JP2002226295A - Control method for manufacturing process of silicon single crystal by czochralski method, manufacturing method for high resistance-silicon single crystal by czochralski method, and silicon single crystal - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a control method for guaranteeing a manufacturing process of a silicon single crystal, a method for manufacturing the high resistance silicon single crystal steadily, and surely provide the silicon single crystal. SOLUTION: The manufacturing process of a CZ silicon single crystal is controlled by a preliminary test wherein resistivity of the grown single crystal from a silicon melt is measured, followed by growing the silicon single crystal from the melt. The CZ silicon single crystal with high resistivity is manufactured by the following process: the silicon single crystal is grown from the silicon melt same as one used in the preliminary test in a case in which resistivity of the silicon crystal in the preliminary rest is higher than a prescribed value, while a dopant whose amount is equivalent to the above resistivity and whose conductive type is opposite to that of the silicon crystal is added to the melt in the case of the resistivity lower than the prescribed value. The silicon single crystal has the resistivity of >=100 Ωcm and to which an impurity whose amount is equivalent to the resistivity of <100 Ωcm and the dopant whose conductive type is opposite to that of the impurity and whose amount is equivalent to the resistivity of the impurity are added.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for controlling a silicon single crystal manufacturing process by the Czochralski method, a method for manufacturing a high-resistance silicon single crystal by the Czochralski method, and a silicon single crystal. The present invention relates to a method for managing a large-diameter silicon single crystal having a resistivity of 100 Ωcm or more, a method for manufacturing a silicon single crystal, and a silicon single crystal.

[0002]

2. Description of the Related Art In recent years, semiconductor devices for mobile communication and state-of-the-art C-MOS devices have required cost reduction and reduction of parasitic capacitance. Wafers (or substrates) have become necessary. In addition, it has been reported that the effect of using a high-resistivity substrate for signal transmission loss and reduction of parasitic capacitance in a Schottky barrier diode is reported. Further, in ultra-high-density devices, a high-resistance substrate is required because variations in the dopant concentration in the gate portion affect the withstand voltage of the device. Therefore, it is required to produce a wafer having a high resistivity (at least 100 Ωcm) by the Czochralski (CZ) method.

Further, specific semiconductor devices using a high-resistance substrate of 1000 Ωcm or more include, for example, a radiation detection device, a photodetection device, and a high-voltage semiconductor device. Such a high-resistance substrate is also required. ing.

Further, in order to further improve the performance of the semiconductor device, a so-called Silicon On Ins is used.
ulrator (SOI) wafer may be used. In order to solve the above-mentioned problems such as the increase in the diameter of the wafer and the signal transmission loss, it is also required to use a wafer having a high resistivity as the base wafer by the CZ method.

Recently, a large-diameter silicon substrate has been demanded for the purpose of improving the performance and reducing the cost of the semiconductor device as described above, and accordingly, growing a large-diameter silicon crystal. As a method for growing a silicon single crystal, an FZ method in which a polycrystalline silicon rod is zone-melted from the upper and lower parts to form a single crystal, or polycrystalline silicon is melted in a quartz crucible, and a seed crystal is added to the melt. Immersion and pulling single crystal while rotating CZ
Method, or a magnetic field is applied to the melt in this CZ method,
It is performed by a method of pulling up a silicon single crystal by controlling the convection of a silicon melt (hereinafter, abbreviated as MCZ method), and these methods have characteristics of the pulled-up silicon single crystal.

For example, in the FZ method, since a crucible is not used, a very high-resistance silicon wafer containing no oxygen can be obtained. However, the FZ method has a diameter of 15 mm.
Although crystals up to 0 mm can be produced, there is a problem that it is difficult to produce crystals having a diameter exceeding this. Therefore, there is a problem in terms of price, yield, and the like, which tends to hinder the development and spread of the above-described various semiconductor devices. Further, since the crystal obtained by the FZ method has a low oxygen content of 0.8 ppma (JEIDA; Japan Electronics Industry Development Association Standard) or less, the crystal is weak to the thermal stress applied to the crystal and crystal defects are likely to occur. . Therefore, when the above-described various semiconductor devices are formed using the silicon substrate cut out from the silicon substrate, there is a problem that the characteristics are deteriorated. These problems become more remarkable as the diameter of the grown crystal increases, and this also hinders the development and spread of the above-described semiconductor device using a high-resistance large-diameter silicon crystal.

