CN102181919B - Method for controlling resistivity of head of Czochralski silicon - Google Patents
Method for controlling resistivity of head of Czochralski silicon Download PDFInfo
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- CN102181919B CN102181919B CN 201110092541 CN201110092541A CN102181919B CN 102181919 B CN102181919 B CN 102181919B CN 201110092541 CN201110092541 CN 201110092541 CN 201110092541 A CN201110092541 A CN 201110092541A CN 102181919 B CN102181919 B CN 102181919B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 113
- 239000010703 silicon Substances 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 112
- 238000012360 testing method Methods 0.000 claims abstract description 56
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 46
- 239000000956 alloy Substances 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims description 49
- 238000005259 measurement Methods 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 22
- 239000000523 sample Substances 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 10
- 238000010899 nucleation Methods 0.000 description 19
- 239000002019 doping agent Substances 0.000 description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 229910052698 phosphorus Inorganic materials 0.000 description 16
- 239000011574 phosphorus Substances 0.000 description 16
- 238000002360 preparation method Methods 0.000 description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 12
- 239000007788 liquid Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 241001269238 Data Species 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000003698 anagen phase Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201110092541 CN102181919B (en) | 2011-04-13 | 2011-04-13 | Method for controlling resistivity of head of Czochralski silicon |
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CN 201110092541 CN102181919B (en) | 2011-04-13 | 2011-04-13 | Method for controlling resistivity of head of Czochralski silicon |
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CN102181919A CN102181919A (en) | 2011-09-14 |
CN102181919B true CN102181919B (en) | 2012-12-26 |
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CN 201110092541 Active CN102181919B (en) | 2011-04-13 | 2011-04-13 | Method for controlling resistivity of head of Czochralski silicon |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020131458A1 (en) * | 2018-12-21 | 2020-06-25 | Globalwafers Co., Ltd. | Sample rod center slab resistivity measurement during single crystal silicon ingot production |
EP4209625A1 (en) * | 2018-12-27 | 2023-07-12 | GlobalWafers Co., Ltd. | Improved resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105755533A (en) * | 2016-05-20 | 2016-07-13 | 麦斯克电子材料有限公司 | Method for preparing high-resistance silicon single crystal by Czochralski method |
CN106294302B (en) * | 2016-08-10 | 2018-10-09 | 宁夏高创特能源科技有限公司 | A kind of silicon target dispensing adjusts polarity, resistivity measuring method |
US10920337B2 (en) * | 2016-12-28 | 2021-02-16 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with improved resistivity control |
CN106757313A (en) * | 2016-12-29 | 2017-05-31 | 上海合晶硅材料有限公司 | It is overweight to mix arsenic crystal bar drawing method |
US10954606B2 (en) | 2018-06-27 | 2021-03-23 | Globalwafers Co., Ltd. | Methods for modeling the impurity concentration of a single crystal silicon ingot |
US10781532B2 (en) * | 2018-06-27 | 2020-09-22 | Globalwafers Co., Ltd. | Methods for determining the resistivity of a polycrystalline silicon melt |
US11047066B2 (en) * | 2018-06-27 | 2021-06-29 | Globalwafers Co., Ltd. | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
US10793969B2 (en) * | 2018-06-27 | 2020-10-06 | Globalwafers Co., Ltd. | Sample rod growth and resistivity measurement during single crystal silicon ingot production |
CN112680787B (en) * | 2021-03-17 | 2021-06-04 | 杭州晶宝新能源科技有限公司 | Growth method of monocrystalline silicon and monocrystalline silicon |
CN115558999A (en) * | 2022-10-09 | 2023-01-03 | 包头美科硅能源有限公司 | Method for improving resistivity hit degree of large-size N-type single crystal |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101654804A (en) * | 2009-09-24 | 2010-02-24 | 浙江大学 | Method for controlling specific resistance of gallium-doped Czochralski silicon in crystal growth process |
CN101906659A (en) * | 2010-08-18 | 2010-12-08 | 高佳太阳能股份有限公司 | Doping method of monocrystalline silicon for photovoltaics |
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2011
- 2011-04-13 CN CN 201110092541 patent/CN102181919B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101654804A (en) * | 2009-09-24 | 2010-02-24 | 浙江大学 | Method for controlling specific resistance of gallium-doped Czochralski silicon in crystal growth process |
CN101906659A (en) * | 2010-08-18 | 2010-12-08 | 高佳太阳能股份有限公司 | Doping method of monocrystalline silicon for photovoltaics |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020131458A1 (en) * | 2018-12-21 | 2020-06-25 | Globalwafers Co., Ltd. | Sample rod center slab resistivity measurement during single crystal silicon ingot production |
EP4209625A1 (en) * | 2018-12-27 | 2023-07-12 | GlobalWafers Co., Ltd. | Improved resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth |
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CN102181919A (en) | 2011-09-14 |
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Application publication date: 20110914 Assignee: Inner Mongolia Zhonghuan Photovoltaic Material Co., Ltd. Assignor: Huanou Semiconductor Material Technology Co., Ltd., Tianjin Contract record no.: 2014120000008 Denomination of invention: Method for controlling resistivity of head of Czochralski silicon Granted publication date: 20121226 License type: Exclusive License Record date: 20140210 |
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Effective date of registration: 20181225 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: Tianjin Zhonghuan Semiconductor Co., Ltd. Address before: 300384 Tianjin Nankai District Huayuan Industrial Park (outside the ring) 12 East Hai Tai Road Patentee before: Huanou Semiconductor Material Technology Co., Ltd., Tianjin |
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Effective date of registration: 20190523 Address after: 010000 No. 15 Baoli Street, Saihan District, Hohhot City, Inner Mongolia Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co., Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee before: Tianjin Zhonghuan Semiconductor Co., Ltd. |
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Effective date of registration: 20220419 Address after: 010000 No. 15 Baolier Street, Saihan District, Hohhot City, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. Patentee after: Central leading semiconductor materials Co., Ltd Address before: 010000 No. 15 Baoli Street, Saihan District, Hohhot City, Inner Mongolia Patentee before: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. |