CN108277524A - A kind of doping method of improvement n type single crystal silicon stick characteristic - Google Patents
A kind of doping method of improvement n type single crystal silicon stick characteristic Download PDFInfo
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- CN108277524A CN108277524A CN201710009114.6A CN201710009114A CN108277524A CN 108277524 A CN108277524 A CN 108277524A CN 201710009114 A CN201710009114 A CN 201710009114A CN 108277524 A CN108277524 A CN 108277524A
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- single crystal
- silicon
- type single
- raw material
- improvement
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
A kind of doping method of improvement n type single crystal silicon stick characteristic disclosed by the invention, including step：Fine aluminium particle is first added in silicon raw material by a certain percentage; then silicon raw material and fine aluminium particle are fitted into the silica crucible in single crystal growing furnace; after single crystal growing furnace sealing is passed through protective gas; by heater by silicon raw material and fine aluminium particles fuse; finally by seeding, shouldering, turn shoulder, isometrical, ending, after blowing out process, obtain n type single crystal silicon stick.A kind of doping method of improvement n type single crystal silicon characteristic of the present invention solves the problems, such as that existing silicon single crystal rod leads to its tail portion resistance bad rate is higher since distribution of resistance is unreasonable in growth course.A kind of doping method of improvement n type single crystal silicon characteristic of the present invention adds fine aluminium particle in silicon raw material, high temperature melting is simultaneously distributed in silicon solution, it is distributed in silicon single crystal rod according to fractional condensation principle with the growth of silicon single crystal rod, to achieve the purpose that improve the resistivity distribution of n type single crystal silicon stick tail portion and defect is inhibited to generate.
Description
Technical field
The invention belongs to monocrystalline silicon growing technical fields, and in particular to a kind of doping side of improvement n type single crystal silicon stick characteristic
Method.
Background technology
N type single crystal silicon stick, end to end the ratio between resistivity theoretically 6 times i.e. can guarantee tail portion resistance without departing from lower range, but
In actual production, because the hit rate of head resistivity is difficult to reach 100%, so as to cause the bad of tail portion resistivity, at present
With the product list of target resistivity/lower limit resistivity=6, tail portion resistance fraction defective is about 3%, this just need from source
Technique is improved during monocrystalline silicon growing.
Invention content
The purpose of the present invention is to provide a kind of doping methods of improvement n type single crystal silicon stick characteristic, solve existing list
The problem of crystalline silicon rod leads to its tail portion resistance bad rate is higher since distribution of resistance is unreasonable in growth course.
The technical solution adopted in the present invention is：A kind of doping method of improvement n type single crystal silicon stick characteristic, including walk as follows
Suddenly：Fine aluminium particle is first added in silicon raw material by a certain percentage, the stone then silicon raw material and fine aluminium particle being packed into single crystal growing furnace
In English crucible, after single crystal growing furnace sealing is passed through protective gas, by heater by silicon raw material and fine aluminium particles fuse, finally pass through
Seeding, shouldering turn shoulder, are isometrical, after ending, blowing out process, obtain n type single crystal silicon stick.
The features of the present invention also characterized in that
Fine aluminium particle and silicon raw material are added to according to the ratio of 0.01-0.05g/100kg in silicon raw material.
The beneficial effects of the invention are as follows：A kind of doping method of improvement n type single crystal silicon characteristic of the present invention solves existing
Silicon single crystal rod the problem of leading to its tail portion resistance since distribution of resistance is unreasonable in growth course bad rate is higher.The present invention
The doping method of improvement n type single crystal silicon characteristic a kind of a certain proportion of fine aluminium particle is added in silicon raw material, high temperature melting is simultaneously
It is distributed in silicon solution, fractional condensation principle distribution is pressed in silicon single crystal rod according to fractional condensation principle with the growth of silicon single crystal rod, to reach
To the purpose for improving the resistivity distribution of n type single crystal silicon stick tail portion and defect being inhibited to generate.
Description of the drawings
Fig. 1 be it is using the present invention it is a kind of improvement n type single crystal silicon stick characteristic doping method production silicon single crystal rod with often
The profiles versus of the resistivity end to end figure of the silicon single crystal rod of rule method production.
Specific implementation mode
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
A kind of doping method of improvement n type single crystal silicon stick characteristic provided by the invention, includes the following steps：First press certain ratio
Example adds fine aluminium particle in silicon raw material, and then silicon raw material and fine aluminium particle are fitted into the silica crucible in single crystal growing furnace, will be single
After brilliant stove sealing is passed through protective gas, by heater by silicon raw material and fine aluminium particles fuse, finally passes through seeding, shouldering, turns
After shoulder, isometrical, ending, blowing out process, n type single crystal silicon stick is obtained.
