SG112066A1 - Complementary field-effect transistors and methods of manufacture - Google Patents

Complementary field-effect transistors and methods of manufacture

Info

Publication number
SG112066A1
SG112066A1 SG200406900A SG200406900A SG112066A1 SG 112066 A1 SG112066 A1 SG 112066A1 SG 200406900 A SG200406900 A SG 200406900A SG 200406900 A SG200406900 A SG 200406900A SG 112066 A1 SG112066 A1 SG 112066A1
Authority
SG
Singapore
Prior art keywords
manufacture
methods
effect transistors
complementary field
complementary
Prior art date
Application number
SG200406900A
Other languages
English (en)
Inventor
Huang Chien-Chao
Yang Fu-Liang
Ken Mickey
Hu Chenming
Ge Chung-Hu
Lee Wen-Chin
Ko Chih-Hsin
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG112066A1 publication Critical patent/SG112066A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7845—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being a conductive material, e.g. silicided S/D or Gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG200406900A 2003-12-01 2004-11-20 Complementary field-effect transistors and methods of manufacture SG112066A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52613303P 2003-12-01 2003-12-01
US10/896,270 US20050116360A1 (en) 2003-12-01 2004-07-21 Complementary field-effect transistors and methods of manufacture

Publications (1)

Publication Number Publication Date
SG112066A1 true SG112066A1 (en) 2005-06-29

Family

ID=36821062

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200406900A SG112066A1 (en) 2003-12-01 2004-11-20 Complementary field-effect transistors and methods of manufacture

Country Status (4)

Country Link
US (1) US20050116360A1 (zh)
CN (2) CN2793924Y (zh)
SG (1) SG112066A1 (zh)
TW (1) TWI285951B (zh)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3256084B2 (ja) 1994-05-26 2002-02-12 株式会社半導体エネルギー研究所 半導体集積回路およびその作製方法
KR100487656B1 (ko) * 2003-08-12 2005-05-03 삼성전자주식회사 반도체 기판과 ″ｌ″형 스페이서 사이에 에어 갭을구비하는 반도체 소자 및 그 제조 방법
JP4653949B2 (ja) 2003-12-10 2011-03-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US7361973B2 (en) * 2004-05-21 2008-04-22 International Business Machines Corporation Embedded stressed nitride liners for CMOS performance improvement
US7138323B2 (en) * 2004-07-28 2006-11-21 Intel Corporation Planarizing a semiconductor structure to form replacement metal gates
US7265425B2 (en) * 2004-11-15 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device employing an extension spacer and a method of forming the same
US20060267106A1 (en) * 2005-05-26 2006-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Novel semiconductor device with improved channel strain effect
JP5033316B2 (ja) * 2005-07-05 2012-09-26 日産自動車株式会社 半導体装置の製造方法
CN101218667B (zh) * 2005-07-07 2010-12-29 富士通半导体股份有限公司 半导体器件及其制造方法
US7670892B2 (en) * 2005-11-07 2010-03-02 Texas Instruments Incorporated Nitrogen based implants for defect reduction in strained silicon
JP5076119B2 (ja) * 2006-02-22 2012-11-21 富士通セミコンダクター株式会社 半導体装置及びその製造方法
CN100466207C (zh) * 2006-02-28 2009-03-04 联华电子股份有限公司 半导体晶体管元件及其制作方法
DE102006019835B4 (de) * 2006-04-28 2011-05-12 Advanced Micro Devices, Inc., Sunnyvale Transistor mit einem Kanal mit Zugverformung, der entlang einer kristallographischen Orientierung mit erhöhter Ladungsträgerbeweglichkeit orientiert ist
US7719089B2 (en) * 2006-05-05 2010-05-18 Sony Corporation MOSFET having a channel region with enhanced flexure-induced stress
US7781277B2 (en) * 2006-05-12 2010-08-24 Freescale Semiconductor, Inc. Selective uniaxial stress relaxation by layout optimization in strained silicon on insulator integrated circuit
US7504336B2 (en) * 2006-05-19 2009-03-17 International Business Machines Corporation Methods for forming CMOS devices with intrinsically stressed metal silicide layers
US7468313B2 (en) * 2006-05-30 2008-12-23 Freescale Semiconductor, Inc. Engineering strain in thick strained-SOI substrates
US7485524B2 (en) * 2006-06-21 2009-02-03 International Business Machines Corporation MOSFETs comprising source/drain regions with slanted upper surfaces, and method for fabricating the same
JP2008016475A (ja) * 2006-07-03 2008-01-24 Renesas Technology Corp 半導体装置
JP2008041899A (ja) * 2006-08-04 2008-02-21 Toshiba Corp 半導体装置
US7439120B2 (en) * 2006-08-11 2008-10-21 Advanced Micro Devices, Inc. Method for fabricating stress enhanced MOS circuits
US7416931B2 (en) * 2006-08-22 2008-08-26 Advanced Micro Devices, Inc. Methods for fabricating a stress enhanced MOS circuit
US7968148B2 (en) * 2006-09-15 2011-06-28 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with clean surfaces
US7442601B2 (en) * 2006-09-18 2008-10-28 Advanced Micro Devices, Inc. Stress enhanced CMOS circuits and methods for their fabrication
US7868361B2 (en) * 2007-06-21 2011-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with both I/O and core components and method of fabricating same
JP2009123960A (ja) * 2007-11-15 2009-06-04 Toshiba Corp 半導体装置
JP2009170523A (ja) * 2008-01-11 2009-07-30 Rohm Co Ltd 半導体装置およびその製造方法
JP5668277B2 (ja) * 2009-06-12 2015-02-12 ソニー株式会社 半導体装置
CN102881590B (zh) * 2011-07-12 2017-05-10 联华电子股份有限公司 修补层形成方法及金属氧化物半导体晶体管结构
US8527933B2 (en) 2011-09-20 2013-09-03 Freescale Semiconductor, Inc. Layout technique for stress management cells
KR102201606B1 (ko) * 2013-12-27 2021-01-12 인텔 코포레이션 Ｃｍｏｓ에 대한 2-축 인장 변형된 ｇｅ 채널
US9853148B2 (en) * 2016-02-02 2017-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Power MOSFETs and methods for manufacturing the same
US11462397B2 (en) * 2019-07-31 2022-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US20230019608A1 (en) * 2021-07-09 2023-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Seal ring for semiconductor device with gate-all-around transistors
CN116666421A (zh) * 2022-02-18 2023-08-29 联华电子股份有限公司 半导体元件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296401A (en) * 1990-01-11 1994-03-22 Mitsubishi Denki Kabushiki Kaisha MIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereof
US5461243A (en) * 1993-10-29 1995-10-24 International Business Machines Corporation Substrate for tensilely strained semiconductor
US5710450A (en) * 1994-12-23 1998-01-20 Intel Corporation Transistor with ultra shallow tip and method of fabrication
US6157213A (en) * 1998-10-19 2000-12-05 Xilinx, Inc. Layout architecture and method for fabricating PLDs including multiple discrete devices formed on a single chip
JP2001338988A (ja) * 2000-05-25 2001-12-07 Hitachi Ltd 半導体装置及びその製造方法
US6524935B1 (en) * 2000-09-29 2003-02-25 International Business Machines Corporation Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique
US6563152B2 (en) * 2000-12-29 2003-05-13 Intel Corporation Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel
JP2003179071A (ja) * 2001-10-25 2003-06-27 Sharp Corp Ｍｄｄおよび選択ｃｖｄシリサイドを用いて深いサブミクロンｃｍｏｓソース／ドレインを製造する方法
KR100476900B1 (ko) * 2002-05-22 2005-03-18 삼성전자주식회사 테스트 소자 그룹 회로를 포함하는 반도체 집적 회로 장치
AU2003247513A1 (en) * 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
JP4030383B2 (ja) * 2002-08-26 2008-01-09 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6864135B2 (en) * 2002-10-31 2005-03-08 Freescale Semiconductor, Inc. Semiconductor fabrication process using transistor spacers of differing widths
CN100437970C (zh) * 2003-03-07 2008-11-26 琥珀波系统公司 一种结构及用于形成半导体结构的方法
US7319258B2 (en) * 2003-10-31 2008-01-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator chip with<100>-oriented transistors

