qualcomm Incorporated High quality factor inductor implemented in wafer level packaging (WLP)
US10269591B2 (en) 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
US9355956B2 (en) * 2013-11-01 2016-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Inductor for semiconductor integrated circuit
EP3164888A1 (en) * 2014-07-03 2017-05-10 Qualcomm Incorporated High quality factor filter implemented in wafer level packaging (wlp) integrated device
TWI572007B (zh) 2014-10-06 2017-02-21 瑞昱半導體股份有限公司 積體電感結構
CN105575958B (zh) * 2014-10-09 2019-03-15 瑞昱半导体股份有限公司 集成电感结构
US9997495B2 (en) * 2014-12-19 2018-06-12 Elwha Llc Non-contacting inductive interconnects
FR3045940B1 (fr) * 2015-12-16 2018-02-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d'inductance et son procede de fabrication
JP2019525683A (ja) * 2016-06-06 2019-09-05 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． 誘導結合フィルタ及びワイヤレス・フィデリティＷｉＦｉモジュール
US10504784B2 (en) 2017-10-25 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Inductor structure for integrated circuit
US10475877B1 (en) 2018-08-21 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-terminal inductor for integrated circuit
US11139239B2 (en) 2019-10-01 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Recessed inductor structure to reduce step height

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JP2914345B2 (ja) * 1997-04-11 1999-06-28 日本電気株式会社 フリップチップ型半導体装置
US5880662A (en) * 1997-08-21 1999-03-09 Dale Electronics, Inc. High self resonant frequency multilayer inductor and method for making same
JP2000182851A (ja) * 1998-12-15 2000-06-30 Matsushita Electric Ind Co Ltd インダクタ
US6190940B1 (en) * 1999-01-21 2001-02-20 Lucent Technologies Inc. Flip chip assembly of semiconductor IC chips
JP2000323336A (ja) * 1999-03-11 2000-11-24 Taiyo Yuden Co Ltd インダクタ及びその製造方法
US20020096421A1 (en) * 2000-11-29 2002-07-25 Cohn Michael B. MEMS device with integral packaging
US6847282B2 (en) * 2001-10-19 2005-01-25 Broadcom Corporation Multiple layer inductor and method of making the same
JP2003142323A (ja) * 2001-11-01 2003-05-16 Sanken Electric Co Ltd シートコイル及びシートトランス
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US7126228B2 (en) * 2003-04-23 2006-10-24 Micron Technology, Inc. Apparatus for processing semiconductor devices in a singulated form
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US7088005B2 (en) * 2003-12-31 2006-08-08 Intel Corporation Wafer stacking with anisotropic conductive adhesive
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US7382056B2 (en) * 2004-04-29 2008-06-03 Sychip Inc. Integrated passive devices
US7239020B2 (en) * 2004-05-06 2007-07-03 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Multi-mode integrated circuit structure
US7183622B2 (en) * 2004-06-30 2007-02-27 Intel Corporation Module integrating MEMS and passive components
US7564066B2 (en) * 2005-11-09 2009-07-21 Intel Corporation Multi-chip assembly with optically coupled die

Also Published As

Publication number Publication date
CN101202151A (zh) 2008-06-18
JP2008072121A (ja) 2008-03-27
US7355264B2 (en) 2008-04-08
US20080061420A1 (en) 2008-03-13
CN101202151B (zh) 2012-05-02
EP1901353A2 (en) 2008-03-19
EP1901353A3 (en) 2011-06-29
TW200816381A (en) 2008-04-01

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