SG11202012612TA - Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots - Google Patents
Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingotsInfo
- Publication number
- SG11202012612TA SG11202012612TA SG11202012612TA SG11202012612TA SG11202012612TA SG 11202012612T A SG11202012612T A SG 11202012612TA SG 11202012612T A SG11202012612T A SG 11202012612TA SG 11202012612T A SG11202012612T A SG 11202012612TA SG 11202012612T A SG11202012612T A SG 11202012612TA
- Authority
- SG
- Singapore
- Prior art keywords
- growth
- single crystal
- crystal silicon
- during production
- silicon ingots
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/020,701 US11047066B2 (en) | 2018-06-27 | 2018-06-27 | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
| PCT/US2019/038928 WO2020005904A1 (en) | 2018-06-27 | 2019-06-25 | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202012612TA true SG11202012612TA (en) | 2021-01-28 |
Family
ID=67297288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202012612TA SG11202012612TA (en) | 2018-06-27 | 2019-06-25 | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11047066B2 (en) |
| EP (2) | EP4361324A3 (en) |
| JP (2) | JP7237996B2 (en) |
| KR (1) | KR102509479B1 (en) |
| CN (1) | CN112469851B (en) |
| SG (1) | SG11202012612TA (en) |
| TW (2) | TW202321531A (en) |
| WO (1) | WO2020005904A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10954606B2 (en) | 2018-06-27 | 2021-03-23 | Globalwafers Co., Ltd. | Methods for modeling the impurity concentration of a single crystal silicon ingot |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3551807A (en) * | 1968-10-01 | 1970-12-29 | Pennwalt Corp | Manually adjustable electrical probe for testing printed circuits and the like |
| US4134785A (en) * | 1977-04-13 | 1979-01-16 | Western Electric Company, Inc. | Real-time analysis and control of melt-chemistry in crystal growing operations |
| JPS6395629A (en) | 1986-10-13 | 1988-04-26 | Hitachi Ltd | Processing instruction device for semiconductor single crystal ingot |
| US5137699A (en) | 1990-12-17 | 1992-08-11 | General Electric Company | Apparatus and method employing interface heater segment for control of solidification interface shape in a crystal growth process |
| US5449883A (en) * | 1992-08-07 | 1995-09-12 | Mitsubishi Materials Corporation | Continuous heat treatment system of semiconductor wafers for eliminating thermal donor |
| JP2002226295A (en) | 2001-01-31 | 2002-08-14 | Shin Etsu Handotai Co Ltd | Control method for manufacturing process of silicon single crystal by czochralski method, manufacturing method for high resistance-silicon single crystal by czochralski method, and silicon single crystal |
| US6663709B2 (en) | 2001-06-26 | 2003-12-16 | Memc Electronic Materials, Inc. | Crystal puller and method for growing monocrystalline silicon ingots |
| US7282094B2 (en) | 2003-05-28 | 2007-10-16 | Sumco Corporation | Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal |
| US7635414B2 (en) | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
| KR20080017376A (en) * | 2005-05-19 | 2008-02-26 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | A high resistivity silicon structure and a process for the preparation thereof |
| KR101841032B1 (en) * | 2010-09-03 | 2018-03-22 | 지티에이티 아이피 홀딩 엘엘씨 | Silicon single crystal doped with gallium, indium, or aluminum |
| JP5767461B2 (en) | 2010-12-14 | 2015-08-19 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Manufacturing method of semiconductor wafer |
| CN102181919B (en) | 2011-04-13 | 2012-12-26 | 天津市环欧半导体材料技术有限公司 | Method for controlling resistivity of head of Czochralski silicon |
| FR2978549B1 (en) * | 2011-07-27 | 2014-03-28 | Commissariat Energie Atomique | DETERMINATION OF DOPING CONTENT IN A SILICON COMPENSATION SAMPLE |
| US20150333193A1 (en) * | 2012-12-31 | 2015-11-19 | Memc Electronic Matrials S.P.A. | Indium-doped silicon wafer and solar cell using the same |
| CN103173867A (en) * | 2013-04-16 | 2013-06-26 | 江西豪安能源科技有限公司 | Method for eliminating resistance distortion caused by heat donor at head part of solar single crystal |
| JP6168011B2 (en) | 2014-08-19 | 2017-07-26 | 信越半導体株式会社 | Single crystal growth apparatus and single crystal growth method using the apparatus |
| KR101665827B1 (en) * | 2014-12-30 | 2016-10-12 | 주식회사 엘지실트론 | Method for Growing Single Crystal enabling control Shape of Ingot Interface |
| WO2016179022A1 (en) * | 2015-05-01 | 2016-11-10 | Sunedison, Inc. | Methods for producing single crystal ingots doped with volatile dopants |
| CN105887194A (en) * | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | Growth method of type-n monocrystalline silicon |
| JP2018090466A (en) * | 2016-12-07 | 2018-06-14 | 信越半導体株式会社 | Production method of silicon single crystal |
| US10954606B2 (en) * | 2018-06-27 | 2021-03-23 | Globalwafers Co., Ltd. | Methods for modeling the impurity concentration of a single crystal silicon ingot |
-
2018
- 2018-06-27 US US16/020,701 patent/US11047066B2/en active Active
-
2019
- 2019-06-25 KR KR1020207037994A patent/KR102509479B1/en active IP Right Grant
- 2019-06-25 SG SG11202012612TA patent/SG11202012612TA/en unknown
- 2019-06-25 JP JP2020572644A patent/JP7237996B2/en active Active
- 2019-06-25 EP EP24155459.1A patent/EP4361324A3/en active Pending
- 2019-06-25 WO PCT/US2019/038928 patent/WO2020005904A1/en unknown
- 2019-06-25 CN CN201980043763.5A patent/CN112469851B/en active Active
- 2019-06-25 EP EP19740140.9A patent/EP3814557B1/en active Active
- 2019-06-26 TW TW112103366A patent/TW202321531A/en unknown
- 2019-06-26 TW TW108122456A patent/TWI794522B/en active
-
2023
- 2023-03-01 JP JP2023031098A patent/JP2023075200A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP3814557A1 (en) | 2021-05-05 |
| WO2020005904A1 (en) | 2020-01-02 |
| TWI794522B (en) | 2023-03-01 |
| CN112469851B (en) | 2022-12-02 |
| US11047066B2 (en) | 2021-06-29 |
| US20200002843A1 (en) | 2020-01-02 |
| KR20210041541A (en) | 2021-04-15 |
| JP7237996B2 (en) | 2023-03-13 |
| KR102509479B1 (en) | 2023-03-10 |
| TW202321531A (en) | 2023-06-01 |
| CN112469851A (en) | 2021-03-09 |
| JP2023075200A (en) | 2023-05-30 |
| EP3814557B1 (en) | 2024-03-13 |
| EP4361324A2 (en) | 2024-05-01 |
| TW202001012A (en) | 2020-01-01 |
| EP4361324A3 (en) | 2024-05-29 |
| JP2021528355A (en) | 2021-10-21 |
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