CN115558999A - Method for improving resistivity hit degree of large-size N-type single crystal - Google Patents
Method for improving resistivity hit degree of large-size N-type single crystal Download PDFInfo
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- CN115558999A CN115558999A CN202211225168.3A CN202211225168A CN115558999A CN 115558999 A CN115558999 A CN 115558999A CN 202211225168 A CN202211225168 A CN 202211225168A CN 115558999 A CN115558999 A CN 115558999A
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- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 238000004364 calculation method Methods 0.000 claims abstract description 14
- 238000004088 simulation Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 6
- 230000001360 synchronised effect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000002498 deadly effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a method for improving the resistivity hit degree of a large-size N-type monocrystal, which comprises the steps of adjusting a doping simulation mode on the basis of the existing doping placement, establishing a resistance trend curve, pre-adjusting a resistance, and locking the hit accuracy of the resistance to a current root; if the leading-out frequency of the single crystal silicon is higher than the average leading-out frequency of the same production line by 1 time, doping is increased by 5% -8% on the original calculation level; if the effective equal diameter time of the monocrystalline silicon is 20-40% longer than that of the same-period production line, the doping is increased by 5-8% on the original calculation level. The invention has the advantages of improving the resistivity hit degree and the process matching of the client and is suitable for N-type or P-type crystal bars.
Description
Technical Field
The invention relates to the technical field of photovoltaic manufacturing, in particular to a method for improving the resistivity vital degree of a large-size N-type single crystal.
Background
In recent years, the photovoltaic single crystal industry develops rapidly, polycrystal is changed into single crystal, boron-doped single crystal is upgraded to phosphorus-doped single crystal, the silicon wafer efficiency is increased to 23% from 22%, N-type single crystal is different from military projection, and the photovoltaic technology is updated and iterated rapidly. Wherein, four important electrical performance parameters of the silicon single crystal, namely resistivity, minority carrier lifetime, oxygen content and carbon content, play a decisive role in the performance efficiency of the following photovoltaic process, silicon wafers and components.
The control of the resistivity is characterized in that the control has a hit rate concept, the industry is generally within a range of +/-0.05, then a period is determined, the ratio of the number of rods produced in the hit rate range to the total number of rods produced in the period is the hit rate, and the hit rate is basically 80% -85% in the current industry.
Doping into the crucible is influenced by factors such as temperature adjusting power, temperature adjusting time, leading and releasing times and the like, and finally the resistivity representation of the silicon rod is influenced. The longer the high temperature time is, the longer the temperature adjusting time is, the more the introduction and discharge times are, the larger the volatilization amount doped in the molten silicon is, the out-of-control resistance can occur, the resistance is increased, and the effective control of the lifetime degree is not facilitated.
Disclosure of Invention
The invention aims to solve the problem that the existing resistivity is easily affected by adverse effects and has low deadly intensity, and provides a method for improving the resistivity impact of a large-size N-type monocrystal, which can improve the resistivity impact and improve the process matching of a client.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for improving the resistivity hit degree of a large-size N-type single crystal comprises the following steps of adjusting a doping simulation mode on the basis of the existing doping placement:
(1) Locking the silicon single crystal: setting a resistance trend curve, wherein the abscissa of the curve chart is the leading and discharging times and the temperature adjusting time, and the ordinate is the resistance performance, so that the resistance is adjusted in advance, and the hit accuracy of the resistance is locked to the current one instead of the next one;
(2) Pre-reference of the number of times of introduction and discharge: if the leading and releasing times of the single crystal silicon are higher than the average leading and releasing times of a production line in the same period by 1 time, the doping is increased by 5% -8% on the original calculation level;
(3) Entering effective equal-diameter time pre-reference: if the effective equal diameter time of the monocrystalline silicon is 20-40% longer than that of the same-period production line, the doping is increased by 5-8% on the original calculation level.
Further, in the step (2), if the number of times of leading and placing the single crystal silicon is higher than the average number of times of leading and placing of the same production line, doping is increased by 10% -15% on the original calculation level.
Further, in the step (3), if the effective equal diameter time of the single crystal silicon is 50-80% longer than that of the same production line, the doping is increased by 15-18% on the original calculation level.
According to the technical scheme, the improved doping simulation mode is updated on the basis of the existing doping placement, the hit accuracy of the resistor is locked to the current monocrystalline silicon instead of the next monocrystalline silicon, the hit degree of the resistivity of the large-size monocrystalline silicon is improved, the hit degree is improved to 90% -93% from the industry level of 80% -83%, the method disclosed by the invention can be applied to N-type or P-type crystal bars, and the application range is wide.
Detailed Description
Example 1
In order to make the present invention more clear, the following description is further made in conjunction with a method for increasing the resistivity of a large-sized N-type single crystal of the present invention, and the specific examples described herein are only for illustrating the present invention and are not intended to limit the present invention.
