SG140564A1 - Single conformal junction nanowire photovoltaic devices - Google Patents
Single conformal junction nanowire photovoltaic devicesInfo
- Publication number
- SG140564A1 SG140564A1 SG200706158-3A SG2007061583A SG140564A1 SG 140564 A1 SG140564 A1 SG 140564A1 SG 2007061583 A SG2007061583 A SG 2007061583A SG 140564 A1 SG140564 A1 SG 140564A1
- Authority
- SG
- Singapore
- Prior art keywords
- junction
- devices
- photovoltaic
- conformal
- photovoltaic devices
- Prior art date
Links
- 239000002070 nanowire Substances 0.000 title abstract 2
- 239000002086 nanomaterial Substances 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035245—Superlattices; Multiple quantum well structures characterised by amorphous semiconductor layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51008706A | 2006-08-25 | 2006-08-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG140564A1 true SG140564A1 (en) | 2008-03-28 |
Family
ID=38828518
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200706158-3A SG140564A1 (en) | 2006-08-25 | 2007-08-22 | Single conformal junction nanowire photovoltaic devices |
SG201000715-1A SG159511A1 (en) | 2006-08-25 | 2007-08-22 | Single conformal junction nanowire photovoltaic devices |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG201000715-1A SG159511A1 (en) | 2006-08-25 | 2007-08-22 | Single conformal junction nanowire photovoltaic devices |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1892769A2 (zh) |
JP (1) | JP2008053730A (zh) |
CN (1) | CN101132028B (zh) |
SG (2) | SG140564A1 (zh) |
Families Citing this family (56)
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WO2008156421A2 (en) * | 2007-06-19 | 2008-12-24 | Qunano Ab | Nanowire-based solar cell structure |
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WO2009109445A2 (en) * | 2008-02-29 | 2009-09-11 | International Business Machines Corporation | Photovoltaic devices with high-aspect-ratio nanostructures |
US8592675B2 (en) | 2008-02-29 | 2013-11-26 | International Business Machines Corporation | Photovoltaic devices with enhanced efficiencies using high-aspect-ratio nanostructures |
US8551558B2 (en) | 2008-02-29 | 2013-10-08 | International Business Machines Corporation | Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures |
CN101562204B (zh) * | 2008-04-18 | 2011-03-23 | 鸿富锦精密工业(深圳)有限公司 | 太阳能电池 |
SE533090C2 (sv) * | 2008-07-09 | 2010-06-22 | Qunano Ab | Nanostrukturerad ljusdiod |
GB2462108A (en) | 2008-07-24 | 2010-01-27 | Sharp Kk | Deposition of a thin film on a nanostructured surface |
CN102144298B (zh) * | 2008-09-04 | 2013-07-31 | 昆南诺股份有限公司 | 纳米结构的光电二极管 |
US8269985B2 (en) * | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
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US20100307579A1 (en) * | 2009-06-03 | 2010-12-09 | Massachusetts Institute Of Technology | Pseudo-Periodic Structure for Use in Thin Film Solar Cells |
JP5582744B2 (ja) * | 2009-08-20 | 2014-09-03 | 日立造船株式会社 | 太陽電池およびその製造方法並びに太陽電池装置 |
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CN102148279A (zh) * | 2011-01-15 | 2011-08-10 | 郑州大学 | 基于ⅱ-ⅵ族化合物半导体/硅纳米孔柱阵列的太阳能电池及其制备方法 |
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CN102163638A (zh) * | 2011-03-21 | 2011-08-24 | 中国科学院半导体研究所 | 基于刻蚀技术的sis结太阳能电池 |
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CN102254969B (zh) * | 2011-08-17 | 2012-11-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于纳米柱阵列的光电器件及其制作方法 |
