SG11202100176VA - Method for manufacturing semiconductor device, heat-curable resin composition, and dicing-die attach film - Google Patents
Method for manufacturing semiconductor device, heat-curable resin composition, and dicing-die attach filmInfo
- Publication number
- SG11202100176VA SG11202100176VA SG11202100176VA SG11202100176VA SG11202100176VA SG 11202100176V A SG11202100176V A SG 11202100176VA SG 11202100176V A SG11202100176V A SG 11202100176VA SG 11202100176V A SG11202100176V A SG 11202100176VA SG 11202100176V A SG11202100176V A SG 11202100176VA
- Authority
- SG
- Singapore
- Prior art keywords
- dicing
- heat
- semiconductor device
- resin composition
- curable resin
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000011342 resin composition Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
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- H01L2225/06506—Wire or wire-like electrical connections between devices
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- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
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- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
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- H—ELECTRICITY
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2018131431 | 2018-07-11 | ||
PCT/JP2019/027416 WO2020013250A1 (ja) | 2018-07-11 | 2019-07-10 | 半導体装置の製造方法、熱硬化性樹脂組成物及びダイシング・ダイボンディング一体型フィルム |
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SG11202100176VA SG11202100176VA (en) | 2018-07-11 | 2019-07-10 | Method for manufacturing semiconductor device, heat-curable resin composition, and dicing-die attach film |
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US (1) | US11634614B2 (ko) |
JP (2) | JP7298613B2 (ko) |
CN (1) | CN112385016A (ko) |
SG (1) | SG11202100176VA (ko) |
TW (2) | TWI827632B (ko) |
WO (1) | WO2020013250A1 (ko) |
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WO2022149277A1 (ja) | 2021-01-08 | 2022-07-14 | 昭和電工マテリアルズ株式会社 | 接着剤組成物、フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法 |
CN116685654A (zh) | 2021-01-08 | 2023-09-01 | 株式会社力森诺科 | 膜状黏合剂、切割晶粒接合一体型膜、以及半导体装置及其制造方法 |
JP2022115581A (ja) * | 2021-01-28 | 2022-08-09 | 昭和電工マテリアルズ株式会社 | 半導体装置及びその製造方法、並びに、熱硬化性樹脂組成物、接着フィルム及びダイシング・ダイボンディング一体型フィルム |
CN117321757B (zh) * | 2021-05-14 | 2024-09-17 | 住友电木株式会社 | 含银膏 |
WO2023047594A1 (ja) * | 2021-09-27 | 2023-03-30 | 昭和電工マテリアルズ株式会社 | フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法 |
WO2023079693A1 (ja) | 2021-11-05 | 2023-05-11 | 株式会社レゾナック | 補強された半導体チップの製造方法、フィルム付き半導体チップ、半導体チップの補強方法、補強用フィルム、及び半導体装置 |
WO2023152837A1 (ja) * | 2022-02-09 | 2023-08-17 | 株式会社レゾナック | フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法 |
JPWO2023157846A1 (ko) * | 2022-02-16 | 2023-08-24 | ||
WO2024204522A1 (ja) * | 2023-03-30 | 2024-10-03 | 東レ株式会社 | 離型シ-ト付き樹脂フィルム |
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DE3517753A1 (de) * | 1985-05-17 | 1986-11-20 | Dr. Beck & Co Ag, 2000 Hamburg | Hitzehaertbarer schmelzklebelack und seine verwendung |
CN100454493C (zh) * | 2003-06-06 | 2009-01-21 | 日立化成工业株式会社 | 粘合片、与切割胶带一体化粘合片以及半导体的制造方法 |
CN101714513B (zh) | 2004-04-20 | 2012-05-30 | 日立化成工业株式会社 | 半导体装置的制造方法 |
JP5390209B2 (ja) * | 2009-02-04 | 2014-01-15 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム |
JP5499772B2 (ja) * | 2009-02-26 | 2014-05-21 | 日立化成株式会社 | 半導体用接着部材、半導体用接着剤組成物、半導体用接着フィルム、積層体及び半導体装置の製造方法 |
JP5219302B2 (ja) * | 2010-02-04 | 2013-06-26 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム、ダイシング・ダイボンドフィルム、及び、半導体装置 |
JP5803123B2 (ja) * | 2011-02-08 | 2015-11-04 | 日立化成株式会社 | 半導体用粘接着シート、それを用いた半導体ウエハ、半導体装置及び半導体装置の製造方法 |
JP5732881B2 (ja) * | 2011-02-08 | 2015-06-10 | 日立化成株式会社 | 半導体用接着フィルム、接着シート、半導体ウエハ及び半導体装置 |
JP2013010849A (ja) * | 2011-06-29 | 2013-01-17 | Hitachi Chemical Co Ltd | 半導体用接着部材、それを用いたダイシング・ダイボンディング一体型接着部材及び半導体装置の製造方法 |
JP5976326B2 (ja) * | 2012-01-25 | 2016-08-23 | 日東電工株式会社 | 半導体装置の製造方法、及び、当該半導体装置の製造方法に用いられる接着フィルム |
JP5918664B2 (ja) * | 2012-09-10 | 2016-05-18 | 株式会社東芝 | 積層型半導体装置の製造方法 |
EP3190156B1 (en) * | 2014-09-01 | 2019-03-20 | Dow Corning Toray Co., Ltd. | Curable silicone composition, curable hot-melt silicone, and optical device |
JP2016190964A (ja) * | 2015-03-31 | 2016-11-10 | 日立化成株式会社 | 接着フィルム |
JP6621262B2 (ja) * | 2015-08-06 | 2019-12-18 | 藤森工業株式会社 | ホットメルト接着性樹脂フィルムおよびその製造方法 |
JP2017183705A (ja) * | 2016-03-24 | 2017-10-05 | 日東電工株式会社 | ダイシングダイボンドフィルム、及び、半導体装置の製造方法 |
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TWI827632B (zh) | 2024-01-01 |
JP2023123595A (ja) | 2023-09-05 |
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