SG125213A1 - Manufacturing method for electronic device - Google Patents

Manufacturing method for electronic device

Info

Publication number
SG125213A1
SG125213A1 SG200601025A SG200601025A SG125213A1 SG 125213 A1 SG125213 A1 SG 125213A1 SG 200601025 A SG200601025 A SG 200601025A SG 200601025 A SG200601025 A SG 200601025A SG 125213 A1 SG125213 A1 SG 125213A1
Authority
SG
Singapore
Prior art keywords
manufacturing
electronic device
interconnection
pedestal
substrate
Prior art date
Application number
SG200601025A
Other languages
English (en)
Inventor
Nobuaki Hashimoto
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of SG125213A1 publication Critical patent/SG125213A1/en

Links

Classifications

    • G—PHYSICS
    • G07—CHECKING-DEVICES
    • G07F—COIN-FREED OR LIKE APPARATUS
    • G07F13/00—Coin-freed apparatus for controlling dispensing or fluids, semiliquids or granular material from reservoirs
    • G07F13/10—Coin-freed apparatus for controlling dispensing or fluids, semiliquids or granular material from reservoirs with associated dispensing of containers, e.g. cups or other articles
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • G—PHYSICS
    • G07—CHECKING-DEVICES
    • G07F—COIN-FREED OR LIKE APPARATUS
    • G07F17/00—Coin-freed apparatus for hiring articles; Coin-freed facilities or services
    • G07F17/0092—Coin-freed apparatus for hiring articles; Coin-freed facilities or services for assembling and dispensing of pharmaceutical articles
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SG200601025A 2005-02-25 2006-02-16 Manufacturing method for electronic device SG125213A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005050762 2005-02-25
JP2005127594A JP2006270009A (ja) 2005-02-25 2005-04-26 電子装置の製造方法

Publications (1)

Publication Number Publication Date
SG125213A1 true SG125213A1 (en) 2006-09-29

Family

ID=36931319

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200601025A SG125213A1 (en) 2005-02-25 2006-02-16 Manufacturing method for electronic device

Country Status (5)

Country Link
US (1) US20060192299A1 (ja)
JP (1) JP2006270009A (ja)
KR (1) KR100754557B1 (ja)
SG (1) SG125213A1 (ja)
TW (1) TW200636891A (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007317747A (ja) * 2006-05-23 2007-12-06 Seiko Epson Corp 基板分割方法及び液体噴射ヘッドの製造方法
JP4306717B2 (ja) * 2006-11-09 2009-08-05 セイコーエプソン株式会社 シリコンデバイスの製造方法及び液体噴射ヘッドの製造方法
JP2009010320A (ja) * 2007-05-28 2009-01-15 Casio Comput Co Ltd 半導体装置およびその製造方法
JP2011014607A (ja) * 2009-06-30 2011-01-20 Renesas Electronics Corp 半導体装置の製造方法
JP5672678B2 (ja) * 2009-08-21 2015-02-18 Tdk株式会社 電子部品及びその製造方法
JP2013207006A (ja) * 2012-03-28 2013-10-07 Toppan Printing Co Ltd 貫通電極付き配線基板及びその製造方法
JP6011002B2 (ja) * 2012-04-23 2016-10-19 セイコーエプソン株式会社 液体噴射ヘッドの製造方法、及び、液体噴射装置の製造方法
JP6161411B2 (ja) * 2012-06-22 2017-07-12 キヤノン株式会社 液体吐出装置の製造方法
FR3041147B1 (fr) 2015-09-14 2018-02-02 3Dis Tech Procede d'integration d'au moins une interconnexion 3d pour la fabrication de circuit integre
JP6927179B2 (ja) 2018-10-12 2021-08-25 Tdk株式会社 電気部品の積層体とその製造方法
TWI719866B (zh) * 2020-03-25 2021-02-21 矽品精密工業股份有限公司 電子封裝件及其支撐結構與製法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130854A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体集積回路
US4992847A (en) * 1988-06-06 1991-02-12 Regents Of The University Of California Thin-film chip-to-substrate interconnect and methods for making same
US6365440B1 (en) * 1998-09-03 2002-04-02 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method for contacting a circuit chip
US20030006493A1 (en) * 2001-07-04 2003-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method thereof
US20030024731A1 (en) * 2000-03-15 2003-02-06 Per-Erik Nordal Vertical electrical interconnections in a stack

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW448524B (en) * 1997-01-17 2001-08-01 Seiko Epson Corp Electronic component, semiconductor device, manufacturing method therefor, circuit board and electronic equipment
IL123207A0 (en) * 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
MY124687A (en) * 1998-05-20 2006-06-30 Hitachi Chemical Co Ltd Insulating adhesive for electronic parts, and lead frame and semiconductor device using the same
JP2002083876A (ja) * 2000-09-07 2002-03-22 Sanyo Electric Co Ltd 半導体集積回路装置の製造方法
US6767828B2 (en) * 2001-10-05 2004-07-27 International Business Machines Corporation Method for forming patterns for semiconductor devices
JP2004031586A (ja) * 2002-06-25 2004-01-29 Sony Corp 半導体装置の製造方法
JP2004165191A (ja) * 2002-11-08 2004-06-10 Oki Electric Ind Co Ltd 半導体装置、半導体装置の製造方法及びカメラシステム
JP3772983B2 (ja) * 2003-03-13 2006-05-10 セイコーエプソン株式会社 電子装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130854A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体集積回路
US4992847A (en) * 1988-06-06 1991-02-12 Regents Of The University Of California Thin-film chip-to-substrate interconnect and methods for making same
US6365440B1 (en) * 1998-09-03 2002-04-02 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method for contacting a circuit chip
US20030024731A1 (en) * 2000-03-15 2003-02-06 Per-Erik Nordal Vertical electrical interconnections in a stack
US20030006493A1 (en) * 2001-07-04 2003-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method thereof

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KR100754557B1 (ko) 2007-09-05

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