SG115622A1 - Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer - Google Patents

Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer

Info

Publication number
SG115622A1
SG115622A1 SG200400844A SG200400844A SG115622A1 SG 115622 A1 SG115622 A1 SG 115622A1 SG 200400844 A SG200400844 A SG 200400844A SG 200400844 A SG200400844 A SG 200400844A SG 115622 A1 SG115622 A1 SG 115622A1
Authority
SG
Singapore
Prior art keywords
exchange
pinned layer
coupled structure
magnetoresistive device
heusler alloy
Prior art date
Application number
SG200400844A
Other languages
English (en)
Inventor
J Carey Matthew
R Childress Jeffrey
Maat Stefan
Original Assignee
Hitachi Global Storage Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Global Storage Tech filed Critical Hitachi Global Storage Tech
Publication of SG115622A1 publication Critical patent/SG115622A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/455—Arrangements for functional testing of heads; Measuring arrangements for heads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/001—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/012—Recording on, or reproducing or erasing from, magnetic disks

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
SG200400844A 2003-02-24 2004-02-24 Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer SG115622A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/374,819 US6977801B2 (en) 2003-02-24 2003-02-24 Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer

Publications (1)

Publication Number Publication Date
SG115622A1 true SG115622A1 (en) 2005-10-28

Family

ID=32736490

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200400844A SG115622A1 (en) 2003-02-24 2004-02-24 Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer

Country Status (6)

Country Link
US (1) US6977801B2 (enExample)
EP (1) EP1450177B1 (enExample)
JP (1) JP2004260149A (enExample)
CN (1) CN100423313C (enExample)
DE (1) DE602004005905T2 (enExample)
SG (1) SG115622A1 (enExample)

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Also Published As

Publication number Publication date
CN1525582A (zh) 2004-09-01
DE602004005905D1 (de) 2007-05-31
EP1450177B1 (en) 2007-04-18
JP2004260149A (ja) 2004-09-16
DE602004005905T2 (de) 2008-01-17
US20040165320A1 (en) 2004-08-26
CN100423313C (zh) 2008-10-01
EP1450177A2 (en) 2004-08-25
US6977801B2 (en) 2005-12-20
EP1450177A3 (en) 2006-05-03

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