On the other hand, in the Czochralski method, large-diameter silicon crystals can be grown, and since a crucible made of quartz is used, oxygen (interstitial oxygen) is mixed into the silicon crystals to a considerable extent. . According to the Czochralski method, since a large amount of oxygen can be taken into a silicon single crystal, an intrinsic gettering (IG) effect in a highly integrated circuit manufacturing process and resistance to crystal slip can be expected. However, the oxygen concentration in the grown crystal often reaches 17 ppma or more, and the concentration of the thermal donor generated by the high-concentration oxygen increases, and the oxygen is similarly mixed during the crystal growth due to elution from the crucible. Since there are many electrically active impurities such as boron (B), there is a problem that it is difficult to stably and reliably obtain a target high resistivity crystal.

For example, in a silicon crystal grown by the CZ method, oxygen atoms taken in during crystal growth are usually neutral, but when a low-temperature heat treatment at about 350 to 500 ° C. is performed, a plurality of atoms are removed. Gather and emit electrons to become an electrically active oxygen donor. For this reason, the wafer obtained by the CZ method is added to the wafer at 350 to
When heat treatment at about 500 ° C. is performed, there is a problem that the resistivity of the high-resistance CZ wafer is reduced due to the formation of the oxygen donor.

Japanese Patent Publication No. 8-10695 discloses a method of manufacturing a high-resistance wafer by the CZ method.
It describes that a silicon single crystal having a low interstitial oxygen concentration is produced by the (MCZ) method to produce a high-resistance silicon single crystal of 1000 Ωcm or more. Also, the publication discloses that a P-type silicon wafer having a low impurity concentration and a low oxygen concentration is applied to a P-type silicon wafer having a low impurity concentration by utilizing the phenomenon that an oxygen donor is formed.
There has also been proposed a method of producing a high-resistance N-type silicon wafer by performing a heat treatment at up to 500 ° C. to generate an oxygen donor, and using the oxygen donor to cancel P-type impurities in the P-type silicon wafer to make it N-type. Further, Japanese Unexamined Patent Application Publication No.
Japanese Patent No. 58788 discloses that a silicon single crystal of 10,000 Ω · cm or more is produced by performing an MCZ method using a synthetic quartz crucible.

However, when a silicon single crystal having a low interstitial oxygen concentration is manufactured as described above, there is a disadvantage that the density of internal defects generated by heat treatment in a device manufacturing process is low, and it is difficult to obtain a sufficient gettering effect. . In a highly integrated device, it is indispensable to provide a gettering effect by a certain amount of oxygen precipitation.

The MCZ method is described, for example, in JP-B-58-5095.
As disclosed in Japanese Patent Application Publication No. 1 (1993), etc., when a magnetic field is applied to a crystal growth raw material melt having conductivity, the apparent viscosity due to the magnetic fluid effect is increased, and the convection of the melt is reduced. In addition, a crystal having a large diameter can be grown, and the crystallinity can be improved. Not only can the oxygen concentration be sufficiently reduced, but also the oxygen concentration in the grown crystal can be increased as necessary, for example, by selecting the relative rotation speed of the pulled crystal and the raw material crucible. The concentration can be controlled and selected without fail over a wide range.

Here, focusing on the interstitial oxygen concentration, the low-concentration crystal having an oxygen concentration of 7 ppma or less in the crystal is MC
It is easily obtained by the Z method and does not turn into a donor. In the case of 17 ppma or more, it has been found that, for example, when subjected to multiple heat treatments during the device fabrication process, precipitation occurs up to the solid solubility of oxygen and residual interstitial oxygen decreases, so that donor formation is suppressed. On the other hand, in the case of 7 to 17 ppma, since oxygen precipitation does not sufficiently occur and the donor is easily formed, there is a problem that a silicon crystal having a high resistivity cannot be stably obtained in a general device manufacturing process. That is, when the oxygen concentration is too low, a problem occurs in crystallinity, and when the oxygen concentration is high to some extent, a problem arises that the generation of thermal donors hinders the increase in resistivity.