Also Published As

Publication number Publication date
CN2793924Y (zh) 2006-07-05
TW200529424A (en) 2005-09-01
TWI285951B (en) 2007-08-21
CN1645625A (zh) 2005-07-27
US20050116360A1 (en) 2005-06-02
CN100394614C (zh) 2008-06-11

Similar Documents

Publication Publication Date Title
SG112066A1 (en) Complementary field-effect transistors and methods of manufacture
SG115690A1 (en) Strained-channel transistor and methods of manufacture
SG120135A1 (en) Strained channel complementary field-effect transistors and methods of manufacture
GB2430805B (en) U-gate transistors and methods of fabrication
AU2003286806A8 (en) Novel field effect transistor and method of fabrication
EP1667646A4 (en) METHOD FOR USE OF AMMONIA-OXIDATING BACTERIA
HK1120160A1 (en) Trenched-gate field effect transistors and methods of forming the same
HK1094881A1 (en) Organic photosensitive devices and methods of making thereof
AU2003248770A8 (en) Integrated circuit including field effect transistor and method of manufacture
EP1745573A4 (en) PROCESS FOR PREPARING 2-DEOXY-BETA-L-NUCLEOSIDES
IL178996A0 (en) Thienopyridinone compounds and methods of treatment
IL182436A0 (en) Thienopyridinone compounds and methods of treatment
GB2404283B (en) Silicon-on-insulator transistor and method of manufacturing the same
AU2002315026A1 (en) Field-effect transistor and method of making the same
GB0107405D0 (en) Field effect transistor structure and method of manufacture
EP1678157A4 (en) Heterocyclic compounds and process for their preparation and use
EP1487024A4 (en) LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
EP1548843A4 (en) FIELD EFFECT TRANSISTOR
AU2003297348A8 (en) Method of fabricating organic field effect transistors
GB0324523D0 (en) Compositions and methods of treatment
GB0225205D0 (en) Thin film transistors and methods of manufacture thereof
GB2395602B (en) MOS transistor and method of manufacturing the same
GB0304555D0 (en) Compounds and methods of manufacture
GB0404749D0 (en) Trench field effect transistor and method of making it
TWI341546B (en) Semiconductor device and method of manufacture