SG120919A1 - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method

Info

Publication number
SG120919A1
SG120919A1 SG200301500A SG200301500A SG120919A1 SG 120919 A1 SG120919 A1 SG 120919A1 SG 200301500 A SG200301500 A SG 200301500A SG 200301500 A SG200301500 A SG 200301500A SG 120919 A1 SG120919 A1 SG 120919A1
Authority
SG
Singapore
Prior art keywords
device manufacturing
lithographic apparatus
lithographic
manufacturing
Prior art date
Application number
SG200301500A
Other languages
English (en)
Inventor
Levinus Pieter Bakker
Jeroen Jonkers
Van Antonius Johan Dijsseldonk
Marcel Mathijs Theodo Dierichs
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG120919A1 publication Critical patent/SG120919A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
    • G21K1/04—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
    • G21K1/04—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers
    • G21K1/043—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers changing time structure of beams by mechanical means, e.g. choppers, spinning filter wheels
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nanotechnology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200301500A 2002-03-28 2003-03-26 Lithographic apparatus and device manufacturing method SG120919A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02252338A EP1349008A1 (en) 2002-03-28 2002-03-28 Lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
SG120919A1 true SG120919A1 (en) 2006-04-26

Family

ID=27798926

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200301500A SG120919A1 (en) 2002-03-28 2003-03-26 Lithographic apparatus and device manufacturing method

Country Status (7)

Country Link
US (1) US6987275B2 (ja)
EP (1) EP1349008A1 (ja)
JP (1) JP3972084B2 (ja)
KR (1) KR100592821B1 (ja)
CN (1) CN100351699C (ja)
SG (1) SG120919A1 (ja)
TW (1) TWI254976B (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4235480B2 (ja) * 2002-09-03 2009-03-11 キヤノン株式会社 差動排気システム及び露光装置
JP3703447B2 (ja) 2002-09-06 2005-10-05 キヤノン株式会社 差動排気システム及び露光装置
WO2004081998A1 (ja) * 2003-02-20 2004-09-23 Nikon Corporation Ｘ線発生装置及びｅｕｖ露光装置
US7023524B2 (en) * 2003-12-18 2006-04-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102004037521B4 (de) * 2004-07-30 2011-02-10 Xtreme Technologies Gmbh Vorrichtung zur Bereitstellung von Targetmaterial für die Erzeugung kurzwelliger elektromagnetischer Strahlung
KR100669803B1 (ko) * 2004-12-04 2007-01-16 삼성에스디아이 주식회사 증착 물질 공급장치 및 이를 구비한 증착장치
DE602006004331D1 (de) * 2005-04-19 2009-01-29 Koninkl Philips Electronics Nv Vorrichtung zur strahlungslenkung auf eine schicht, gerät mit einer derartigen vorrichtung und verfahren unter verwendung eines derartigen geräts
US7872729B2 (en) * 2006-08-31 2011-01-18 Christoph Noelscher Filter system for light source
US7719661B2 (en) * 2007-11-27 2010-05-18 Nikon Corporation Illumination optical apparatus, exposure apparatus, and method for producing device
FR2938116B1 (fr) * 2008-11-04 2011-03-11 Aplinov Procede et dispositif de chauffage d'une couche d'une plaque par amorcage et flux lumineux.
JP5683902B2 (ja) 2010-10-29 2015-03-11 株式会社東芝 レーザ・イオン源
EP2533078B1 (en) 2011-06-09 2014-02-12 ASML Netherlands BV Radiation source and lithographic apparatus
US9609731B2 (en) * 2014-07-07 2017-03-28 Media Lario Srl Systems and methods for synchronous operation of debris-mitigation devices
DE102019211922A1 (de) 2019-08-08 2019-09-26 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und verfahren zum betrieb derselben
CN111250662B (zh) * 2020-01-21 2021-05-25 三鑫重工机械有限公司 一种铸件接触式浇注定位装置
US11632849B2 (en) * 2021-08-27 2023-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for mitigating contamination

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4408338A (en) * 1981-12-31 1983-10-04 International Business Machines Corporation Pulsed electromagnetic radiation source having a barrier for discharged debris
JPS6136719A (ja) * 1984-07-30 1986-02-21 Nec Corp 同期式光路開閉装置及びその操作法
WO2001079936A1 (en) * 2000-04-18 2001-10-25 Silicon Valley Group, Inc. Mitigation of photoresist outgassing in vacuum lithography
EP1211918A1 (en) * 2000-12-01 2002-06-05 Enea Ente Per Le Nuove Tecnologie, L'energia E L'ambiente Method of stopping ions and small debris in extreme-ultraviolet and soft x-rays plasma sources by using krypton
US20020090054A1 (en) * 2001-01-10 2002-07-11 Michael Sogard Apparatus and method for containing debris from laser plasma radiation sources

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866517A (en) * 1986-09-11 1989-09-12 Hoya Corp. Laser plasma X-ray generator capable of continuously generating X-rays
JP2614457B2 (ja) * 1986-09-11 1997-05-28 ホーヤ 株式会社 レーザープラズマｘ線発生装置及びｘ線射出口開閉機構
JPS63292553A (ja) * 1987-05-25 1988-11-29 Agency Of Ind Science & Technol Ｘ線発生装置におけるプラズマ飛散防止機構
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
EP0527166B1 (de) * 1990-05-02 1995-06-14 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Belichtungsvorrichtung
JPH08241847A (ja) * 1995-03-07 1996-09-17 Hitachi Ltd 露光装置及び露光方法
WO1997033205A1 (en) * 1996-03-06 1997-09-12 Philips Electronics N.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
NL1008352C2 (nl) * 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4408338A (en) * 1981-12-31 1983-10-04 International Business Machines Corporation Pulsed electromagnetic radiation source having a barrier for discharged debris
JPS6136719A (ja) * 1984-07-30 1986-02-21 Nec Corp 同期式光路開閉装置及びその操作法
WO2001079936A1 (en) * 2000-04-18 2001-10-25 Silicon Valley Group, Inc. Mitigation of photoresist outgassing in vacuum lithography
EP1211918A1 (en) * 2000-12-01 2002-06-05 Enea Ente Per Le Nuove Tecnologie, L'energia E L'ambiente Method of stopping ions and small debris in extreme-ultraviolet and soft x-rays plasma sources by using krypton
US20020090054A1 (en) * 2001-01-10 2002-07-11 Michael Sogard Apparatus and method for containing debris from laser plasma radiation sources

Also Published As

Publication number Publication date
KR20030078692A (ko) 2003-10-08
EP1349008A1 (en) 2003-10-01
JP2003318107A (ja) 2003-11-07
US6987275B2 (en) 2006-01-17
JP3972084B2 (ja) 2007-09-05
CN1448790A (zh) 2003-10-15
KR100592821B1 (ko) 2006-06-23
TWI254976B (en) 2006-05-11
TW200402086A (en) 2004-02-01
US20040013226A1 (en) 2004-01-22
CN100351699C (zh) 2007-11-28

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