In addition, when a silicon single crystal is manufactured by the MCZ method, by using a raw material crystal, a crucible or the like having an extremely high purity, impurities such as boron or the like, which are mixed from the raw material or the crucible, to impart conductivity. Was mixed in without
Therefore, the resistivity of the silicon wafer should not be reduced.

[0014]

The CZ method (M
In order to obtain a crystal having a high resistivity by the CZ method (including the CZ method), it is considered that the problem can be solved by eliminating the influence of the thermal donor and preparing a high-purity quartz crucible and a high-purity crystal raw material. However, there is a problem that the resistivity failure often has a sudden unknown cause, and it cannot be guaranteed that a high-resistance silicon single crystal can be stably and reliably obtained.

The present invention can solve the above-mentioned problems, and provides a management method for guaranteeing a silicon single crystal manufacturing process, a method for stably manufacturing a high-resistance silicon single crystal, and a high-resistance silicon single crystal. A crystal is surely provided.

[0016]

SUMMARY OF THE INVENTION The present invention for solving the above problems is directed to a method for managing a silicon single crystal manufacturing process by the Czochralski method, wherein a silicon melt is prepared in advance in manufacturing a silicon single crystal. Growing a silicon single crystal from the silicon melt after measuring the resistivity of the silicon crystal by measuring the resistivity of the silicon crystal and determining whether the resistivity is within a predetermined standard. This is a method for managing a silicon single crystal manufacturing process by the Czochralski method (claim 1).

The present invention relates to a management method for guaranteeing a process for manufacturing a silicon single crystal which has solved the above-mentioned disadvantages. Particularly high resistivity (at least 10
0 Ωcm) in the process of producing a silicon single crystal,
Before pulling a silicon single crystal as a product, at a stage where the crystal raw material is melted in a quartz glass crucible, a silicon seed crystal is immersed and pulled in a silicon melt to grow the silicon crystal. The object of the present invention is to directly confirm the resistivity of the silicon melt by taking the crystal out of the furnace, cooling it, and measuring the resistivity. Therefore, the amount of impurities taken into the silicon melt can be grasped.

At this time, since the crystal to be pulled only needs to know the resistivity, it is not necessary to perform seed drawing for growing a dislocation-free crystal. In order to pull up a silicon single crystal as a product after the resistivity measurement, a silicon seed crystal is immersed in a silicon melt to form an aperture and then pulled up to grow the silicon single crystal. It is characterized in that the resistivity and conductivity type of the silicon single crystal grown in this way are directly controlled. Note that the management method of the present invention can be applied not only to the case of producing a silicon single crystal having a high resistivity but also to the case of producing a silicon single crystal having a low resistivity.

The present invention also relates to a method for producing a high-resistance silicon single crystal by the Czochralski method, wherein a silicon crystal is grown in advance from a silicon melt, and the resistivity of the silicon crystal is measured. When the resistivity is less than a predetermined value, a silicon single crystal is grown from the silicon melt as it is, and when the resistivity is less than a predetermined value, the conductivity type of the silicon crystal is measured and a dopant having a polarity opposite to the conductivity type is measured. Is added to the silicon melt in an amount corresponding to the resistivity, and then a silicon single crystal is grown, thereby producing a high-resistance silicon single crystal by the Czochralski method (claim 2).

In the manufacturing method of the present invention, a silicon crystal is grown in advance, and the resistivity of a silicon melt and the resistivity of a silicon single crystal grown as a product are directly measured in advance. At this time, in order to eliminate dislocations, it is necessary to form the narrowed portion after the seed crystal is brought into contact with the silicon melt, but since it takes time to form the narrowed portion for eliminating dislocations, Since the resistivity only needs to be known, it is not necessary to eliminate dislocations. For example, after the seed crystal is brought into contact with the silicon melt, a cone for measurement may be grown as it is.

Then, the resistivity is measured and, for example, 100
When a single crystal having a high resistance of Ωcm or more was produced, if the measured value of the crystal grown in advance was 100 Ωcm or more, the seed crystal was brought into contact with the silicon melt as it was to form a narrowed portion to remove dislocations of the crystal. Thereafter, a silicon single crystal is grown. If the resistivity of the crystal grown beforehand is less than 100 Ωcm, the conductivity type is also measured, and a dopant having a polarity opposite to the conductivity type is added to the silicon melt in an amount corresponding to the resistivity. That is, for example, when the measured conductivity type is N-type, boron (B) as a P-type dopant, or, for example, when the measured conductivity type is P-type, phosphorus (P) as an N-type dopant is added to the silicon melt. What is necessary is just to add. This cancels out the influence of the decrease in resistivity due to impurities, and a silicon single crystal with high resistivity can be obtained. The addition of a dopant having a polarity opposite to the conductivity type of such an impurity is called counter doping.

