SG136118A1 - Method and apparatus for performing dark field double dipole lithography (ddl) - Google Patents

Method and apparatus for performing dark field double dipole lithography (ddl)

Info

Publication number
SG136118A1
SG136118A1 SG200702599-2A SG2007025992A SG136118A1 SG 136118 A1 SG136118 A1 SG 136118A1 SG 2007025992 A SG2007025992 A SG 2007025992A SG 136118 A1 SG136118 A1 SG 136118A1
Authority
SG
Singapore
Prior art keywords
ddl
dark field
field double
double dipole
performing dark
Prior art date
Application number
SG200702599-2A
Other languages
English (en)
Inventor
Duan-Fu Stephen Hsu
Sangbong Park
Douglas Van Den Broeke
Jang Fung Chen
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG136118A1 publication Critical patent/SG136118A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
SG200702599-2A 2006-04-06 2007-04-09 Method and apparatus for performing dark field double dipole lithography (ddl) SG136118A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78956006P 2006-04-06 2006-04-06

Publications (1)

Publication Number Publication Date
SG136118A1 true SG136118A1 (en) 2007-10-29

Family

ID=38283157

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200702599-2A SG136118A1 (en) 2006-04-06 2007-04-09 Method and apparatus for performing dark field double dipole lithography (ddl)

Country Status (7)

Country Link
US (3) US7824826B2 (ja)
EP (2) EP1843202B1 (ja)
JP (2) JP4729527B2 (ja)
KR (1) KR100865768B1 (ja)
CN (2) CN102033422B (ja)
SG (1) SG136118A1 (ja)
TW (1) TWI349162B (ja)

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US8250495B2 (en) * 2009-01-16 2012-08-21 Mentor Graphics Corporation Mask decomposition for double dipole lithography
US8271910B2 (en) * 2010-03-29 2012-09-18 International Business Machines Corporation EMF correction model calibration using asymmetry factor data obtained from aerial images or a patterned layer
US8234603B2 (en) * 2010-07-14 2012-07-31 International Business Machines Corporation Method for fast estimation of lithographic binding patterns in an integrated circuit layout
US8575020B2 (en) 2011-03-02 2013-11-05 Texas Instruments Incorporated Pattern-split decomposition strategy for double-patterned lithography process
US8580675B2 (en) * 2011-03-02 2013-11-12 Texas Instruments Incorporated Two-track cross-connect in double-patterned structure using rectangular via
WO2012119105A2 (en) * 2011-03-02 2012-09-07 Texas Instruments Incorporated Hybrid pitch-split pattern-split litrography process
NL2009168A (en) * 2011-08-19 2013-02-21 Asml Netherlands Bv Lithographic apparatus and method.
EP2570854B1 (en) 2011-09-16 2016-11-30 Imec Illumination-source shape definition in optical lithography
US8887106B2 (en) 2011-12-28 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of generating a bias-adjusted layout design of a conductive feature and method of generating a simulation model of a predefined fabrication process
US8806391B2 (en) * 2012-07-31 2014-08-12 United Microelectronics Corp. Method of optical proximity correction according to complexity of mask pattern
US8954898B2 (en) 2013-03-15 2015-02-10 International Business Machines Corporation Source-mask optimization for a lithography process
US8993217B1 (en) 2013-04-04 2015-03-31 Western Digital (Fremont), Llc Double exposure technique for high resolution disk imaging
JP5750476B2 (ja) * 2013-07-22 2015-07-22 東京応化工業株式会社 レジストパターン形成方法
CN111443576B (zh) 2015-04-07 2023-04-07 联华电子股份有限公司 照明系统以及使用其形成鳍状结构的方法
US9524361B2 (en) 2015-04-20 2016-12-20 United Microelectronics Corp. Method for decomposing a layout of an integrated circuit

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US6915505B2 (en) * 2002-03-25 2005-07-05 Asml Masktools B.V. Method and apparatus for performing rule-based gate shrink utilizing dipole illumination
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SG137657A1 (en) 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination
JP4617272B2 (ja) 2005-04-12 2011-01-19 エーエスエムエル マスクツールズ ビー．ブイ． 二重露光リソグラフィを実行するための方法、プログラム製品及びデバイス製造方法
EP1843202B1 (en) * 2006-04-06 2015-02-18 ASML Netherlands B.V. Method for performing dark field double dipole lithography

Also Published As

Publication number Publication date
US8632930B2 (en) 2014-01-21
US20080020296A1 (en) 2008-01-24
KR100865768B1 (ko) 2008-10-28
US7981576B2 (en) 2011-07-19
JP2011141544A (ja) 2011-07-21
CN101135861B (zh) 2010-12-22
JP2007328323A (ja) 2007-12-20
TW200745739A (en) 2007-12-16
CN102033422A (zh) 2011-04-27
JP5588853B2 (ja) 2014-09-10
CN102033422B (zh) 2015-05-06
EP1843202A2 (en) 2007-10-10
KR20070100182A (ko) 2007-10-10
US20110236808A1 (en) 2011-09-29
EP1843202A3 (en) 2007-12-12
EP1843202B1 (en) 2015-02-18
TWI349162B (en) 2011-09-21
US20110014552A1 (en) 2011-01-20
US7824826B2 (en) 2010-11-02
CN101135861A (zh) 2008-03-05
JP4729527B2 (ja) 2011-07-20
EP2267530A1 (en) 2010-12-29

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