TW200746393A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
TW200746393A
TW200746393A TW096113737A TW96113737A TW200746393A TW 200746393 A TW200746393 A TW 200746393A TW 096113737 A TW096113737 A TW 096113737A TW 96113737 A TW96113737 A TW 96113737A TW 200746393 A TW200746393 A TW 200746393A
Authority
TW
Taiwan
Prior art keywords
circuits
integrated circuit
semiconductor integrated
devices
digital circuits
Prior art date
Application number
TW096113737A
Other languages
Chinese (zh)
Other versions
TWI345301B (en
Inventor
Yi-Sun Chung
Original Assignee
Magnachip Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Magnachip Semiconductor Ltd filed Critical Magnachip Semiconductor Ltd
Publication of TW200746393A publication Critical patent/TW200746393A/en
Application granted granted Critical
Publication of TWI345301B publication Critical patent/TWI345301B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823493—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A semiconductor integrated circuit including digital circuits and analog circuits integrated over a single substrate includes the substrate including portions where the digital circuits and the analog circuits are to be formed, and a plurality of deep-wells formed to a certain thickness inside the substrate to surround portions where devices of the digital circuits and devices of the analog circuits are to be formed to reduce interference between the devices of the analog circuits and the digital circuits.
TW096113737A 2006-04-26 2007-04-19 Semiconductor integrated circuit TWI345301B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060037865 2006-04-26
KR1020070026209A KR100854440B1 (en) 2006-04-26 2007-03-16 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
TW200746393A true TW200746393A (en) 2007-12-16
TWI345301B TWI345301B (en) 2011-07-11

Family

ID=38819237

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096113737A TWI345301B (en) 2006-04-26 2007-04-19 Semiconductor integrated circuit

Country Status (3)

Country Link
KR (1) KR100854440B1 (en)
CN (1) CN100536138C (en)
TW (1) TWI345301B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101916730B (en) * 2010-07-22 2012-07-11 中国科学院上海微系统与信息技术研究所 Method for manufacturing silicon on insulator (SOI) super-junction laterally diffused metal oxide semiconductor (LDMOS) with linear buffer layer
US9202760B2 (en) * 2012-06-26 2015-12-01 Infineon Technologies Ag Semiconductor devices and structures
CN104241279B (en) * 2013-06-18 2017-09-01 中芯国际集成电路制造(上海)有限公司 A kind of integrated circuit and its manufacture method
CN104241280B (en) * 2013-06-18 2017-11-10 中芯国际集成电路制造(上海)有限公司 A kind of integrated circuit and its manufacture method
CN104241281B (en) * 2013-06-18 2017-09-01 中芯国际集成电路制造(上海)有限公司 A kind of integrated circuit and its manufacture method
CN104241267B (en) * 2013-06-18 2017-08-01 中芯国际集成电路制造(上海)有限公司 A kind of integrated circuit and its manufacture method
CN104716136B (en) * 2013-12-17 2018-02-06 中芯国际集成电路制造(上海)有限公司 A kind of integrated circuit and its manufacture method
CN104810366B (en) * 2014-01-26 2018-09-11 中芯国际集成电路制造(上海)有限公司 A kind of integrated circuit and its manufacturing method
WO2016048367A1 (en) * 2014-09-26 2016-03-31 Intel Corporation Integrated circuit die having backside passive components and methods associated therewith
KR102398862B1 (en) 2015-05-13 2022-05-16 삼성전자주식회사 Semiconductor device and the fabricating method thereof
KR101666752B1 (en) * 2015-06-18 2016-10-14 주식회사 동부하이텍 Semiconductor device and radio frequency module formed on high resistivity substrate
JP6591312B2 (en) * 2016-02-25 2019-10-16 ルネサスエレクトロニクス株式会社 Semiconductor device
US11031303B1 (en) 2020-01-15 2021-06-08 Taiwan Semiconductor Manufacturing Company Limited Deep trench isolation structure and method of making the same
CN111968975A (en) * 2020-08-07 2020-11-20 长江存储科技有限责任公司 Circuit chip, three-dimensional memory and method for preparing three-dimensional memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2953213B2 (en) * 1992-08-22 1999-09-27 日本電気株式会社 CMOS integrated circuit
JP3631464B2 (en) * 2001-12-27 2005-03-23 株式会社東芝 Semiconductor device
US20030234438A1 (en) * 2002-06-24 2003-12-25 Motorola, Inc. Integrated circuit structure for mixed-signal RF applications and circuits
KR20060010885A (en) * 2004-07-29 2006-02-03 매그나칩 반도체 유한회사 Image sensor capable of interrupting inter block noise inflow

Also Published As

Publication number Publication date
CN100536138C (en) 2009-09-02
KR20070105843A (en) 2007-10-31
CN101064307A (en) 2007-10-31
TWI345301B (en) 2011-07-11
KR100854440B1 (en) 2008-08-26

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