In this case, when a silicon crystal is grown from the silicon melt in advance and the resistivity of the silicon crystal is measured, the seed crystal is brought into contact with the silicon melt to start the growth of the silicon crystal and the cone portion is formed. It is preferable that when the diameter of the cone portion becomes 1 cm to 10 cm, the cone portion is separated from the silicon melt and cooled, and the resistivity of the growth interface of the cone portion is measured (claim 3).

Here, the cone portion is grown from a contact portion of the seed crystal to a predetermined diameter in order to bring the seed crystal into contact with the seed crystal in the process of growing the silicon crystal to obtain a silicon crystal having a predetermined diameter. Say part. The growth interface, which is the surface to be measured, refers to a separation surface in the cone portion when the cone portion is separated from the silicon melt.
By forming such a cone portion and using the growth interface as a resistivity measurement surface, the resistivity can be measured accurately and easily.

In this case, when the diameter of the cone portion is 1 cm or less, the resistivity may not be measured stably. On the other hand, when the diameter of the cone portion is 10 cm or more, oxygen dissolved in the silicon melt is easily taken into the cone portion, and the influence of a thermal donor on the cone portion appears. The rate may not be measured.
Further, further growth is useless in terms of time. Therefore, the diameter of the cone portion is preferably 1 cm to 10 cm. In this case, the cone part usually has a low oxygen concentration, so the effect of the oxygen donor is small.However, the cone part is taken out of the furnace in order to minimize the residence time in the region around 450 ° C where the oxygen donor is generated. After that, it is preferable to cool rapidly.

In this case, it is preferable to measure the resistivity by flattening the growth interface of the cone portion for measuring the resistivity with a grinder, a cutter or a lap.

In order to stably measure the resistivity as described above, it is preferable that the growth interface, which is the surface to be measured, be a flat surface by a grinder, a cutter, a wrap, or the like. This is because a stable measurement value may not be obtained if the measurement surface is inclined or has irregularities.

In this case, the silicon single crystal may have
It is preferable to measure the resistivity after performing a heat treatment at 00 ° C. or more (claim 5).

In order to eliminate the influence of the oxygen donor as described above (see paragraph 0012), 600
By performing the heat treatment at a temperature of not less than ° C for a short time (10 to 60 minutes), the oxygen donor can be surely erased. Such a heat treatment is called a donor killer heat treatment, and by adding this treatment, a silicon single crystal having more stable resistivity can be obtained. The donor killer heat treatment may be performed immediately after the rod-shaped single crystal is grown, after the final mirror wafer is manufactured, or during the processing of the wafer. You may.

In this case, the predetermined value of the resistivity is 100Ω.
cm or more (claim 6). The method of the present invention is particularly suitable for producing a silicon single crystal having a high resistivity of 100 Ωcm or more, which is susceptible to a resistivity variation due to an oxygen donor or an unintentionally mixed electrically active impurity. It is effective.

The present invention is also directed to a silicon single crystal having a resistivity of 100 Ωcm or more, wherein the silicon single crystal has an impurity amount of less than 100 Ωcm, and the impurity has a conductivity type opposite to the polarity and A silicon single crystal to which a dopant corresponding to the resistivity of the impurity is added.

If a high-resistance silicon single crystal cannot be obtained due to the influence of impurities, counter-doping is performed. Therefore, the impurities unintentionally mixed into the obtained silicon single crystal and the impurities are not conductive. The mold will contain an additive dopant of opposite polarity. Thus, a high-resistance silicon single crystal is obtained.

The silicon single crystal wafer obtained by slicing the silicon single crystal of the present invention (Claim 8) includes an impurity which is unintentionally mixed and an impurity whose conductivity type is opposite to that of the impurity. This is a silicon single crystal wafer containing a dopant, so that a high-resistance wafer can be reliably obtained. The high resistance wafer of the present invention can be used for a semiconductor device for mobile communication, a C-MOS device, a Schottky barrier diode, a radiation detection device, a photodetection device, a high breakdown voltage semiconductor device, and the like.

