SG11202012909QA - Sample rod growth and resistivity measurement during single crystal silicon ingot production - Google Patents
Sample rod growth and resistivity measurement during single crystal silicon ingot productionInfo
- Publication number
- SG11202012909QA SG11202012909QA SG11202012909QA SG11202012909QA SG11202012909QA SG 11202012909Q A SG11202012909Q A SG 11202012909QA SG 11202012909Q A SG11202012909Q A SG 11202012909QA SG 11202012909Q A SG11202012909Q A SG 11202012909QA SG 11202012909Q A SG11202012909Q A SG 11202012909QA
- Authority
- SG
- Singapore
- Prior art keywords
- single crystal
- crystal silicon
- silicon ingot
- measurement during
- during single
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/020,698 US10793969B2 (en) | 2018-06-27 | 2018-06-27 | Sample rod growth and resistivity measurement during single crystal silicon ingot production |
| PCT/US2019/038923 WO2020005901A1 (en) | 2018-06-27 | 2019-06-25 | Sample rod growth and resistivity measurement during single crystal silicon ingot production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202012909QA true SG11202012909QA (en) | 2021-01-28 |
Family
ID=67263097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202012909QA SG11202012909QA (en) | 2018-06-27 | 2019-06-25 | Sample rod growth and resistivity measurement during single crystal silicon ingot production |
Country Status (8)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10499357B1 (en) | 2018-08-09 | 2019-12-03 | Nec Corporation | Method and system for transmission of SUSI in the NAS procedure |
| WO2020131458A1 (en) * | 2018-12-21 | 2020-06-25 | Globalwafers Co., Ltd. | Sample rod center slab resistivity measurement during single crystal silicon ingot production |
| US11739437B2 (en) | 2018-12-27 | 2023-08-29 | Globalwafers Co., Ltd. | Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth |
| US12351938B2 (en) | 2022-02-10 | 2025-07-08 | Globalwafers Co., Ltd. | Methods for producing a product ingot having low oxygen content |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6395629A (ja) | 1986-10-13 | 1988-04-26 | Hitachi Ltd | 半導体単結晶インゴツトの加工指示装置 |
| JP2869300B2 (ja) * | 1992-08-07 | 1999-03-10 | 三菱マテリアル株式会社 | 半導体ウェーハの熱処理装置 |
| US5449883A (en) * | 1992-08-07 | 1995-09-12 | Mitsubishi Materials Corporation | Continuous heat treatment system of semiconductor wafers for eliminating thermal donor |
| JP3341378B2 (ja) * | 1993-08-25 | 2002-11-05 | 富士通株式会社 | シリコン結晶中の水素濃度測定方法及びシリコン結晶の製造方法 |
| JP4370499B2 (ja) | 2002-12-27 | 2009-11-25 | 信越半導体株式会社 | 文字読み取り方法及び装置並びに結晶検査方法 |
| US7635414B2 (en) | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
| US7521382B2 (en) | 2005-05-19 | 2009-04-21 | Memc Electronic Materials, Inc. | High resistivity silicon structure and a process for the preparation thereof |
| JP5767461B2 (ja) | 2010-12-14 | 2015-08-19 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体ウェーハの製造方法 |
| CN102181919B (zh) * | 2011-04-13 | 2012-12-26 | 天津市环欧半导体材料技术有限公司 | 一种控制直拉硅单晶头部电阻率的方法 |
| JP5817542B2 (ja) * | 2012-01-12 | 2015-11-18 | 信越半導体株式会社 | シリコン基板の製造方法 |
| CN103173867A (zh) * | 2013-04-16 | 2013-06-26 | 江西豪安能源科技有限公司 | 一种消除太阳能单晶头部热施主导致电阻失真的方法 |
| JP6168011B2 (ja) * | 2014-08-19 | 2017-07-26 | 信越半導体株式会社 | 単結晶育成装置及びその装置を用いた単結晶育成方法 |
| FR3045831B1 (fr) * | 2015-12-21 | 2018-01-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d'etalonnage d'un four de recuit utilise pour former des donneurs thermiques |
| US10920337B2 (en) | 2016-12-28 | 2021-02-16 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with improved resistivity control |
-
2018
- 2018-06-27 US US16/020,698 patent/US10793969B2/en active Active
-
2019
- 2019-06-25 EP EP19739815.9A patent/EP3814555B1/en active Active
- 2019-06-25 KR KR1020237043974A patent/KR20240005130A/ko not_active Ceased
- 2019-06-25 SG SG11202012909QA patent/SG11202012909QA/en unknown
- 2019-06-25 WO PCT/US2019/038923 patent/WO2020005901A1/en not_active Application Discontinuation
- 2019-06-25 JP JP2020571397A patent/JP7467362B2/ja active Active
- 2019-06-25 KR KR1020207038024A patent/KR20210044190A/ko not_active Ceased
- 2019-06-25 CN CN201980043704.8A patent/CN112469850A/zh active Pending
- 2019-06-25 EP EP23208255.2A patent/EP4317546A3/en active Pending
- 2019-06-26 TW TW111150725A patent/TWI800474B/zh active
- 2019-06-26 TW TW108122455A patent/TWI791859B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210044190A (ko) | 2021-04-22 |
| CN112469850A (zh) | 2021-03-09 |
| EP4317546A2 (en) | 2024-02-07 |
| EP4317546A3 (en) | 2024-03-20 |
| TWI791859B (zh) | 2023-02-11 |
| EP3814555A1 (en) | 2021-05-05 |
| TW202001011A (zh) | 2020-01-01 |
| WO2020005901A1 (en) | 2020-01-02 |
| TW202315989A (zh) | 2023-04-16 |
| US20200002836A1 (en) | 2020-01-02 |
| EP3814555B1 (en) | 2023-12-27 |
| JP7467362B2 (ja) | 2024-04-15 |
| JP2021529147A (ja) | 2021-10-28 |
| US10793969B2 (en) | 2020-10-06 |
| TWI800474B (zh) | 2023-04-21 |
| KR20240005130A (ko) | 2024-01-11 |
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