Preferably, fine aluminium particle and silicon raw material are added to according to the ratio of 0.01-0.05g/100kg in silicon raw material.Example
Property, it can be added in the ratio that 0.01g, 0.03g or 0.05g fine aluminium particle are added in every 100kg silicon raw materials.
The reason of n type single crystal silicon stick tail portion resistivity is greatly reduced is that the segregation coefficient of doping agent phosphorus element is smaller, is caused
In the growth course of silicon single crystal rod tail portion, the surplus material phosphorus concentration in quartz crucible is higher.The present invention mixes micro in melted silicon
Aluminium, aluminium element are distributed according to fractional condensation principle in silicon single crystal rod with the growth of silicon single crystal rod, can prevent phosphorus first to a certain extent
Element enters silicon single crystal body in crystal growing process, is distributed so as to improve resistivity, so that tail portion resistivity is raised, avoid tail portion
Resistivity is bad；Aluminium atom can fill up the microcosmic point defect in silicon crystalline structure simultaneously, inhibit the generation of defect.
A kind of doping method of improvement n type single crystal silicon stick characteristic of the present invention is on the basis for not influencing other qualities of silicon crystal
On, resistivity evenness is improved, and inhibit the generation of microcosmic point defect so that n type single crystal silicon stick tail portion resistivity is bad
Be obviously improved, it is using the present invention it is a kind of improvement n type single crystal silicon stick characteristic doping method production silicon single crystal rod with
The profiles versus of the resistivity end to end figure of the silicon single crystal rod of conventional method production is as shown in Figure 1, it can be seen that after being doped with aluminium element
The tail portion resistivity of silicon single crystal rod is obviously improved, experiments have shown that：A kind of improvement n type single crystal silicon stick characteristic using the present invention is mixed
The silicon single crystal rod of miscellaneous method production, recycling ratio is reduced to 2% from 3% before caused by resistivity is bad, and mixes
To crystal quality without other influences after miscellaneous.
Claims (2)
1. a kind of doping method of improvement n type single crystal silicon stick characteristic, which is characterized in that include the following steps：By a certain percentage first
Fine aluminium particle is added in silicon raw material, then silicon raw material and fine aluminium particle is fitted into the silica crucible in single crystal growing furnace, by monocrystalline
Stove sealing be passed through protective gas after, by heater by silicon raw material and fine aluminium particles fuse, finally pass through seeding, shouldering, turn shoulder,
After isometrical, ending, blowing out process, n type single crystal silicon stick is obtained.
2. a kind of doping method of improvement n type single crystal silicon stick characteristic as described in claim 1, which is characterized in that the fine aluminium
Particle and silicon raw material are added to according to the ratio of 0.01-0.05g/100kg in silicon raw material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710009114.6A CN108277524A (en) | 2017-01-06 | 2017-01-06 | A kind of doping method of improvement n type single crystal silicon stick characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710009114.6A CN108277524A (en) | 2017-01-06 | 2017-01-06 | A kind of doping method of improvement n type single crystal silicon stick characteristic |
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| Publication Number | Publication Date |
|---|---|
| CN108277524A true CN108277524A (en) | 2018-07-13 |
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| CN201710009114.6A Pending CN108277524A (en) | 2017-01-06 | 2017-01-06 | A kind of doping method of improvement n type single crystal silicon stick characteristic |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115558999A (en) * | 2022-10-09 | 2023-01-03 | 包头美科硅能源有限公司 | Method for improving resistivity hit degree of large-size N-type single crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012089392A1 (en) * | 2010-12-28 | 2012-07-05 | Siltronic Ag | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
| CN103046130A (en) * | 2011-10-17 | 2013-04-17 | 硅电子股份公司 | P-type silicon single crystal and method of manufacturing the same |
| CN105970284A (en) * | 2016-05-30 | 2016-09-28 | 上海超硅半导体有限公司 | P type monocrystalline silicon piece and manufacturing method thereof |
-
2017
- 2017-01-06 CN CN201710009114.6A patent/CN108277524A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012089392A1 (en) * | 2010-12-28 | 2012-07-05 | Siltronic Ag | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
| CN103046130A (en) * | 2011-10-17 | 2013-04-17 | 硅电子股份公司 | P-type silicon single crystal and method of manufacturing the same |
| CN105970284A (en) * | 2016-05-30 | 2016-09-28 | 上海超硅半导体有限公司 | P type monocrystalline silicon piece and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115558999A (en) * | 2022-10-09 | 2023-01-03 | 包头美科硅能源有限公司 | Method for improving resistivity hit degree of large-size N-type single crystal |
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Application publication date: 20180713 |
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