[0033]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail, but the present invention is not limited thereto. First, in order to produce a high-resistance silicon single crystal by the Czochralski method, a high-purity crystal raw material and a high-purity quartz crucible are prepared. And a high resistivity, for example 1
In order to control the manufacturing process of the silicon single crystal of 00Ωcm or more and to guarantee the resistivity of the high-resistance silicon single crystal,
A silicon crystal is grown in advance from the molten silicon melt. The seed crystal is brought into contact with the silicon melt, the silicon crystal is grown, and a cone is formed to expand the diameter to a predetermined diameter.
When the diameter of the cone becomes 1 to 10 cm, the silicon crystal is separated from the silicon melt, taken out of the furnace, and rapidly cooled. This is for shortening the staying time around 450 ° C. where the formation of a donor is likely to occur and reducing the influence of oxygen donors.

Next, the crystal growth interface of the cone portion is made a flat surface by a grinder, a cutter, a wrap, or the like to obtain a surface to be measured. This processing may be performed before the donor killer heat treatment is performed. Then, for example, the resistivity of the surface to be measured is measured by a four-probe method, and a predetermined value is temporarily set to 100.
If the measured value is 100 Ωcm or more,
A silicon single crystal is grown from the silicon melt as it is. Here, since the resistivity is measured in advance, it is possible to guarantee that a silicon single crystal having a standard resistivity is obtained.

On the other hand, if the resistivity is less than 100 Ωcm, the conductivity type is also measured, and a dopant having a polarity opposite to the conductivity type is added to the silicon melt in an amount corresponding to the resistivity to grow a silicon single crystal. Let it. Here, the resistivity is 1
An impurity that is unintentionally mixed in an amount of not more than 00 Ωcm will be included in the silicon crystal, and the impurity has a conductivity type opposite to that of the dopant and an amount of dopant corresponding to the resistivity due to the impurity. Will be added.
Here, after the counter doping, the cone portion of the silicon crystal is grown again, and as described above, the growth interface side, which is the measured surface of the cone portion, is made a flat surface, and the resistivity may be checked. . After adjusting the silicon melt in this way,
What is necessary is just to grow a silicon single crystal based on an ordinary method.

Here, the amount corresponding to the resistivity is A
STM (American Society for
Testing and Materials) St
described in F723-82 of the standard, and converted into a dopant concentration from the measured resistivity, the weight of the dopant to be added can be obtained by the following equation (AS
TM is used to determine the weight of the dopant necessary to obtain a crystal having a predetermined resistivity, but in the present invention, this is used in reverse, and is used to determine the weight of the dopant necessary to counteract it by compensating. . ). Dopant weight = Dopant concentration × Atom weight of dopant × Atomic mass unit × Weight of silicon raw material / Density of silicon Formula (1) The atomic mass unit is 1.66 × 10 ⁻²⁴ g, and the density of silicon is 2 0.33 g / cm ³ .

The silicon single crystal thus obtained is sliced, chamfered, wrapped, polished, etc. to obtain a silicon single crystal wafer, whereby a high resistance wafer required for a device can be obtained. The oxygen concentration in the silicon single crystal can be controlled by appropriately adjusting the convection generated by the temperature distribution, the rotation speed of the crucible, the pulling speed of the silicon crystal, the pressure and the flow rate of the inert gas in the chamber, and the like. Further, the diameter of the silicon crystal can be controlled by adjusting the temperature of the silicon melt and the pulling speed of the silicon crystal.

In this case, when the oxygen concentration is less than 7 ppma, the influence of the oxygen donor is small and there is almost no problem. Oxygen concentration at which the oxygen donor poses a problem is 7 to 17 ppm
a, when a silicon single crystal having the oxygen concentration is required, a heat treatment at 600 ° C. or higher is performed on the produced silicon single crystal or the silicon single crystal wafer for a short time (10 to 6).
0 min) to erase the donor. In addition, 17ppm
When the oxygen concentration exceeds a, the silicon single crystal or silicon single crystal wafer thus prepared is subjected to a heat treatment to precipitate oxygen to the solid solubility limit, so that the residual oxygen concentration is reduced to 7 ppma or less, so that donor formation can be suppressed.