A method for improving the resistivity vital degree of a large-size N-type single crystal comprises the following specific steps of adjusting a doping simulation mode on the basis of the existing doping placement, and is characterized in that:
(1) Locking as-root monocrystalline silicon: setting a resistance trend curve, wherein the abscissa of the curve chart is the leading and discharging times and the temperature adjusting time, and the ordinate is the resistance performance, so that the resistance is adjusted in advance, and the hit accuracy of the resistance is locked to the current one instead of the next one;
(2) Pre-reference of the number of times of introduction and discharge: if the leading and releasing times of the single crystal silicon are higher than the average leading and releasing times of the same production line for 1 time, the doping is increased by 5% -8% on the original calculation level, and if the leading and releasing times of the single crystal silicon are higher than the average leading and releasing times of the same production line for 2 times, the doping is increased by 10% -15% on the original calculation level;
(3) Entering effective equal-diameter time pre-reference: if the effective equal diameter time of the single crystal silicon is 20% -40% higher than that of the synchronous production line, the doping is increased by 5% -8% on the original calculation level, and if the effective equal diameter time of the single crystal silicon is 50% -80% higher than that of the synchronous production line, the doping is increased by 15% -18% on the original calculation level.
According to the method, the hit accuracy of the resistor is locked to the current single crystal silicon rod, and the increment of doping is adjusted in time according to the comparison between the number of times of leading and discharging and the temperature adjusting time and the same production line, so that the aim of pre-adjusting the resistor is fulfilled, and the hit degree is improved to 90% -93%.
In addition to the above embodiments, the present invention may have other embodiments. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope of the present invention.
Claims (3)
1. A method for improving the resistivity vital value of a large-size N-type monocrystal comprises the following steps of adjusting a doping simulation mode on the basis of the existing doping placement, and is characterized in that:
(1) Locking the silicon single crystal: setting a resistance trend curve, wherein the abscissa of the curve chart is the leading and discharging times and the temperature adjusting time, and the ordinate is the resistance performance, so that the resistance is adjusted in advance, and the hitting accuracy of the resistance is locked to the current value;
(2) Pre-reference of the number of times of introduction and discharge: if the leading and releasing times of the single crystal silicon are higher than the average leading and releasing times of a production line in the same period by 1 time, the doping is increased by 5% -8% on the original calculation level;
(3) Entering effective equal path time pre-reference: if the effective equal diameter time of the single crystal silicon is 20-40% higher than that of the same production line, the doping is increased by 5-8% on the original calculation level.
2. The method of increasing resistivity hit level of large size N-type single crystal as claimed in claim 1, wherein:
in the step (2), if the leading and discharging times of the single crystal silicon are higher than the average leading and discharging times of the same production line for 2 times, the doping is increased by 10% -15% on the original calculation level.
3. The method for increasing resistivity hit level of large size N-type single crystal according to claim 1 or 2, wherein:
in the step (3), if the effective diameter waiting time of the single crystal silicon is 50-80% longer than that of the same production line, the doping is increased by 15-18% on the original calculation level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211225168.3A CN115558999A (en) | 2022-10-09 | 2022-10-09 | Method for improving resistivity hit degree of large-size N-type single crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211225168.3A CN115558999A (en) | 2022-10-09 | 2022-10-09 | Method for improving resistivity hit degree of large-size N-type single crystal |
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| CN115558999A true CN115558999A (en) | 2023-01-03 |
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| CN202211225168.3A Pending CN115558999A (en) | 2022-10-09 | 2022-10-09 | Method for improving resistivity hit degree of large-size N-type single crystal |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102181919A (en) * | 2011-04-13 | 2011-09-14 | 天津市环欧半导体材料技术有限公司 | Method for controlling resistivity of head of Czochralski silicon |
| CN108277524A (en) * | 2017-01-06 | 2018-07-13 | 银川隆基硅材料有限公司 | A kind of doping method of improvement n type single crystal silicon stick characteristic |
| CN111270300A (en) * | 2018-12-04 | 2020-06-12 | 有研半导体材料有限公司 | Preparation method of gas-phase doped zone-melting silicon single crystal |
| CN114059152A (en) * | 2021-11-19 | 2022-02-18 | 包头美科硅能源有限公司 | Gallium element doping method for producing silicon single crystal rod by Czochralski method |
| CN115058774A (en) * | 2022-07-21 | 2022-09-16 | 天合光能股份有限公司 | Method for preparing czochralski silicon |
-
2022
- 2022-10-09 CN CN202211225168.3A patent/CN115558999A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102181919A (en) * | 2011-04-13 | 2011-09-14 | 天津市环欧半导体材料技术有限公司 | Method for controlling resistivity of head of Czochralski silicon |
| CN108277524A (en) * | 2017-01-06 | 2018-07-13 | 银川隆基硅材料有限公司 | A kind of doping method of improvement n type single crystal silicon stick characteristic |
| CN111270300A (en) * | 2018-12-04 | 2020-06-12 | 有研半导体材料有限公司 | Preparation method of gas-phase doped zone-melting silicon single crystal |
| CN114059152A (en) * | 2021-11-19 | 2022-02-18 | 包头美科硅能源有限公司 | Gallium element doping method for producing silicon single crystal rod by Czochralski method |
| CN115058774A (en) * | 2022-07-21 | 2022-09-16 | 天合光能股份有限公司 | Method for preparing czochralski silicon |
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