SG125911A1 - Method and apparatus for decomposing semiconductordevice patterns into phase and chrome regions for chromeless phase lithography - Google Patents

Method and apparatus for decomposing semiconductordevice patterns into phase and chrome regions for chromeless phase lithography

Info

Publication number
SG125911A1
SG125911A1 SG200301491A SG200301491A SG125911A1 SG 125911 A1 SG125911 A1 SG 125911A1 SG 200301491 A SG200301491 A SG 200301491A SG 200301491 A SG200301491 A SG 200301491A SG 125911 A1 SG125911 A1 SG 125911A1
Authority
SG
Singapore
Prior art keywords
phase
features
semiconductordevice
decomposing
patterns
Prior art date
Application number
SG200301491A
Other languages
English (en)
Inventor
Van Den Douglas Broeke
Jang Fung Chen
Thomas Laidig
Kurt E Wampler
Duan-Fu Stephen Hsu
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG125911A1 publication Critical patent/SG125911A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200301491A 2002-03-25 2003-03-25 Method and apparatus for decomposing semiconductordevice patterns into phase and chrome regions for chromeless phase lithography SG125911A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36654502P 2002-03-25 2002-03-25

Publications (1)

Publication Number Publication Date
SG125911A1 true SG125911A1 (en) 2006-10-30

Family

ID=27805318

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200301491A SG125911A1 (en) 2002-03-25 2003-03-25 Method and apparatus for decomposing semiconductordevice patterns into phase and chrome regions for chromeless phase lithography
SG200608891-8A SG144749A1 (en) 2002-03-25 2003-03-25 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200608891-8A SG144749A1 (en) 2002-03-25 2003-03-25 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography

Country Status (8)

Country Link
US (2) US6851103B2 (enExample)
EP (1) EP1349002B1 (enExample)
JP (2) JP4102701B2 (enExample)
KR (1) KR100566151B1 (enExample)
CN (1) CN100405221C (enExample)
DE (1) DE60306438T2 (enExample)
SG (2) SG125911A1 (enExample)
TW (1) TWI301229B (enExample)

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JPH06335801A (ja) * 1993-05-24 1994-12-06 Okuma Mach Works Ltd バランス修正機能付数値制御旋盤
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SG125911A1 (en) * 2002-03-25 2006-10-30 Asml Masktools Bv Method and apparatus for decomposing semiconductordevice patterns into phase and chrome regions for chromeless phase lithography
EP1385052B1 (en) * 2002-07-26 2006-05-31 ASML MaskTools B.V. Orientation dependent shielding for use with dipole illumination techniques
SG137657A1 (en) * 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination
US7234128B2 (en) * 2003-10-03 2007-06-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving the critical dimension uniformity of patterned features on wafers
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US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
US7493587B2 (en) * 2005-03-02 2009-02-17 James Word Chromeless phase shifting mask for integrated circuits using interior region
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CN101228527B (zh) 2005-05-20 2011-03-23 凯登斯设计系统有限公司 有制造意识的ic设计处理和有设计意识的ic制造处理
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US7732102B2 (en) * 2005-07-14 2010-06-08 Freescale Semiconductor, Inc. Cr-capped chromeless phase lithography
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US7934177B2 (en) * 2007-02-06 2011-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for a pattern layout split
US7799487B2 (en) * 2007-02-09 2010-09-21 Ayman Yehia Hamouda Dual metric OPC
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JP5355112B2 (ja) * 2009-01-28 2013-11-27 株式会社東芝 パターンレイアウト作成方法
JP5407623B2 (ja) * 2009-07-16 2014-02-05 富士通セミコンダクター株式会社 マスクパターン評価方法、マスクパターン補正方法及びマスクパターン発生装置
CN104040428B (zh) * 2012-02-15 2018-11-13 大日本印刷株式会社 相移掩模及使用该相移掩模的抗蚀图案形成方法

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US6258493B1 (en) * 1996-09-18 2001-07-10 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US20010021476A1 (en) * 2000-01-13 2001-09-13 Fritz Gans Phase mask
US20020015899A1 (en) * 2000-05-01 2002-02-07 Chen Jang Fung Hybrid phase-shift mask

Also Published As

Publication number Publication date
JP4558770B2 (ja) 2010-10-06
TW200307190A (en) 2003-12-01
KR20030077447A (ko) 2003-10-01
EP1349002B1 (en) 2006-06-28
EP1349002A2 (en) 2003-10-01
US20040010770A1 (en) 2004-01-15
EP1349002A3 (en) 2004-03-17
US20050125765A1 (en) 2005-06-09
KR100566151B1 (ko) 2006-03-31
SG144749A1 (en) 2008-08-28
US6851103B2 (en) 2005-02-01
JP4102701B2 (ja) 2008-06-18
US7549140B2 (en) 2009-06-16
DE60306438T2 (de) 2007-01-04
CN1450403A (zh) 2003-10-22
CN100405221C (zh) 2008-07-23
JP2007323091A (ja) 2007-12-13
DE60306438D1 (de) 2006-08-10
JP2003295413A (ja) 2003-10-15
TWI301229B (en) 2008-09-21

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