As described above, when growing a silicon single crystal, the present inventors previously measured the resistivity of the silicon crystal and confirmed whether the silicon crystal passed or failed the specified resistivity.
In the case of rejection, the conductivity type of the silicon crystal is measured, and a dopant having the conductivity type of the opposite polarity is added to the silicon melt in an amount corresponding to the resistivity to grow the silicon single crystal. It was confirmed that the resistivity was guaranteed and the manufacturing process could be controlled.

[0040]

EXAMPLES The present invention will now be described specifically with reference to examples and comparative examples, but the present invention is not limited to these examples. Example 1 In order to produce a high-resistance silicon single crystal by the Czochralski method, a high-purity silicon polycrystal raw material 4 was prepared.
A high-purity quartz crucible having a weight of 0 kg and a diameter of 18 inches was prepared. In order to produce a high-resistance silicon single crystal having a resistivity value of 100 Ωcm or more, a silicon crystal was grown in advance from a molten silicon melt. The seed crystal was brought into contact with the silicon melt to grow the silicon crystal to form a cone portion. When the diameter of the cone portion became 5 cm, the silicon crystal was cut off from the silicon melt, taken out of the furnace, and rapidly cooled. .

The crystal growth interface of the cone portion having a diameter of 5 cm was flattened by wrapping to obtain a surface to be measured. Then, the resistivity of the surface to be measured was measured by a four probe method. The measured resistivity is 50 Ωcm and a predetermined value of 100 Ωcm
It became a value of less than.

When the conductivity type of the silicon crystal was measured, P
It was a mold. Therefore, phosphorus (P) was selected as a dopant having the opposite conductivity type. According to ASTM-F723-82, the dopant concentration of phosphorus corresponding to 50 Ωcm is 9.5 × 10 ¹³ / cm ³ . And since the weight of the silicon melt is (40 kg-cone part weight),
According to the formula (1), 8.38 × 10 ⁻⁵ g of phosphorus was added. Thereafter, a silicon single crystal having a diameter of 6 inches was grown, and the resistivity was measured. As a result, it was confirmed that the resistivity was 5000 Ωcm or more. The resistivity was also measured after the donor killer heat treatment at 650 ° C. for 30 minutes.
It was confirmed that it was stable at 0 Ωcm or more.

Example 2 As in Example 1, to produce a high-resistance silicon single crystal by the Czochralski method, 40 kg of high-purity silicon crystal raw material and a high-purity quartz crucible having a diameter of 18 inches were prepared. . The resistivity value is 1000
In order to produce a high-resistance silicon single crystal of Ωcm or more, a silicon crystal was grown in advance from a molten silicon melt.
As in the case of Example 1, a silicon crystal was grown to a diameter of 5 cm.
Was formed.

The crystal growth interface of the cone portion having a diameter of 5 cm was flattened by wrapping to obtain a surface to be measured. Then, the resistivity of the surface to be measured was measured by a four probe method. The measured resistivity is 800 Ωcm, and the predetermined value is 1000 Ω.
cm.

When the conductivity type of the silicon crystal was measured,
It was a mold. Therefore, boron (B) was selected as the dopant having the opposite conductivity type. The dopant concentration of phosphorus corresponding to 800 Ωcm is the above-mentioned ASTM-F723-82.
Thus, it is 1.6 × 10 ¹³ / cm ³ . Since the weight of the silicon melt is (40 kg-cone part weight), boron having a weight of 4.93 × 10 ⁻⁶ g was added according to the above formula (1). Thereafter, a silicon single crystal having a diameter of 6 inches was grown and the resistivity was measured.
This was confirmed. The resistivity was measured after the donor killer heat treatment at 650 ° C. for 30 minutes, and it was confirmed that the resistivity was stable at 5000 Ωcm or more.

The present invention is not limited to the above embodiment. The above embodiment is an exemplification, and has substantially the same configuration as the technical idea described in the scope of the claims of the present invention. It is included in the technical scope of the invention.