CN102315290B (zh) * | 2011-09-23 | 2013-01-30 | 中国科学院光电技术研究所 | 一种全光谱吸收增强的氢化非晶硅薄膜太阳能电池 |
US8673750B2 (en) * | 2011-12-19 | 2014-03-18 | Palo Alto Research Center Incorporated | Single crystal silicon TFTs made by lateral crystallization from a nanowire seed |
CN102569480B (zh) * | 2012-01-01 | 2014-12-31 | 浙江大学 | 一种纳米结构的氧化亚铜基pin结太阳能电池及其制备方法 |
US9911886B2 (en) * | 2012-01-10 | 2018-03-06 | The Boeing Company | Lateral solar cell structure |
WO2013126432A1 (en) * | 2012-02-21 | 2013-08-29 | California Institute Of Technology | Axially-integrated epitaxially-grown tandem wire arrays |
JP6290199B2 (ja) * | 2012-07-06 | 2018-03-07 | クナノ・アーベー | 径方向ナノワイヤエサキダイオードデバイスおよび方法 |
US20150303332A1 (en) * | 2012-08-22 | 2015-10-22 | Northwestern University | Anodes, solar cells and methods of making same |
KR101393092B1 (ko) * | 2012-09-14 | 2014-05-12 | 한국광기술원 | Ⅲ-ⅴ족 화합물 태양전지 및 그 제조방법 |
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SE537287C2 (sv) * | 2013-06-05 | 2015-03-24 | Sol Voltaics Ab | En solcellsstruktur och en metod för tillverkning av densamma |
WO2015001626A1 (ja) * | 2013-07-03 | 2015-01-08 | 株式会社日立製作所 | 太陽電池セルおよびその製造方法 |
US20160204283A1 (en) * | 2013-08-18 | 2016-07-14 | Ramot At Tel-Aviv University Ltd. | Photovoltaic cell and method of fabricating the same |
CN103928541A (zh) * | 2014-04-29 | 2014-07-16 | 集美大学 | 一种具有立体微结构阵列的太阳能电池 |
CN105280747B (zh) * | 2015-07-15 | 2017-10-27 | 常州天合光能有限公司 | 一种异质结太阳电池及其制备方法 |
CN106098812B (zh) * | 2016-06-23 | 2017-12-05 | 南京大学 | 一种基于氧掺杂碲化锌纳米线阵列的太阳电池及制备方法 |
KR101904607B1 (ko) | 2016-10-17 | 2018-10-04 | 울산과학기술원 | 3차원 접합 실리콘 태양전지 및 이의 제조방법 |
CN107601439B (zh) * | 2017-08-22 | 2020-01-07 | 山西师范大学 | 一种MnTe纳米线及其制备方法 |
CN109616553B (zh) * | 2018-11-22 | 2020-06-30 | 中南大学 | 一种新型纤锌矿GaAs核壳纳米线光电探测器的制备方法 |
CN110137320B (zh) * | 2019-05-29 | 2021-07-23 | 清华大学 | 近红外异质结发光二极管阵列及其形成方法 |
CN110965025B (zh) * | 2019-12-20 | 2021-07-23 | 平顶山学院 | 一种CdS/Si纳米薄膜异质结的制备方法 |
CN113555458A (zh) * | 2021-07-21 | 2021-10-26 | 成都中建材光电材料有限公司 | 薄膜太阳能电池及其制作方法 |
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US6969897B2 (en) * | 2002-12-10 | 2005-11-29 | Kim Ii John | Optoelectronic devices employing fibers for light collection and emission |
JP3951019B2 (ja) * | 2002-12-20 | 2007-08-01 | 独立行政法人物質・材料研究機構 | 三酸化タングステンナノ構造物とその複合体ならびにそれらの製造方法 |
JP2005059135A (ja) * | 2003-08-11 | 2005-03-10 | Canon Inc | カーボンナノチューブを用いたデバイス及びその製造方法 |
US7662706B2 (en) * | 2003-11-26 | 2010-02-16 | Qunano Ab | Nanostructures formed of branched nanowhiskers and methods of producing the same |
JP2008518456A (ja) * | 2004-10-27 | 2008-05-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 調整可能なエネルギバンドギャップを有する半導体装置 |
US7763794B2 (en) * | 2004-12-01 | 2010-07-27 | Palo Alto Research Center Incorporated | Heterojunction photovoltaic cell |
-
2007
- 2007-08-20 EP EP07114598A patent/EP1892769A2/en not_active Withdrawn
- 2007-08-22 SG SG200706158-3A patent/SG140564A1/en unknown
- 2007-08-22 SG SG201000715-1A patent/SG159511A1/en unknown
- 2007-08-24 JP JP2007217729A patent/JP2008053730A/ja active Pending
- 2007-08-27 CN CN2007101424896A patent/CN101132028B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008053730A (ja) | 2008-03-06 |
CN101132028B (zh) | 2011-12-14 |
CN101132028A (zh) | 2008-02-27 |
SG159511A1 (en) | 2010-03-30 |
EP1892769A2 (en) | 2008-02-27 |
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