SG131754A1 - Semiconductor storage device and information apparatus - Google Patents

Semiconductor storage device and information apparatus

Info

Publication number
SG131754A1
SG131754A1 SG200207468-0A SG2002074680A SG131754A1 SG 131754 A1 SG131754 A1 SG 131754A1 SG 2002074680 A SG2002074680 A SG 2002074680A SG 131754 A1 SG131754 A1 SG 131754A1
Authority
SG
Singapore
Prior art keywords
memory
decoder section
storage device
semiconductor storage
cells
Prior art date
Application number
SG200207468-0A
Other languages
English (en)
Inventor
Kaname Yamano
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of SG131754A1 publication Critical patent/SG131754A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
SG200207468-0A 2001-12-18 2002-12-05 Semiconductor storage device and information apparatus SG131754A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001385152A JP3983048B2 (ja) 2001-12-18 2001-12-18 半導体記憶装置および情報機器

Publications (1)

Publication Number Publication Date
SG131754A1 true SG131754A1 (en) 2007-05-28

Family

ID=19187792

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200207468-0A SG131754A1 (en) 2001-12-18 2002-12-05 Semiconductor storage device and information apparatus

Country Status (8)

Country Link
US (1) US6751131B2 (ja)
EP (1) EP1321945B1 (ja)
JP (1) JP3983048B2 (ja)
KR (1) KR100459604B1 (ja)
CN (1) CN1288665C (ja)
DE (1) DE60223894T8 (ja)
SG (1) SG131754A1 (ja)
TW (1) TW578162B (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004013961A (ja) * 2002-06-04 2004-01-15 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US7372731B2 (en) * 2003-06-17 2008-05-13 Sandisk Il Ltd. Flash memories with adaptive reference voltages
WO2006129344A1 (ja) * 2005-05-30 2006-12-07 Spansion Llc 半導体装置
US7180782B2 (en) * 2005-06-10 2007-02-20 Macronix International Co., Ltd. Read source line compensation in a non-volatile memory
TWI316712B (en) * 2006-06-27 2009-11-01 Silicon Motion Inc Non-volatile memory, repair circuit, and repair method thereof
JP2008192232A (ja) * 2007-02-05 2008-08-21 Spansion Llc 半導体装置およびその制御方法
US7643337B2 (en) * 2007-07-17 2010-01-05 Macronix International Co., Ltd. Multi-bit flash memory and reading method thereof
US8072802B2 (en) * 2008-12-05 2011-12-06 Spansion Llc Memory employing redundant cell array of multi-bit cells
KR101553375B1 (ko) 2009-04-30 2015-09-16 삼성전자주식회사 플래시 메모리 장치
JP5494455B2 (ja) * 2010-12-09 2014-05-14 富士通セミコンダクター株式会社 半導体記憶装置
JP2011151404A (ja) * 2011-03-03 2011-08-04 Spansion Llc 半導体装置
KR102162701B1 (ko) * 2013-07-30 2020-10-07 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 이를 이용하는 반도체 시스템
JP6356837B1 (ja) * 2017-01-13 2018-07-11 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置および読出し方法
US10546629B1 (en) * 2018-10-10 2020-01-28 Micron Technology, Inc. Memory cell sensing based on precharging an access line using a sense amplifier

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667330A (en) * 1983-04-04 1987-05-19 Oki Electric Industry Co., Ltd. Semiconductor memory device
US5047983A (en) * 1984-09-26 1991-09-10 Hitachi, Ltd. Semiconductor storage device with redundancy arrangement
US5436911A (en) * 1990-08-29 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device comprising a test circuit and a method of operation thereof
US6212096B1 (en) * 1996-03-29 2001-04-03 Sgs-Thomson Microelectronics S.R.L. Data reading path management architecture for a memory device, particularly for non-volatile memories

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57203291A (en) 1981-06-09 1982-12-13 Mitsubishi Electric Corp Memory circuit
US6535434B2 (en) * 2001-04-05 2003-03-18 Saifun Semiconductors Ltd. Architecture and scheme for a non-strobed read sequence

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667330A (en) * 1983-04-04 1987-05-19 Oki Electric Industry Co., Ltd. Semiconductor memory device
US5047983A (en) * 1984-09-26 1991-09-10 Hitachi, Ltd. Semiconductor storage device with redundancy arrangement
US5436911A (en) * 1990-08-29 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device comprising a test circuit and a method of operation thereof
US6212096B1 (en) * 1996-03-29 2001-04-03 Sgs-Thomson Microelectronics S.R.L. Data reading path management architecture for a memory device, particularly for non-volatile memories

Also Published As

Publication number Publication date
CN1288665C (zh) 2006-12-06
EP1321945B1 (en) 2007-12-05
KR20030051286A (ko) 2003-06-25
EP1321945A1 (en) 2003-06-25
US6751131B2 (en) 2004-06-15
TW578162B (en) 2004-03-01
TW200304149A (en) 2003-09-16
DE60223894T2 (de) 2008-10-23
CN1427417A (zh) 2003-07-02
US20030112664A1 (en) 2003-06-19
JP2003187587A (ja) 2003-07-04
JP3983048B2 (ja) 2007-09-26
KR100459604B1 (ko) 2004-12-03
DE60223894D1 (de) 2008-01-17
DE60223894T8 (de) 2009-02-12

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