For example, in the above description, the case where a silicon single crystal is manufactured mainly by the CZ method has been described, but the present invention can be applied to, for example, the MCZ method. That is, in the MCZ method, it is needless to say that it is effective to guarantee the high-resistance silicon single crystal and control the manufacturing process, and the combination of the dopants is not limited to the above.

In the above embodiment, the resistivity is 1
Although the description has been given mainly of the process of manufacturing a silicon single crystal having a high resistivity of 00 Ωcm or more and the case of managing the same, the process of manufacturing a silicon single crystal by the Czochralski method of the present invention and the method of managing the silicon single crystal have a high resistivity. The present invention is useful not only for controlling a single crystal but also for controlling a manufacturing process of a silicon single crystal having a resistivity of less than 100 Ωcm. In particular,
When manufacturing an ultra-low resistance product with a resistance of 0.1 Ωcm or less, it is necessary to introduce a large amount of dopant, and a large amount of the silicon melt is scattered by evaporation, and the resistance is directly measured as in the present invention. Then the need to manufacture the product is high.

[0049]

As described above, according to the present invention, since the resistivity of the silicon crystal is measured in advance, the resistivity of the silicon single crystal is guaranteed, and the manufacturing process can be reliably managed. In addition, when the resistivity measured in advance is below the standard, counter-doping is used to cancel the influence of unintentionally mixed impurities to produce a high-resistance silicon single crystal having a resistivity within the standard. Can be.
In addition, since oxygen may be contained in silicon, it is possible to obtain a material having high crystal strength, excellent durability, a large diameter, and low cost. by this,
It is possible to reliably provide a high-resistance silicon single crystal wafer that can manufacture various devices having high sensitivity and stable characteristics with good yield and low cost.

Claims (8)

[Claims] 1. A method for managing a silicon single crystal manufacturing process by the Czochralski method, wherein, when manufacturing a silicon single crystal, a silicon crystal is grown in advance from a silicon melt and the resistivity of the silicon crystal is measured. And a step of growing a silicon single crystal from the silicon melt after determining whether or not the resistivity is within a predetermined standard. 2. A method for producing a high-resistance silicon single crystal by the Czochralski method, comprising: growing a silicon crystal from a silicon melt in advance and measuring the resistivity of the silicon crystal; In the case of, a silicon single crystal is grown from the silicon melt as it is, and when the resistivity is less than a predetermined value, the conductivity type of the silicon crystal is measured, and a dopant having the opposite polarity to the conductivity type is added to the resistance. A method for producing a high-resistance silicon single crystal by the Czochralski method, wherein a silicon single crystal is grown after adding an amount corresponding to the ratio to the silicon melt. 3. The method for producing a high-resistance silicon single crystal according to the Czochralski method according to claim 2, wherein a silicon crystal is grown from the silicon melt in advance and the resistivity of the silicon crystal is measured. Then, the seed crystal is brought into contact with the silicon melt to start the growth of the silicon crystal to form a cone portion. When the cone portion has a diameter of 1 cm to 10 cm, the cone portion is separated from the silicon melt and cooled. Measuring a resistivity of a growth interface of the cone portion by a Czochralski method. 4. The method for producing a high-resistance silicon single crystal according to the Czochralski method according to claim 3, wherein a growth interface of the cone part for measuring the resistivity is formed by a grinder,
A method for producing a high-resistance silicon single crystal by the Czochralski method, wherein the resistivity is measured by flattening with a cutter or a lap. 5. A method for producing a high-resistance silicon single crystal according to the Czochralski method according to claim 2, wherein the grown silicon single crystal is subjected to a heat treatment at 600 ° C. or higher. A method for producing a high-resistance silicon single crystal by a method. 6. A method for producing a high-resistance silicon single crystal by the Czochralski method according to claim 2, wherein the predetermined value of the resistivity is 100Ω.
cm or more, and a method for producing a high-resistance silicon single crystal by the Czochralski method. 7. A silicon single crystal having a resistivity of 100 Ωcm or more, wherein the silicon single crystal has a resistivity of 100 Ωc.
1. A silicon single crystal, characterized by being added with an impurity having an amount of less than m and a dopant having a conductivity type opposite to that of the impurity and a dopant amount corresponding to the resistivity of the impurity. 8. A silicon single crystal wafer obtained by slicing the silicon single crystal according to claim 7.