SG11202113133RA - Photomask blank, method for producing photomask, and photomask - Google Patents

Photomask blank, method for producing photomask, and photomask

Info

Publication number
SG11202113133RA
SG11202113133RA SG11202113133RA SG11202113133RA SG11202113133RA SG 11202113133R A SG11202113133R A SG 11202113133RA SG 11202113133R A SG11202113133R A SG 11202113133RA SG 11202113133R A SG11202113133R A SG 11202113133RA SG 11202113133R A SG11202113133R A SG 11202113133RA
Authority
SG
Singapore
Prior art keywords
photomask
producing
blank
photomask blank
producing photomask
Prior art date
Application number
SG11202113133RA
Other languages
English (en)
Inventor
Naoki Matsuhashi
Kouhei Sasamoto
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG11202113133RA publication Critical patent/SG11202113133RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
SG11202113133RA 2019-05-31 2020-04-20 Photomask blank, method for producing photomask, and photomask SG11202113133RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019102162A JP7044095B2 (ja) 2019-05-31 2019-05-31 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
PCT/JP2020/017009 WO2020241116A1 (ja) 2019-05-31 2020-04-20 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク

Publications (1)

Publication Number Publication Date
SG11202113133RA true SG11202113133RA (en) 2021-12-30

Family

ID=73552332

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202113133RA SG11202113133RA (en) 2019-05-31 2020-04-20 Photomask blank, method for producing photomask, and photomask

Country Status (8)

Country Link
US (1) US11971653B2 (ja)
EP (1) EP3979001A4 (ja)
JP (1) JP7044095B2 (ja)
KR (1) KR102598715B1 (ja)
CN (1) CN113874784A (ja)
SG (1) SG11202113133RA (ja)
TW (1) TWI824153B (ja)
WO (1) WO2020241116A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023156717A (ja) * 2022-04-13 2023-10-25 信越化学工業株式会社 反射型フォトマスクブランク、反射型フォトマスクの製造方法、及び反射型フォトマスク

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182439A (ja) * 1984-02-29 1985-09-18 Konishiroku Photo Ind Co Ltd クロムマスク素材
JP2983020B1 (ja) 1998-12-18 1999-11-29 ホーヤ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP3956103B2 (ja) * 2002-02-26 2007-08-08 信越化学工業株式会社 フォトマスクブランク、フォトマスク及びフォトマスクブランクの評価方法
JP2002287330A (ja) * 2002-03-01 2002-10-03 Shin Etsu Chem Co Ltd フォトマスク用ブランクス及びフォトマスク
JP2004053663A (ja) * 2002-07-16 2004-02-19 Shin Etsu Chem Co Ltd フォトマスクブランク、フォトマスク及びフォトマスクブランクの選定方法
JPWO2009123166A1 (ja) * 2008-03-31 2011-07-28 Hoya株式会社 フォトマスクブランクおよびその製造方法
TWI446103B (zh) 2008-09-30 2014-07-21 Hoya Corp A mask substrate, a photomask and a method of manufacturing the same, and a method of manufacturing the semiconductor element
JP5464186B2 (ja) * 2011-09-07 2014-04-09 信越化学工業株式会社 フォトマスクブランク、フォトマスク及びその製造方法
JP6279858B2 (ja) * 2013-09-03 2018-02-14 Hoya株式会社 マスクブランクの製造方法および転写用マスクの製造方法
JP6292581B2 (ja) 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
US10018905B2 (en) * 2015-04-06 2018-07-10 S & S Tech Co., Ltd Phase shift blankmask and photomask
JP6341166B2 (ja) * 2015-09-03 2018-06-13 信越化学工業株式会社 フォトマスクブランク
JP6632950B2 (ja) * 2016-09-21 2020-01-22 Hoya株式会社 フォトマスクブランク、フォトマスクブランクの製造方法、及びそれらを用いたフォトマスクの製造方法、並びに表示装置の製造方法
JP6812236B2 (ja) * 2016-12-27 2021-01-13 Hoya株式会社 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP6819546B2 (ja) * 2017-11-13 2021-01-27 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法

Also Published As

Publication number Publication date
JP7044095B2 (ja) 2022-03-30
US20220229358A1 (en) 2022-07-21
CN113874784A (zh) 2021-12-31
US11971653B2 (en) 2024-04-30
TW202105045A (zh) 2021-02-01
EP3979001A1 (en) 2022-04-06
JP2020197566A (ja) 2020-12-10
TWI824153B (zh) 2023-12-01
KR102598715B1 (ko) 2023-11-07
EP3979001A4 (en) 2023-06-07
WO2020241116A1 (ja) 2020-12-03
KR20220013572A (ko) 2022-02-04

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